Toshiba RN2101F, RN2102F, RN2103F, RN2104F, RN2105F Schematic [ru]

RN2101F~RN2106F

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2101F,RN2102F,RN2103F

RN2104F,RN2105F,RN2106F

Switching, Inverter Circuit, Interface Circuit

Unit: mm

And Driver Circuit Applications

l With built-in bias resistors

l

Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l

Complementary to RN1101F~RN1106F

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2101F

4.7

4.7

RN2102F

10

10

RN2103F

22

22

RN2104F

47

47

RN2105F

2.2

47

RN2106F

4.7

47

JEDEC

―

EIAJ

―

TOSHIBA

2-2HA1A

Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

RN2101F~2106F

VCBO

−50

V

Collector-emitter voltage

VCEO

−50

V

Emitter-base voltage

RN2101F~2104F

VEBO

−10

V

RN2105F, 2106F

−5

Collector current

IC

−100

mA

Collector power dissipation

RN2101F~2106F

PC

100

mW

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55~150

°C

1	2001-06-07

RN2101F~RN2106F

Electrical Characteristics (Ta = 25°C)

Characteristic			Symbol	Test	Test Condition	Min	Typ.	Max	Unit
				Circuit
Collector cut-off		RN2101F	ICBO	―	VCB = −50V, IE = 0	―	―	−100	nA
current		~2106F	ICEO		VCE = −50V, IB = 0	―	―	−500
		RN2101F				−0.82	―	−1.52
		RN2102F			VEB = −10V, IC = 0	−0.38	―	−0.71
Emitter cut-off current		RN2103F	IEBO	―		−0.17	―	−0.33	mA
		RN2104F				−0.082	―	−0.15
		RN2105F			VEB = −5V, IC = 0	−0.078	―	−0.145
		RN2106F				−0.074	―	−0.138
		RN2101F				30	―	―
		RN2102F				50	―	―
DC current gain		RN2103F	hFE	―	VCE = −5V,	70	―	―
		RN2104F			IC = −10mA	80	―	―
		RN2105F				80	―	―
		RN2106F				80	―	―
Collector-emitter		RN2101F	VCE (sat)	―	IC = −5mA,	―	−0.1	−0.3	V
saturation voltage		~2106F			IB = −0.25mA
		RN2101F				−1.1	―	−2.0
		RN2102F				−1.2	―	−2.4
Input voltage (ON)		RN2103F	VI (ON)	―	VCE = −0.2V,	−1.3	―	−3.0	V
		RN2104F				−1.5	―	−5.0
					IC = −5mA
		RN2105F				−0.6	―	−1.1
		RN2106F				−0.7	―	−1.3
		RN2101F				−1.0	―	−1.5
		~2104F			VCE = −5V,
Input voltage (OFF)			VI (OFF)	―					V
	RN2105F,
					IC = −0.1mA	−0.5	―	−0.8
		2106F
Transition frequency		RN2101F	fT	―	VCE = −10V,	―	200	―	MHz
		~2106F			IC = −5mA
Collector Output		RN2101F	Cob	―	VCB = −10V, IE = 0,	―	3	6	pF
capacitance		~2106F			f = 1MHz
		RN2101F				3.29	4.7	6.11
		RN2102F				7	10	13
Input resistor		RN2103F	R1	―		15.4	22	28.6	kΩ
		RN2104F				32.9	47	61.1
		RN2105F				1.54	2.2	2.86
		RN2106F				3.29	4.7	6.11
		RN2101F				0.9	1.0	1.1
		~2104F
Resistor ratio			R1/R2	―
		RN2105F				0.0421	0.0468	0.0515
		RN2106F				0.09	0.1	0.11

2	2001-06-07

RN2101F~RN2106F

3	2001-06-07