TOSHIBA RN2101, RN2106 Technical data

RN2101~RN2106

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2101,RN2102,RN2103

RN2104,RN2105,RN2106

Switching, Inverter Circuit, Interface Circuit

Unit: mm

And Driver Circuit Applications

l With built-in bias resistors

l

Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l

Complementary to RN1101~RN1106

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2101

4.7

4.7

RN2102

10

10

RN2103

22

22

RN2104

47

47

RN2105

2.2

47

RN2106

4.7

47

JEDEC

―

EIAJ

―

TOSHIBA

2-2H1A

Maximum Ratings (Ta = 25°C)

Weight: 2.4mg

Characteristic

Symbol

Rating

Unit

Collector-base voltage

RN2101~2106

VCBO

−50

V

Collector-emitter voltage

VCEO

−50

V

Emitter-base voltage

RN2101~2104

VEBO

−10

V

RN2105, 2106

−5

Collector current

IC

−100

mA

Collector power dissipation

RN2101~2106

PC

100

mW

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55~150

°C

1	2001-06-07

RN2101~RN2106

Electrical Characteristics (Ta = 25°C)

	Characteristic		Symbol	Test	Test Condition	Min	Typ.	Max	Unit
				Circuit
	Collector cut-off	RN2101~2106	ICBO	―	VCB = −50V, IE = 0	―	―	−100	nA
	current		ICEO		VCE = −50V, IB = 0	―	―	−500
		RN2101				−0.82	―	−1.52
		RN2102			VEB = −10V, IC = 0	−0.38	―	−0.71
	Emitter cut-off current	RN2103	IEBO	―		−0.17	―	−0.33	mA
		RN2104				−0.082	―	−0.15
		RN2105			VEB = −5V, IC = 0	−0.078	―	−0.145
		RN2106				−0.074	―	−0.138
		RN2101				30	―	―
		RN2102				50	―	―
	DC current gain	RN2103	hFE	―	VCE = −5V,	70	―	―
		RN2104			IC = −10mA	80	―	―
		RN2105				80	―	―
		RN2106				80	―	―
	Collector-emitter	RN2101~2106	VCE (sat)	―	IC = −5mA,	―	−0.1	−0.3	V
	saturation voltage				IB = −0.25mA
		RN2101				−1.1	―	−2.0
		RN2102				−1.2	―	−2.4
	Input voltage (ON)	RN2103	VI (ON)	―	VCE = −0.2V,	−1.3	―	−3.0	V
		RN2104				−1.5	―	−5.0
					IC = −5mA
		RN2105				−0.6	―	−1.1
		RN2106				−0.7	―	−1.3
	Input voltage (OFF)	RN2101~2104	VI (OFF)	―	VCE = −5V,	−1.0	―	−1.5	V
		RN2105, 2106				−0.5	―	−0.8
					IC = −0.1mA
	Transition frequency	RN2101~2106	fT	―	VCE = −10V,	―	200	―	MHz
					IC = −5mA
	Collector Output	RN2101~2106	Cob	―	VCB = −10V, IE = 0,	―	3	6	pF
	capacitance				f = 1MHz
		RN2101				3.29	4.7	6.11
		RN2102				7	10	13
	Input resistor	RN2103	R1	―		15.4	22	28.6	kΩ
		RN2104				32.9	47	61.1
		RN2105				1.54	2.2	2.86
		RN2106				3.29	4.7	6.11
		RN2101~2104				0.9	1.0	1.1
	Resistor ratio		R1/R2	―
		RN2105				0.0421	0.0468	0.0515
		RN2106				0.09	0.1	0.11

2	2001-06-07

RN2101~RN2106

3	2001-06-07