TOSHIBA RN2001, RN2002, RN2003, RN2004, RN2005 User Manual

RN2001~RN2006

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2001,RN2002,RN2003

RN2004,RN2005,RN2006

Switching, Inverter Circuit, Interface Circuit

Unit: mm

And Driver Circuit Applications

l With built-in bias resistors

l

Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l

Complementary to RN1001~RN1006

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2001

4.7

4.7

RN2002

10

10

RN2003

22

22

RN2004

47

47

RN2005

2.2

47

RN2006

4.7

47

JEDEC

TO-92

EIAJ

SC-43

TOSHIBA

2-5F1B

Weight: 0.21g

Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

RN2001~2006

VCBO

−50

V

Collector-emitter voltage

VCEO

−50

V

Emitter-base voltage

RN2001~2004

VEBO

−10

V

RN2005, 2006

−5

Collector current

IC

−100

mA

Collector power dissipation

RN2001~2006

PC

400

mW

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55~150

°C

1	2001-06-07

RN2001~RN2006

Electrical Characteristics (Ta = 25°C)

	Characteristic		Symbol	Test	Test Condition	Min	Typ.	Max	Unit
				Circuit
	Collector cut-off	RN2001~2006	ICBO	―	VCB = −50V, IE = 0	―	―	−100	nA
	current		ICEO		VCE = −50V, IB = 0	―	―	−500
		RN2001				−0.82	―	−1.52
		RN2002			VEB = −10V, IC = 0	−0.38	―	−0.71
	Emitter cut-off current	RN2003	IEBO	―		−0.17	―	−0.33	mA
		RN2004				−0.082	―	−0.15
		RN2005			VEB = −5V, IC = 0	−0.078	―	−0.145
		RN2006				−0.074	―	−0.138
		RN2001				30	―	―
		RN2002				50	―	―
	DC current gain	RN2003	hFE	―	VCE = −5V,	70	―	―
		RN2004			IC = −10mA	80	―	―
		RN2005				80	―	―
		RN2006				80	―	―
	Collector-emitter	RN2001~2006	VCE (sat)	―	IC = −5mA,	―	−0.1	−0.3	V
	saturation voltage				IB = −0.25mA
		RN2001				−1.1	―	−2.0
		RN2002				−1.2	―	−2.4
	Input voltage (ON)	RN2003	VI (ON)	―	VCE = −0.2V,	−1.3	―	−3.0	V
		RN2004				−1.5	―	−5.0
					IC = −5mA
		RN2005				−0.6	―	−1.1
		RN2006				−0.7	―	−1.3
	Input voltage (OFF)	RN2001~2004	VI (OFF)	―	VCE = −5V,	−1.0	―	−1.5	V
		RN2005, 2006				−0.5	―	−0.8
					IC = −0.1mA
	Transition frequency	RN2001~2006	fT	―	VCE = −10V,	―	200	―	MHz
					IC = −5mA
	Collector Output	RN2001~2006	Cob	―	VCB = −10V, IE = 0,	―	3	6	pF
	capacitance				f = 1MHz
		RN2001				3.29	4.7	6.11
		RN2002				7	10	13
	Input resistor	RN2003	R1	―		15.4	22	28.6	kΩ
		RN2004				32.9	47	61.1
		RN2005				1.54	2.2	2.86
		RN2006				3.29	4.7	6.11
		RN2001~2004				0.9	1.0	1.1
	Resistor ratio		R1/R2	―
		RN2005				0.0421	0.0468	0.0515
		RN2006				0.09	0.1	0.11

2	2001-06-07