Toshiba RN1107F, RN1108F, RN1109F Schematic [ru]

0 (0)
RN1107F~RN1109F
2001-06-07
1
Type No. R1 (k)R2 (k)
RN1107F 10
47
RN1108F 22
47
RN1109F 47
22
RN1107F,RN1108F,RN1109F
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l With built-in bias resistors.
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2107F~2109F
Equivalent Circuit and Bias Resistor Values
Maximum Ratings
(Ta = 25°
°°
°C)
JEDEC
EIAJ
TOSHIBA 2-2HA1A
Characteristic Symbol Rating Unit
Collector-base voltage RN1107F~1109F V
CBO
50 V
Collector-emitter voltage RN1107F~1109F V
CEO
50 V
RN1107F 6
RN1108F 7
Emitter-base voltage
RN1109F
V
EBO
15
V
Collector current RN1107F~1109F I
c
100 mA
Collector power dissipation RN1107F~1109F P
c
100 mW
Junction temperature RN1107F~1109F T
j
150 °C
Storage temperature range RN1107F~1109F T
stg
55~150 °C
Unit: mm
RN1107F~RN1109F
2001-06-07
2
Electrical Characteristics
(Ta = 25°
°°
°C)
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
I
CBO
V
CB
= 50V, I
E
= 0
100 nA
Collector cut-off current RN1107F~1109F
I
CEO
V
CE
= 50V, I
B
= 0
500 nA
RN1107F
V
EB
= 6V, I
C
= 0 0.081
0.15
RN1108F
V
EB
= 7V, I
C
= 0 0.078
0.145
Emitter cut-off current
RN1109F
I
EBO
V
EB
= 15V, I
C
= 0 0.167
0.311
mA
RN1107F
80
RN1108F
80
DC current gain
RN1109F
h
FE
V
CE
= 5V, I
C
= 10mA
70
Collector-emitter
saturation voltage
RN1107F~1109F V
CE (sat)
I
C
= 5mA, I
B
= 0.25mA 0.1 0.3 V
RN1107F
0.7
1.8
RN1108F
1.0
2.6
Input voltage (ON)
RN1109F
V
I (ON)
V
CE
= 0.2V, I
C
= 5mA
2.2
5.8
V
RN1107F
0.5
1.0
RN1108F
0.6
1.16
Input voltage (OFF)
RN1109F
V
I (OFF)
V
CE
= 5V, I
C
= 0.1mA
1.5
2.6
V
Translation frequency RN1107F~1109F f
T
V
CE
=10V, I
C
= 5mA 250 MHz
Collector output
capacitance
RN1107F~1109F C
ob
V
CB
= 10V, I
E
= 0,
f = 1MHz
3 6 pF
RN1107F
7 10 13
RN1108F
15.4 22 28.6
Input Resistor
RN1109F
R1
32.9 47 61.1
k
RN1107F
0.191 0.213 0.232
RN1108F
0.421 0.468 0.515
Resistor Ratio
RN1109F
R1/R2
1.92 2.14 2.35
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