Toshiba RN1101F, RN1102F, RN1103F, RN1104F, RN1105F Schematic [ru]

RN1101F~RN1106F

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1101F,RN1102F,RN1103F

RN1104F,RN1105F,RN1106F

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Unit in mm

lWith built-in bias resistors

lSimplify circuit design

lReduce a quantity of parts and manufacturing process

lComplementary to RN2101F~RN2106F

Equivalent Circuit And Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1101F

4.7

4.7

RN1102F

10

10

RN1103F

22

22

RN1104F

47

47

RN1105F

2.2

47

RN1106F

4.7

47

JEDEC

―

EIAJ

―

Maximum Ratings (Ta = 25°C)

TOSHIBA

2-2H1A

Weight: 2.3 mg

Characteristic

Symbol

Rating

Unit

Collector-base voltage

RN1101F~1106F

VCBO

50

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

RN1101F~1104F

VEBO

10

V

RN1105F, 1106F

5

Collector current

IC

100

mA

Collector power dissipation

RN1101F~1106F

PC

100

mW

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55~150

°C

000707EAA2

·TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

·The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.

2001-02-08 1/7

RN1101F~RN1106F

Electrical Characteristics (Ta = 25°C)

	Characteristic		Symbol	Test	Test Condition	Min	Typ.	Max	Unit
				Circuit
	Collector cut-off	RN1101F	ICBO	―	VCB = 50V, IE = 0	―	―	100	nA
	current	~1106F	ICEO		VCE = 50V, IB = 0	―	―	500
		RN1101F				0.82	―	1.52
		RN1102F			VEB = 10V, IC = 0	0.38	―	0.71
	Emitter cut-off current	RN1103F	IEBO	―		0.17	―	0.33	mA
		RN1104F				0.082	―	0.15
		RN1105F			VEB = 5V, IC = 0	0.078	―	0.145
		RN1106F				0.074	―	0.138
		RN1101F				30	―	―
		RN1102F				50	―	―
	DC current gain	RN1103F	hFE	―	VCE = 5V, IC = 10mA	70	―	―	―
		RN1104F				80	―	―
		RN1105F				80	―	―
		RN1106F				80	―	―
	Collector-emitter	RN1101F	VCE (sat)	―	IC = 5mA, IB = 0.25mA	―	0.1	0.3	V
	saturation voltage	~1106F
		RN1101F				1.1	―	2.0
		RN1102F				1.2	―	2.4
	Input voltage (ON)	RN1103F	VI (ON)	―	VCE = 0.2V, IC = 5mA	1.3	―	3.0	V
		RN1104F				1.5	―	5.0
		RN1105F				0.6	―	1.1
		RN1106F				0.7	―	1.3
		RN1101F				1.0	―	1.5
		~1104F
	Input voltage (OFF)		VI (OFF)	―	VCE = 5V, IC = 0.1mA				V
		RN1105F,				0.5	―	0.8
		1106F
	Transition frequency	RN1101F	fT	―	VCE = 10V, IC = 5mA	―	250	―	MHz
		~1106F
	Collector Output	RN1101F	Cob	―	VCB = 10V, IE = 0,	―	3	6	pF
	capacitance	~1106F			f = 1MHz
		RN1101F				3.29	4.7	6.11
		RN1102F				7	10	13
	Input resistor	RN1103F	R1	―	―	15.4	22	28.6	kΩ
		RN1104F				32.9	47	61.1
		RN1105F				1.54	2.2	2.86
		RN1106F				3.29	4.7	6.11
		RN1101F				0.9	1.0	1.1
		~1104F
	Resistor ratio		R1/R2	―	―
		RN1105F				0.0421	0.0468	0.0515
		RN1106F				0.09	0.1	0.11

000707EAA2

·The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.

·The information contained herein is subject to change without notice.

2001-02-08 2/7

RN1101F~RN1106F

2001-02-08 3/7