TEXAS INSTRUMENTS XTR115, XTR116 Technical data

XTR115
XTR115
XTR116
XTR116
SBOS124A – JANUARY 2000 – REVISED NOVEMBER 2003
4-20mA CURRENT LOOP TRANSMITTERS
FEATURES
LOW QUIESCENT CURRENT: 200µA
5V REGULATOR FOR EXTERNAL CIRCUITS
V
FOR SENSOR EXCITATION:
REF
LOW SPAN ERROR: 0.05%
LOW NONLINEARITY ERROR: 0.003%
WIDE LOOP SUPPLY RANGE: 7.5V to 36V
SO-8 PACKAGE
DESCRIPTION
The XTR115 and XTR116 are precision current out­put converters designed to transmit analog 4-to-20mA signals over an industry standard current loop. They provide accurate current scaling and output current limit functions.
The on-chip voltage regulator (5V) can be used to power external circuitry. A precision on-chip V (2.5V for XTR115 and 4.096V for XTR116) can be
REF
APPLICATIONS
2-WIRE, 4-20mA CURRENT LOOP
TRANSMITTER
SMART TRANSMITTER
INDUSTRIAL PROCESS CONTROL
TEST SYSTEMS
COMPATIBLE WITH HART MODEM
CURRENT AMPLIFIER
VOLTAGE-TO-CURRENT AMPLIFIER
used for offsetting or to excite transducers. A current return pin (I circuitry to assure an accurate control of the output current.
The XTR115 is a fundamental building block of smart sensors using 4-to-20mA current transmission.
The XTR115 and XTR116 are specified for opera­tion over the extended industrial temperature range, –40°C to +85°C.
) senses any current used in external
RET
XTR115 XTR116
V
+5V
XTR115: 2.5V
XTR116: 4.096V
+
V
IN
REG
8
V
REF
1
R
IN
I
IN
2
3
I
RET
R
1
2.475k
Voltage
Reference
A1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
+5V
Regulator
R
LIM
R
2
25
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V+ 7
V B 6
E 5
100 V
IN
I
=
O
R
IN
4
I = 100 • I
IN
Copyright © 2000-2003, Texas Instruments Incorporated
LOOP
R
L
SPECIFICATIONS
At TA = +25°C, V+ = 24V, R
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS OUTPUT
Output Current Equation I Output Current, Linear Range 0.25 25 ✻✻mA Over-Scale Limit I Under-Scale Limit I
SPAN
Span (Current Gain) S 100 A/A
(1)
Error
vs Temperature T
Nonlinearity I
INPUT
Offset Voltage (Op Amp) V
vs Temperature T vs Supply Voltage, V+ V+ = 7.5V to 36V ±0.1 ±2 ✻✻ µV/V
Bias Current I
vs Temperature 150 pA/°C
Noise: 0.1Hz to 10Hz e
DYNAMIC RESPONSE
Small Signal Bandwidth C Slew Rate 3.2 mA/µs
(2)
V
REF
XTR115 2.5 V XTR116 4.096 V
Voltage Accuracy I
vs Temperature T vs Supply Voltage, V+ V+ = 7.5V to 36V ±1 ±10 ✻✻ ppm/V
vs Load I Noise: 0.1Hz to 10Hz 10 µVp-p Short-Circuit Current 16 mA
(2)
V
REG
Voltage 5 V Voltage Accuracy I
vs Temperature T
vs Supply Voltage, V+ V+ = 7.5V to 36V 1 mV/V
vs Output Current See Typical Curves Short-Circuit Current 12 mA
POWER SUPPLY V+ Specified +24 V Voltage Range +7.5 +36 ✻✻V Quiescent Current 200 250 ✻✻ µA
Over Temperature, –40°C to +85°C 240 300 ✻✻ µA
TEMPERATURE RANGE
Specification –40 +85 ✻✻°C Operating –55 +125 ✻✻°C Storage –55 +125 ✻✻°C Thermal Resistance
Specifications the same as XTR115U and XTR116U. NOTES: (1) Does not include initial error or TCR of R
= 20k, and TIP29C external transistor, unless otherwise noted.
IN
IO = IIN 100
MIN
LIM
O
I
= 0, I
REG
= 0 0.2 0.25 ✻✻ mA
REF
IIN = 250µA to 25mA ±0.05 ±0.2 ±0.4 %
= –40°C to +85°C ±3 ±20 ✻✻ ppm/°C
A
= 250µA to 25mA ±0.003 ±0.01 ±0.02 %
IN
OS
B
n
θ
JA
IIN = 40µA ±100 ±250 ±500 µV
= –40°C to +85°C ±0.7 ±3 ±6 µV/°C
A
= 0, RL = 0 380 kHz
LOOP
= 0 ±0.05 ±0.25 ±0.5 %
REF
= –40°C to +85°C ±20 ±35 ±75 ppm/°C
A
= 0mA to 2.5mA ±100 ppm/mA
REF
= 0 ±0.05 ±0.1 ✻✻ V
REG
= –40°C to +85°C ±0.1 mV/°C
A
. (2) Voltage measured with respect to I
IN
XTR115U XTR115UA XTR116U XTR116UA
32 mA
–35 nA
0.6 µVp-p
150 °C/W
pin.
RET
2
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XTR115, XTR116
SBOS124A
PIN CONFIGURATION
Top View SO-8
1
V
REF
2
IIN
3
I
RET
4
I
O
8
V
7
V+
6
B (Base)
5
E (Emitter)
REG
ABSOLUTE MAXIMUM RATINGS
Power Supply, V+ (referenced to IO pin).......................................... 40V
Input Voltage (referenced to I
Output Current Limit ............................................................... Continuous
V
, Short-Circuit.................................................................. Continuous
REG
V
, Short-Circuit .................................................................. Continuous
REF
Operating Temperature ................................................ –55°C to +125°C
Storage Temperature Range ....................................... –55°C to +125°C
Lead Temperature (soldering, 10s) .............................................. +300°C
Junction Temperature ................................................................... +165°C
NOTE: (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability.
pin)........................................0V to V+
RET
(1)
ELECTROSTATIC
PACKAGE/ORDERING INFORMATION
For the most current package and ordering information, see the Package Option Addendum located at the end of this data sheet.
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instru­ments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degrada­tion to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
XTR115, XTR116
SBOS124A
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3
TYPICAL PERFORMANCE CURVES
At TA = +25°C, V+ = 24V, R
= 20k, and TIP29C external transistor, unless otherwise noted.
IN
CURRENT GAIN vs FREQUENCY
40
30
Gain (dB)
20
10
10k 100k
0.1
0
0.1
0.2
Reference Voltage (%)
REFERENCE VOLTAGE vs TEMPERATURE
C
R
Frequency (Hz)
= 10nF
OUT
= 250
L
C
R
OUT
= 0
L
= 0
1M
260
240
220
200
Quiescent Current (µA)
180
160
QUIESCENT CURRENT vs TEMPERATURE
(V+) = 36V
(V+) = 7.5V
–75 –50 –25 0 25 50 75 100
Temperature (°C)
OVER-SCALE CURRENT vs TEMPERATURE
34
With External Transistor
33
32
V+ = 36V
31
30
Over-Scale Current (mA)
29
V+ = 24V
V+ = 7.5V
(V+) = 24V
125
0.3
75 50 25 0 25 50 75 100
Temperature (°C)
V
5.5 +125°C
VOLTAGE vs V
REG
CURRENT
REG
–55°C
5.0
+25°C
Voltage (V)
REG
V
Sinking Current
Sourcing
Current
+25°C
4.5
–10123
Current (mA)
I
REG
–55°C
+125°C
125
28
–75 –50 –250 255075100
125
Temperature (°C)
4
4
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XTR115, XTR116
SBOS124A
APPLICATIONS INFORMATION
The XTR115 and XTR116 are identical devices except for the reference voltage output, pin 1. This voltage is available for external circuitry and is not used internally. Further discussions that apply to both devices will refer to the “XTR115/6.”
Figure 1 shows basic circuit connections with representative simplified input circuitry. The XTR115/6 is a two-wire current transmitter. Its input signal (pin 2) controls the output current. A portion of this current flows into the V+ power supply, pin 7. The remaining current flows in Q1. External input circuitry connected to the XTR115/6 can be powered from V must be returned to I ground” for input circuitry driving the XTR115/6.
The XTR115/6 is a current-input device with a gain of 100. A current flowing into pin 2 produces IO = 100 • IIN. The input voltage at the IIN pin is zero (referred to the I A voltage input is created with an external input resistor, as shown. Common full-scale input voltages range from 1V
REG
or V
. Current drawn from these terminals
REF
, pin 3. This I
RET
pin is a “local
RET
RET
pin).
and upward. Full-scale inputs greater than 0.5V are recom­mend to minimize the effect of offset voltage and drift of A1.
EXTERNAL TRANSISTOR
The external transistor, Q1, conducts the majority of the full­scale output current. Power dissipation in this transistor can approach 0.8W with high loop voltage (40V) and 20mA output current. The XTR115/6 is designed to use an external transistor to avoid on-chip thermal-induced errors. Heat produced by Q1 will still cause ambient temperature changes that can affect the XTR115/6. To minimize these effects, locate Q1 away from sensitive analog circuitry, including XTR115/6. Mount Q1 so that heat is conducted to the outside of the transducer housing.
The XTR115/6 is designed to use virtually any NPN transis­tor with sufficient voltage, current and power rating. Case style and thermal mounting considerations often influence the choice for any given application. Several possible choices are listed in Figure 1. A MOSFET transistor will not improve the accuracy of the XTR115/6 and is not recommended.
XTR115: 2.5V
XTR116: 4.096V
For IO = 4mA to 20mA
I
IN
With R
V
Input
Circuitry
= 40µA to 200µA
= 20k
IN
= 0.8V to 4V
IN
I
REG
I
REF
R
20k
V
IN
All return current
from I
REG
NOTE: (1) See also Figure 5.
IN
and I
XTR115 XTR116
V
5V
REF
REG
8
(1)
V
REF
1
I
IN
I
IN
2
3
I
RET
R
1
2.475k
Voltage
Reference
A1
+5V
Regulator
R
25
V+ 7
B
Q
1
6
E
R
LIM
2
5
I
O
4
I
O
10nF
I = 100 • I
IN
Possible choices for Q1 (see text).
TYPE
2N4922 TIP29C TIP31B
PACKAGE
TO-225 TO-220 TO-220
V
LOOP
R
L
FIGURE 1. Basic Circuit Connections.
XTR115, XTR116
SBOS124A
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