TEXAS INSTRUMENTS XTR115, XTR116 Technical data

XTR115
XTR115
XTR116
XTR116
SBOS124A – JANUARY 2000 – REVISED NOVEMBER 2003
4-20mA CURRENT LOOP TRANSMITTERS
FEATURES
LOW QUIESCENT CURRENT: 200µA
5V REGULATOR FOR EXTERNAL CIRCUITS
V
FOR SENSOR EXCITATION:
REF
LOW SPAN ERROR: 0.05%
LOW NONLINEARITY ERROR: 0.003%
WIDE LOOP SUPPLY RANGE: 7.5V to 36V
SO-8 PACKAGE
DESCRIPTION
The XTR115 and XTR116 are precision current out­put converters designed to transmit analog 4-to-20mA signals over an industry standard current loop. They provide accurate current scaling and output current limit functions.
The on-chip voltage regulator (5V) can be used to power external circuitry. A precision on-chip V (2.5V for XTR115 and 4.096V for XTR116) can be
REF
APPLICATIONS
2-WIRE, 4-20mA CURRENT LOOP
TRANSMITTER
SMART TRANSMITTER
INDUSTRIAL PROCESS CONTROL
TEST SYSTEMS
COMPATIBLE WITH HART MODEM
CURRENT AMPLIFIER
VOLTAGE-TO-CURRENT AMPLIFIER
used for offsetting or to excite transducers. A current return pin (I circuitry to assure an accurate control of the output current.
The XTR115 is a fundamental building block of smart sensors using 4-to-20mA current transmission.
The XTR115 and XTR116 are specified for opera­tion over the extended industrial temperature range, –40°C to +85°C.
) senses any current used in external
RET
XTR115 XTR116
V
+5V
XTR115: 2.5V
XTR116: 4.096V
+
V
IN
REG
8
V
REF
1
R
IN
I
IN
2
3
I
RET
R
1
2.475k
Voltage
Reference
A1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
+5V
Regulator
R
LIM
R
2
25
www.ti.com
V+ 7
V B 6
E 5
100 V
IN
I
=
O
R
IN
4
I = 100 • I
IN
Copyright © 2000-2003, Texas Instruments Incorporated
LOOP
R
L
SPECIFICATIONS
At TA = +25°C, V+ = 24V, R
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS OUTPUT
Output Current Equation I Output Current, Linear Range 0.25 25 ✻✻mA Over-Scale Limit I Under-Scale Limit I
SPAN
Span (Current Gain) S 100 A/A
(1)
Error
vs Temperature T
Nonlinearity I
INPUT
Offset Voltage (Op Amp) V
vs Temperature T vs Supply Voltage, V+ V+ = 7.5V to 36V ±0.1 ±2 ✻✻ µV/V
Bias Current I
vs Temperature 150 pA/°C
Noise: 0.1Hz to 10Hz e
DYNAMIC RESPONSE
Small Signal Bandwidth C Slew Rate 3.2 mA/µs
(2)
V
REF
XTR115 2.5 V XTR116 4.096 V
Voltage Accuracy I
vs Temperature T vs Supply Voltage, V+ V+ = 7.5V to 36V ±1 ±10 ✻✻ ppm/V
vs Load I Noise: 0.1Hz to 10Hz 10 µVp-p Short-Circuit Current 16 mA
(2)
V
REG
Voltage 5 V Voltage Accuracy I
vs Temperature T
vs Supply Voltage, V+ V+ = 7.5V to 36V 1 mV/V
vs Output Current See Typical Curves Short-Circuit Current 12 mA
POWER SUPPLY V+ Specified +24 V Voltage Range +7.5 +36 ✻✻V Quiescent Current 200 250 ✻✻ µA
Over Temperature, –40°C to +85°C 240 300 ✻✻ µA
TEMPERATURE RANGE
Specification –40 +85 ✻✻°C Operating –55 +125 ✻✻°C Storage –55 +125 ✻✻°C Thermal Resistance
Specifications the same as XTR115U and XTR116U. NOTES: (1) Does not include initial error or TCR of R
= 20k, and TIP29C external transistor, unless otherwise noted.
IN
IO = IIN 100
MIN
LIM
O
I
= 0, I
REG
= 0 0.2 0.25 ✻✻ mA
REF
IIN = 250µA to 25mA ±0.05 ±0.2 ±0.4 %
= –40°C to +85°C ±3 ±20 ✻✻ ppm/°C
A
= 250µA to 25mA ±0.003 ±0.01 ±0.02 %
IN
OS
B
n
θ
JA
IIN = 40µA ±100 ±250 ±500 µV
= –40°C to +85°C ±0.7 ±3 ±6 µV/°C
A
= 0, RL = 0 380 kHz
LOOP
= 0 ±0.05 ±0.25 ±0.5 %
REF
= –40°C to +85°C ±20 ±35 ±75 ppm/°C
A
= 0mA to 2.5mA ±100 ppm/mA
REF
= 0 ±0.05 ±0.1 ✻✻ V
REG
= –40°C to +85°C ±0.1 mV/°C
A
. (2) Voltage measured with respect to I
IN
XTR115U XTR115UA XTR116U XTR116UA
32 mA
–35 nA
0.6 µVp-p
150 °C/W
pin.
RET
2
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XTR115, XTR116
SBOS124A
PIN CONFIGURATION
Top View SO-8
1
V
REF
2
IIN
3
I
RET
4
I
O
8
V
7
V+
6
B (Base)
5
E (Emitter)
REG
ABSOLUTE MAXIMUM RATINGS
Power Supply, V+ (referenced to IO pin).......................................... 40V
Input Voltage (referenced to I
Output Current Limit ............................................................... Continuous
V
, Short-Circuit.................................................................. Continuous
REG
V
, Short-Circuit .................................................................. Continuous
REF
Operating Temperature ................................................ –55°C to +125°C
Storage Temperature Range ....................................... –55°C to +125°C
Lead Temperature (soldering, 10s) .............................................. +300°C
Junction Temperature ................................................................... +165°C
NOTE: (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability.
pin)........................................0V to V+
RET
(1)
ELECTROSTATIC
PACKAGE/ORDERING INFORMATION
For the most current package and ordering information, see the Package Option Addendum located at the end of this data sheet.
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instru­ments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degrada­tion to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
XTR115, XTR116
SBOS124A
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3
TYPICAL PERFORMANCE CURVES
At TA = +25°C, V+ = 24V, R
= 20k, and TIP29C external transistor, unless otherwise noted.
IN
CURRENT GAIN vs FREQUENCY
40
30
Gain (dB)
20
10
10k 100k
0.1
0
0.1
0.2
Reference Voltage (%)
REFERENCE VOLTAGE vs TEMPERATURE
C
R
Frequency (Hz)
= 10nF
OUT
= 250
L
C
R
OUT
= 0
L
= 0
1M
260
240
220
200
Quiescent Current (µA)
180
160
QUIESCENT CURRENT vs TEMPERATURE
(V+) = 36V
(V+) = 7.5V
–75 –50 –25 0 25 50 75 100
Temperature (°C)
OVER-SCALE CURRENT vs TEMPERATURE
34
With External Transistor
33
32
V+ = 36V
31
30
Over-Scale Current (mA)
29
V+ = 24V
V+ = 7.5V
(V+) = 24V
125
0.3
75 50 25 0 25 50 75 100
Temperature (°C)
V
5.5 +125°C
VOLTAGE vs V
REG
CURRENT
REG
–55°C
5.0
+25°C
Voltage (V)
REG
V
Sinking Current
Sourcing
Current
+25°C
4.5
–10123
Current (mA)
I
REG
–55°C
+125°C
125
28
–75 –50 –250 255075100
125
Temperature (°C)
4
4
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XTR115, XTR116
SBOS124A
APPLICATIONS INFORMATION
The XTR115 and XTR116 are identical devices except for the reference voltage output, pin 1. This voltage is available for external circuitry and is not used internally. Further discussions that apply to both devices will refer to the “XTR115/6.”
Figure 1 shows basic circuit connections with representative simplified input circuitry. The XTR115/6 is a two-wire current transmitter. Its input signal (pin 2) controls the output current. A portion of this current flows into the V+ power supply, pin 7. The remaining current flows in Q1. External input circuitry connected to the XTR115/6 can be powered from V must be returned to I ground” for input circuitry driving the XTR115/6.
The XTR115/6 is a current-input device with a gain of 100. A current flowing into pin 2 produces IO = 100 • IIN. The input voltage at the IIN pin is zero (referred to the I A voltage input is created with an external input resistor, as shown. Common full-scale input voltages range from 1V
REG
or V
. Current drawn from these terminals
REF
, pin 3. This I
RET
pin is a “local
RET
RET
pin).
and upward. Full-scale inputs greater than 0.5V are recom­mend to minimize the effect of offset voltage and drift of A1.
EXTERNAL TRANSISTOR
The external transistor, Q1, conducts the majority of the full­scale output current. Power dissipation in this transistor can approach 0.8W with high loop voltage (40V) and 20mA output current. The XTR115/6 is designed to use an external transistor to avoid on-chip thermal-induced errors. Heat produced by Q1 will still cause ambient temperature changes that can affect the XTR115/6. To minimize these effects, locate Q1 away from sensitive analog circuitry, including XTR115/6. Mount Q1 so that heat is conducted to the outside of the transducer housing.
The XTR115/6 is designed to use virtually any NPN transis­tor with sufficient voltage, current and power rating. Case style and thermal mounting considerations often influence the choice for any given application. Several possible choices are listed in Figure 1. A MOSFET transistor will not improve the accuracy of the XTR115/6 and is not recommended.
XTR115: 2.5V
XTR116: 4.096V
For IO = 4mA to 20mA
I
IN
With R
V
Input
Circuitry
= 40µA to 200µA
= 20k
IN
= 0.8V to 4V
IN
I
REG
I
REF
R
20k
V
IN
All return current
from I
REG
NOTE: (1) See also Figure 5.
IN
and I
XTR115 XTR116
V
5V
REF
REG
8
(1)
V
REF
1
I
IN
I
IN
2
3
I
RET
R
1
2.475k
Voltage
Reference
A1
+5V
Regulator
R
25
V+ 7
B
Q
1
6
E
R
LIM
2
5
I
O
4
I
O
10nF
I = 100 • I
IN
Possible choices for Q1 (see text).
TYPE
2N4922 TIP29C TIP31B
PACKAGE
TO-225 TO-220 TO-220
V
LOOP
R
L
FIGURE 1. Basic Circuit Connections.
XTR115, XTR116
SBOS124A
www.ti.com
5
MINIMUM-SCALE CURRENT
The quiescent current of the XTR115/6 (typically 200µA) is the lower limit of its output current. Zero input current (IIN = 0) will produce an IO equal to the quiescent current. Output current will not begin to increase until IIN > IQ/100. Current drawn from V
REF
or V
will add to this minimum
REG
output current. This means that more than 3.7mA is avail­able to power external circuitry while still allowing the output current to go below 4mA.
OFFSETTING THE INPUT
A low scale of 4mA is produced by creating a 40µA input current. This can be created with the proper value resistor from V
(Figure 2), or by generating offset in the input
REF
drive circuitry.
XTR115
V
REG
V
40µA
R
62.5k
0 to 160µA
2.5V
0
REF
Voltage
Reference
I
IN
A1
MAXIMUM OUTPUT CURRENT
The XTR115/6 provides accurate, linear output up to 25mA. Internal circuitry limits the output current to approximately 32mA to protect the transmitter and loop power/measure­ment circuitry.
It is possible to extend the output current range of the XTR115/6 by connecting an external resistor from pin 3 to pin 5, to change the current limit value. Since all output current must flow through internal resistors, it is possible to damage with excessive current. Output currents greater than 45mA may cause permanent damage.
XTR115
V
REG
XTR116
V
REF
R
IN
XTR115
V
REG
XTR116
V
REF
I
IN
I
RET
XTR115
V
REG
XTR116
Digital
Control
Optical
Isolation
V
O
D/A
I
O
D/A
5V
I
RET
R
1
2.475k
Digital
Control
Optical
Isolation
µC
PWM
Filter
Out
FIGURE 2. Creating Low-Scale Offset. FIGURE 3. Digital Control Methods.
R
IN
I
RET
6
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XTR115, XTR116
SBOS124A
REVERSE-VOLTAGE PROTECTION
The XTR115/6 low compliance voltage rating (7.5V) per­mits the use of various voltage protection methods without compromising operating range. Figure 4 shows a diode bridge circuit which allows normal operation even when the voltage connection lines are reversed. The bridge causes a two diode drop (approximately 1.4V) loss in loop supply voltage. This results in a compliance voltage of approxi­mately 9V—satisfactory for most applications. A diode can be inserted in series with the loop supply voltage and the V+ pin to protect against reverse output connection lines with only a 0.7V loss in loop supply voltage.
OVER-VOLTAGE SURGE PROTECTION
Remote connections to current transmitters can sometimes be subjected to voltage surges. It is prudent to limit the maximum surge voltage applied to the XTR115/6 to as low as practical. Various zener diode and surge clamping diodes are specially designed for this purpose. Select a clamp diode with as low a voltage rating as possible for best protection. For example, a 36V protection diode will assure proper transmitter operation at normal loop voltages, yet will provide an appropriate level of protection against voltage surges. Characterization tests on several production lots showed no damage with loop supply voltages up to 65V.
Most surge protection zener diodes have a diode character­istic in the forward direction that will conduct excessive current, possibly damaging receiving-side circuitry if the loop connections are reversed. If a surge protection diode is used, a series diode or diode bridge should be used for protection against reversed connections.
RADIO FREQUENCY INTERFERENCE
The long wire lengths of current loops invite radio frequency interference. RF can be rectified by the input circuitry of the XTR115/6 or preceding circuitry. This generally appears as an unstable output current that varies with the position of loop supply or input wiring.
Interference may also enter at the input terminals. For integrated transmitter assemblies with short connection to the sensor, the interference more likely comes from the current loop connections.
8
V
REG
1
V
REF
R
IN
2
V
IN
3
I
I
IN
RET
XTR115 XTR116
V+
7
6
B
E
5
I
O
4
NOTE: (1) Zener Diode 36V: 1N4753A or Motorola P6KE39A. Use lower voltage zener diodes with loop power supply voltages less than 30V for increased protection. See Over-Voltage Surge Protection.
0.01µF
Q
1
D
1
FIGURE 4. Reverse Voltage Operation and Over-Voltage Surge Protection.
(1)
1N4148
Diodes
The diode bridge causes a 1.4V loss in loop supply voltage.
R
L
must be
PS
V
PS
Maximum V less than minimum voltage rating of zener diode.
XTR115, XTR116
SBOS124A
www.ti.com
7
8
XTR115, XTR116
SBOS124A
PACKAGE OPTION ADDENDUM
www.ti.com
22-Oct-2007
PACKAGING INFORMATION
Orderable Device Status
(1)
Package
Type
Package Drawing
Pins Package
Qty
Eco Plan
XTR115U ACTIVE SOIC D 8 100 Green (RoHS &
no Sb/Br)
XTR115U/2K5 ACTIVE SOIC D 8 2500 Green (RoHS &
no Sb/Br)
XTR115U/2K5E4 ACTIVE SOIC D 8 2500 Green (RoHS &
no Sb/Br)
XTR115UA ACTIVE SOIC D 8 100 Green (RoHS &
no Sb/Br)
XTR115UA/2K5 ACTIVE SOIC D 8 2500 Green (RoHS &
no Sb/Br)
XTR115UA/2K5E4 ACTIVE SOIC D 8 2500 Green (RoHS &
no Sb/Br)
XTR115UAE4 ACTIVE SOIC D 8 100 Green (RoHS &
no Sb/Br)
XTR115UG4 ACTIVE SOIC D 8 100 Green (RoHS &
no Sb/Br)
XTR116U ACTIVE SOIC D 8 100 Green (RoHS &
no Sb/Br)
XTR116U/2K5 ACTIVE SOIC D 8 2500 Green (RoHS &
no Sb/Br)
XTR116U/2K5G4 ACTIVE SOIC D 8 2500 Green (RoHS &
no Sb/Br)
XTR116UA ACTIVE SOIC D 8 100 Green (RoHS &
no Sb/Br)
XTR116UA/2K5 ACTIVE SOIC D 8 2500 Green (RoHS &
no Sb/Br)
XTR116UA/2K5E4 ACTIVE SOIC D 8 2500 Green (RoHS &
no Sb/Br)
XTR116UAE4 ACTIVE SOIC D 8 100 Green (RoHS &
no Sb/Br)
XTR116UG4 ACTIVE SOIC D 8 100 Green (RoHS &
no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.
(2)
Lead/Ball Finish MSL Peak Temp
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
(3)
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
22-Oct-2007
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
TAPE AND REEL INFORMATION
11-Mar-2008
*All dimensions are nominal
Device Package
Type
XTR115U/2K5 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
XTR115UA/2K5 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
XTR116U/2K5 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
XTR116UA/2K5 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
Package Drawing
Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0 (mm) B0 (mm) K0 (mm) P1
(mm)W(mm)
Pin1
Quadrant
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Mar-2008
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
XTR115U/2K5 SOIC D 8 2500 346.0 346.0 29.0
XTR115UA/2K5 SOIC D 8 2500 346.0 346.0 29.0
XTR116U/2K5 SOIC D 8 2500 346.0 346.0 29.0
XTR116UA/2K5 SOIC D 8 2500 346.0 346.0 29.0
Pack Materials-Page 2
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