Texas Instruments TPS79301DBVREP, TPS79301MDBVREP, TPS79318DBVREP, TPS79325DBVREP, TPS793285DBVREP Schematic [ru]

...

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FEATURES

324

DBV PACKAGE

(TOP VIEW)

1IN

GND

OUT

BYPASS

Fixed Option

324

DBV PACKAGE

(TOP VIEW)

1IN

GND

OUT

BYPASS

Adjustable Option

• Controlled Baseline

• Enhanced Diminishing Manufacturing Sources

• Enhanced Product-Change Notification

• Qualification Pedigree

• 200-mA Low-Dropout Regulator With EN

• Available in 1.8 V, 2.5 V, 2.8 V, 2.85 V, 3 V,

• High PSRR (70 dB at 10 kHz)

• Ultralow Noise (32 µ V)

• Fast Start-Up Time (50 µ s)

• Stable With a 2.2- µ F Ceramic Capacitor

• Excellent Load/Line Transient

• Very Low Dropout Voltage

• 5-Pin SOT23 (DBV) Package

APPLICATIONS

• VCOs

• RF

• Bluetooth™, Wireless LAN

(1) Component qualification in accordance with JEDEC and

TPS79301-EP , , TPS79318-EP , , TPS79325-EP , , TPS79328-EP

TPS793285-EP , TPS79330-EP , TPS79333-EP , TPS793475-EP

ULTRALOW-NOISE, HIGH-PSRR, FAST RF 200-mA

LOW-DROPOUT LINEAR REGULATORS

– One Assembly/Test Site, One Fabrication

Site

(DMS) Support

(1)

3.3 V, 4.75 V, and Adjustable

(112 mV at Full Load, TPS79330)

industry standards to ensure reliable operation over specified temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits. time.

SGLS163B – APRIL 2003 – REVISED NOVEMBER 2006

DESCRIPTION

The TPS793xx family of low-dropout (LDO) low-power linear voltage regulators features high power-supply rejection ratio (PSRR), ultralow noise, fast start-up, and excellent line and load transient responses in a small-outline SOT23 package. Each device in the family is stable, with a small 2.2- µ F ceramic capacitor on the output. The TPS793xx family uses an advanced, proprietary, BiCMOS fabrication process to yield extremely low dropout voltages (e.g., 112 mV at 200 mA, TPS79330). Each device achieves fast start-up times (approximately 50 µ s with a 0.001- µ F bypass capacitor), while consuming very low quiescent current (170 µ A typical). Moreover, when the device is placed in standby mode, the supply current is reduced to less than 1 µ A. The TPS79328 exhibits approximately 32 µ V bypass capacitor. Applications with analog components that are noise sensitive, such as portable RF electronics, benefit from the high PSRR and low-noise features, as well as the fast response

of output voltage noise with a 0.1- µ F

RMS

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Bluetooth is a trademark of Bluetooth SIG, Inc.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

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10 100 1 k 10 k

100 k 1 M 10 M

Ripple Rejection − dB

f − Frequency − Hz

TPS79328

RIPPLE REJECTION

FREQUENCY

IO = 10 mA

VI = 3.8 V Co = 10 µF C

(byp)

= 0.01 µF

IO = 200 mA

100

0.05

0.1

0.15

0.2

0.25

0.3

100 1 k 10 k 100 k

f − Frequency − Hz

IO = 1 mA

VI = 3.8 V Co = 2.2 µF C

(byp)

= 0.1 µF

IO = 200 mA

TPS79328

OUTPUT SPECTRAL NOISE DENSITY

FREQUENCY

V/ HzOutput Spectral Noise Density −

TPS79301-EP , , TPS79318-EP , , TPS79325-EP , , TPS79328-EP TPS793285-EP , TPS79330-EP , TPS79333-EP , TPS793475-EP

SGLS163B – APRIL 2003 – REVISED NOVEMBER 2006

–40 ° C to 125 ° C

–55 ° C to 125 ° C 1.2 to 5.5 V TPS79301MDBVREP

(1) The DBVR indicates tape and reel of 3000 parts. (2) Product preview

VOLTAGE PACKAGE PART NUMBER SYMBOL

1.2 to 5.5 V TPS79301DBVREP

1.8 V TPS79318DBVREP

2.5 V TPS79325DBVREP

2.8 V TPS79328DBVREP

2.85 V TPS793285DBVREP 3 V TPS79330DBVREP

3.3 V TPS793333DBVREP

4.75 V TPS793475DBVREP

AVAILABLE OPTIONS

(1) (1) (1) (1) (2)

SOT23

(DBV)

(1) (2)

(1) (1)

(1)

PGVE PHHE

PGWE

PGXE

PHIE PGYE PHUE

PHJE

PMBM

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TPS79301-EP , , TPS79318-EP , , TPS79325-EP , , TPS79328-EP

TPS793285-EP , TPS79330-EP , TPS79333-EP , TPS793475-EP

SGLS163B – APRIL 2003 – REVISED NOVEMBER 2006

ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature range (unless otherwise noted)

Input voltage range Voltage range at EN VI+ V

Voltage on OUT –0.3 6 V Peak output current Internally limited

ESD rating

Continuous total power dissipation

Operating virtual junction temperature range –55 125 ° C

Storage temperature range –65 150 ° C

stg

(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to network ground terminal

(2)

(1)

MIN MAX UNIT

–0.3 6 V –0.3

Human-Body Model (HBM) 2 kV Changed-Device Model (CDM) 500 V

0.3

See Dissipation

Rating Table

Dissipation Ratings

BOARD PACKAGE R

(1)

Low K

(2)

High K

(1) The JEDEC low K (1s) board design used to derive this data was a 3-in × 3-in, two layer board with 2-oz copper traces on top of the

board.

(2) The JEDEC high K (2s2p) board design used to derive this data was a 3-in × 3-in, multilayer board with 1-oz internal power and ground

planes and 2-oz copper traces on top and bottom of the board.

DBV 63.75 ° C/W 256 ° C/W 3.906 mW/ ° C 391 mW 215 mW 156 mW DBV 63.75 ° C/W 178.3 ° C/W 5.609 mW/ ° C 561 mW 308 mW 224 mW

θ JC

θ JA

DERATING TA≤ 25 ° C TA= 70 ° C TA= 85 ° C

FACTOR ABOVE POWER POWER POWER

TA= 25 ° C RATING RATING RATING

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LineReg. (mV) +ǒ%ńV

Imax

* 2.7 V

100

1000

TPS79301-EP , , TPS79318-EP , , TPS79325-EP , , TPS79328-EP TPS793285-EP , TPS79330-EP , TPS79333-EP , TPS793475-EP

SGLS163B – APRIL 2003 – REVISED NOVEMBER 2006

ELECTRICAL CHARACTERISTICS

over recommended operating free-air temperature range, EN = VI, TJ= –55 to 125 ° C and TJ= –40 to 125 ° C, VI= V 1 V, IO= 1 mA, Co= 10 µ F, C

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Input voltage

Continuous output current

Operating junction temperature –55 125 ° C

Output voltage V

Quiescent current (GND current) µ A

Load regulation 0 µ A < IO< 200 mA, TJ= 25 ° C 5 mV

Output voltage line regulation ( ∆ VO/VO)

Output noise voltage (TPS79328) µ V

Time, start-up (TPS79328) C

Output current limit VO= 0 V Standby current EN = 0 V, 2.7 V < VI< 5.5 V 0.07 1 µ A High-level enable input voltage 2.7 V < VI< 5.5 V 2 V Low-level enable input voltage 2.7 V < VI< 5.5 V 0.7 V Input current (EN) EN = 0 –1 1 µ A

(1)

TPS79301

TPS79318

TPS79325

TPS79328

TPS793285

TPS79330

TPS79333

TPS793475

= 0.01 µ F (unless otherwise noted)

(byp)

(2)

0 µ A < IO< 200 mA, TJ= –40 to 125 ° C,

1.22 V ≤ VO≤ 5.2 V 0 µ A < IO< 200 mA, TJ= –55 to 125 ° C, 1.025

1.22 V ≤ VO≤ 5.2 V TJ= 25 ° C 1.8 0 µ A < IO< 200 mA, 2.8 V < VI< 5.5 V 1.764 1.836 TJ= 25 ° C 2.5 0 µ A < IO< 200 mA, 3.5 V < VI< 5.5 V 2.45 2.55 TJ= 25 ° C 2.8 0 µ A < IO< 200 mA, 3.8 V < VI< 5.5 V 2.744 2.856 TJ= 25 ° C 2.85 0 µ A < IO< 200 mA, 3.85 V < VI< 5.5 V 2.793 2.907 TJ= 25 ° C 3 0 µ A < IO< 200 mA, 4 V < VI< 5.5 V 2.94 3.06 TJ= 25 ° C 3.3 0 µ A < IO< 200 mA, 4.3 V < VI< 5.5 V 3.234 3.366 TJ= 25 ° C 4.75 0 µ A < IO< 200 mA, 5.25 V < VI< 5.5 V 4.655 4.845 0 µ A < IO< 200 mA, TJ= 25 ° C 170 0 µ A < IO< 200 mA 220

(4)

VO+ 1 V < VI≤ 5.5 V, TJ= 25 ° C 0.05 VO+ 1 V < VI≤ 5.5 V 0.12

BW = 200 Hz to 100 kHz, IO= 200 mA, TJ= 25 ° C

RL= 14 Ω , Co= 1 µ F, TJ= 25 ° C

2.7 5.5 V 0 200 mA

(3)

= 0.001 µ F 55

(byp)

= 0.0047 µ F 36

(byp)

= 0.01 µ F 33

(byp)

= 0.1 µ F 32

(byp)

= 0.001 µ F 50

(byp)

= 0.0047 µ F 70 µ s

(byp)

= 0.01 µ F 100

(3)

(byp)

0.98 Vo 1.02 Vo

0.97 Vo

285 600 mA

O(typ)

%/V

RMS

(1) To calculate the minimum input voltage for your maximum output current, use the following formula:

VI(min) = VO(max) + V

(2) Continuous output current and operating junction temperature are limited by internal protection circuitry, but it is not recommended that

the device operate under conditions beyond those specified in this table for extended periods of time.

(3) The minimum IN operating voltage is 2.7 V or V

output current is 200 mA.

(4) If VO≤ 2.5 V, then V

If VO≥ 2.5 V, then V

(max load)

+ 1 V, whichever is greater. The maximum IN voltage is 5.5 V. The maximum

O(typ)

= 2.7 V, V

Imin

= VO+ 1 V, V

Imin

= 5.5 V:

Imax

= 5.5 V.

Imax

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TPS79301-EP , , TPS79318-EP , , TPS79325-EP , , TPS79328-EP

TPS793285-EP , TPS79330-EP , TPS79333-EP , TPS793475-EP

SGLS163B – APRIL 2003 – REVISED NOVEMBER 2006

ELECTRICAL CHARACTERISTICS (continued)

over recommended operating free-air temperature range, EN = VI, TJ= –55 to 125 ° C and TJ= –40 to 125 ° C, VI= V 1 V, IO= 1 mA, Co= 10 µ F, C

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Input current (FB) (TPS79301) FB = 1.8 V 1 µ A

Power-supply ripple rejection

Dropout voltage

UVLO threshold V UVLO hysteresis TJ= 25 ° C V

(5)

TPS79328 dB

TPS79328

TPS793285

TPS79330 mV

TPS79333

TPS793475

= 0.01 µ F (unless otherwise noted)

(byp)

f = 100 Hz, TJ= 25 ° C, IO= 10 mA 70 f = 100 Hz, TJ= 25 ° C, IO= 200 mA 68 f = 10 Hz, TJ= 25 ° C, IO= 200 mA 70 f = 100 Hz, TJ= 25 ° C, IO= 200 mA 43 IO= 200 mA, TJ= 25 ° C 120 IO= 200 mA 200 IO= 200 mA, TJ= 25 ° C 120 IO= 200 mA 200 IO= 200 mA, TJ= 25 ° C 112 IO= 200 mA 200 IO= 200 mA, TJ= 25 ° C 102 IO= 200 mA 180 IO= 200 mA, TJ= 25 ° C 77 IO= 200 mA 125

rising 2.25 2.65 V

rising 100 mV

O(typ)

(5) IN voltage equals V

– 100 mV; The TPS79325 dropout voltage is limited by the input voltage range limitations.

O(typ)

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Thermal

Shutdown

Bandgap

Reference

Current

Sense

GND

OUT

SHUTDOWN

ref

UVLO

ILIM

External to the Device

UVLO

250 kΩ

Bypass

Thermal

Shutdown

Current

Sense

GND

OUT

SHUTDOWN

ref

UVLO

ILIM

Bandgap

Reference

UVLO

250 kΩ

Bypass

TPS79301-EP , , TPS79318-EP , , TPS79325-EP , , TPS79328-EP TPS793285-EP , TPS79330-EP , TPS79333-EP , TPS793475-EP

SGLS163B – APRIL 2003 – REVISED NOVEMBER 2006

FUNCTIONAL BLOCK DIAGRAM – ADJUSTABLE VERSION

DEVICE INFORMATION

FUNCTIONAL BLOCK DIAGRAM – FIXED VERSION

TERMINAL FUNCTIONS

TERMINAL

NAME ADJ FIXED

BYPASS 4 4

EN 3 3 I FB 5 N/A I Feedback input voltage for the adjustable device

GND 2 2 Regulator ground IN 1 1 I Input to the device OUT 6 5 O Regulated output of the device

I/O DESCRIPTION

An external bypass capacitor, connected to this terminal, in conjunction with an internal resistor, creates a low-pass filter to further reduce regulator noise.

Enable input that enables or shuts down the device. When EN goes to a logic high, the device is enabled. When the device goes to a logic low, the device is in shutdown mode.

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2.795

2.796

2.797

2.798

2.799

2.8

2.801

2.802

2.803

2.804

2.805

0 50 100 150 200

IO − Output Current − mA

TPS79328

OUTPUT VOLTAGE

OUTPUT CURRENT

VI = 3.8 V Co = 10 µF TJ = 25° C

− Output Voltage − V V

2.775

2.78

2.785

2.79

2.795

2.8

2.805

−40−25−10 5 20 35 50 65 80 95 110 125

TJ − Junction Temperature − °C

TPS79328

OUTPUT VOLTAGE

JUNCTION TEMPERATURE

− Output Voltage − V

IO = 200 mA

IO = 1 mA

VI = 3.8 V Co = 10 µF

100

150

200

250

−40−25−10 5 20 35 50 65 80 95 110 125

TJ − Junction Temperature − °C

TPS79328

GROUND CURRENT

JUNCTION TEMPERATURE

Ground Current − Aµ

IO = 1 mA

VI = 3.8 V Co = 10 µF

IO = 200 mA

0.05

0.1

0.15

0.2

0.25

0.3

100 1 k 10 k 100 k

f − Frequency − Hz

IO = 1 mA

VI = 3.8 V Co = 2.2 µF C

(byp)

= 0.1 µF

IO = 200 mA

TPS79328

OUTPUT SPECTRAL NOISE DENSITY

FREQUENCY

V/ HzOutput Spectral Noise Density −

0.05

0.1

0.15

0.2

0.25

0.3

100 1 k 10 k 100 k

V/ HzOutput Spectral Noise Density −

f − Frequency − Hz

IO = 1 mA

IO = 200 mA

TPS79328

OUTPUT SPECTRAL NOISE DENSITY

FREQUENCY

VI = 3.8 V Co = 10 µF C

(byp)

= 0.1 µF

0.2

0.4

0.6

0.8

1.2

1.4

1.6

100 1 k 10 k 100 k

f − Frequency − Hz

V/ HzOutput Spectral Noise Density −

TPS79328

OUTPUT SPECTRAL NOISE DENSITY

FREQUENCY

VI = 3.8 V IO = 200 mA Co= 10 µF

(byp)

= 0.1 µF

(byp)

= 0.001 µF

(byp)

= 0.0047 µF

(byp)

= 0.01 µF

100 1 M10 1 k

f − Frequency − Hz

10 k

− Output Impedance −Z o

Ω

OUTPUT IMPEDANCE

FREQUENCY

100 k

IO = 1 mA

0.5

1.5

2.5

IO = 100 mA

10 M

VI = 3.8 V Co = 10 µF TJ = 25° C

0.001 0.01 0.1

RMS − Root Mean Squared Output Noise −

ROOT MEAN SQUARED OUTPUT NOISE

BYPASS CAPACITANCE

(RMS)

Vµ

(byp)

− Bypass Capacitance − µF

VO = 2.8 V IO = 200 mA Co = 10 µF

BW = 100 Hz to 100 kHz

100

120

140

160

180

−40−25−10 5 20 35 50 65 80 95 110 125

IO = 200 mA

IO = 10 mA

VI = 2.7 V Co = 10 µF

TJ − Junction Temperature − °C

− Dropout Voltage − mV

TPS79328

DROPOUT VOLTAGE

JUNCTION TEMPERATURE

TPS79301-EP , , TPS79318-EP , , TPS79325-EP , , TPS79328-EP

TPS793285-EP , TPS79330-EP , TPS79333-EP , TPS793475-EP

SGLS163B – APRIL 2003 – REVISED NOVEMBER 2006

TYPICAL CHARACTERISTICS

Figure 1. Figure 2. Figure 3.

Figure 4. Figure 5. Figure 6.

Figure 7. Figure 8. Figure 9.

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