Texas Instruments TPS22967DSGR Schematic [ru]
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TPS22967 Single-Channel, Ultra-Low Resistance Load Switch
1 Features 3 Description
1
• Integrated Single-Channel Load Switch
• Input Voltage Range: 0.8 V to 5.5 V
• Low RONResistance
– RON= 22 mΩ at VIN= 5 V (V
– RON= 22 mΩ at VIN= 3.6 V (V
– RON= 22 mΩ at VIN= 1.8 V (V
BIAS
BIAS
BIAS
= 5 V)
= 5 V)
= 5 V)
• 4-A Maximum Continuous Switch Current
• Low Quiescent Current (50 µA)
• Low Control Input Threshold Enables Use of
1.2-V, 1.8-V, 2.5-V, and 3.3-V Logic
• Configurable Rise Time
• Quick Output Discharge (QOD)
• WSON 8-Pin Package With Thermal Pad
2 Applications
• Ultrabooks™
• Notebooks and Netbooks
• Tablet PCs
• Consumer Electronics
• Set-Top Boxes and Residental Gateways
• Telecom Systems
• Solid-State Drives (SSD)
The TPS22967 device is a small, ultra-low RON,
single-channel load switch with controlled turnon. The
device contains an N-channel MOSFET that can
operate over an input voltage range of 0.8 V to 5.5 V
and can support a maximum continuous current of
4 A. The switch is controlled by an on/off input (ON),
which can interface directly with low-voltage control
signals. In the TPS22967, a 225-Ω pulldown resistor
is added for quick output discharge when the switch
is turned off.
The TPS22967 is available in a small, space-saving
2-mm × 2-mm 8-pin WSON package (DSG) with
integrated thermal pad allowing for high power
dissipation. The device is characterized for operation
over the free-air temperature range of –40°C to 85°C.
PART NUMBER PACKAGE BODY SIZE (NOM)
TPS22967 WSON (8) 2.00 mm × 2.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
TPS22967
SLVSC42A –AUGUST 2013–REVISED APRIL 2015
Device Information
(1)
4 Typical Application Schematic
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS22967
SLVSC42A –AUGUST 2013–REVISED APRIL 2015
www.ti.com
Table of Contents
1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Typical Application Schematic............................. 1
5 Revision History..................................................... 2
6 Pin Configuration and Functions......................... 3
7 Specifications......................................................... 4
7.1 Absolute Maximum Ratings ...................................... 4
7.2 ESD Ratings.............................................................. 4
7.3 Recommended Operating Conditions....................... 4
7.4 Thermal Information.................................................. 5
7.5 Electrical Characteristics: V
7.6 Electrical Characteristics: V
7.7 Switching Characteristics.......................................... 7
7.8 Typical Characteristics.............................................. 8
= 5 V ...................... 5
BIAS
= 2.5 V ................... 6
BIAS
8 Detailed Description ............................................ 14
8.1 Overview................................................................. 14
8.2 Functional Block Diagram ....................................... 14
8.3 Feature Description................................................. 14
8.4 Device Functional Modes........................................ 15
9 Application and Implementation........................ 16
9.1 Application Information............................................ 16
9.2 Typical Application ................................................. 17
10 Power Supply Recommendations..................... 19
11 Layout................................................................... 19
11.1 Layout Guidelines ................................................. 19
11.2 Layout Example .................................................... 20
12 Device and Documentation Support................. 20
12.1 Trademarks........................................................... 20
12.2 Electrostatic Discharge Caution............................ 20
12.3 Glossary................................................................ 20
13 Mechanical, Packaging, and Orderable
Information........................................................... 20
5 Revision History
Changes from Original (August 2013) to Revision A Page
• Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
2 Submit Documentation Feedback Copyright © 2013–2015, Texas Instruments Incorporated
Product Folder Links: TPS22967
TOP VIEW
BOTTOM VIEW
VIN
VIN
ON
VBIAS
VIN
VIN
VBIAS
GND
VOUT
VOUT
CT
GND
VOUT
VOUT
CT
ON
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
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6 Pin Configuration and Functions
DSG Package
8-Pin WSON
Pin Functions
PIN
NAME NO.
CT 6 O
GND 5 – Device ground.
ON 3 I Active high switch control input. Do not leave floating.
VBIAS 4 I
VIN 1, 2 I
VOUT 7, 8 O Switch output.
Thermal Pad –
I/O DESCRIPTION
Switch slew rate control. Can be left floating. See Application and Implementation for more
information.
Bias voltage. Power supply to the device. Recommended voltage range for this pin is 2.5 V to 5.5 V.
See Application Information section for more information.
Switch input. Input capacitor recommended for minimizing VINdip. Recommended voltage range for
this pin for optimal RONperformance is 0.8 V to V
Thermal pad (exposed center pad) to alleviate thermal stress. Tie to GND. See Layout Example for
layout guidelines.
BIAS
TPS22967
SLVSC42A –AUGUST 2013–REVISED APRIL 2015
.
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TPS22967
SLVSC42A –AUGUST 2013–REVISED APRIL 2015
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7 Specifications
7.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)
V
V
V
V
I
MAX
I
PLS
T
T
T
T
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
(2) All voltage values are with respect to network ground terminal.
(3) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
Input voltage –0.3 6 V
IN
Output voltage –0.3 6 V
OUT
Bias voltage –0.3 6 V
BIAS
ON voltage –0.3 6 V
ON
Maximum continuous switch current 4 A
Maximum pulsed switch current, pulse <300 µs, 2% duty cycle 6 A
Operating free-air temperature
A
Maximum junction temperature 125 °C
J
Maximum lead temperature (10-s soldering time) 300 °C
LEAD
Storage temperature –65 150 °C
STG
(3)
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
have to be derated. Maximum ambient temperature [T
maximum power dissipation of the device in the application [P
in the application (θJA), as given by the following equation: TA
] is dependent on the maximum operating junction temperature [T
A(max)
D(max)
(max)
(1)(2)
MIN MAX UNIT
–40 85 °C
], the
], and the junction-to-ambient thermal resistance of the part/package
= T
J(max)
– (θJA× P
D(max)
).
J(max)
(2)
7.2 ESD Ratings
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
V
Electrostatic discharge V
(ESD)
Charged device model (CDM), per JEDEC specification JESD22-
(2)
C101
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(1)
7.3 Recommended Operating Conditions
MIN NOM MAX UNIT
V
V
V
V
V
V
C
(1) Refer to Application Information.
Input voltage 0.8 V
IN
Bias voltage 2.5 5.5 V
BIAS
ON voltage 0 5.5 V
ON
Output voltage V
OUT
High-level input voltage,
IH
ON
Low-level input voltage,
IL
ON
Input capacitor 1
IN
V
= 2.5 V to 5.5 V 1.2 5.5 V
BIAS
V
= 2.5 V to 5.5 V 0 0.5 V
BIAS
(1)
VALUE UNIT
±2000
±1000
BIAS
IN
V
V
µF
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SLVSC42A –AUGUST 2013–REVISED APRIL 2015
7.4 Thermal Information
TPS22967
THERMAL METRIC
R
θJA
R
θJC(top)
R
θJB
ψ
JT
ψ
JB
R
θJC(bot)
Junction-to-ambient thermal resistance 65.3
Junction-to-case (top) thermal resistance 74.2
Junction-to-board thermal resistance 35.4
Junction-to-top characterization parameter 2.2
Junction-to-board characterization parameter 36
Junction-to-case (bottom) thermal resistance 12.8
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(1)
DSG [WSON] UNIT
8 PINS
°C/W
7.5 Electrical Characteristics: V
BIAS
= 5 V
Unless otherwise noted, the specification in the following table applies over the operating ambient temperature –40°C ≤ T
85°C (Full) and V
POWER SUPPLIES AND CURRENTS
I
IN(VBIAS-ON)VBIAS
I
IN(VBIAS-OFF)VBIAS
I
IN(VIN-OFF)VIN
I
ON
RESISTANCE CHARACTERISTICS
R
ON
R
PD
ON pin input leakage current VON= 5.5 V Full 0.5 µA
ON-state resistance mΩ
Output pulldown resistance VIN= 5.0 V, VON= 0V, I
= 5 V. Typical values are for TA= 25°C.
BIAS
PARAMETER TEST CONDITIONS T
I
= 0,
quiescent current Full 50 75 µA
shutdown current VON= GND, V
OUT
VIN= VON= V
= 5 V
BIAS
= 0 V Full 2 µA
OUT
MIN TYP MAX UNIT
A
VIN= 5 V 0.2 8
off-state supply current Full µA
VON= GND,
V
= 0 V
OUT
VIN= 3.3 V 0.02 3
VIN= 1.8 V 0.01 2
VIN= 0.8 V 0.005 1
25°C 22 33
Full 35
25°C 22 33
Full 35
25°C 22 33
Full 35
25°C 22 33
Full 35
25°C 22 33
Full 35
25°C 22 33
Full 35
I
V
OUT
BIAS
= –200 mA,
= 5 V
VIN= 5 V
VIN= 3.3 V
VIN= 1.8 V
VIN= 1.5 V
VIN= 1.2 V
VIN= 0.8 V
= 15 mA Full 225 300 Ω
OUT
≤
A
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SLVSC42A –AUGUST 2013–REVISED APRIL 2015
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7.6 Electrical Characteristics: V
BIAS
= 2.5 V
Unless otherwise noted, the specification in the following table applies over the operating ambient temperature –40°C ≤ T
85°C (Full) and V
POWER SUPPLIES AND CURRENTS
I
IN(VBIAS-ON)VBIAS
I
IN(VBIAS-OFF)VBIAS
I
IN(VIN-OFF)VIN
I
ON
RESISTANCE CHARACTERISTICS
R
ON
R
PD
ON pin input leakage current VON= 5.5 V Full 0.5 µA
ON-state resistance VIN= 1.5 V mΩ
Output pulldown resistance VIN= 2.5 V, VON= 0 V, I
= 2.5 V. Typical values are for TA= 25°C.
BIAS
PARAMETER TEST CONDITIONS T
I
= 0,
quiescent current Full 20 30 µA
shutdown current VON= GND, V
OUT
VIN= VON= V
= 2.5 V
BIAS
= 0 V Full 2 µA
OUT
MIN TYP MAX UNIT
A
VIN= 2.5 V 0.01 3
off-state supply current Full µA
VON= GND,
V
= 0 V
OUT
VIN= 1.8 V 0.01 2
VIN= 1.2 V 0.005 2
VIN= 0.8 V 0.003 1
25°C 26 38
Full 40
25°C 26 38
Full 40
25°C 25 38
Full 40
25°C 24 38
Full 40
25°C 24 38
Full 40
I
V
OUT
BIAS
= –200 mA,
= 2.5 V
VIN= 2.5 V
VIN= 1.8 V
VIN= 1.2 V
VIN= 0.8 V
= 1 mA Full 275 325 Ω
OUT
≤
A
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+
-
OFF
ON
TPS22967
VIN
VOUT
R
L
C
L
TEST CIRCUIT
GND
(A)
GND
t
R
t
F
t
ON
t
OFF
90% 90%
10% 10%
tON/t
OFF
WAVEFORMS
(A) Rise and fall times of the control signal is 100ns.
V
ON
V
OUT
V
OUT
ON
GND
50% 50%
50% 50%
CIN= 1µF
VBIAS
CT
t
D
10%
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7.7 Switching Characteristics
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN= VON= V
t
t
t
t
t
ON
OFF
R
F
D
Turnon time 1325
Turnoff time 10
V
V
ON delay time 500
VIN= 0.8 V, VON= V
t
t
t
t
t
ON
OFF
R
F
D
Turnon time 600
Turnoff time 80
V
V
ON delay time 460
VIN= 2.5 V, VON= 5 V, V
t
t
t
t
t
ON
OFF
R
F
D
Turnon time 2200
Turnoff time 9
V
V
ON delay time 1075
VIN= 0.8 V, VON= 5 V, V
t
t
t
t
t
ON
OFF
R
F
D
Turn-on time 1450
Turn-off time 60
V
V
ON delay time 1010
= 5 V, TA= 25ºC (UNLESS OTHERWISE NOTED)
BIAS
rise time RL= 10 Ω, CL= 0.1 µF, CT= 1000 pF 1625 µs
OUT
fall time 3.5
OUT
= 5 V, TA= 25ºC (UNLESS OTHERWISE NOTED)
BIAS
rise time RL= 10 Ω, CL= 0.1 µF, CT= 1000 pF 300 µs
OUT
fall time 5.5
OUT
= 2.5 V, TA= 25ºC (UNLESS OTHERWISE NOTED)
BIAS
rise time RL= 10 Ω, CL= 0.1 µF, CT= 1000 pF 2275 µs
OUT
fall time 3.1
OUT
= 2.5 V, TA= 25ºC (UNLESS OTHERWISE NOTED)
BIAS
rise time RL= 10 Ω, CL= 0.1 µF, CT= 1000 pF 875 µs
OUT
fall time 5.5
OUT
TPS22967
SLVSC42A –AUGUST 2013–REVISED APRIL 2015
Copyright © 2013–2015, Texas Instruments Incorporated Submit Documentation Feedback 7
Figure 1. Test Circuit and Timing Waveforms
Product Folder Links: TPS22967
16
16.5
17
17.5
18
18.5
19
19.5
20
20.5
21
21.5
22
22.5
23
23.5
24
24.5
25
25.5
26
26.5
27
27.5
28
-40 -15 10 35 60 85
R
ON
(m)
Temperature (C)
VIN = 0.8V
VIN = 1.05V
VIN = 1.2V
VIN = 1.5V
VIN = 1.8V
VIN = 2.5V
VIN = 3.3V
VIN = 3.6V
VIN = 4.2V
VIN =5V
VIN = 5.5V
C002
VBIAS=5.5V, I
OUT
= -200mA
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
0.8 1.2 1.6 2 2.4
R
ON
(m)
VIN (V)
-40C
25C
85C
70C
C002
VBIAS=2.5V, I
OUT
= -200mA
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
-40 -15 10 35 60 85
R
ON
(m)
Temperature (ºC)
VIN = 0.8V
VIN = 1.05V
VIN = 1.2V
VIN = 1.5V
VIN = 1.8V
VIN =2.5V
C002
VBIAS=2.5V, I
OUT
=-200mA
TPS22967
SLVSC42A –AUGUST 2013–REVISED APRIL 2015
7.8 Typical Characteristics
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Figure 2. V
vs Quiescent Current Figure 3. V
BIAS
Figure 4. VINvs Off-State VIN Current
vs Shutdown Current
BIAS
Figure 5. Temperature vs RON(V
BIAS
= 2.5 V)
Figure 6. Temperature vs RON(V
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= 5.5 V) Figure 7. VINvs RON(V
BIAS
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BIAS
= 2.5 V)
21
22
23
24
25
26
27
0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4 4.8 5.2 5.6
R
ON
(mΩ)
VIN (V)
VBIAS = 2.5V
VBIAS = 3.3V
VBIAS = 3.6V
VBIAS = 4.2V
VBIAS = 5V
VBIAS = 5.5V
C002
Temperature=25C, I
OUT
= -200mA
15
17
19
21
23
25
27
29
31
33
0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4 4.8 5.2 5.6
R
ON
(m)
VIN (V)
-40C
25C
70C
85C
C002
VBIAS=5.5V, I
OUT
= -200mA
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Typical Characteristics (continued)
TPS22967
SLVSC42A –AUGUST 2013–REVISED APRIL 2015
Figure 8. VINvs RON(V
Figure 10. VIN vs RPD(V
= 5.5 V)
BIAS
= 5.5 V) Figure 11. VONvs V
BIAS
Figure 9. VINvs RON(TA= 25°C)
OUT(TA
= 25°C)
Figure 12. VINvs tD(V
Copyright © 2013–2015, Texas Instruments Incorporated Submit Documentation Feedback 9
= 2.5 V, CT = 1 nF) Figure 13. VINvs tD(V
BIAS
= 5.5 V, CT = 1 nF)
BIAS
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