SUPPORTS DEFENSE, AEROSPACE,
AND MEDICAL APPLICATIONS
•Controlled Baseline
•One Assembly/Test Site
•One Fabrication Site
•Available in Military (–55°C/125°C)
Temperature Range
•Extended Product Life Cycle
•Extended Product-Change Notification
•Product Traceability
SLVSAX8 – SEPTEMBER 2011
DESCRIPTION
The TPS2041B power-distribution switch is intended for applications where heavy capacitive loads and short
circuits are likely to be encountered. This device incorporates 70-mΩ N-channel MOSFET power switches for
power-distribution systems that require multiple power switches in a single package. Each switch is controlled by
a logic enable input. Gate drive is provided by an internal charge pump designed to control the power-switch rise
times and fall times to minimize current surges during switching. The charge pump requires no external
components and allows operation from supplies as low as 2.7 V.
When the output load exceeds the current-limit threshold or a short is present, the device limits the output current
to a safe level by switching into a constant-current mode, pulling the overcurrent (OC) logic output low. When
continuous heavy overloads and short circuits increase the power dissipation in the switch, causing the junction
temperature to rise, a thermal protection circuit shuts off the switch to prevent damage. Recovery from a thermal
shutdown is automatic once the device has cooled sufficiently. Internal circuitry ensures that the switch remains
off until valid input voltage is present. This power-distribution switch is designed to set current limit at 1 A (typ).
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION
T
J
–55°C toV62/11620-
125°C01XE
ENABLEPACKAGE
Active lowSingleSOT-23 – DBVTPS2041BMDBVTEPPXAM
NO. OFORDERABLETOP-SIDE
SWITCHESPART NUMBERMARKING
(2)
(1)
VID NUMBER
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
Figure 1. TPS2041B Switch at 500 mA
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted
V
I(IN)
V
O(OUT)
V
I(EN)
V
I(OC)
I
O(OUT)
θ
JC
T
J
T
stg
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operatingconditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to GND.
Input voltage range (IN)
Output voltage range (OUT)
Input voltage range (EN)–0.3 V to 6 V
Voltage range (OC)–0.3 V to 6 V
Continuous output currentInternally limited
Continuous power dissipation at 125°C182 mW
Thermal resistance, junction-to-case55°C/W
Operating virtual-junction temperature range–55°C to 135°C
Storage temperature range–65°C to 150°C
Lead temperature, soldering1,6 mm (1/16 in) from case for 10 s260°C
Electrostatic discharge (ESD) protectionMachine Model (MM) (M0)50 V
Off-state currentV
OC deglitchOC assertion or deassertion3816 ms
Thermal Shutdown
(2)
Thermal shutdown threshold135°C
Recovery from thermal shutdown125°C
Hysteresis10°C
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be accounted for separately.
(2) The thermal shutdown only reacts under overcurrent conditions.