Texas Instruments TLV2362IPWR, TLV2362IPWLE, TLV2362IPS, TLV2361CDBVR, TLV2361CDBV Datasheet
...
TLV2361, TLV2361Y, TLV2362, TLV2362Y
HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS
SLOS195B – FEBRUARY 1997 – REVISED OCTOBER 1998
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Low Supply-Voltage
Operation...V
CC
= ±1 V Min
D
Wide Bandwidth...7 MHz Typ at
V
CC
± = ±2.5 V
D
High Slew Rate...3 V/µs Typ at
V
CC
± = ±2.5 V
D
Wide Output Voltage Swing...±2.4 V Typ
at V
CC
± = ±2.5 V, RL = 10 kΩ
D
Low Noise...8 nV/√Hz Typ at f = 1 kHz
D
Package Options Include SOT-23 (DBV)
Package for the TLV2361 and Plastic
Small-Outline (D), Thin Shrink
Small-Outline (PW), and Dual-In-Line (P)
Packages for the TLV2362
description
The TLV236x devices are high-performance dual operational amplifiers built using an original Texas
Instruments bipolar process. These devices can be operated at a very low supply voltage (±1 V), while
maintaining a wide output swing. The TL V236x devices offer a dramatically improved dynamic range of signal
conditioning in low-voltage systems. The TLV236x devices also provide higher performance than other
general-purpose operational amplifiers by combining higher unity-gain bandwidth and faster slew rate. With
their low distortion and low-noise performance, these devices are well suited for audio applications.
The C-suffix devices are characterized for operation from 0°C to 70°C and the I-suffix devices are characterized
for operation from –40°C to 85°C.
TLV2361 AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
T
A
SOT-23
(DBV)
†
SYMBOL
CHIP
FORM
‡
(Y)
0°C to 70°C TLV2361CDBV VAAC TLV2361Y
–40°C to 85°C TLV2361IDBV VAAI
†
The DBV packages are only available taped and reeled.
‡
Chip forms are specified for operation at 25°C only.
TLV2362 AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
T
A
SMALL OUTLINE
§
(D)
PLASTIC DIP
(P)
TSSOP
¶
(PW)
CHIP
FORM
‡
(Y)
–20°C to 85°C TLV2362ID TLV2362IP TLV2362IPWR TLV2362Y
‡
Chip forms are specified for operation at 25°C only.
§
The D packages are available taped and reeled. Add an R to the package suffix (e.g., TL V2362IDR).
¶
The PW packages are available left-ended taped and reeled only, (e.g., TLV2362IPWR).
Copyright 1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
5
4
1
2
3
VCC+
OUT
IN+
V
CC
–
IN–
1
2
3
4
8
7
6
5
1OUT
1IN–
1IN+
V
CC
–
VCC+
2OUT
2IN–
2IN+
TLV2361. . . DBV PACKAGE
(TOP VIEW)
TLV2362. . . D, P, OR PW PACKAGE
(TOP VIEW)
TLV2361, TLV2361Y, TLV2362, TLV2362Y
HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS
SLOS195B – FEBRUARY 1997 – REVISED OCTOBER 1998
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
equivalent schematic (each amplifier)
V
CC–
IN–
IN+
V
CC+
OUT
ACTUAL DEVICE COMPONENT COUNT
COMPONENT TLV2361 TLV2362
Transistors 30 46
Resistors 6 11
Diodes 1 1
Capacitors 2 4
JFET 1 1
TLV2361, TLV2361Y, TLV2362, TLV2362Y
HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS
SLOS195B – FEBRUARY 1997 – REVISED OCTOBER 1998
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2361Y chip information
This chip, when properly assembled, has characteristics similar to the TLV2361. Thermal compression or
ultrasonic bonding can be used on the doped-aluminum bonding pads. This chip can be mounted with
conductive epoxy or a gold-silicon preform.
Bonding-Pad Assignments
Chip Thickness: 15 Mils Typical
Bonding Pads: 4 × 4 Mils Minimum
TJ(max) = 150°C
Tolerances Are ±10%.
All Dimensions Are in Mils.
Pin (2) is Connected Internally to Backside of Chip.
OUT
IN+
IN–
VCC+
VCC–
39
39
(1)
(2)
(3)
(4)
(5)
(6)
(7)(8)
(4)
(5)
(3)
(2)
(1)
+
–
(1)
(3)
(4)
(2)
(5)
TLV2361, TLV2361Y, TLV2362, TLV2362Y
HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS
SLOS195B – FEBRUARY 1997 – REVISED OCTOBER 1998
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2362Y chip information
This chip, when properly assembled, has characteristics similar to the TLV2362. Thermal compression or
ultrasonic bonding can be used on the doped-aluminum bonding pads. Chips can be mounted with conductive
epoxy or a gold-silicon preform.
Bonding-Pad Assignments
39
39
(1)
(2)
(3)
(4)
(5)
(6)
(7)(8)
1OUT
1IN+
1IN–
VCC+
VCC–
+
–
(3)
(2)
(1)
(4)
(8)
2OUT
2IN+
2IN–
+
–
(5)
(6)
(7)
Chip Thickness: 15 Mils Typical
Bonding Pads: 4 × 4 Mils Minimum
TJ(max) = 150°C
Tolerances Are ±10%.
All Dimensions Are in Mils.
Pin (4) is Connected Internally to Backside of Chip.
TLV2361, TLV2361Y, TLV2362, TLV2362Y
HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS
SLOS195B – FEBRUARY 1997 – REVISED OCTOBER 1998
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
†
Supply voltage, V
CC
+ (see Note 1) 3.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply voltage, V
CC
– (see Note 1) –3.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, V
ID
(see Note 2) ±3.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage, V
I
(any input) (see Notes 1 and 3) VCC±. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output voltage, V
O
±3.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, I
O
20 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short-circuit current at (or below) 25°C (output shorted to GND) Unlimited. . . . . . . . . . . . . . . . . . .
Package thermal impedance, θ
JA
(see Note 4): D package 197°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DBV package 347°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
P package 104°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PW package 243°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between VCC+ and VCC–.
2. Differential voltages are at IN+ with respect to IN–.
3. All input voltage values must not exceed VCC.
4. The package thermal impedance is calculated in accordance with JESD 51, except for through-hole packages, which use a trace
length of zero.
recommended operating conditions
C SUFFIX I SUFFIX
MIN MAX MIN MAX
UNIT
Supply voltage, V
CC
±1 ±2.5 ±1 ±2.5 V
Operating free-air temperature, T
A
0 70 –40 85 °C
TLV2361, TLV2361Y, TLV2362, TLV2362Y
HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS
SLOS195B – FEBRUARY 1997 – REVISED OCTOBER 1998
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2361C electrical characteristics, VCC± = ±1.5 V (unless otherwise noted)
TLV2361C
PARAMETER
TEST CONDITIONS
T
A
MIN TYP MAX
UNIT
p
25°C 1 6
VIOInput offset voltage
V
O
= 0,
V
IC
=
0
0°C to 70°C 7.5
mV
p
25°C 5 100
IIOInput offset current
V
O
=
0
,
V
IC
=
0
0°C to 70°C 150
nA
p
25°C 20 150
IIBInput bias current
V
O
=
0
,
V
IC
=
0
0°C to 70°C 250
nA
p
25°C ±0.5
VICCommon-mode input voltage
|VIO| ≤ 7.5 mV
0°C to 70°C ±0.5
V
p
p
p
RL = 10 kΩ 25°C 1.2 1.4
V
OM
+
Maximum positive-peak output voltage
RL ≥ 10 kΩ 0°C to 70°C 1.2
V
p
p
RL = 10 kΩ 25°C –1.2 –1.4
V
OM
–
Maximum negative-peak output voltage
RL ≥ 10 kΩ 0°C to 70°C –1.2
V
pp
p
25°C 1.4 2.25
ICCSupply current (package)
V
O
= 0,
No load
0°C to 70°C 2.75
mA
A
VD
Large-signal differential voltage amplification VO = ±1 V, RL = 10 kΩ 25°C 60 80 dB
CMRR Common-mode rejection ratio VIC = ±0.5 V 25°C 75 dB
k
SVR
Supply-voltage rejection ratio VCC± = ±1.5 V to ±2.5 V 25°C 80 dB
TLV2361C operating characteristics, VCC± = ±1.5 V, T
A
= 25°C
TLV2361C
PARAMETER
TEST CONDITIONS
MIN TYP MAX
UNIT
SR Slew rate AV = 1, VI = ±0.5 V 2.5 V/µs
B
1
Unity-gain bandwidth AV = 40, RL = 10 kΩ, CL = 100 pF 6 MHz
V
n
Equivalent input noise voltage RS = 100 Ω, RF = 10 kΩ, f = 1 kHz 9
nV/√Hz
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