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TIL3009, TIL3010, TIL3011, TIL3012
OPTOCOUPLERS/OPTOISOLATORS
SOES027A – DECEMBER 1987 – REVISED APRIL 1998
D
250-V Phototriac Driver Output
D
Gallium-Arsenide-Diode Infrared Source
and Optically-Coupled Silicon Triac Driver
(Bilateral Switch)
D
UL Recognized... File Number E65085
D
High Isolation... 3535 V peak
D
Output Driver Designed for 115 Vac
D
Standard 6-Pin Plastic DIP
ANODE
CATHODE
†
Do not connect this terminal
NC – No internal connection
TIL30xx PACKAGE
(TOP VIEW)
1
2
NC
3
MAIN TERM
6
TRIAC SUB
5
MAIN TERM
4
typical 115 Vac(rms) applications
D
Solenoid/Valve Controls
D
Lamp Ballasts
D
Interfacing Microprocessors to 115-Vac
Peripherals
D
Motor Controls
D
Incandescent Lamp Dimmers
logic diagram
1
2
description
Each device consists of a gallium-arsenide infrared-emitting diode optically coupled to a silicon phototriac
mounted on a 6-pin lead frame encapsulated within an electrically nonconductive plastic compound. The case
withstands soldering temperature with no deformation. Device performance characteristics remain stable when
operated in high-humidity conditions.
†
6
4
absolute maximum ratings at 25°C free-air (unless otherwise noted)
†
Input-to-output peak voltage, 5 s maximum duration, 60 Hz (see Note 1) 3.535 kV. . . . . . . . . . . . . . . . . . . . . .
Input diode reverse voltage 3 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input diode forward current, continuous 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output repetitive peak off-state voltage 250 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output on-state current, total rms value (50-60 Hz, full sine wave): T
Output driver nonrepetitive peak on-state current (t
= 10 ms, duty cycle = 10%, see Figure 7) 1.2 A. . . . . .
w
= 25° 100 mA. . . . . . . . . . . . . . . . . . . .
A
T
= 70° 50 mA. . . . . . . . . . . . . . . . . . . . .
A
Continuous power dissipation at (or below) 25°C free-air temperature:
Infrared-emitting diode (see Note 2) 100 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototriac (see Note 3) 300 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total device (see Note 4) 330 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating junction temperature range, T
Storage temperature range, T
–40°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
–40°C to 100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. Input-to-output peak voltage is the internal device dielectric breakdown rating.
2. Derate linearly to 100°C free-air temperature at the rate of 1.33 mW/°C.
3. Derate linearly to 100°C free-air temperature at the rate of 4 mW/°C.
4. Derate linearly to 100°C free-air temperature at the rate of 4.4 mW/°C.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Copyright 1998, Texas Instruments Incorporated
1
TIL3009, TIL3010, TIL3011, TIL3012
IFTInput trigger current either direction
Output suppl
oltage
V
mA
OPTOCOUPLERS/OPTOISOLATORS
SOES027A – DECEMBER 1987 – REVISED APRIL 1998
electrical characteristics 25°C free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
R
V
F
I
DRM
dv/dt Critical rate of rise of off-state voltage See Figure 1 12 V/µs
dv/dt(c) Critical rate of rise of commutating voltage IO = 15 mA, See Figure 1 0.15 V/µs
V
TM
I
H
NOTE 5: Test voltage must be applied within dv/dt rating.
Static reverse current VR = 3 V 0.05 100 µA
Static forward voltage IF = 10 mA 1.2 1.5 V
Repetitive off-state current, either direction V
TIL3009 15 30
p
Peak on-state voltage, either direction ITM = 100 mA 1.8 3 V
Holding current, either direction 100 µA
TIL3010
TIL301 1
TIL3012 5
= 250 V, See Note 5 10 100 nA
DRM
p
pp
y v
= 3
8 15
5 10
PARAMETER MEASUREMENT INFORMATION
V
CC
1
2
Input
(see Note A)
NOTE A. The critical rate of rise of off-state voltage, dv/dt, is measured with the input set at 0 volts. The frequency of Vin is increased
until the phototriac turns on. This frequency is then used to calculate the dv/dt according to the following formula:
dvńdt+22
The critical rate of rise of commutating voltage, dv/dt(c), is measured by applying occasional 5-volt pulses to the input and
increasing the frequency of Vin until the phototriac remains on (latches) after the input pulse has ceased. With no further input
pulses, the frequency of Vin is then gradually decreased until the phototriac turns off. The frequency at which turn-off occurs
can then be used to calculate the dv/dt(c) according to the formula shown above.
Ǹ
p
fV
in
10 kΩ
2N3904
6
Vin = 30 V rms
R
L
4
Figure 1. Critical Rate of Rise Test Circuit
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
EMITTING DIODE TRIGGER CURRENT (NORMALIZED)
vs
FREE-AIR TEMPERATURE
1.4
1.3
1.2
800
Output tw = 80 µs
IF = 20 mA
600
f = 60 Hz
TA = 25°C
400
200
TIL3009, TIL3010, TIL3011, TIL3012
OPTOCOUPLERS/OPTOISOLATORS
SOES027A – DECEMBER 1987 – REVISED APRIL 1998
ON-STATE CHARACTERISTICS
1.1
1
0.9
Emitting Diode Trigger Current (Normalized)
0.8
–50 –25 0 25 50 75 100
TA – Free-Air Temperature – ° C
Figure 2
CRITICAL RATE OF RISE OF OUTPUT VOLTAGE
OFF-STATE dv/dt AND COMMUTATING dv/dt(c)
14 0.24
TA = 25°C
13
See Figure 1
12
sµ
11
10
0
–200
– Peak On-State Current – mA
–400
TM
I
–600
–800
–3 –2 –1 0 1 2 3
vs
LOAD RESISTANCE
Off-State
VTM – Peak On-State Voltage – V
Figure 3
0.22
0.20
sµ
0.18
0.16
9
8
Off-State dv/dt – V/
7
6
5
4
0 0.4 0.8 1.2
Commutating
RL – Load Resistance – kΩ
Figure 4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
dv/dt
dv/dt(c)
1.6 2
0.14
0.12
0.10
Commutating dv/dt(c) – V/
0.08
0.06
0.04
3
TIL3009, TIL3010, TIL3011, TIL3012
OPTOCOUPLERS/OPTOISOLATORS
SOES027A – DECEMBER 1987 – REVISED APRIL 1998
TYPICAL CHARACTERISTICS
OFF-STATE dv/dt AND COMMUTATING dv/dt
12
10
sµ
8
vs
FREE-AIR TEMPERATURE
dv/dt
dv/dt(c)
See Figure 1
0.24
0.2
sµ
0.16
1000
400
100
RMS APPLIED VOLTAGE
(FOR dv/dt(c) = 0.15 V/µs)
FREQUENCY
RL = 1 kΩ
TA = 25°C
dv/dt = 2√2πf V
See Figure 1
in
6
4
Off-State dv/dt – V/
RL = 510 Ω
2
0
25 50
vs
RL = 2 kΩ
75 100
TA – Free-Air Temperature – ° C
Figure 5
NONREPETITIVE PEAK ON-STATE CURRENT
3
TA = 25°C
2
0.12
0.08
Commutating dv/dt – V/
0.04
0
vs
PULSE DURATION
– RMS Applied Voltage – V
in
V
4
40
dv/dt = 0.15 V/µs
10
4
1
100 400 1 k 4 k 10 k 40 k 100 k
f – Frequency – Hz
Figure 6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
1
– Nonrepetitive Peak On-State Current – mA
TSM
I
0
0.01 0.1 1
tw – Pulse Duration – ms
Figure 7
10 100
TIL3009, TIL3010, TIL3011, TIL3012
OPTOCOUPLERS/OPTOISOLATORS
SOES027A – DECEMBER 1987 – REVISED APRIL 1998
APPLICATION INFORMATION
R
R
in
V
CC
TIL3009, TIL3012
1
2
180 Ω
6
R
L
4
Figure 8. Resistive Load
R
in
V
CC
TIL3009, TIL3012
1
180 Ω
6
L
120 V, 60 Hz
2.4 kΩ
Z
L
0.1 µF
2
4
IGT ≤ 15 mA
Figure 9. Inductive Load With Sensitive-Gate Traic
R
in
V
CC
TIL3009, TIL3012
1
2
180 Ω
6
0.2 µF
4
15 mA < IGT < 50 mA
1.2 kΩ
Figure 10. Inductive Load With Nonsensitive-Gate Triac
120 V, 60 Hz
Z
L
120 V, 60 Hz
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
5
TIL3009, TIL3010, TIL3011, TIL3012
OPTOCOUPLERS/OPTOISOLATORS
SOES027A – DECEMBER 1987 – REVISED APRIL 1998
MECHANICAL INFORMATION
C
L
105°
90
°
0,25 (0.010) NOM
C
L
7,62 (0.300) T.P.
(see Note A)
6,61 (0.260)
6,09 (0.240)
Seating Plane
0°–15°
3,81(0.150)
3,17 (0.125)
9,40 (0.370)
8,38 (0.330)
Index Dot
(see Note B)
5,46 (0.215)
2,92 (0.115)
1,78 (0.070)
0,51 (0.020)
2,29 (0.090)
1,27 (0.050)
4 Places
2,54 (0.100) T.P.
(see Note A)
6 5 4
1
2 3
1,78 (0.070) MAX
6 Places
1,01 (0.040) MIN
0,534 (0.021)
0,381 (0.015)
6 Places
NOTES: A. Leads are within 0,13 mm (0.005 inch) radius of true position (T.P.) with maximum material condition and unit installed.
B. Pin 1 identified by index dot.
C. The dimensions given fall within JEDEC MO-001 AM dimensions.
D. All linear dimensions are given in millimeters and parenthetically given in inches.
Figure 11. Packaging Specifications
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
IMPORTANT NOTICE
T exas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty . Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERT AIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICA TIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERST OOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1998, Texas Instruments Incorporated
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