Texas Instruments THS4082IDR, THS4082IDGNR, THS4082ID, THS4082IDGN, THS4082CDR Datasheet
THS4081, THS4082
175-MHz LOW-POWER HIGH-SPEED AMPLIFIERS
SLOS274C – DECEMBER 1999 – REVISED MA Y 2000
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Ultralow 3.4 mA Per Channel Quiescent
Current
D
High Speed
– 175 MHz Bandwidth (–3 dB, G = 1)
– 230 V/µs Slew Rate
– 43 ns Settling Time (0.1%)
D
High Output Drive, IO = 85 mA (typ)
D
Excellent Video Performance
– 35 MHz Bandwidth (0.1 dB, G = 1)
– 0.01% Differential Gain
– 0.05° Differential Phase
D
Very Low Distortion
– THD = –64 dBc (f = 1 MHz, RL = 150 Ω)
– THD = –79 dBc (f = 1 MHz, RL = 1 kΩ)
D
Wide Range of Power Supplies
– V
CC
= ±5 V to ±15 V
D
Available in Standard SOIC or MSOP
PowerPAD Package
D
Evaluation Module Available
description
The THS4081 and THS4082 are ultralow-power,
high-speed voltage feedback amplifiers that are
ideal for communication and video applications.
These amplifiers operate off of a very low 3.4-mA
quiescent current per channel and have a high
output drive capability of 85 mA. The signal-amplifier THS4081 and the dual-amplifier THS4082
offer very good ac performance with 175-MHz
bandwidth, 230-V/µs slew rate, and 43-ns settling
time (0.1%). With total harmonic distortion (THD)
of –64 dBc at f = 1 MHz, the THS4081 and
THS4082 are ideally suited for applications
requiring low distortion.
RELATED DEVICES
DEVICE DESCRIPTION
THS4011/2
THS4031/2
THS4051/2
290-MHz Low Distortion High-Speed Amplifiers
100-MHz Low Noise High Speed-Amplifiers
70-MHz High-Speed Amplifiers
PowerPAD is a trademark of Texas Instruments.
Copyright 2000, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NC – No internal connection
Cross Section View Showing
PowerPAD Option (DGN)
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
5 7 9 11 13 15
TA=85°C
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
± VCC - Supply Voltage - V
I
CC
– Supply Current – mA
TA=–40°C
TA=25°C
1
2
3
4
8
7
6
5
NC
IN–
IN+
V
CC–
NC
V
CC
+
OUT
NC
THS4081
D OR DGN PACKAGE
(TOP VIEW)
1
2
3
4
8
7
6
5
1OUT
1IN–
1IN+
V
CC–
VCC+
2OUT
2IN–
2IN+
THS4082
D OR DGN PACKAGE
(TOP VIEW)
CAUTION: The THS4081 and THS4082 provide ESD protection circuitry. However , permanent damage can still occur if this device
is subjected to high-energy electrostatic discharges. Proper ESD precautions are recommended to avoid any performance
degradation or loss of functionality.
THS4081, THS4082
175-MHz LOW-POWER HIGH-SPEED AMPLIFIERS
SLOS274C – DECEMBER 1999 – REVISED MA Y 2000
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
AVAILABLE OPTIONS
PACKAGED DEVICES
T
A
NUMBER OF
CHANNELS
PLASTIC
SMALL OUTLINE
†
(D)
PLASTIC
MSOP
†
(DGN)
MSOP
SYMBOL
EVALUATION
MODULE
°
°
1 THS4081CD THS4081CDGN AEO THS4081EVM
0°C to 70°C
2 THS4082CD THS4082CDGN AER THS4082EVM
°
°
1 THS4081ID THS4081IDGN AEQ —
–
40°C to 85°C
2 THS4082ID THS4082IDGN AEP —
†
The D and DGN packages are available taped and reeled. Add an R suffix to the device type (i.e., THS4081CDGN).
functional block diagram
OUT
6
IN–
IN+
2
3
Figure 1. THS4081 – Single Channel
1OUT
1IN–
1IN+
V
CC
2OUT
2IN–
2IN+
–V
CC
Figure 2. THS4082 – Dual Channel
THS4081, THS4082
175-MHz LOW-POWER HIGH-SPEED AMPLIFIERS
SLOS274C – DECEMBER 1999 – REVISED MA Y 2000
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
†
Supply voltage, VCC ±16.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage, VI ±V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, IO 150 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, V
IO
±4 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum junction temperature, TJ 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature, TA: C-suffix 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I-suffix –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature, T
stg
–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 300°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
DISSIPATION RATING TABLE
θ
θ
T
= 25°C
PACKAGE
JA
(°C/W)
JC
(°C/W)
A
POWER RATING
D 167
‡
38.3 740 mW
DGN
§
58.4 4.7 2.14 W
‡
This data was taken using the JEDEC standard Low-K test PCB. For the JEDEC Proposed
High-K test PCB, the θJA is 95°C/W with a power rating at TA = 25°C of 1.32 W.
§
This data was taken using 2 oz. trace and copper pad that is soldered directly to a 3 in. × 3 in.
PC. For further information, refer to
Application Information
section of this data sheet.
recommended operating conditions
MIN NOM MAX UNIT
pp
Dual supply ±5 ±15
Suppl
y v
oltage, V
CC+
and V
CC–
Single supply 10 30
V
p
p
C-suffix 0 70
°
Operating free-air temperature, T
A
I-suffix –40 85
°C
THS4081, THS4082
175-MHz LOW-POWER HIGH-SPEED AMPLIFIERS
SLOS274C – DECEMBER 1999 – REVISED MA Y 2000
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at TA = 25°C, VCC = ±15 V, RL = 150 Ω (unless otherwise noted)
dynamic performance
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VCC = ±15 V
175
VCC = ±5 V
Gain
=
1
160
MH
z
Small-signal bandwidth (–3 dB)
VCC = ±15 V
70
VCC = ±5 V
Gain
= –
1
65
MHzBW
VCC = ±15 V
35
Bandwidth for 0.1 dB flatness
VCC = ±5 V
Gain
=
1
35
MH
z
p
V
O(pp)
= 20 V, VCC = ±15 V 2.7
Full power bandwidth
†
V
O(pp)
= 5 V, VCC = ±5 V 7.1
MH
z
VCC = ±15 V, 20-V step, Gain = 5 230
SR
Slew rate
‡
VCC = ±5 V, 5-V step Gain = 1 170
V/µs
VCC = ±15 V, 5-V step
43
Settling time to 0.1%
VCC = ±5 V, 2-V step
Gain
= –
1
30
ns
t
s
VCC = ±15 V, 5-V step
233
Settling time to 0.01%
VCC = ±5 V, 2-V step
Gain
= –
1
280
ns
†
Slew rate is measured from an output level range of 25% to 75%.
‡
Full power bandwidth = slew rate/2π V
O(Peak)
.
noise/distortion performance
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
RL = 150 Ω –64
Vpp = 2 V,
V
CC
=
±15 V
RL = 1 kΩ –79
THD
Total harmonic distortion
O( )
,
f = 1 MHz, Gain = 2
RL = 150 Ω –64
dBc
V
CC
= ±5
V
RL = 1 kΩ –77
V
n
Input voltage noise VCC = ±5 V or ±15 V, f = 10 kHz 10 nV/√Hz
I
n
Input current noise VCC = ±5 V or ±15 V, f = 10 kHz 0.7 pA/√Hz
Gain = 2, NTSC,
VCC = ±15 V 0.01%
Differential gain error
,
40 IRE modulation,,±100 IRE ramp
VCC = ±5 V
0.01%
p
Gain = 2, NTSC,
VCC = ±15 V 0.05°
Differential phase error
,
40 IRE modulation,,±100 IRE ramp
VCC = ±5 V
0.05°
X
T
Channel-to-channel crosstalk
(THS4082 only)
VCC = ±5 V or ±15 V, f = 1 MHz –75 dB
THS4081, THS4082
175-MHz LOW-POWER HIGH-SPEED AMPLIFIERS
SLOS274C – DECEMBER 1999 – REVISED MA Y 2000
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at TA = 25°C, VCC = ±15 V , RL = 150 Ω (unless otherwise noted) (continued)
dc performance
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TA = 25°C 10 19
p
p
V
CC
=
±15 V
,
V
O
=
±10 V
,
R
L
= 1
kΩ
TA = full range
†
9
V/mV
Open loop gain
TA = 25°C 8 16
V
CC
= ±5 V,
V
O
= ±2.5 V,
R
L
=
250 Ω
TA = full range
†
7
V/mV
p
TA = 25°C 1 7
VOSInput offset voltage
TA = full range
†
8
mV
Offset voltage drift TA = full range
†
15 µV/°C
p
VCC = ±5 V or ±15 V
TA = 25°C 1.2 6
IIBInput bias current
TA = full range
†
8
µ
A
p
TA = 25°C 20 250
IOSInput offset current
TA = full range
†
400
nA
Offset current drift TA = full range
†
0.3 nA/°C
†
Full range = 0°C to 70°C for C suffix and –40°C to 85°C for I suffix
input characteristics
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
p
VCC = ±15 V ±13.8 ±14.1
V
ICR
Common mode input voltage range
VCC = ±5 V ±3.8 ±3.9
V
VCC = ±15 V, V
ICR
= ±12 V, TA = full range
†
84 93 dB
CMRR
Common mode rejection ratio
VCC = ±5 V, V
ICR
= ±2 V, TA = full range
†
78 90 dB
R
I
Input resistance 1 MΩ
C
I
Input capacitance 1.5 pF
†
Full range = 0°C to 70°C for C suffix and –40°C to 85°C for I suffix
output characteristics
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VCC = ±15 V RL = 250 Ω ±12 ±13.6
p
VCC = ±5 V RL = 150 Ω ±3.4 ±3.8
V
VOOutput voltage swing
VCC = ±15 V
±13.5 ±13.8
VCC = ±5 V
R
L
=
1 kΩ
±3.5 ±3.9
V
VCC = ±15 V
65 85
I
O
Output
curren
t
VCC = ±5 V
R
L
= 20
Ω
50 70
mA
I
SC
Short-circuit current
‡
VCC = ±15 V 100 mA
R
O
Output resistance Open loop 13 Ω
‡
Observe power dissipation ratings to keep the junction temperature below the absolute maximum rating when the output is heavily loaded or
shorted. See the absolute maximum ratings section of this data sheet for more information.
THS4081, THS4082
175-MHz LOW-POWER HIGH-SPEED AMPLIFIERS
SLOS274C – DECEMBER 1999 – REVISED MA Y 2000
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at TA = 25°C, VCC = ±15 V , RL = 150 Ω (unless otherwise noted) (continued)
power supply
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
pp
p
Dual supply ±4.5 ±16.5
VCCSuppl
y v
oltage operating range
Single supply 9 33
V
TA = 25°C 3.4 4.2
pp
p
p
V
CC
=
±15 V
TA = full range
†
5
ICCSupply current (per amplifier)
TA = 25°C 2.9 3.7
mA
V
CC
= ±5
V
TA = full range
†
4.5
PSRR Power supply rejection ratio VCC = ±5 V or ±15 V TA = full range
†
79 90 dB
†
Full range = 0°C to 70°C for C suffix and –40°C to 85°C for I suffix
THS4081, THS4082
175-MHz LOW-POWER HIGH-SPEED AMPLIFIERS
SLOS274C – DECEMBER 1999 – REVISED MA Y 2000
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 3
–20.00
0.00
20.00
40.00
60.00
80.00
100.00
OPEN LOOP GAIN
& PHASE RESPONSE
vs
FREQUENCY
f – Frequency – Hz
100 1k 1G1M 10M
Phase
100M100k10k
Open Loop Gain – dB
VCC = ±5 V and ±15 V
Gain
45°
0°
–45°
90°
135°
180°
–225°
Phase Responce
Figure 4
–80
–60
–40
–20
0
20
CROSSTALK
vs
FREQUENCY
VCC = ±15 V
Gain = 1
RF = 0 Ω
RL = 150 Ω
f – Frequency – Hz
100k 1M 1G10M 100M
Crosstalk – dB
Figure 5
–100
–90
–80
–70
–60
–50
–40
10.00 100.00 1000.00
TOTAL HARMONIC DISTORTION
vs
FREQUENCY
f - Frequency - Hz
10M100k 1M
THD - Total Harmonic Distortion - dBc
VCC = ± 15 V
Gain = 2
V
O(PP)
= 2 V
RL = 150 Ω
RL = 1 kΩ
Figure 6
–100
–90
–80
–70
–60
–50
–40
10.00 100.00 1000.00
TOTAL HARMONIC DISTORTION
vs
FREQUENCY
f - Frequency - Hz
10M100k 1M
THD - Total Harmonic Distortion - dBc
VCC = ± 5 V
Gain = 2
V
O(PP)
= 2 V
RL = 150 Ω
RL = 1 kΩ
Figure 7
10
50
90
130
170
210
250
290
330
2345
SETTLING
vs
OUTPUT STEP
VCC = ±5 V(0.01%)
VO – Output Step Voltage – V
Settling Time – ns
VCC = ±15 V(0.01%)
VCC = ±5 V(0.1%)
VCC = ±15 V(0.1%)
Figure 8
–100
–80
–60
–40
–20
0
POWER SUPPLY REJECTION
RATIO
vs
FREQUENCY
f - Frequency - Hz
PSRR - Power Supply Rejection Ratio - dB
VCC = ± 15 V & ± 5 V
100M10M100k 1M
–V
CC
+V
CC
Figure 9
–100
–90
–80
–70
–60
–50
0 5 10 15 20
DISTORTION
vs
OUTPUT VOLTAGE
VO – Output Voltage – V
Distortion – dBc
VCC = ± 15 V
RL = 1 kΩ
Gain = 5
f = 1 MHz
2nd Harmonic
3rd Harmonic
Figure 10
–100
–90
–80
–70
–60
–50
0 5 10 15 20
DISTORTION
vs
OUTPUT VOLTAGE
VO – Output Voltage – V
Distortion – dBc
VCC = ± 15 V
RL = 150 Ω
Gain = 5
f = 1 MHz
2nd Harmonic
3rd Harmonic
THS4081, THS4082
175-MHz LOW-POWER HIGH-SPEED AMPLIFIERS
SLOS274C – DECEMBER 1999 – REVISED MA Y 2000
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 11
–100
–90
–80
–70
–60
–50
10.00 100.00 1000.00
DISTORTION
vs
FREQUENCY
f – Frequency – Hz
Distortion – dBc
100k 1M 10M
2nd Harmonic
3rd Harmonic
VCC = ± 15 V
RL = 1 kΩ
Gain = 2
V
O(PP)
= 2 V
Figure 12
–100
–90
–80
–70
–60
–50
10.00 100.00 1000.00
DISTORTION
vs
FREQUENCY
f – Frequency – Hz
Distortion – dBc
100k 1M 10M
2nd Harmonic
3rd Harmonic
VCC = ± 5 V
RL = 1 kΩ
Gain = 2
V
O(PP)
= 2 V
Figure 13
–100
–90
–80
–70
–60
–50
10.00 100.00 1000.00
DISTORTION
vs
FREQUENCY
f – Frequency – Hz
Distortion – dBc
100k 1M 10M
2nd Harmonic
3rd Harmonic
VCC = ± 15 V
RL = 150 Ω
Gain = 2
V
O(PP)
= 2 V
Figure 14
–100
–90
–80
–70
–60
–50
10.00 100.00 1000.00
DISTORTION
vs
FREQUENCY
f – Frequency – Hz
Distortion – dBc
100k 1M 10M
2nd Harmonic
3rd Harmonic
VCC = ± 5 V
RL = 150 Ω
Gain = 2
V
O(PP)
= 2 V
Figure 15
OUTPUT AMPLITUDE
vs
FREQUENCY
f - Frequency - Hz
Output Amplitude – dB
–6
–4
–2
0
2
4
10.00 100.00 1000.00 10000.00 100000.00
1G10M100k 1M 100M
RF = 51 Ω
RF = 130 Ω
VCC = ± 15 V
Gain = 1
RL = 150 Ω
V
O(PP)
= 63 mV
RF = 0 Ω
Figure 16
OUTPUT AMPLITUDE
vs
FREQUENCY
f - Frequency - Hz
Output Amplitude – dB
–6
–4
–2
0
2
4
10.00 100.00 1000.00 10000.00 100000.00
1G10M100k 1M 100M
RF = 51 Ω
RF = 130 Ω
VCC = ± 5 V
Gain = 1
RL = 150 Ω
V
O(PP)
= 63 mV
RF = 0 Ω
Figure 17
OUTPUT AMPLITUDE
vs
FREQUENCY
f - Frequency - Hz
Output Amplitude – dB
–8
–6
–4
–2
0
2
10.00 100.00 1000.00 10000.00 100000.00
1G10M100k 1M 100M
RF = 51 Ω
VCC = ± 15 V
Gain = 1
RL = 1 kΩ
V
O(PP)
= 63 mV
RF = 0 Ω
Figure 18
OUTPUT AMPLITUDE
vs
FREQUENCY
f - Frequency - Hz
Output Amplitude – dB
–8
–6
–4
–2
0
2
10.00 100.00 1000.00 10000.00 100000.00
1G10M100k 1M 100M
RF = 51 Ω
VCC = ± 5 V
Gain = 1
RL = 1 kΩ
V
O(PP)
= 63 mV
RF = 0 Ω
Figure 19
OUTPUT AMPLITUDE
vs
FREQUENCY
f - Frequency - Hz
Output Amplitude – dB
–8
–6
–4
–2
0
2
10.00 100.00 1000.00 10000.00 100000.00
1G10M100k 1M 100M
RF = 1 kΩ
RF = 1.3 kΩ
VCC = ± 15 V
Gain = –1
RL = 150 Ω
V
O(PP)
= 63 mV
RF = 2 kΩ
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