D
DVideo Distribution
DMotor Drivers
DPiezo Drivers
DESCRIPTION
The THS3112/5 are low-noise, high-speed current
feedback amplifiers, ideal for any application requiring
high output current. The low noninverting current noise
of 2.9 pA/√Hz
pA/√Hz
signal resolution. The THS3112/5 can operate from
±5-V to ±15-V supply voltages, while drawing as little as
4.5 mA of supply current per channel. It offers low
–78-dBc total harmonic distortion driving 2 V
100-Ω load. The THS3115 features a low power
shutdown mode, consuming only 300-µA shutdown
quiescent current per channel. The THS3112/5 is
packaged in a standard SOIC, SOIC PowerP AD, and
TSSOP PowerPAD packages.
and the low inverting current noise of 10.8
increase signal to noise ratios for enhanced
into a
PP
VOLTAGE NOISE AND CURRENT NOISE
100
Hz
Hz
nV/
pA/
10
– Voltage Noise –
– Current Noise –
n
I
V
PowerPAD is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
V
n
n
1
10
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
vs
FREQUENCY
VCC = ±5 V to ±15 V
TA = 25°C
I
n–
I
n+
100
1 K
f – Frequency – Hz
10 K
100 K
THS3112
SOIC (D) AND
SOIC PowerPAD
(TOP VIEW)
1 OUT
1 IN–
1 IN+
V
CC–
1
2
3
4
www.ti.com
(DDA) PACKAGE
V
8
7
6
5
CC+
2 OUT
2 IN–
2 IN+
THS3115
1 OUT
1 IN–
1 IN+
V
CC–
N/C
GND
N/C
SOIC (D) AND
(TOP VIEW)
1
14
2
13
3
12
4
11
5
10
6
7
9
8
V
CC+
2 OUT
2 IN–
2 IN+
N/C
SHUTDOWN
N/C
TSSOP PowerPAD (PWP) PACKAGE
Copyright 2001, Texas Instruments Incorporated
1
THS3112
THS3112EVM
THS3115
SLOS385 – SEPTEMBER 2001
T
A
0°C to 70°CTHS3112CDTHS3112CDDATHS3115CDTHS3115CPWP
–40°C to 85°CTHS3112IDTHS3112IDDATHS3115IDTHS3115IPWP
SOIC-8
(D)
AVAILABLE OPTIONS
PACKAGED DEVICE
SOIC-8 PowerPAD
(DDA)
SOIC-14
(D)
TSSOP-14
(PWP)
EVALUATION
MODULES
THS3112EVM
THS3115EVM
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds300°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: The THS3112 and THS31 15 may incorporate a PowerP AD on the underside of the chip. This acts as a heatsink and must be connected
to a thermally dissipating plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature
which could permanently damage the device. See TI Technical Brief SLMA002 for more information about utilizing the PowerPAD
thermally enhanced package.
DISSIPATION RATING TABLE
PACKAGE
D-895°C/W
DDA67°C/W1.87 W
D-1466.6°C/W
PWP37.5°C/W3.3 W
‡
This data was taken using the JEDEC proposed high-K test PCB.
For the JEDEC low-K test PCB, the θJA is168°C/W for the D-8
package and 122.3°C/W for the D-14 package.
θ
JA
‡
‡
TA = 25°C
POWER RATING
1.32 W
1.88 W
recommended operating conditions
Supply voltage, V
Operating free-air temperature, T
Shutdown pin input levels, relative to the GND pin
2
CC+
to V
CC–
MINNOMMAXUNIT
Dual supply±5±15
Single supply1030
A
C-suffix070
I-suffix–4085
High level (device shutdown)2
Low level (device active)0.8
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V
°C
V
R
F
kΩ,
R
F
750 Ω,
R
F
750 Ω,
SR
Slew rate (see Note 2), G8
R
680 Ω
V/µs
G 2,R
F
680 Ω,
G 2,R
F
680 Ω,
G = 2
f = 1 MHz
G
R
150 Ω
40 IRE modulation
THS3112
THS3115
SLOS385 – SEPTEMBER 2001
electrical characteristics over recommended operating free-air temperature range, TA = 25°C,
NOTE 3: Disable/enable time is defined as the time from when the shutdown signal is applied to the SHDN pin to when the supply current has
Shutdown quiescent current (per channel)V
Disable time (see Note 3)VCC = ±15 V0.1µs
Enable time (see Note 3)VCC = ±15 V0.4µs
Shutdown pin input bias current for power upVCC = ±5 V, ±15 V, V
Shutdown pin input bias current for power downVCC = ±5 V, ±15 V, V
reached half of its final value.
= 0 V, VCC = ±5 V, ±15 V0.30.45mA
GND
TA = 25°C4.45.5
TA = full range6
TA = 25°C4.96.5
TA = full range7.5
TA = 25°C5360
TA = full range50
TA = 25°C6874
TA = full range66
= 0 V1825µA
(SHDN)
= 3.3 V110130µA
(SHDN)
mA
dB
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
Small signal closed loop gainvs Frequency1 – 11, 13, 14
Gain and phasevs Frequency12
Small signal closed loop noninverting gainvs Frequency15, 16
Small signal closed loop inverting gainvs Frequency17, 18
Small and large signal outputvs Frequency19, 20
Input offset voltage
Input bias currentvs Free-air temperature33
Output voltagevs Output current34, 35
Output voltage headroomvs Output current36
Supply current (per channel)vs Supply voltage37
Shutdown response38
vs Frequency21, 22
vs Peak–to–peak output voltage
vs Free-air temperature31
vs Common-mode input voltage
23, 24
32
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5
THS3112
THS3115
SLOS385 – SEPTEMBER 2001
TYPICAL CHARACTERISTICS
SMALL SIGNAL CLOSED LOOP GAIN
vs
3
0
–3
–6
–9
–12
Small Signal Closed Loop Gain – dB
–15
0.11101001000
FREQUENCY
RF = 750 Ω
RF = 1.2 kΩ
G = –1,
VCC = ±5 V,
RL = 100 Ω
f – Frequency – MHz
RF = 560 Ω
Figure 1
SMALL SIGNAL CLOSED LOOP GAIN
vs
FREQUENCY
RF = 560 Ω
RF = 750 Ω
G = –4,
VCC = ±5 V,
RL = 100 Ω
1
f – Frequency – MHz
RF = 430 Ω
101001000
Small Signal Closed Loop Gain – dB
15
12
9
6
3
0
–3
0.1
SMALL SIGNAL CLOSED LOOP GAIN
vs
3
0
–3
–6
–9
–12
Small Signal Closed Loop Gain – dB
–15
0.11101001000
FREQUENCY
RF = 750 Ω
RF = 1.2 kΩ
G = –1,
VCC = ±15 V,
RL = 100 Ω
f – Frequency – MHz
RF = 560 Ω
Figure 2
SMALL SIGNAL CLOSED LOOP GAIN
vs
21
18
15
12
9
6
3
Small Signal Closed Loop Gain – dB
0
0.11101001000
FREQUENCY
RF = 430 Ω
RF = 750 Ω
G = –8,
VCC = ±5 V,
RL = 100 Ω
f – Frequency – MHz
RF = 200 Ω
SMALL SIGNAL CLOSED LOOP GAIN
vs
15
12
9
6
3
0
Small Signal Closed Loop Gain – dB
–3
0.11101001000
FREQUENCY
RF = 560 Ω
RF = 750 Ω
G = –4,
VCC = ±15 V,
RL = 100 Ω
f – Frequency – MHz
RF = 430 Ω
Figure 3
SMALL SIGNAL CLOSED LOOP GAIN
vs
21
18
15
12
9
6
3
Small Signal Closed Loop Gain – dB
0
0.11101001000
FREQUENCY
RF = 750 Ω
G = –8,
VCC = ±15 V,
RL = 100 Ω
f – Frequency – MHz
RF = 200 Ω
RF = 430 Ω
Figure 4
SMALL SIGNAL CLOSED LOOP GAIN
vs
FREQUENCY
Small Signal Closed Loop Gain – dB
2
1
0
–1
–2
–3
–4
–5
–6
0.11
G = 1,
VCC = ±5 V,
RL = 100 Ω
RF = 750 Ω
RF = 1.1 kΩ
RF = 1 kΩ
10
f – Frequency – MHz
Figure 7
6
1001000
Figure 5
SMALL SIGNAL CLOSED LOOP GAIN
vs
FREQUENCY
3
0
–3
–6
G = 1,
VCC = ±15 V,
–9
RL = 100 Ω
Small Signal Closed Loop Gain – dB
–12
0.11101001000
RF = 750 Ω
RF = 910 Ω
RF = 1.1 kΩ
f – Frequency – MHz
Figure 8
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Figure 6
SMALL SIGNAL CLOSED LOOP GAIN
vs
FREQUENCY
RF = 1 kΩ
RF = 750 Ω
G = 2,
VCC = ±5 V,
RL = 100 Ω
1
f – Frequency – MHz
RF = 560 Ω
10
100
Small Signal Closed Loop Gain – dB
8
7
6
5
4
3
2
1
0
0.1
Figure 9
1000
THS3112
THS3115
SLOS385 – SEPTEMBER 2001
TYPICAL CHARACTERISTICS
SMALL SIGNAL CLOSED LOOP GAIN
vs
FREQUENCY
RF = 1 kΩ
G = 2,
VCC = ±15 V,
RL = 100 Ω
1
f – Frequency – MHz
RF = 560 Ω
RF = 750 Ω
101001000
Small Signal Closed Loop Gain – dB
9
6
3
0
–3
–6
–9
0.1
Figure 10
SMALL SIGNAL CLOSED LOOP GAIN
vs
FREQUENCY
Small Signal Closed Loop Gain – dB
21
18
15
12
9
6
3
0
0.1
RF = 430 Ω
RF = 750 Ω
G = 8,
VCC = ±5 V,
RL = 100 Ω
1
f – Frequency – MHz
10
RF = 200 Ω
1001000
Figure 13
SMALL SIGNAL CLOSED LOOP GAIN
vs
15
12
9
6
3
0
Small Signal Closed Loop Gain – dB
–3
0.11101001000
FREQUENCY
RF = 560 Ω
RF = 750 Ω
G = 4,
VCC = ±15 V,
RL = 100 Ω
f – Frequency – MHz
RF = 430 Ω
RF = 1 kΩ
Figure 11
SMALL SIGNAL CLOSED LOOP GAIN
vs
21
18
15
12
9
6
3
Small Signal Closed Loop Gain – dB
0
0.11101001000
FREQUENCY
RF = 750 Ω
RF = 430 Ω
G = 8,
VCC = ±15 V,
RL = 100 Ω
f – Frequency – MHz
RF = 200 Ω
Figure 14
GAIN AND PHASE
vs
FREQUENCY
RF = 560 Ω
RF = 750 Ω
G = 4,
VCC = ±15 V,
RL = 100 Ω
1
f – Frequency – MHz
RF = 430 Ω
RF = 1 kΩ
10
Gain and Phase – dB
15
12
9
6
3
0
–3
0.1
Figure 12
SMALL SIGNAL CLOSED LOOP
NONINVERTING GAIN
vs
RF = 560 Ω
RF = 750 Ω
RF = 1 kΩ
VCC = ±5 V,
RL = 100 Ω
f – Frequency – MHz
FREQUENCY
RF = 250 Ω
20
15
10
5
0
–5
–10
–15
101001000
Small Signal Closed Loop Non Inverting Gain – dB
Figure 15
1001000
SMALL SIGNAL CLOSED LOOP
NONINVERTING GAIN
vs
RF = 430 Ω
RF = 750 Ω
RF = 1 kΩ
VCC = ±5 V,
RL = 100 Ω
f – Frequency – MHz
FREQUENCY
RF = 200 Ω
21
18
15
12
9
6
3
0
–3
–6
–9
–12
–15
101001000
Small Signal Closed Loop Non Inverting Gain – dB
Figure 16
SMALL SIGNAL CLOSED LOOP
INVERTING GAIN
vs
RF = 560 Ω
RF = 750 Ω
VCC = ±5 V,
RL = 100 Ω
f – Frequency – MHz
FREQUENCY
RF = 430 Ω
21
18
15
12
9
6
3
0
–3
–6
–9
–12
–15
Small Signal Closed Loop Inverting Gain – dB
101001000
Figure 17
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SMALL SIGNAL CLOSED LOOP
INVERTING GAIN
vs
RF = 560 Ω
RF = 750 Ω
VCC = ±15 V,
RL = 100 Ω
f – Frequency – MHz
FREQUENCY
RF = 430 Ω
21
18
15
12
9
6
3
0
–3
–6
–9
–12
–15
Small Signal Closed Loop Inverting Gain – dB
101001000
Figure 18
7
THS3112
THS3115
SLOS385 – SEPTEMBER 2001
TYPICAL CHARACTERISTICS
SMALL AND LARGE SIGNAL OUTPUT
vs
18
)
PP
(V
12
6
0
–6
–12
–18
Small and Large Signal Output – dB
–24
0.11101001000
FREQUENCY
4 V
VCC = ±5 V, G = 2
PP
RF = 680 Ω, RL = 100 Ω
2 V
PP
1.125 V
PP
0.711 V
PP
0.4 V
PP
0.125 V
PP
f – Frequency – MHz
Figure 19
HARMONIC DISTORTION
vs
–20
–40
–60
–80
Harmonic Distortion – dB
–100
5th Harmonic
–120
0.1110100
FREQUENCY
G = 2,
RF = 680 Ω,
RL 100 Ω,
VCC = ±15 V,
V
= 2 V
O(PP)
f – Frequency – MHz
2nd Harmonic
3rd Harmonic
4th Harmonic
SMALL AND LARGE SIGNAL OUTPUT
vs
4 V
PP
f – Frequency – MHz
FREQUENCY
VCC = ±15 V, G = 2
RF = 680 Ω, RL = 100 Ω
2 V
PP
1.125 V
PP
0.711 V
PP
0.4 V
PP
0.125 V
PP
18
)
PP
12
6
0
–6
–12
–18
Small and Large Signal Output – dB (V
–24
0.11101001000
Figure 20
HARMONIC DISTORTION
vs
PEAK-TO-PEAK OUTPUT VOLTAGE
–10
G = 2,
RF = 680 Ω,
RL 100 Ω,
–30
VCC = ±5 V,
f = 1MHz
–50
2nd Harmonic
3rd Harmonic
–70
Harmonic Distortion – dB
–90
–110
012345678
VPP – Peak-to-Peak Output Voltage – V
2nd Harmonic
4th Harmonic
5th Harmonic
HARMONIC DISTORTION
vs
FREQUENCY
–20
G = 2,
RF = 680 Ω,
RL 100 Ω,
VCC = ±5 V,
–40
VO = 2 V
PP
Harmonic Distortion – dB
–60
–80
–100
–120
3rd Harmonic
4th Harmonic
5th Harmonic
0.1110100
f – Frequency – MHz
2nd Harmonic
Figure 21
HARMONIC DISTORTION
vs
PEAK-TO-PEAK OUTPUT VOLTAGE
–70
2nd Harmonic
–80
–90
–100
Harmonic Distortion – dB
–110
0123456789
VPP – Peak-to-Peak Output Voltage – V
3rd Harmonic
5th Harmonic
4th Harmonic
G = 2,
RF = 680 Ω,
RL 100 Ω,
VCC = ±15 V,
f = 1MHz
Figure 22
VOLTAGE NOISE AND CURRENT NOISE
vs
FREQUENCY
Hz
nV/
– Voltage Noise –
V
100
Hz
pA/
10
– Current Noise –
V
n
n
I
1
10
VCC = ±5 V to ±15 V
TA = 25°C
I
n+
n
100
f – Frequency – Hz
I
n–
1 K
10 K
Figure 25
8
100 K
Figure 23
COMMON-MODE REJECTION RATIO
vs
80
70
60
50
40
30
20
10
0
CMRR – Common-Mode Rejection Ratio – dB
0.1110100
FREQUENCY
VCC = ±15 V
VCC = ±5 V
f – Frequency – MHz
G = 2,
RL 100 Ω,
RF = 1 kΩ
Figure 26
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Figure 24
POWER SUPPLY REJECTION RATIO
vs
70
60
50
PSRR – ±5 V
40
30
20
10
0
PSRR – Power Supply Rejection Ratio – dB
0.1110100
FREQUENCY
PSRR – ±15 V
f – Frequency – MHz
G = 2,
RL = 100 Ω,
RF = 680 Ω
Figure 27
F
THS3112
THS3115
SLOS385 – SEPTEMBER 2001
TYPICAL CHARACTERISTICS
CROSSTALK
vs
FREQUENCY
0
G = 2,
–10
VCC = ±5 V to ±15 V,
RL = 100 Ω,
–20
RF = 680 Ω
–30
–40
–50
–60
Crosstalk – dBc
–70
–80
–90
–100
0.11101001000
f – Frequency – MHz
Figure 28
INPUT OFFSET VOLTAGE
vs
FREE-AIR TEMPERATURE
0
VCC = ±15 V,
VCM = 0 V,
–1
RL = 100 Ω
–2
–3
–4
– Input Offset Voltage – mV
IO
–5
V
–6
–40 –200204060 80
TA – Free-Air Temperature – °C
OUTPUT IMPEDANCE
vs
100
Ω
10
1
– Output Impedance –
0.1
O
Z
0.01
0.11101001000
FREQUENCY
VCC = ±5 V to ±15 V,
RF = 1 kΩ
f – Frequency – MHz
1800
G = 2
1600
RF = 680 Ω,
RL = 100 Ω,
sµ
1400
TA = 25°C
V/
1200
1000
800
600
SR – Slew Rate –
400
200
0
024681012
Figure 29
INPUT OFFSET VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
10
5
0
–5
– Input Offset Voltage – mV
–10
IO
V
–15
85
–15–10–50 5 1015
VCM – Common-Mode Input Voltage – V
VCC = ±15 V,
TA = 25°C,
RL= 100 Ω
9
8
Aµ
7
6
5
4
VCC = ±5 V, I
3
– Input Bias Current –
2
IB
I
1
0
–40 –20020406080
SLEW RATE
vs
OUTPUT VOLTAGE STEP
VCC = ±15 V
VCC = ±5 V
VO – Output Voltage Step – V
Figure 30
INPUT BIAS CURRENT
vs
FREE-AIR TEMPERATURE
VCC = ±15 V, I
IB–
VCC = ±5 V, I
TA – Free-Air Temperature – °C
IB+
VCC = ±15 V, I
IB–
IB+
85
Figure 31
OUTPUT VOLTAGE
vs
OUTPUT CURRENT
5
4.5
4
3.5
3
2.5
2
1.5
– Output Voltage – V
O
V
VCC = ±5 V,
1
RF = 750 Ω
0.5
TA = 25°C
0
050100150200250
IO – Output Current – mA
Figure 34
Figure 32
OUTPUT VOLTAGE
vs
15
13.5
12
– Output Voltage – V
10.5
O
V
9
OUTPUT CURRENT
VCC = ±15 V,
RF = 750 Ω
TA = 25°C
050100150200250
IO – Output Current – mA
Figure 35
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Figure 33
OUTPUT VOLTAGE HEADROOM
vs
OUTPUT CURRENT
5
|VCC| – |VO|
4.5
VCC = ±15 V and ±5 V
TA = 25°C
4
G = 4,
3.5
RF = 750 Ω
3
2.5
2
1.5
1
Output Voltage Headroom – |V|
0.5
0
050100150200250
IO – Output Current – |mA|
Figure 36
9
THS3112
THS3115
SLOS385 – SEPTEMBER 2001
TYPICAL CHARACTERISTICS
SUPPLY CURRENT (PER CHANNEL)
vs
SUPPLY VOLTAGE
TA = 85°C
TA = 25°C
TA = –40°C
02.557.51012.515
VCC – Supply Voltage – ±V
– Supply Current (Per Channel) – mA
CC
I
16
14
12
10
8
6
4
2
0
Figure 37
SHUTDOWN RESPONSE
5
4
3
2
1
– Output Voltage – V
O
0
V
VCC = ±15 V
G = 8
RF = 330 Ω
RF = 100 Ω
VI = 0.5 VDC
012345678910
t – Time – ns
Figure 38
2
1.5
1
0.5
0
Shutdown Pulse – V
10
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THS3112
THS3115
SLOS385 – SEPTEMBER 2001
MECHANICAL DATA
D (R-PDSO-G**) PLASTIC SMALL-OUTLINE PACKAGE
14 PINS SHOWN
0.050 (1,27)
14
1
0.069 (1,75) MAX
A
0.020 (0,51)
0.014 (0,35)
0.010 (0,25)
0.004 (0,10)
DIM
8
7
PINS **
0.010 (0,25)
0.157 (4,00)
0.150 (3,81)
M
0.244 (6,20)
0.228 (5,80)
Seating Plane
0.004 (0,10)
8
14
0.008 (0,20) NOM
0°–ā8°
16
Gage Plane
0.010 (0,25)
0.044 (1,12)
0.016 (0,40)
A MAX
A MIN
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15).
D. Falls within JEDEC MS-012
0.197
(5,00)
0.189
(4,80)
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0.344
(8,75)
0.337
(8,55)
0.394
(10,00)
0.386
(9,80)
4040047/D 10/96
11
THS3112
THS3115
SLOS385 – SEPTEMBER 2001
MECHANICAL INFORMATION
DDA (S–PDSO–G8)Power PADt PLASTIC SMALL-OUTLINE
1,27
85
14
4,98
4,80
0,49
0,35
3,99
3,81
1,68 MAX
M
0,10
6,20
5,84
Seating Plane
Thermal Pad
(See Note D)
0,20 NOM
0°–8°
Gage Plane
0,25
0,89
0,41
1,55
1,40
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion not to exceed 0,15.
D. The package thermal performance may be enhanced by bonding the thermal pad to an external thermal plane.
This pad is electrically and thermally connected to the backside of the die and possibly selected leads.
PowerPAD is a trademark of Texas Instruments.
0,13
0,03
0,10
4202561/A 02/01
12
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THS3112
THS3115
SLOS385 – SEPTEMBER 2001
MECHANICAL DATA
PWP (R-PDSO-G**)PowerPAD PLASTIC SMALL-OUTLINE
20 PINS SHOWN
0,65
20
1
1,20 MAX
0,30
0,19
11
4,50
4,30
10
A
0,15
0,05
PINS **
DIM
M
0,10
6,60
6,20
Seating Plane
0,10
1614
Thermal Pad
(See Note D)
20
0,15 NOM
0°–ā8°
Gage Plane
0,25
0,75
0,50
2824
A MAX
A MIN
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusions.
D. The package thermal performance may be enhanced by bonding the thermal pad to an external thermal plane.
This pad is electrically and thermally connected to the backside of the die and possibly selected leads.
E. Falls within JEDEC MO-153
PowerPAD is a trademark of Texas Instruments Incorporated.
5,10
4,90
5,10
4,90
6,60
6,40
7,90
7,70
9,80
9,60
4073225/F 10/98
www.ti.com
13
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