1. Total resistance of one side in bridge configuration
2. Typical current limitation value
I
OUT
9A
(2)
VCC
36 V
VN770KP-E
Quad smart power solid state relay
for complete H-bridge configurations
■ ECOPACK
®
: lead free and RoHS compliant
■ Automotive Grade: compliance with AEC
guidelines
■ Suited as low voltage bridge
■ Linear current limitation
■ Very low standby power dissipation
■ Short circuit protected
■ Status flag diagnostic (open drain)
■ Integrated clamping circuits
■ Undervoltage protection
■ ESD protection
Description
The VN770KP-E is a device formed by three
monolithic chips housed in a standard SO-28
package: a double high side and two low side
switches. Both the double high side and low side
switches are made using STMicroelectronics
VIPower™ M0-3 Technology.
Table 1.Device summary
SO-28
This device is suitable to drive a DC motor in a
bridge configuration as well as to be used as a
quad switch for any low voltage application.
The dual high side switches have built-in thermal
shutdown to protect the chips from over
temperature and current limiter blocks to protect
the device from short circuit. Status output is
provided to indicate open load in off and on-state
and over temperature.
The low side switches are two OMNIFET II types
(fully auto protected Power MOSFET in
VIPower™ technology). They have built-in
thermal shutdown, linear current limitation and
overvoltage clamping. Fault feedback for thermal
intervention can be detected by monitoring the
voltage at the input pin.
Table 10.Protections (per each channel) (continued)
Symbol Parameter Test conditions Min Typ Max Unit
71013A
I
Current limitation
lim
Tj=125°C813A
5.5 V < VCC<36V13A
V
demag
voltage
=1A; L=6mH VCC-41 VCC-48 VCC- 55 V
I
OUT
Turn-off output clamp
Note:To ensure long term reliability under heavy overload or short circuit conditions, protection
and related diagnostic signals must be used together with a proper software strategy. If the
device is subjected to abnormal conditions, this software must limit the duration and number
of activation cycles.
Table 11.Openload detection (per each channel)
Symbol Parameter Test conditions Min Typ Max Unit
IOL Openload on-state detection threshold VIN = 5 V 204080mA
t
DOL(on)
V
t
DOL(off)
Openload on-state detection delay I
Openload off-state voltage detection
OL
threshold
= 0 A 200µs
OUT
= 0 V 1.52.53.5V
V
IN
Openload detection delay at turn-off 1000µs
2.4 Electrical characteristics for low side switches
-40°C < Tj < 150°C, unless otherwise specified.
Table 12.Off-state
Symbol Parameter Test conditions Min Typ Max Unit
V
CLAMP
V
V
I
V
I
Drain source clamp
voltage
Drain source clamp
CLTH
threshold voltage
Input threshold voltage VDS=VIN; ID= 1 mA 0.5 2.5 V
Figure 4.Open-load status timing (with external pull-up)
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14/33 Doc ID 022021 Rev 1
VN770KP-EElectrical specifications
2.6 Electrical characterization for dual high side switch
Figure 6.Off-state output currentFigure 7.Input clamp voltage
IL(off1) (µA)
1.6
1.44
1.28
1.12
Off state
Vcc=36V
Vin=Vout=0V
0.96
0.8
0.64
0.48
0.32
0.16
0
-50 -250255075 100 125 150 175
Tc ( ºC )
Figure 8.High level input currentFigure 9.Input high level voltage
Figure 10. Input low level voltageFigure 11. Input hysteresis voltage
Vil (V)
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50 -250255075100 125 150 175
Tc ( ºC )
Vicl (V)
8
7.75
7.5
Iin=1mA
7.25
7
6.75
6.5
6.25
6
-50 -250255075 100 125 150 175
Tc ( ºC )
Vih (V)
3.5
3.375
3.25
3.125
3
2.875
2.75
2.625
2.5
2.375
2.25
2.125
2
-50 -250255075 100 125 150 175
Tc ( ºC )
Vhyst (V)
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50 -250255075100 125 150 175
Tc (°C)
Doc ID 022021 Rev 115/33
Electrical specificationsVN770KP-E
Figure 12. Overvoltage shutdownFigure 13. I
Vov (V)
50
47.5
45
42.5
40
37.5
35
32.5
30
-50 -250255075 100 125 150 175
Tc ( ºC )
Ilim (A)
20
18
16
14
12
10
8
6
4
2
0
-50 -250255075100 125 150 175
LIM
Vcc=13V
vs T
case
Tc ( ºC )
Figure 14. Turn-on voltage slopeFigure 15. Turn-off voltage slope
dVout/dt(on) (V/ms)
1000
900
800
700
600
500
400
300
200
100
Vcc=13V
Rl=13Ohm
0
-50 -250255075 100 125 150 175
Tc ( ºC )
dVout/dt(off) (V/ms)
500
450
400
350
300
250
200
150
100
50
Vcc=13V
Rl=13Ohm
0
-50 -250255075100 125 150 175
Figure 16. On-state resistance vs T
case
Ron (mOhm)
400
350
300
250
200
150
100
50
0
-50 -250255075100 125 150 175
Iout=1A
Vcc=8V; 13V & 36V
Tc ( ºC )
16/33 Doc ID 022021 Rev 1
Figure 17. On-state resistance vs V
Ron (mOhm)
400
350
300
250
200
150
100
50
0
5 10152025303540
Iout=1A
Tc=150ºC
Tc= 25 ºC
Tc= - 40ºC
Vcc(V)
CC
VN770KP-EElectrical specifications
Figure 18. Status leakage currentFigure 19. Status low output voltage
Ilstat (µA)
0.03
0.0275
0.025
0.0225
0.02
0.0175
0.015
0.0125
0.01
0.0075
0.005
0.0025
Vstat=5V
0
-50 -250255075 100 125 150 175
Tc ( ºC )
Vstat (V)
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Istat=1.6mA
0.1
0
-50 -250255075100 125 150 175
Tc ( ºC )
Figure 20. Openload on-state detection
threshold
Iol (mA)
60
55
50
45
40
35
30
25
20
15
10
Vcc=13V
Vin=5V
-50 -250255075100 125 150 175
Tc ( ºC )
Figure 22. Status clamp voltage
Vscl (V)
8
7.75
7.5
7.25
6.75
6.5
6.25
Istat=1mA
7
6
-50 -250255075 100 125 150 175
Tc ( ºC )
Figure 21. Openload off-state voltage
detection threshold
Vol (V)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
Vin=0V
-50 -250255075100 125 150 175
Tc ( ºC )
Doc ID 022021 Rev 117/33
Electrical specificationsVN770KP-E
2.7 Electrical characterization for low side switches
Figure 23. Static drain source on resistanceFigure 24. Derating curve
Figure 25. TransconductanceFigure 26. Transfer characteristics
Figure 27. Turn-on current slope (Vin=5V)Figure 28. Turn-on current slope (Vin=3.5V)
18/33 Doc ID 022021 Rev 1
VN770KP-EElectrical specifications
Figure 29. Input voltage vs input chargeFigure 30. Capacitance variations
Figure 31. Switching time resistive load
(V
=5V)
in
Figure 32. Switching time resistive load
(Rg=10Ohm)
Figure 33. Output characteristicsFigure 34. Step response current limit
Doc ID 022021 Rev 119/33
Electrical specificationsVN770KP-E
Figure 35. Source drain diode forward
characteristics
v
Figure 37. Static drain source on resistance vs
input voltage (I
=7A)
d
Figure 36. Static drian source on resistance vs
I
d
Figure 38. Static drain source on resistance vs
input voltage
Figure 39. Normalized input threshold voltage
vs temperature
20/33 Doc ID 022021 Rev 1
Figure 40. Normalized on resistance vs
temperature
VN770KP-EElectrical specifications
Figure 41. Turn-off drain source voltage slope
(V
=3.5V)
in
Figure 43. Current limit vs junction
temperature
Figure 42. Turn-off drain source voltage slope
(Vin=5V)
Doc ID 022021 Rev 121/33
Application recommendationsVN770KP-E
3 Application recommendations
Figure 44. Application diagram bridge drivers
Most motor bridge drivers use a reverse battery protection diode (D) inside the supply rail.
This diode prevents a reverse current flow back to V
in case the bridge becomes
BATT
disabled via the logic inputs while motor inductance still carries energy. In order to prevent a
hazardous overvoltage at circuit supply terminal (V
), a blocking capacitor (C) is needed to
CC
limit the voltage overshoot. As basic orientation, 50µF per 1A load current is recommended.
As an alternative, a Zener protection (Z) is also suitable.
Even if a reverse polarity diode is not present, it is recommended to use a capacitor or
Zener at V
because a similar problem appears in case the supply terminal of the module
CC
has intermittent electrical contact to the battery or gets disconnected while the motor is
operating.
22/33 Doc ID 022021 Rev 1
VN770KP-EApplication recommendations
Figure 45. Recommended motor operation
Doc ID 022021 Rev 123/33
Application recommendationsVN770KP-E
Figure 46. Waveforms
24/33 Doc ID 022021 Rev 1
VN770KP-EThermal data
4 Thermal data
4.1 SO-28 thermal data
Figure 47. SO-28 PC board
Note:Layout condition of Rth and Zth measurements (PCB FR4 area = 58mm x 58mm, PCB
thickness = 2mm, Cu thickness = 35µm, Copper areas: from minimum pad layout to 6cm
Figure 48. Chipset configuration
LOW SIDE
CHIP
R
thAB
HIGH SIDE
CHIP
R
thAC
LOW SIDE
CHIP
channel 1,2
channel 3
R
thB
R
R
thA
thBC
channel 4
R
thC
Figure 49. Auto and mutual Rthj-amb vs PCB copper area in open box free air
condition
(a)
2
).
a. see definitions in Section 5.3 on page 31
Doc ID 022021 Rev 125/33
Thermal data VN770KP-E
4.2 Thermal calculation in clockwise and anti-clockwise
operation in steady state mode
Table 19.Thermal calculation in clockwise and anti-clockwise operation in steady state mode
HS1 HS2 LS
On Off Off On
Off On On Off
LS
3
4
P
P
dHS1
dHS2
x R
R
thHSLS
x R
R
thHSLS
T
jHS12
thHS
thHS
+ P
+ T
+ P
+ T
amb
amb
dLS4
dLS3
x
x
P
P
dHS1
x R
dHS2
x R
x R
x R
T
jLS3
thHSLS
thLSLS
thHSLS
thLS
+ T
+ T
+ P
amb
+ P
amb
dLS4
dLS3
T
jLS4
P
P
dHS1
dHS2
x R
R
x R
R
thLSLS
thHSLS
thLS
thHSLS
+ T
+ T
+ P
amb
+ P
amb
dLS4
dLS3
4.2.1 Thermal resistances definition
Values according to the PCB heatsink area.
R
= R
thHS
in on-state)
R
= R
thLS
R
thHSLS
= R
high side and low side chips
R
thLSLS
= R
4.2.2 Thermal calculation in transient mode
T
= Z
jHS12
T
= Z
jLS3
T
= Z
jLS4
thHS1
thLS3
thHS1LS4
thLS3LS4
thHS
thHSLS
thHSLS
= R
= R
= high side chip thermal resistance junction to ambient (HS1 or HS2
thHS2
= low side chip thermal resistance junction to ambient
thLS4
= R
thHS2LS3
= mutual thermal resistance junction to ambient between
= mutual thermal resistance junction to ambient between low side chips
(b)
x P
x P
x P
dHS12
dHS12
dHS12
+ Z
+ Z
+ Z
thHSLS
thLS
thLSLS
x (P
x P
x P
dLS3
dLS3
dLS3
+ Z
+ P
thLSLS
+ Z
dLS4
thLS
) + T
x P
x P
amb
dLS4
dLS4
+ T
+ T
amb
amb
x
x
4.2.3 Single pulse thermal impedance definition
Values according to the PCB heatsink area.
Z
= high side chip thermal impedance junction to ambient
thHS
Z
thLS
Z
thHSLS
= Z
thLS3
= Z
= Z
thLS4
thHS12LS3
= low side chip thermal impedance junction to ambient
= Z
thHS12LS4
= mutual thermal impedance junction to ambient between
high side and low side chips
Z
thLSLS
= Z
thLS3LS4
= mutual thermal impedance junction to ambient between low side chips
4.2.4 Pulse calculation formula
Z
THδ
where δ = tP/T
b. Calculation is valid in any dynamic operating condition. Pd values set by user.
26/33 Doc ID 022021 Rev 1
R
TH
δ Z
THtp
1 δ–()+⋅=
VN770KP-EThermal data
Figure 50. SO-28 HSD thermal impedance junction ambient single pulse
Footprint
2
1 cm
2
2 cm
2
6 cm
Footprint
2
1 cm
2
2 cm
2
6 cm
Figure 51. SO-28 LSD thermal impedance junction ambient single pulse
Doc ID 022021 Rev 127/33
Thermal data VN770KP-E
Figure 52. Thermal fitting model of an H-bridge in SO-28
Table 20.Thermal parameters
(1)
Area/island (cm2) Footprint 1 2 6
R1 = R6 (°C/W) 2.6
R2 (°C/W) 3.5
R12 = R17 (°C/W) 3.5
R3 = R13 = R 18 (°C/W) 15.5
R4 = R14 = R19 (°C/W) 10.5
R5 = R15 = R20 (°C/W) 62.2852.28 44.28 32.28
R7 = R8 = R9 = R10 (°C/W) 150
R11 = R16 (°C/W) 1.5
C1 = C5 (W.s/°C) 0.00025
C2 = C7 = C11 (W.s/°C) 0.024
C3 = C8 =C 12 (W.s/°C) 0.2
C4 = C9 = C13 (W.s/°C) 1.6 1.61 1.7 3.25
C6 = C10 (W.s/°C) 0.00075
1. The blank space means that the value is the same as the previous one.
28/33 Doc ID 022021 Rev 1
VN770KP-EPackage mechanical data
5 Package mechanical data
5.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
5.2 SO-28 mechanical data
Figure 53. SO-28 package outline
Doc ID 022021 Rev 129/33
Package mechanical data VN770KP-E
Table 21.SO-28 mechanical data
mm inch
DIM
Min. Typ Max. Min. Typ. Max.
A 2.65 0.104
a1 0.1 0.3 0.004 0.012
b 0.35 0.49 0.013 0.019
b1 0.23 0.32 0.009 0.012
C 0.5 0.020
c1 45° (typ.)
D 17.7 18.1 0.697 0.713
E 10 10.65 0.393 0.419
e 1.27 0.050
e3 16.51 0.650
F 7.4 7.6 0.291 0.299
L 0.4 1.27 0.016 0.050
S 8° (max.)
30/33 Doc ID 022021 Rev 1
VN770KP-EPackage mechanical data
5.3 SO-28 tube shipment
Figure 54. Tube dimensions (no suffix)
5.4 Tape and reel shipment
Figure 55. Tape and reel dimensions (suffix “13TR”)
Doc ID 022021 Rev 131/33
Revision history VN770KP-E
6 Revision history
Table 22.Document revision history
Date Revision Changes
20-Jul-20111 Initial release.
32/33 Doc ID 022021 Rev 1
VN770KP-E
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