Single-channel high-side driver with analog current sense
for automotive applications
Max supply voltageV
Operating voltage rangeV
Typ. ON-state resistanceR
Current limitation (typ)I
OFF-state supply currentI
1. Typical value with all loads connected.
■ General
– Inrush current active management by
power limitation
– Very low standby current
– 3 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
– Very low current sense leakage
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
current range
– Current sense disable
– Output short to ground indication
– Overload and short to ground (power
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
of V
CC
– Overtemperature shutdown with
autorestart (thermal shutdown)
CC
CC
ON
LIMH
S
41 V
4.5 V to 28 V
10 mΩ
85 A
(1)
2 µA
– Reverse battery protection with self switch
on of the Power MOSFET
– Electrostatic discharge protection
Application
■ All types of resistive, inductive and capacitive
loads
Description
The VN5E010MH-E is a single-channel high-side
driver manufactured in the ST proprietary
VIPower M0-5 technology and housed in the tiny
HPAK package. The VN5E010MH-E is designed
to drive 12 V automotive grounded loads
delivering protection, diagnostics and easy 3 V
and 5 V CMOS compatible interface with any
microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with auto
restart and overvoltage active clamp.
A dedicated analog current sense pin is
associated with every output channel in order to
provide enhanced diagnostic functions including
fast detection of overload and short-circuit to
ground through power limitation indication and
overtemperature indication.
The current sensing and diagnostic feedback of
the whole device can be disabled by pulling the
CS_DIS pin high to allow sharing of the external
sense resistor with other similar devices
Values specified in this section are for 8 V < VCC < 28 V, -40 °C < Tj < 150 °C, unless
otherwise specified.
Table 5.Power section
SymbolParameterTest conditionsMin. Typ. Max.Unit
V
V
V
USDhyst
R
R
ON-Rev
V
clamp
I
L(off)
Table 6.Switching (V
Operating supply voltage4.51328V
CC
Undervoltage shutdown3.54.5V
USD
Undervoltage shutdown
hysteresis
ON-state resistance
ON
R
in reverse battery
DSON
condition
Clamp voltageICC = 20 mA; I
I
Supply current
S
OFF-state output current
= 13 V, Tj = 25 °C)
CC
I
= 6 A; Tj = 25 °C10
OUT
= 6 A; Tj = 150 °C20
OUT
I
= 6 A; V
OUT
V
= -13 V; I
CC
= 25 °C
T
j
OFF-state: V
= V
V
IN
OUT
ON-state: V
I
= 0 A
OUT
V
= V
IN
OUT
= 5 V; Tj = 25 °C13
CC
= -6 A;
OUT
= 0 A414652V
OUT
= 13 V; Tj = 25 °C;
CC
= V
CC
= 0 V; V
= 0 V
SENSE
= 13 V; V
CC
= 5 V;
IN
= 13 V;
Tj = 25 °C
V
IN
= V
= 0 V; VCC = 13 V;
OUT
Tj = 125 °C
0.5V
1.53mA
00.01 3 µA
05
10mΩ
2 5 µA
SymbolParameter Test conditionsMin.Typ.Max.Unit
mΩI
= 2.2 Ω
R
Turn-on delay time
Turn-off delay time
Turn-on voltage
/dt)
on
slope
Turn-off voltage
/dt)
off
slope
(dV
(dV
t
d(on)
t
d(off)
OUT
OUT
Switching energy
W
ON
losses at turn-on
(t
)
won
Switching energy
W
OFF
losses at turn-off
(t
)
woff
L
(see Figure 5)
R
= 2.2 Ω
L
(see Figure 5)
= 2.2 Ω -(see Figure 23)- V/µs
R
L
R
= 2.2 Ω -(see Figure 25)- V/µs
L
= 2.2 Ω
R
L
(see Figure 5)
= 2.2 Ω
R
L
(see Figure 5)
-40 -µs
-28 -µs
-2 -mJ
-0.6 -mJ
Doc ID 15681 Rev 59/34
Electrical specificationsVN5E010MH-E
Table 7.Logic inputs
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
I
V
I
IH
V
I(hyst)
V
ICL
V
CSDL
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
V
CSCL
a
Table 8.Protection and diagnostics
Low-level input voltage0.9V
IL
Low-level input currentV
IL
High-level input voltage2.1V
IH
High-level input currentV
= 0.9 V1µA
IN
= 2.1 V10µA
IN
Input hysteresis voltage0.25V
I
= 1 mA5.57
Input clamp voltage
IN
= -1 mA-0.7
I
IN
Low-level CS_DIS voltage0.9V
Low-level CS_DIS currentV
= 0.9 V1µA
CSD
High-level CS_DIS voltage2.1V
High-level CS_DIS currentV
= 2.1 V10µA
CSD
CS_DIS hysteresis voltage0.25V
I
= 1 mA5.57
(1)
CSD
= -1 mA-0.7
I
CSD
CS_DIS clamp voltage
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
= 13 V6085120
I
limH
I
limL
T
T
T
T
HYST
V
DEMAG
V
1. To ensure long term reliability under heavy overload or short-circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
TSD
R
RS
ON
Short-circuit current
Short-circuit current
during thermal cycling
Shutdown
temperature
Reset temperatureTRS + 1 TRS + 5°C
Thermal reset of
status
Thermal hysteresis
TSD-TR
)
(T
Turn-off output voltage
clamp
Output voltage drop
limitation
CC
5 V < V
V
CC
I
OUT
< 28 V120
CC
= 13 V; TR < Tj < T
= 2 A; V
IN
= 0;
L = 6 mH
= 0.5 A;
I
OUT
Tj = -40 °C to 150 °C
TSD
21A
150175200°C
135°C
7°C
V
CC
- 41 V
CC
- 46 V
- 52V
CC
25mV
A
10/34 Doc ID 15681 Rev 5
VN5E010MH-EElectrical specifications
Table 9.Current sense (8 V < V
SymbolParameterTest conditionsMin.Typ.Max.Unit
K
K
dK1/K
K
dK2/K
K
dK3/K
I
0
1
2
3
OUT/ISENSE
I
OUT/ISENSE
(1)
Current sense ratio drift
1
I
OUT/ISENSE
(1)
Current sense ratio drift
2
I
OUT/ISENSE
(1)
Current sense ratio drift
3
< 18 V)
CC
I
= 0.25 A; V
OUT
SENSE
Tj = -40 °C to 150 °C
= 25 °C to 150 °C
T
j
I
= 6 A; V
OUT
= -40 °C to 150 °C
T
j
= 25 °C to 150 °C
T
j
I
= 6 A; V
OUT
= 0 V;
V
CSD
SENSE
SENSE
Tj = -40 °C to 150 °C
I
= 10 A; V
OUT
SENSE
Tj = -40 °C to 150 °C
= 25 °C to 150 °C
T
j
I
= 10 A; V
OUT
V
= 0 V;
CSD
= -40 °C to 150 °C
T
j
I
= 25 A; V
OUT
= -40 °C to 150 °C
T
j
= 25 °C to 150 °C
T
j
I
= 25 A; V
OUT
= 0 V;
V
CSD
SENSE
SENSE
SENSE
Tj = -40 °C to 150 °C
= 0.5 V
= 0.5 V
= 0.5 V;
= 4 V
= 4 V;
= 4 V
= 4 V;
3000
7410
12000
3000
7410
11600
5350
5510
6740
6740
8500
7745
-1515%
5850
5800
6570
6570
7690
7195
-1111%
5915
5850
6420
6420
7000
6755
-88%
I
SENSE0
Analog sense leakage
current
= 0 A; V
I
OUT
V
= 5 V; V
CSD
= -40 °C to 150 °C
T
j
I
= 0 A; V
OUT
= 0 V; VIN= 5 V;
V
CSD
= -40 °C to 150 °C
T
j
I
= 2 A; V
OUT
= 5 V; V
V
CSD
SENSE
= 0 V;
IN
SENSE
SENSE
= 5 V;
IN
= 0 V;
= 0 V;
= 0 V;
01
02
µA
1
Tj = -40 °C to 150 °C
Open load ON-state
I
OL
current detection
threshold
V
SENSE
V
SENSEH
I
SENSEH
Max analog sense
output voltage
Analog sense output
(2)
voltage in fault condition
Analog sense output
(2)
current in fault condition
VIN = 5V, 8V<VCC<18V
=5µA
I
SENSE
I
OUT
V
V
CC
CC
= 18 A; R
= 13 V; R
= 13 V; V
= 3.9 kΩ 5V
SENSE
= 3.9 kΩ8V
SENSE
= 5 V9mA
SENSE
580mA
Doc ID 15681 Rev 511/34
Electrical specificationsVN5E010MH-E
Table 9.Current sense (8 V < V
< 18 V) (continued)
CC
SymbolParameterTest conditionsMin.Typ.Max.Unit
t
DSENSE1H
t
DSENSE1L
t
DSENSE2H
Δ
t
DSENSE2H
t
DSENSE2L
Delay response time
from falling edge of
CS_DIS pin
Delay response time
from rising edge of
CS_DIS pin
Delay response time
from rising edge of
IN pin
Delay response time
between rising edge of
output current and rising
edge of current sense
Delay response time
from falling edge of
IN pin
V
1.5 A < I
I
(see Figure 4)
V
1.5 A <I
I
(see Figure 4)
V
1.5 A < I
I
(see Figure 4)
V
I
I
I
V
1.5 A < I
I
(see fig Figure 4)
SENSE
SENSE
SENSE
SENSE
SENSE
SENSE
SENSE
SENSE
= 90% of I
OUT
OUTMAX
SENSE
SENSE
< 4 V,
< 25 A
OUT
= 90% of I
SENSE MAX
< 4 V,
< 25 A
OUT
= 10% of I
SENSE MAX
< 4 V,
< 25 A
OUT
= 90% of I
SENSE max
<4V,
= 90% of I
SENSEMAX,
OUTMAX
= 3 A (see Figure 6)
< 4 V,
< 25 A
OUT
= 10% of I
SENSE max
50100µs
520µs
270600µs
310µs
100250µs
1. Parameter guaranteed by design, it is not tested.
2. Fault condition includes: power limitation and overtemperature.
Figure 4.Current sense delay characteristics
INPUT
CS_DIS
LOAD CURRENT
CURRENT SENSE
t
DSENSE2H
t
DSENSE1L
t
DSENSE1H
t
DSENSE2L
12/34 Doc ID 15681 Rev 5
VN5E010MH-EElectrical specifications
Figure 5.Switching characteristics
V
OUT
t
Won
t
Woff
90%
t
f
dV
OUT
/dt
(off)
dV
OUT
/dt
(on)
80%
t
r
10%
t
INPUT
t
d(on)
t
d(off)
t
Figure 6.Delay response time between rising edge of ouput current and rising
edge of current sense (CS enabled)
V
IN
Δ
t
DSENSE2H
t
I
OUT
90% I
OUTMAX
I
OUTMAX
t
I
SENSE
I
90% I
SENSEMAX
SENSEMAX
t
Doc ID 15681 Rev 513/34
Electrical specificationsVN5E010MH-E
Figure 7.Output voltage drop limitation
V
cc-Vout
T
=150oC
j
V
on
V
on/Ron(T)
T
=25oC
j
T
=-40oC
j
I
out
Figure 8.I
I
OUT/ISENSE
12800
11600
10400
9200
8000
6800
5600
4400
3200
2000
OUT/ISENSE
vs. I
OUT
A
B
C
D
E
-2 1 4 7 10131619222528
I
(A)
OUT
A: Max, Tj = -40 °C to 150 °C
B: Max, T
C: Typical, T
= 25 °C to 150 °C
j
= -40 °C to 150 °C
j
D: Min, T
E: Min, Tj = -40 °C to 150 °C
= 25 °C to 150 °C
j
14/34 Doc ID 15681 Rev 5
VN5E010MH-EElectrical specifications
Figure 9.Maximum current sense ratio drift vs. load current
dK/K (%)
20
15
10
5
0
-5
-10
-15
-20
4710131619222528
A: Max, Tj = -40 °C to 150 °CB: Min, Tj = -40 °C to 150 °C
1. Parameter guaranteed by design; it is not tested.
Table 10.Truth table
ConditionsInputOutputSENSE (V
Normal operation
Overtemperature
Undervoltage
Overload
A
B
I
(A)
OUT
L
H
L
H
L
H
H
L
H
L
L
L
L
X
(no power limitation)
H
Cycling
(power limitation)
(1)
CSD
0
Nominal
0
V
SENSEH
0
0
Nominal
V
SENSEH
= 0 V)
(1)
Short-circuit to GND
(power limitation)
Negative output voltage
clamp
1. If the V
and external circuit.
is high, the SENSE output is at a high-impedance, its potential depends on leakage currents
CAll functions of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device are not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
16/34 Doc ID 15681 Rev 5
VN5E010MH-EElectrical specifications
2.4 Waveforms
Figure 10. Normal operation
INPUT
INPUT
Nominal loadNominal load
Nominal loadNominal load
I
I
OUT
OUT
V
V
SENSE
SENSE
V
V
CS_DIS
CS_DIS
Figure 11. Overload or short to GND
INPUT
INPUT
I
>
I
>
LimH
LimH
I
I
OUT
OUT
V
V
SENSE
SENSE
V
V
CS_DIS
CS_DIS
Power Limitation
Power Limitation
I
I
LimL
LimL
Thermal cycling
Thermal cycling
>
>
Doc ID 15681 Rev 517/34
Electrical specificationsVN5E010MH-E
Figure 12. Intermittent overload
INPUT
INPUT
I
I
OUT
OUT
V
V
SENSE
SENSE
V
V
CS_DIS
CS_DIS
I
I
LimH
LimH
V
V
SENSEH
SENSEH
>
>
>
>
Overload
Overload
I
I
LimL
LimL
Nominal load
>
>
Nominal load
Figure 13. TJ evolution in overload or short to GND
INPUT
INPUT
I
I
OUT
OUT
T
T
J
J
I
I
LimH
LimH
Self-limitation of fast thermal transients
Self-limitation of fast thermal transients
T
T
J_START
J_START
Power Limitation
Power Limitation
>
>
T
T
TSD
TSD
T
T
R
R
< I
< I
T
T
HYST
HYST
LimL
LimL
18/34 Doc ID 15681 Rev 5
VN5E010MH-EElectrical specifications
2.5 Electrical characteristics curves
Figure 14. OFF-state output currentFigure 15.High-level input current
Iloff [ nA]
6000
5000
4000
3000
2000
1000
0
-50- 250255075100125 150175
Tc [°C]
Iih [uA]
5
4.5
4
Vin= 2.1V
3.5
3
2.5
2
1.5
1
0.5
0
-50-250255075100125150175
Tc [°C]
Figure 16. Input clamp voltageFigure 17. Low-level input voltage
Vicl [V]
7
6.8
6.6
Iin= 1mA
6.4
6.2
6
5.8
5.6
5.4
5.2
5
-50-250255075100125150175
Tc [°C]
Vil [V ]
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50-250255075100125150175
Tc [°C]
Figure 18. High-level input voltageFigure 19. Input hysteresis voltage
Vih [V]
4
3.5
3
2.5
2
1.5
1
0.5
0
-50-250255075100125150175
Tc [°C]
Vihyst [V]
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-50-250255075100125150175
Tc [°C]
Doc ID 15681 Rev 519/34
Electrical specificationsVN5E010MH-E
V
Figure 20. ON-state resistance vs. T
Ron [m Ohm ]
80
70
case
Figure 21. ON-state resistance vs. V
Ron [m Ohm ]
30
25
60
50
40
Iout= 6A
Vcc= 13V
30
20
15
10
20
10
0
-50-250255075100125150175
Tc [°C]
5
0
0510152025303540
Vcc [V]
Figure 22. Undervoltage shutdownFigure 23. Turn-on voltage slope
Vusd [V]
16
14
12
10
8
6
4
2
0
-50-250255075100125150175
Tc [°C]
(dV out /dt)On [V/m s]
1000
900
800
700
Vcc= 13V
Rl= 13 Ω
600
500
400
300
200
100
0
-50- 250255075100125150175
Tc [°C]
CC
Tc= 150°C
Tc= 125°C
Tc= 25°C
Tc= -40°C
Figure 24. I
LIMH
vs. T
case
Ilim h [A]
100
90
cc= 13V
80
70
60
50
40
-50-250255075100125150175
Tc [°C]
20/34 Doc ID 15681 Rev 5
Figure 25. Turn-off voltage slope
(dVout/dt)Off [V/ms]
1000
900
800
700
600
500
400
300
200
100
0
-50- 250255075100125150175
Vcc= 13V
Rl= 13 Ω
Tc [°C]
VN5E010MH-EElectrical specifications
Figure 26.High-level CS_DIS voltageFigure 27.CS_DIS clamp voltage
Vcsdh [V]
4
3.5
3
2.5
2
1.5
1
0.5
0
-50-250255075100125150175
Tc [°C]
Vcsdcl [V]
10
9
8
Iin= 1mA
7
6
5
4
3
2
1
0
-50-250255075100125150175
Tc [°C]
Figure 28. Low-level CS_DIS voltage
Vcsdl [V]
4
3.5
3
2.5
2
1.5
1
0.5
0
-50-250255075100125150175
Tc [°C]
Doc ID 15681 Rev 521/34
Electrical specificationsVN5E010MH-E
2.6 Application information
Figure 29. Application schematic
+5V
MCU
R
prot
R
prot
R
prot
R
SENSE
C
ext
CS_DIS
IN
CS
45V
2.7 Load dump protection
Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
V
max DC rating. The same applies if the device is subject to transients on the VCC line
CC
that are greater than the ones shown in the ISO 7637-2 2004 (E) table.
GND
V
20V
CC
OUT
D
ld
2.8 MCU I/Os protection
When negative transients are present on the VCC line, the control pins are pulled negative to
approximatly -1.5 V. ST suggests to insert a resistor (R
microcontroller I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (input levels compatibility) with the latch-up limit of
microcontroller I/Os.
Equation 1
-V
CCpeak
Calculation example:
For V
CCpeak
75 Ω ≤ R
= - 1.5 V; I
≤ 240 kΩ.
prot
latchup
Recommended values: R
22/34 Doc ID 15681 Rev 5
/ I
≥ 20 mA; V
=10 kΩ, C
prot
latchup
≤ R
OHμC
EXT
≤ (V
prot
≥ 4.5 V
= 10 nF.
) in line to prevent the
prot
- VIH ) / I
OHμC
IHmax
VN5E010MH-EElectrical specifications
2.9 Current sense and diagnostic
The current sense pin performs a double function (see Figure 30: Current sense and
diagnostic):
●Current mirror of the load current in normal operation, delivering a current
proportional to the load one according to a know ratio K
The current I
external resistor R
minimum (see parameter V
can be easily converted to a voltage V
SENSE
. Linearity between I
SENSE
SENSE
in Table 9: Current sense (8 V < V
OUT
and V
current sense accuracy depends on the output current (refer to current sense electrical
characteristics Table 9: Current sense (8 V < V
●Diagnostic flag in fault conditions, delivering a fixed voltage V
maximum current I
SENSEH
in case of the following fault conditions (refer to
< 18 V)).
CC
Table 10: Truth table):
–Power limitation activation
–Overtemperature
A logic level high on CS_DIS pin sets at the same time all the current sense pins of the
device in a high-impedance state, thus disabling the current monitoring and diagnostic
detection. This feature allows multiplexing of the microcontroller analog inputs by sharing of
sense resistance and ADC line among different devices.
.
X
SENSE
by means of an
SENSE
is ensured up to 5 V
CC
SENSEH
< 18 V)). The
up to a
Figure 30. Current sense and diagnostic
V
BAT
V
CC
41V
Overtemperature
Pwr_Lim
CS_DIS
I
OUT/KX
I
SENSEH
V
SENSEH
CURRENT
SENSEn
R
PROT
To uC ADC
R
SENSE
V
SENSE
Main MOSn
GND
OUTn
Load
Doc ID 15681 Rev 523/34
Electrical specificationsVN5E010MH-E
2.10 Maximum demagnetization energy (V
Figure 31. Maximum turn-off current versus inductance
100
A
B
C
10
I (A)
1
0, 1110100L (mH)
=13.5 V)
CC
(1)
A
B
C
VIN, I
: T
: T
: T
= 150 °C (single pulse)
jstart
= 100 °C (repetitive pulse)
jstart
= 125 °C (repetitive pulse)
jstart
L
DemagnetizationDemagnetizationDemagnetization
t
1. Values are generated with R
In case of repetitive pulses, T
the temperature specified above for curves A and B.
=0 Ω.
L
(at beginning of each demagnetization) of every pulse must not exceed
jstart
24/34 Doc ID 15681 Rev 5
VN5E010MH-EPackage and PC board thermal data
3 Package and PC board thermal data
3.1 HPAK thermal data
Figure 32. PC board
1. Layout condition of Rth and Zth measurements (PCB FR4 area = 58 mm x 58 mm,
PCB thickness =1.8 mm, Cu thickness = 70 µm, Copper areas: from minimum pad lay-out to 8 cm
Figure 33. R
thj-amb
(1)
vs. PCB copper area in open box free air condition
RTHj_amb(°C/W)
70
65
2
).
60
55
50
45
40
35
30
0246810
PCB Cu heatsink area (cm^2)
Doc ID 15681 Rev 525/34
Package and PC board thermal dataVN5E010MH-E
Figure 34. HPAK thermal impedance junction ambient single pulse
ZTH (°C/W)
100
Cu=8 cm2
Cu=2 cm2
Cu=foot print
10
1
0.1
0.0010.010.11101001000
Time (s)
Figure 35. Thermal fitting model of a single-channel HSD in HPAK
1. The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
(1)
Equation 2: pulse calculation formula
Z
THδ
RTHδ Z
where δ = tP/T
26/34 Doc ID 15681 Rev 5
THtp
1 δ–()+⋅=
VN5E010MH-EPackage and PC board thermal data
Table 14.Thermal parameter
Area/island (cm2)Footprint48
R1 (°C/W)0.01
R2 (°C/W)0.15
R3 (°C/W)0.5
R4 (°C/W)8
R5 (°C/W)282212
R6 (°C/W)312516
C1 (W.s/°C)0.005
C2 (W.s/°C)0.05
C3 (W.s/°C)0.1
C4 (W.s/°C)0.4
C5 (W.s/°C)0.81.43
C6 (W.s/°C)369
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Package and packing informationVN5E010MH-E
4 Package and packing information
4.1 ECOPACK
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
®
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
4.2 HPAK mechanical data
Figure 36. HPAK package dimension
.
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VN5E010MH-EPackage and packing information
Table 15.HPAK mechanical data
Data book mm
Ref. dim
Nom.Min.Max.
A2.202.40
A10.901.10
A20.030.23
b0.450.60
b45.205.40
c0.450.60
c20.480.60
D6.006.20
D15.10
E6.406.60
E15.20
e0.85
e11.601.80
e23.303.50
e35.005.20
H9.3510.10
L1
(L1)2.80
L20.80
L40.601.00
R0.20
V20°8°
Doc ID 15681 Rev 529/34
Package and packing informationVN5E010MH-E
4.3 HPAK suggested land pattern
Figure 37. HPAKsuggested pad layout
(1)
All dimensions are in mm.
1. The land pattern proposed is not intended to overrule User's PCB design, manufacturing and soldering
process rules
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VN5E010MH-EPackage and packing information
4.4 Packing information
The devices can be packed in tube or tape and reel shipments (see Table 16: Device
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