power limitation
– Very low standby current
– 3 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
– Very low current sense leakage
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
current range
– Current sense disable
– OFF-state open-load detection
– Output short to V
– Overload and short to ground (power
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
of V
CC
– Overtemperature shut down with
autorestart (thermal shutdown)
detection
CC
CC
CC
ON
LIMH
S
41 V
4.5 V to 28 V
10 mΩ
85 A
(1)
2 µA
– Reverse battery protection with self switch
on of the Power MOSFET
(see Figure 32)
– Electrostatic discharge protection
Applications
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VN5E010AH is a single-channel high-side
driver manufactured in the ST proprietary
VIPower M0-5 technology and housed in the tiny
HPAK package. The VN5E010AH is designed to
drive 12 V automotive grounded loads delivering
protection, diagnostics and easy 3 V and 5 V
CMOS compatible interface with any
microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with autorestart and overvoltage active clamp. A dedicated
analog current sense pin is associated with every
output channel in order to provide ehnanced
diagnostic functions including fast detection of
overload and short-circuit to ground through
power limitation indication, overtemperature
indication, short-circuit to Vcc diagnosis and
ON- and OFF-state open-load detection.
The current sensing and diagnostic feedback of
the whole device can be disabled by pulling the
CS_DIS pin high to allow sharing of the external
sense resistor with other similar devices
Voltage controlled input pin with hysteresis, CMOS compatible. Controls output
switch state
Analog CS pin, delivers a current proportional to the load current
CS_DISActive high CMOS compatible pin, to disable the CS pin
1. Pins 1 and 7 must be externally tied together.
Doc ID 15984 Rev 25/37
Block diagram and pin configurationVN5E010AH
Figure 2.Configuration diagram (top view) not in scale
1234 567
IN
GND
OUT
Table 2.Suggested connections for unused and not connected pins
Vcc
CS CS_DIS
OUT
Connection / pinCSOUTINCS_DIS
FloatingNot allowedXXX
To ground
Through 1 kΩ
resistor
Through 22 kΩ
resistor
Through 10 kΩ
resistor
Through 10 kΩ
resistor
6/37 Doc ID 15984 Rev 2
VN5E010AHElectrical specifications
2 Electrical specifications
Figure 3.Current and voltage conventions
I
S
V
CC
I
I
SENSE
V
SENSE
OUT
V
OUT
I
CSD
V
CSD
I
IN
V
IN
CS_DIS
IN
GND
I
GND
OUT
CS
V
CC
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the Table 3: Absolute maximum ratings may
cause permanent damage to the device . These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
program and other relevant quality document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
-V
I
OUT
-I
I
CSD
V
CSENSE
E
DC supply voltage 41V
CC
Reverse DC supply voltage16V
CC
DC output currentInternally limitedA
Reverse DC output current 20A
OUT
I
DC input current -1 to 10mA
IN
DC current sense disable input current -1 to 10mA
Current sense maximum voltage (V
Maximum switching energy (single pulse)
MAX
(L = 2.2 mH; R
I
= I
OUT
limL
L
(Typ.))
= 0 Ω; V
= 13.5 V; T
BAT
CC
> 0)
jstart
= 150 °C;
V
- 41
CC
+V
CC
645mJ
V
V
Doc ID 15984 Rev 27/37
Electrical specificationsVN5E010AH
Table 3.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Electrostatic discharge
(human body model: R = 1.5 kΩ; C = 100 pF)
4000
2000
4000
5000
5000
V
V
V
V
V
V
V
ESD
ESD
T
–IN
–CS
–CS_DIS
–OUT
–V
CC
Charge device model (CDM-AEC-Q100-011)750V
Junction operating temperature-40 to 150°C
T
j
Storage temperature-55 to 150 °C
stg
2.2 Thermal data
Table 4.Thermal data
SymbolParameterMax. valueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case 0.55°C/W
Thermal resistance junction-ambient 67.7°C/W
8/37 Doc ID 15984 Rev 2
VN5E010AHElectrical specifications
2.3 Electrical characteristics
Values specified in this section are for 8 V < V
< 28 V, -40 °C < Tj < 150 °C, unless
CC
otherwise specified.
Table 5.Power section
SymbolParameterTest conditionsMin. Typ. Max.Unit
V
V
V
USDhyst
R
R
ON-Rev
V
clamp
I
L(off)
Operating supply voltage4.51328V
CC
Undervoltage shutdown3.54.5V
USD
Undervoltage shutdown
hysteresis
ON-state resistance
ON
R
in reverse battery
DSON
condition
Clamp voltageI
I
Supply current
S
OFF-state output current
I
= 6 A; Tj = 25 °C10
OUT
= 6 A; Tj = 150 °C20
OUT
I
= 6 A; V
OUT
V
= -13 V; I
CC
= 25 °C
T
j
= 20 mA; I
CC
OFF-state: V
= V
V
IN
ON-state: V
= 0 A
I
OUT
V
= V
IN
= 25 °C
T
j
= V
V
IN
= 125 °C
T
j
OUT
OUT
OUT
= 5 V; Tj = 25 °C13
CC
= -6 A;
OUT
= 0 A414652V
OUT
= 13 V; Tj = 25 °C;
CC
= V
CC
= 0 V
SENSE
= 13 V; V
IN
= 5 V;
= 0 V; VCC = 13 V;
= 0 V; VCC = 13 V;
0.5V
10mΩ
2 5 µA
1.53mA
00.01 3
05
mΩI
µA
Table 6.Switching (V
= 13 V, Tj = 25 °C)
CC
SymbolParameter Test conditionsMin. Typ.Max.Unit
R
= 2.2 Ω
Turn-on delay time
Turn-off delay time
Turn-on voltage
/dt)
on
slope
Turn-off voltage
/dt)
off
slope
(dV
(dV
t
d(on)
t
d(off)
OUT
OUT
Switching energy
W
ON
losses at turn-on
)
(t
won
Switching energy
W
OFF
losses at turn-off
)
(t
woff
L
(see Figure 6)
= 2.2 Ω
R
L
(see Figure 6)
R
= 2.2 Ω -(see Figure 26)- V/µs
L
= 2.2 Ω -(see Figure 28)- V/µs
R
L
= 2.2 Ω
R
L
(see Figure 6)
= 2.2 Ω
R
L
(see Figure 6)
-40 -µs
-28 -µs
-2 -mJ
-0.6 -mJ
Doc ID 15984 Rev 29/37
Electrical specificationsVN5E010AH
Table 7.Logic inputs
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
I
V
I
IH
V
I(hyst)
V
ICL
V
CSDL
I
CSDL
V
CSDH
I
CSDH
V
CSD(hyst)
V
CSCL
Table 8.Protection and diagnostics
Low-level input voltage0.9V
IL
Low-level input currentVIN = 0.9 V1µA
IL
High-level input voltage2.1V
IH
High-level input currentV
= 2.1 V10µA
IN
Input hysteresis voltage0.25V
I
= 1 mA5.57
Input clamp voltage
IN
= -1 mA-0.7
I
IN
Low-level CS_DIS voltage0.9V
Low-level CS_DIS currentV
= 0.9 V1µA
CSD
High-level CS_DIS voltage2.1V
High-level CS_DIS currentV
= 2.1 V10µA
CSD
CS_DIS hysteresis voltage0.25V
I
= 1 mA5.57
CS_DIS clamp voltage
CSD
= -1 mA-0.7
I
CSD
(1)
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
= 13 V6085120
I
T
T
V
DEMAG
V
1. To ensure long term reliability under heavy overload or short-circuit conditions, protection and related
Short-circuit current
limH
Short-circuit current
I
limL
during thermal cycling
Shutdown temperature150175200°C
TSD
T
Reset temperatureTRS + 1 TRS + 5°C
R
Thermal reset of status135°C
T
RS
Thermal hysteresis
HYST
(T
TSD
- TR)
Turn-off output voltage
clamp
Output voltage drop
ON
limitation
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles
CC
5 V < V
V
TR < Tj < T
I
OUT
< 28 V120
CC
=13 V;
CC
TSD
= 2 A; V
IN
L = 6 mH
= 0.5 A;
I
OUT
= -40 °C to 150 °C
T
j
= 0;
V
CC
- 41 V
A
21A
7°C
CC
- 46 V
- 52V
CC
25mV
10/37 Doc ID 15984 Rev 2
VN5E010AHElectrical specifications
Table 9.Current sense (8 V < V
SymbolParameterTest conditionsMin.Typ.Max.Unit
K
K
dK1/K
K
dK2/K
K
dK3/K
I
0
1
2
3
OUT/ISENSE
I
OUT/ISENSE
(1)
Current sense ratio drift
1
I
OUT/ISENSE
(1)
Current sense ratio drift
2
I
OUT/ISENSE
(1)
Current sense ratio drift
3
< 18 V)
CC
I
= 0.25 A; V
OUT
SENSE
Tj = -40 °C to 150 °C
= 25 °C to 150 °C
T
j
I
= 6 A; V
OUT
= -40 °C to 150 °C
T
j
= 25 °C to 150 °C
T
j
I
= 6 A; V
OUT
=0V;
V
CSD
SENSE
SENSE
Tj = -40 °C to 150 °C
I
= 10 A; V
OUT
SENSE
Tj = -40 °C to 150 °C
= 25 °C to 150 °C
T
j
I
= 10 A; V
OUT
V
= 0 V;
CSD
= -40 °C to 150 °C
T
j
I
= 25 A; V
OUT
= -40 °C to 150 °C
T
j
= 25 °C to 150 °C
T
j
I
= 25 A; V
OUT
= 0 V;
V
CSD
SENSE
SENSE
SENSE
Tj = -40 °C to 150 °C
= 0.5 V
= 0.5 V
= 0.5 V;
= 4 V
= 4 V;
= 4 V
= 4 V;
3000
7410
12000
3000
7410
11600
5350
5510
6740
6740
8500
7745
-1515%
5850
5800
6570
6570
7690
7195
-1111%
5915
5850
6420
6420
7000
6755
-88%
I
SENSE0
Analog sense leakage
current
= 0 A; V
I
OUT
V
= 5 V; V
CSD
= -40 °C to 150 °C
T
j
I
= 0 A; V
OUT
= 0 V; V
V
CSD
= -40 °C to 150 °C
T
j
I
= 2 A; V
OUT
= 5 V; VIN = 5 V;
V
CSD
SENSE
=0 V;
IN
SENSE
= 5 V;
IN
SENSE
= 0 V;
= 0 V;
= 0 V;
01
02
µA
1
Tj = -40 °C to 150 °C
Open load ON-state
I
OL
current detection
threshold
V
SENSE
V
SENSEH
I
SENSEH
Max analog sense
output voltage
Analog sense output
(2)
voltage in fault condition
Analog sense output
(2)
current in fault condition
VIN = 5 V, 8 V < V
= 5 µA
I
SENSE
I
= 18 A; R
OUT
V
V
CC
CC
= 13 V; R
= 13 V; V
SENSE
SENSE
SENSE
< 18 V
CC
580mA
= 3.9 kΩ 5V
= 3.9 kΩ8V
= 5 V9mA
Doc ID 15984 Rev 211/37
Electrical specificationsVN5E010AH
Table 9.Current sense (8 V < V
< 18 V) (continued)
CC
SymbolParameterTest conditionsMin.Typ.Max.Unit
t
DSENSE1H
t
DSENSE1L
t
DSENSE2H
Δ
t
DSENSE2H
t
DSENSE2L
Delay response time
from falling edge of
CS_DIS pin
Delay response time
from rising edge of
CS_DIS pin
Delay response time
from rising edge of
IN pin
Delay response time
between rising edge of
output current and rising
edge of current sense
Delay response time
from falling edge of
IN pin
V
1.5 A < I
I
(see Figure 4)
V
1.5 A < I
I
(see Figure 4)
V
1.5 A < I
I
(see Figure 4)
V
I
I
I
V
1.5 A < I
I
(see Figure 4)
SENSE
SENSE
SENSE
SENSE
SENSE
SENSE
SENSE
SENSE
= 90% of I
OUT
OUTMAX
SENSE
SENSE
< 4 V,
< 25 A
OUT
= 90% of I
SENSE max
< 4 V,
< 25 A
OUT
=10% of I
SENSE max
< 4 V,
< 25 A
OUT
=90% of I
SENSE max
<4V,
= 90% of I
SENSEMAX,
OUTMAX
= 3A (see Figure 7)
< 4 V,
< 25 A
OUT
=10% of I
SENSE max
50100µs
520µs
270600µs
310µs
100250µs
1. Parameter guaranteed by design, it is not tested.
2. Fault condition includes: power limitation, over-temperature and open load OFF-state detection.
Table 10.Open load detection (8 V < V
CC
< 18 V)
SymbolParameterTest conditionsMin.Typ.Max.Unit
Open-load OFF-state
V
voltage detection
OL
= 0 V2
V
IN
threshold
See
Figure 5
4V
Output short-circuit to
detection delay at
t
DSTKON
V
CC
See Figure 51801200µs
turn-off
I
L(off2)r
I
L(off2)f
OFF-state output
current at V
OUT
OFF-state output
current at V
OUT
= 4 V
= 2 V
= 0 V; V
V
IN
V
rising from 0 V to 4 V
OUT
= 0 V; V
V
IN
V
falling from VCC to 2 V
OUT
SENSE
SENSE
= 0 V
= V
SENSEH
-12090µA
;
-5090µA
Delay response from
= 4 V; V
t
d_vol
output rising edge to
V
SENSE
rising edge in
open-load
V
OUT
V
SENSE
= 90% of V
IN
= 0 V
SENSEH
20µs
12/37 Doc ID 15984 Rev 2
VN5E010AHElectrical specifications
Figure 4.Current sense delay characteristics
INPUT
CS_DIS
LOAD CURRENT
CURRENT SENSE
t
DSENSE2H
t
DSENSE1L
t
DSENSE1H
t
DSENSE2L
Figure 5.Open-load OFF-state delay timing
OUTPUT STUCK TO V
V
IN
V
CS
Figure 6.Switching characteristics
V
OUT
dV
OUT
/dt
(on)
t
Won
80%
t
r
10%
CC
V
t
DSTKON
t
Woff
90%
t
f
OUT
V
SENSEH
> V
dV
OL
OUT
/dt
(off)
t
INPUT
t
d(on)
t
d(off)
t
Doc ID 15984 Rev 213/37
Electrical specificationsVN5E010AH
Figure 7.Delay response time between rising edge of ouput current and rising
edge of current sense (CS enabled)
V
IN
Δ
t
DSENSE2H
t
I
OUT
I
SENSE
90% I
OUTMAX
I
OUTMAX
I
SENSEMAX
t
90% I
SENSEMAX
t
Figure 8.Output voltage drop limitation
V
cc-Vout
T
=150oC
j
V
on
V
on/Ron(T)
T
=25oC
j
T
=-40oC
j
I
out
14/37 Doc ID 15984 Rev 2
VN5E010AHElectrical specifications
Figure 9.I
I
OUT/ISENSE
12800
11600
10400
9200
8000
6800
5600
4400
3200
2000
OUT/ISENSE
vs. I
OUT
A
B
C
D
E
-2 1 4 7 10131619222528
I
(A)
OUT
A: Max, Tj = -40 °C to 150 °C
B: Max, T
C: Typical, T
= 25 °C to 150 °C
j
= -40 °C to 150 °C
j
D: Min, T
E: Min, Tj = -40 °C to 150 °C
= 25 °C to 150 °C
j
Figure 10. Maximum current sense ratio drift vs. load current
(1)
dK/K (%)
20
15
A
10
5
0
-5
-10
B
-15
-20
4710131619222528
I
OUT
(A)
A: Max, Tj = -40 °C to 150 °CB: Min, Tj = -40 °C to 150 °C
1. Parameter guaranteed by design; it is not tested.
Doc ID 15984 Rev 215/37
Electrical specificationsVN5E010AH
Table 11.Truth table
ConditionsInputOutputSENSE (V
Normal operation
CSD
L
H
L
H
0
Nominal
= 0 V)
(1)
Overtemperature
Undervoltage
Overload
Short-circuit to GND
(power limitation)
Open load OFF-state
(with external pull-up)
Short-circuit to V
CC
(external pull-up
disconnected)
Negative output voltage
clamp
1. If the V
and external circuit.
is high, the SENSE output is at a high-impedance, its potential depends on leakage currents
CAll functions of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device are not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
Doc ID 15984 Rev 217/37
Electrical specificationsVN5E010AH
2.4 Waveforms
Figure 11. Normal operation
INPUT
INPUT
Nominal loadNominal load
Nominal loadNominal load
I
I
OUT
OUT
V
V
SENSE
SENSE
V
V
CS_DIS
CS_DIS
Figure 12. Overload or short to GND
INPUT
INPUT
I
>
I
>
LimH
LimH
I
I
OUT
OUT
V
V
SENSE
SENSE
V
V
CS_DIS
CS_DIS
Power Limitation
Power Limitation
I
I
LimL
LimL
Thermal cycling
Thermal cycling
>
>
18/37 Doc ID 15984 Rev 2
VN5E010AHElectrical specifications
Figure 13. Intermittent overload
INPUT
INPUT
I
I
OUT
OUT
V
V
SENSE
SENSE
V
V
CS_DIS
CS_DIS
I
I
LimH
LimH
V
V
SENSEH
SENSEH
>
>
>
>
Overload
Overload
I
I
LimL
LimL
Nominal load
>
>
Nominal load
Figure 14. OFF-state open-load with external circuitry
INPUT
INPUT
V
> V
V
> V
OUT
OL
OUT
OL
V
V
OL
OL
t
t
DSTK(on)
DSTK(on)
V
V
SENSEH
SENSEH
>
>
V
V
SENSE
SENSE
V
V
OUT
OUT
I
I
OUT
OUT
V
V
CS_DIS
CS_DIS
Doc ID 15984 Rev 219/37
Electrical specificationsVN5E010AH
Figure 15. Short to V
V
V
OUT
OUT
I
I
OUT
OUT
V
V
CS_DIS
CS_DIS
CC
Resistive
Resistive
Short to V
Short to V
V
V
OL
OL
t
t
DSTK(on)
DSTK(on)
CC
CC
Hard
Hard
Short to V
Short to V
V
> V
V
> V
OUT
OUT
t
t
DSTK(on)
DSTK(on)
OL
OL
CC
CC
Figure 16. TJ evolution in overload or short to GND
INPUT
INPUT
Self-limitation of fast thermal transients
Self-limitation of fast thermal transients
T
T
J_START
J_START
T
T
J
J
I
>
I
>
LimH
LimH
I
I
OUT
OUT
Power Limitation
Power Limitation
T
T
TSD
TSD
T
T
R
R
< I
< I
T
T
HYST
HYST
LimL
LimL
20/37 Doc ID 15984 Rev 2
VN5E010AHElectrical specifications
2.5 Electrical characteristics curves
Figure 17. OFF-state output currentFigure 18. High-level input current
Iloff [ nA]
6000
5000
4000
3000
2000
1000
0
-50-250255075100 125 150 175
Tc [°C]
Iih [uA]
5
4.5
4
Vin= 2.1V
3.5
3
2.5
2
1.5
1
0.5
0
-50-250255075100125 150175
Tc [°C]
Figure 19. Input clamp voltageFigure 20. Low-level input voltage
Vicl [V]
7
6.8
6.6
Iin= 1mA
6.4
6.2
6
5.8
5.6
5.4
5.2
5
-50-250255075100125150 175
Tc [°C]
Vil [V ]
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50-250255075100 125150 175
Tc [°C]
Figure 21. High-level input voltageFigure 22. Input hysteresis voltage
Vih [V]
4
3.5
3
2.5
2
1.5
1
0.5
0
-50-250255075100125 150175
Tc [°C]
Vihyst [V]
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-50-250255075100 125150 175
Tc [°C]
Doc ID 15984 Rev 221/37
Electrical specificationsVN5E010AH
V
Figure 23. ON-state resistance vs. T
Ron [m Ohm ]
80
70
case
Figure 24. ON-state resistance vs. V
Ron [m Ohm ]
30
25
60
50
40
Iout= 6A
Vcc= 13V
30
20
15
10
20
10
0
-50-250255075100125150 175
Tc [°C]
5
0
0510152025303540
Vcc [V]
Figure 25. Undervoltage shutdownFigure 26. Turn-on voltage slope
Vusd [V]
16
14
12
10
8
6
4
2
0
-50-250255075100125150175
Tc [°C]
(dV out /dt)On [V/m s]
1000
900
800
700
Vcc= 13V
Rl= 13 Ω
600
500
400
300
200
100
0
-50-250255075100125 150 175
Tc [°C]
CC
Tc= 150°C
Tc= 125°C
Tc= 25°C
Tc= -40°C
Figure 27. I
LIMH
Vs. T
case
Ilim h [A]
100
90
cc= 13V
80
70
60
50
40
-50-250255075100 125 150175
Tc [°C]
22/37 Doc ID 15984 Rev 2
Figure 28. Turn-off voltage slope
(dVout/dt)Off [V/ms]
1000
900
800
700
600
500
400
300
200
100
0
-50-250255075100 125 150175
Vcc= 13V
Rl= 13 Ω
Tc [°C]
VN5E010AHElectrical specifications
Figure 29. High-level CS_DIS voltageFigure 30. CS_DIS clamp voltage
Vcsdh [V]
4
3.5
3
2.5
2
1.5
1
0.5
0
-50-250255075100125150175
Tc [°C]
Vcsdcl [V]
10
9
8
Iin= 1mA
7
6
5
4
3
2
1
0
-50-250255075100125150175
Tc [°C]
Figure 31. Low-level CS_DIS voltage
Vcsdl [V]
4
3.5
3
2.5
2
1.5
1
0.5
0
-50-250255075100125150175
Tc [°C]
Doc ID 15984 Rev 223/37
Application informationVN5E010AH
3 Application information
Figure 32. Application schematic
+5V
MCU
R
prot
R
prot
R
prot
R
SENSE
C
ext
CS_DIS
IN
CS
45V
3.1 Load dump protection
Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
V
max DC rating. The same applies if the device is subject to transients on the VCC line
CC
that are greater than the ones shown in the ISO 7637-2 2004 (E) table.
GND
V
20V
CC
OUT
D
ld
3.2 MCU I/Os protection
When negative transients are present on the VCC line, the control pins is pulled negative to
approximatly -1.5 V. ST suggests to insert a resistor (R
microcontroller I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (input levels compatibility) with the latch-up limit of
microcontroller I/Os.
Equation 1
-V
CCpeak
Calculation example:
For V
CCpeak
75 Ω ≤ R
= - 1.5 V; I
≤ 240 kΩ.
prot
latchup
Recommended values: R
24/37 Doc ID 15984 Rev 2
≥ 20 mA; V
=10 kΩ, C
prot
/ I
latchup
≤ R
OHμC
EXT
≤ (V
prot
≥ 4.5 V
=10 nF.
) in line to prevent the
prot
- VIH ) / I
OHμC
IHmax
VN5E010AHApplication information
3.3 Current sense and diagnostic
The current sense pin performs a double function (see Figure 33: Current sense and
diagnostic):
●Current mirror of the load current in normal operation, delivering a current
proportional to the load one according to a know ratio K
The current I
external resistor R
minimum (see parameter V
can be easily converted to a voltage V
SENSE
. Linearity between I
SENSE
SENSE
in Table 9: Current sense (8 V < V
OUT
and V
current sense accuracy depends on the output current (refer to current sense electrical
characteristics Table 9: Current sense (8 V < V
●Diagnostic flag in fault conditions, delivering a fixed voltage V
maximum current I
SENSEH
in case of the following fault conditions (refer to
< 18 V)).
CC
Table 11: Truth table):
–Power limitation activation
–Overtemperature
–Short to V
in OFF-state
CC
–Open load in OFF-state with additional external components.
A logic level high on CS_DIS pin sets at the same time all the current sense pins of the
device in a high-impedance state, thus disabling the current monitoring and diagnostic
detection. This feature allows multiplexing of the microcontroller analog inputs by sharing of
sense resistance and ADC line among different devices.
.
X
SENSE
by means of an
SENSE
is ensured up to 5 V
CC
SENSEH
< 18 V)). The
up to a
Figure 33. Current sense and diagnostic
V
PU_CMD
R
I
Loff2r
I
Loff2f
R
PU
PU
Load
PD
V
BAT
V
CC
INPUTn
Main MOSn
+
-
V
GND
OL
OUTn
41V
I
OUT/KX
I
SENSEH
V
V
SENSE
CS_DIS
CURRENT
SENSEn
R
PROT
To uC ADC
R
SENSE
Overtemperature
OL OFF
Pwr_Lim
SENSEH
Doc ID 15984 Rev 225/37
Application informationVN5E010AH
(
)
3.3.1 Short to VCC and OFF-state open-load detection
Short to V
A short-circuit between V
V
SENSEH
during the ON-state depending on the nature of the short-circuit.
OFF-state open-load with external circuitry
CC
and output is indicated by the relevant current sense pin set to
CC
during the device OFF-state. Small or no current is delivered by the current sense
Detection of an open load in off mode requires an external pull-up resistor R
the output to a positive supply voltage V
It is preferable V
to be switched off during the module standby mode in order to avoid the
PU
PU
.
connecting
PU
overall standby current consumption to increase in normal conditions, i.e. when load is
connected.
An external pull-down resistor R
connected between output and GND is mandatory to
PD
avoid misdetection in case of floating outputs in OFF-state (see Figure 33: Current sense
and diagnostic).
R
must be selected in order to ensure V
PD
OUT < VOLmin
unless pulled-up by the external
circuitry:
Equation 2
minOLf)off(LPD
R
≤ 22 kΩ is recommended.
PD
OUT
OFF_upPull
−
VVIRV
22=<⋅=
For proper open load detection in OFF-state, the external pull-up resistor must be selected
according to the following formula:
Equation 3
()
V
OUT
−
For the values of V
OLmin ,VOLmax, IL(off2)r
< VCC < 18 V)).
26/37 Doc ID 15984 Rev 2
=
ON_upPull
IRRVR
⋅⋅−⋅
r)off(LPDPUPUPD
()
and I
RR
+
PDPU
(see Table 10: Open load detection (8 V
L(off2)f
maxOL
VV
42=>
VN5E010AHApplication information
3.4 Maximum demagnetization energy (V
Figure 34. Maximum turn-off current versus inductance
100
A
B
C
10
I (A)
1
0, 1110100L (mH)
=13.5 V)
CC
(1)
A
B
C
VIN, I
: T
: T
: T
= 150 °C (single pulse)
jstart
= 100 °C (repetitive pulse)
jstart
= 125 °C (repetitive pulse)
jstart
L
DemagnetizationDemagnetizationDemagnetization
t
1. Values are generated with R
In case of repetitive pulses, T
the temperature specified above for curves A and B.
=0 Ω.
L
(at beginning of each demagnetization) of every pulse must not exceed
jstart
Doc ID 15984 Rev 227/37
Package and PC board thermal dataVN5E010AH
4 Package and PC board thermal data
4.1 HPAK thermal data
Figure 35. PC board
1. Layout condition of Rth and Zth measurements (PCB FR4 area = 58 mm x 58 mm,
PCB thickness =1.8 mm, Cu thickness = 70 µm, Copper areas: from minimum pad lay-out to 8 cm
Figure 36. R
thj-amb
(1)
vs. PCB copper area in open box free air condition
RTHj_amb(°C/W)
70
65
2
).
60
55
50
45
40
35
30
0246810
PCB Cu heatsink area (cm^2)
28/37 Doc ID 15984 Rev 2
VN5E010AHPackage and PC board thermal data
Figure 37. HPAK thermal impedance junction ambient single pulse
ZTH (°C/W)
100
Cu=8 cm2
Cu=2 cm2
Cu=foot print
10
1
0.1
0.0010.010.11101001000
Time (s)
Figure 38. Thermal fitting model of a single-channel HSD in HPAK
1. The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
(1)
Doc ID 15984 Rev 229/37
Package and PC board thermal dataVN5E010AH
Equation 4: pulse calculation formula
where δ = tP/T
Table 15.Thermal parameter
Area/island (cm2)Footprint48
R1 (°C/W)0.01
R2 (°C/W)0.15
R3 (°C/W)0.5
R4 (°C/W)8
R5 (°C/W)282212
R6 (°C/W)312516
C1 (W.s/°C)0.005
C2 (W.s/°C)0.05
C3 (W.s/°C)0.1
C4 (W.s/°C)0.4
Z
THδ
RTHδ Z
THtp
1 δ–()+⋅=
C5 (W.s/°C)0.81.43
C6 (W.s/°C)369
30/37 Doc ID 15984 Rev 2
VN5E010AHPackage and packing information
5 Package and packing information
5.1 ECOPACK
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
®
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
5.2 HPAK mechanical data
Figure 39. HPAK package dimension
.
Doc ID 15984 Rev 231/37
Package and packing informationVN5E010AH
Table 16.HPAK mechanical data
Data book mm
Ref. dim
Nom.Min.Max.
A2.202.40
A10.901.10
A20.030.23
b0.400.55
b45.205.40
c0.450.60
c20.480.60
D6.006.20
D15.10
E6.406.60
E15.20
e0.85
e11.601.80
e23.303.50
e35.005.20
H9.3510.10
L1
(L1)2.80
L20.80
L40.601.00
R0.20
V20°8°
32/37 Doc ID 15984 Rev 2
VN5E010AHPackage and packing information
5.3 HPAK suggested land pattern
Figure 40. HPAK suggested pad layout
(1)
All dimensions are in mm.
1. The land pattern proposed is not intended to overrule User's PCB design, manufacturing and soldering
process rules
Doc ID 15984 Rev 233/37
Package and packing informationVN5E010AH
5.4 Packing information
The devices can be packed in tube or tape and reel shipments (see Table 17: Device
02-Oct-20092Updated Table 10: Open load detection (8 V < VCC < 18 V).
36/37 Doc ID 15984 Rev 2
VN5E010AH
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