ST TEA2025 User Manual
TEA2025
Fi
STEREO AUDIO AMPLIFIER
1 FEATURES
DUAL OR BRIDGE CONNECTION MODES
FEW EXTERNAL COMPONENTS
SUPPLY VOLTAGE DOWN TO 3V
HIGH CHANNEL SEPARATION
VERY LOW SWITCH ON/OFF NOISE
MAX GAIN OF 45dB WITH ADJUST
EXTERNAL RESISTOR
SOFT CLIPPING
THERMAL PROTECTION
3V < VCC < 15V
P = 2 · 1W, V
P = 2 · 2.3W, V
P = 2 · 0.1W, V
Figure 2. Block Diagram
= 6V, RL = 4Ω
CC
= 9V, RL = 4Ω
CC
= 3V, RL = 4Ω
CC
gure 1. Package
PowerDIP16
SO20
Table 1. Order Codes
Part Number Package
TEA2025B PowerDIP 12+2+2
TEA2025D SO20 12+4+4
TEA2025D013TR SO16 in Tape & Reel
2 DESCRIPTION
The TEA2025B/D is a monolithic integrated circuit
in 12+2+2 Powerdip and 12+4+4 SO, intended for
use as dual or bridge power audio amplifier portable radio cassette players.
OUT 1BOOT 1GNDGNDFEEDIN 1+GND(Sub)
April 2010
SVR
IN 2+
THERMAL
PROTECT.
START
CIRCUIT
D94AU120
50Ω
-
+
2
+
50Ω
FEED GND GND BOOT 2 OUT 2
10KΩ
DECOUPLING
10KΩ
11
5KΩ
2
50Ω
V
S+
BRIDGE
Rev. 3
1/11
TEA2025
Table 2. Absolute Maximum Ratings
Symbol Parameter Value Unit
V
I
O
T
T
stg
Supply Voltage 15 V
S
Ouput Peak Current 1.5 A
Junction Temperature 150 °C
J
Storage Temperature 150 °C
Figure 3. PIN CONNECTION POWERDIP12+2+2
Figure 4. PIN CONNECTION SO12+4+4
FEEDBACK
Table 3. Thermal Data
Symbol Description
R
th j-case
R
th j-amb
Note: 1. The R
Thermal Resistance Junction-case Max 15 15 °C/W
Thermal Resistance Junction-ambient Max 65 60 °C/W
is measured with 4sq cm copper area heatsink
2. The R
th j-amb
is measured on devices bonded on a 10 x 5 x 0.15cm glass-epoxy substrate with a 35µm thick copper surface of 5 cm
th j-amb
BRIDGE
OUT 2
BOOT 2
GND
GND
GND
GND
IN 2(+)
SVR 10 GND(Sub)11
1
2
3
4
5
6
7
8
9 IN 1(+)
D94AU119
20
19
18
17
16
15
14
13
12
V
CC
OUT 1
BOOT 1
GND
GND
GND
GND
FEEDBACK
SO 12+4+4
(1)
PDIP 12+2+2
(2)
Unit
2
2/11
TEA2025
Table 4. Electrical Characteristcs (T
= 25°C, VCC = 9V, Stereo unless otherwise specified)
amb
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
S
I
Q
V
O
A
V
Supply Voltage 3 12 V
Quiescent Current 35 50 mA
Quiescent Output Voltage 4.5 V
Voltage Gain Stereo 43 45 47 dB
Bridge 49 51 53 dB
∆A
P
R
j
O
Voltage Gain Difference ±1 dB
V
Input Impedance 30 KΩ
Output Power (d = 10%) Stereo 8 (per channel) 9V 4Ω 1.7 2.3 W
9V 8Ω 1.3 W
6V 4Ω 0.7 1 W
6V 8Ω 0.6 W
6V 16Ω 0.25 W
6V 32Ω 0.13 W
3V 4Ω 0.1 W
3V 32Ω 0.02 W
12V 8Ω 2.4 W
Bridge 9V 8Ω 4.7 W
6V 4Ω 2.8 W
6V 8Ω 1.5 W
3V 16Ω 0.18 W
3V 32Ω 0.06 W
dDistortion Vs = 9V; R
SVR Supply Voltage Rejection f = 100Hz, V
E
N(IN)
Input Noise Voltage RG = 0 1.5 3 mV
= 10 4Ω 36mV
R
G
CT Cross-Talk f = 1KHz, R
= 4Ω Stereo
L
Bridge
= 0.5V, Rg = 0 40 46 dB
R
= 10KΩ 40 52 dB
g
0.3
0.5
1.5 %
Table 5.
Te r m . N° (PDIP)1 23456 7 8910111213141516
DC VOLT (V) 0.04 4.5 8.9 0 0 0.6 0.04 8.5 0 0.04 0.6 0 0 8.9 4.5 9
3/11
TEA2025
Figure 5. Bridge Application (Powerdip)
Figure 6. Stereo Application (Powerdip)
Figure 8. Output Voltage vs. Supply Voltage
Figure 9. Output Power vs. Supply Voltage
(THD = 10%, f = 1KHz)
Figure 7. Supply Current vs. Supply Voltage
= 4Ω))
(R
L
4/11
Figure 10. THD versus Output Power (f = 1KHz,
V
= 6V)
S
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