ST STTH8S06 User Manual

Features

■ Ultrafast recovery

■ Low reverse recovery current

■ Reduces losses in diode and switching

transistor

■ Low thermal resistance

■ Higher frequency operation

■ Insulated TO-220FPAC version

– Insulation voltage = 1500 V rms – Package capacitance = 12 pF

STTH8S06

Turbo 2 ultrafast high voltage rectifier

K

A

K

TO-220AC

STTH8S06D

A

K

TO-220FPAC

STTH8S06FP

Description

ST's STTH8S06 is a state of the art ultrafast recovery diode. By the use of 600 V Pt doping planar technology, this diode will out-perform the power factor corrections circuits operating in hardswitching conditions. The extremely low reverse recovery current of the STTH8S06, reduces significantly the switching power losses of the MOSFET and thus increases the efficiency of the application. This leads designers to reduce the size of their heatsinks.

This device is also intended for applications in power supplies and power conversions systems, motor drive, and other power switching applications.

Table 1. Device summary

I

F(AV)

V

RRM

(typ.) 4.4 A

I

RM

(max) 175 °C

T

j

V

(typ) 1.5 V

F

(typ) 12 ns

t

rr

8 A

600 V

December 2007 Rev 1 1/8

www.st.com

8

Characteristics STTH8S06

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(AV)

I

FSM

T

Table 3. Thermal parameter

Repetitive peak reverse voltage 600 V

Average forward current 8 A

Surge non repetitive forward current tp = 10 ms 60 A

Storage temperature range -65 to + 175 °C

stg

T

Maximum operating junction temperature 175 °C

j

Symbol Parameter Maximum Unit

TO-220AC 3.0

R

th(j-c)

Table 4. Static electrical characteristics

Junction to case

TO220FPAC 5.5

°C/W

Symbol Parameter Test conditions Min. Typ Max. Unit

T

= 25 °C

I

Reverse leakage current

R

j

Tj= 125 °C 25 200

= 600 V

V

R

Tj = 25 °C

V

Forward voltage drop

F

= 125 °C 1.5 1.9

IF = 8 A

T

j

20

3.4

To evaluate the maximum conduction losses use the following equation: P = 1.20 x I

Table 5. Dynamic electrical characteristics

Symbol Parameter

F(AV)

+ 0.087 I

F2(RMS)

Test conditions

Min. Typ Max. Unit

µA

V

t

Reverse recovery time IF = 1 A, dIF/dt = - 200 A/µs, VR = 30 V 12 18 ns

rr

Reverse current

I

S

RM

T

Softness factor 1 -

factor

Reverse recovery charges 17 nC

Q

rr

Reverse current

I

RM

Softness factor 0.3 -

factor

Reverse recovery charges 90 nC

Q

rr

= 25 °C

j

T

= 125 °C

j

I

F

V

I

F

VR = 200 V

2/8

= 8 A, dIF/dt = - 200 A/µs,

= 200 V

R

= 8 A, dIF/dt = - 200 A/µs,

1.6 2.2 A

4.4 6.0 A

STTH8S06 Characteristics

Figure 1. Forward voltage drop versus

forward current

Figure 2. Relative variation of thermal

impedance junction to case versus pulse duration (TO-220AC)

I (A)

FM

80 75 70 65 60 55 50 45 40 35 30 25 20 15 10

5 0

012345 67

(maximum values)

T =150°C

j

(typical values)

T =150°C

j

V (V)

FM

T =25°C

j

(maximum values)

Figure 3. Relative variation of thermal

impedance junction to case versus

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

δ

T

=tp/T

Figure 4. Peak reverse recovery current

versus dI

/dt (typical values)

F

tp

pulse duration(TO-220FPAC)

I (A)

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

δ=0.5

0.6

0.5

0.4

δ=0.2

0.3

δ=0.1

0.2

0.1

Single pulse

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

t (s)

p

δ

=tp/T

T

tp

RM

16 15

V =200V

R

T =125°C

j

14 13 12 11 10

9 8 7 6 5 4 3 2 1 0

0 200 400 600 800 1000

I =0.5 x I

F F(AV)

dI /dt(A/µs)

F

I=I

F F(AV)

I =2 x I

F F(AV)

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