Siemens TLE 6252 G User Manual

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Fault Tolerant Differential CAN Transceiver TLE 6252 G

Target Data

Features

• Data transmission rate up to 125 kBaud

• Very low current consumption in stand-by and
sleep mode

• Optimized EMI behavior due to limited and
symmetric dynamic slopes of CANL and
CANH signals

• Switches to single-wire mode during bus line
failure events

• Supports one-wire transmission mode with ground offset voltages up to 1.5 V

• Preventation from bus occupation in case of CAN controller failure

• Fully-integrated receiver filters

• Short-circuit detection to battery and ground in 12 V powered systems

• Thermal protection

• Bus line error protection against transients in automotive environment

P-DSO-14-2

Type Ordering Code Package

▼ TLE 6252 G Q67006-A9337 P-DSO-14-2 (SMD)

▼ New type

Functional Description

The CAN Transceiver works as the interface between the CAN protocol c ontroller and
the physical differential CAN bus. Figure 1 shows the principle configu ration of a CA N
network.

The TLE 6252 is optimized for low-speed data transmission (up to 125 kBaud) in
automotive and industrial applications.

In normal operation mode a differential sig nal is transmitted/rec eived. When bus wiring
failures are detected t he device au tomaticall y switche s in single -wire mod e to maintain
communication.

While no data is transferred, the power consumption c an be minimized by multiple low
power modes.

Semiconductor Group 1 1998-11-01

TLE 6252 G

Local Area 1

Controller 1

RxD

1

TxD

Transceiver 1

Figure 1 CAN Network Example

1

Bus Line

Local Area 2

Controller 2

RxD

2

Transceiver 2

TxD

2

AES02410

Semiconductor Group 2 1998-11-01

Pin Configuration

(top view)

TLE 6252 G

P-DSO-14-2

Figure 2

INH

TxD

RxD

NERR

NSTB

ENT

WAKE

13
12

11

10

9
87

V

BAT

GND
CANL
CANH

V

CC

RTL
RTH

AEP02411

114
2
3
4
5
6

Semiconductor Group 3 1998-11-01

Table 1 Pin Definitions and Functions
Pin No. Symbol Function

1INHInhibit output;

For controlling an external 5 V regulator

2TxDTransmit data input;

LOW: bus is dominant, HIGH: bus is recessive

3RxDReceive data output;

LOW: bus is dominant

4 NERR Error flag output;

LOW: bus error

5 NSTB Not stand-by input;

Digital control signal for low power modes

TLE 6252 G

6ENTEnable transfer input;

Digital control signal for low power modes

7 WAKE Wake-up input;

If level of

V

changes the device initials a wake-up from

WAKE

sleep mode by switching INH HIGH

8RTHTermination resistor output;

For CANH line, controlled by internal failure management

9RTLTermination resistor output;

For CANL line, controlled by internal failure and mode
management

10

V

CC

Supply voltage;

+5 V

11 CANH Bus line H;

HIGH: dominant state, external pull-down for termination

12 CANL Bus line L;

LOW: dominant state, external pull-up for termination
13 GND Ground
14

V

BAT

Battery voltage;

+ 12 V

Semiconductor Group 4 1998-11-01

Functional Block Diagram

TLE 6252 G

RTL

CANH

CANL

RTH

9

11

12

8

Filter

L Termination

Driver

Temperature

Protection

H Termination

Failure

Management

V

CC

10

Output

Stage

V

BAT

14

2

TxD

3

RxD

Receiver

ENT

5

6

NSTB

Figure 3 Block Diagram

Failure Detect

Wake - Up
Time - Out

Stand - By

Sleep

Wake - Up

Contol Unit

13

GND

4

NERR

1

INH

7

WAKE

AEB02412

Semiconductor Group 5 1998-11-01

TLE 6252 G

General Operation Modes

In addition to the normal operation mo de, the CAN transcei ver offers three mult iple l ow
power operation modes to save power when there is no bus achieved: sleep mode,
stand-by mode and VCC stand-by mode (see Table 2 and Figure 4). Via the control
inputs NSTB and ENT the operation modes are selected by the CAN controller.

In sleep operation mode the l owest power consumption is achieved. To deac tivate the
external voltage reg ulat or f or 5 V supply, th e INH output is swi tch ed to high impedance
in this mode. Also CANL is pull ed-up to the batt ery voltage via the RTL output and the
pull-up paths at input pins TxD and RxD are disabled from the internal supply.

On a wake-up request either by bus line activities or by the input WAKE, the transceiver
automatically switches on the voltage regulat or (5 V supply). The WAKE input reacts to

V

rising and falling edges. As soon as

is provided, the wake-u p request can be read

CC

on both the NERR and RxD outputs, upon which the microcontroller c an activate the
normal operation mode by setting the control inputs NSTB and ENT high.

V

Bat

V

In
NERR output in this mode is set l ow wh en the su pply vo ltage at pi n

-stand-by mode the wake up request is only reported at the RxD-output. The

CC

V

was below the

bat

battery voltage threshold of 1 V.

V

When entering the normal mode the

-Flag is reseted and the N ERR becomes h igh

bat

again.

V

In addition the

-Flag is set at a first connection of the device to battery voltage. This

bat

feature is usefull e.g. when c hanging the ECU an d therefore a pre setting routine of the
microcontroller has to be started.

If either of the supply voltage drop below the specified limits, the transceiver
automatically goes to a stand-by mode.

Semiconductor Group 6 1998-11-01

TLE 6252 G

Table 2 Truth Table of the CAN Transceiver
NSTB ENT Mode INH NERR RxD RTL

V

00

stand-by

BAT

0 0 sleep mode

1)

V

bat

2)

floating switched

active LOW wa ke- up i nte rrupt if

V

is present

CC

switched
to V

V

to

BAT

BAT

0 1 go to sleep

command

10VCC stand-by

1 1 normal mode V

floating switched

3)

V

active LOW

bat

V

power-on

BAT

flag

bat

active LOW
error flag

active LOW
wake-up
interrupt

HIGH =
receive;

V

to

BAT

switched
to V

CC

switched

V

to

CC

LOW =
dominant
receive data

1)

Wake-up interrupts are releas ed w hen entering normal operation mo de.

2)

If go to sleep command was used before. ENT may turn LOW as VCC drops, without affecting internal functions.

3)

V

power-on flag will be reseted whe n ent ering normal operation mode.

BAT

Semiconductor Group 7 1998-11-01

Normal Operation

TLE 6252 G

NSTB = 0

ENT =10

V

=

CC

V

CC

NSTB ENT INH

1

=

NSTB10

=ENT

NSTB = 1

V

=

CC

NSTB INH

1

0

NSTB

=

ENT11

=

V

CC

HIGH

NSTB =
ENT

V

CC

1
=0
=

1

Go to Sleep

ENT

1

ENT INH

11

NSTB

V

CC

NSTB

V

CC

=0ENT

tt

<

h

float.

HIGH

(NSTB = 0

ENT = 0)

V

CC

=1

1=

=00 or
=

or

=

ENT

V

CC

0

NSTB

0

=ENT 1

NSTB

V

CC

1

==1

V

BAT

1

==1

NSTB
ENT

V

CC

Stand-ByStand-By

ENT

00

==1

1

=1

NSTB
ENT

V

CC

==1

1

=1

INH

HIGH

(Wake-Up from
bus or via WAKE pin)

V

BAT

tt

>

WO

Sleep Mode

t>t

1=ENT

h

NSTB

0

ENT

0

INH

float.

AED02413

Figure 4 State Diagram

The transceiver will stay in a present operating mode until a suitable condition disposes
a state change. If not otherwise defin ed all conditions are AND-com bined. The signals

V

and V

CC

show if the supply is available (e.g. VCC = 1 : VCC voltage is present). If at

BAT

minimum one supply voltage is switched on, the start-up procedure begins (not figured).
After a delay time the device changes to normal operating or stand-by mode.

Semiconductor Group 8 1998-11-01

TLE 6252 G

Bus Failure Management

The TLE 6252 detects the bus failures as de scribed in the fo llowing (Table 3, failures
listed according to ISO 11519-2) and automati cally switches to a dedicated CANH or
CANL single wire mode to maintain data transmission if necessary. Therefore, it is
equipped with one differential receiver and 4 single ended comparators, two for each bus
line. To avoid false triggering by external RF influences the single wire modes are
activated after a certain delay time. As soon as the bus failure disappears the transceiver
switches back to differential mode after another time delay. Bus failures are indicated in
the normal operation mode by setting the NERR output to LOW.

To reduce EMI the dynamic slopes of the CANL and CANH signals are both limited and
symmetric. This allows the use of an unshie lded twist ed or paral lel pair of wires for the
bus. During single-wire transmission the EMI performance of the system is degraded
from the differential mode.

The differential receiver threshold is set to – 2.8 V. This ensures correct reception in the
normal operation mode as well as in the failure cases 1, 2 and 4 with a noise margin as
high as possible. For these failures, further failure management is not necessary.
Detection of the failure cases 1, 2 and 4 is only possible when the bus is dominant.
Nevertheless, they are reported on the NERR output until transmission of the next CAN
word on the bus begins.

When one of the bus fai lures 3, 5, 6, 6a and 7 is detected, the defec tive bus wire is
disabled by switching off the affected bus termination and the respective output stage. A
wake-up from sleep mode via the bus is possible either via a dominant CANH or C ANL
line. This ensures that a wake-up is possible even if one of the failures 1 to 7 occurs.

In case the transmission data input, TxD from the CAN controller is permanently
dominant, both, the CANH and CANL transmitting stage, are deactiva ted after a delay
time. This is necessary to prevent blocking the bus by a defective protocol unit. The
transmit time out error is flagged on NERR.

Semiconductor Group 9 1998-11-01

TLE 6252 G

Table 3 Specified Wiring Failure Cases on the Bus Line

(according to ISO 11519-2)

CANH CANL

Wire Interrupted

Failure case 2:

TxD

1

CANL

CANH

V

CC

GND

RxD

2

AES02414

Failure case 1:

TxD

1

Wire Short-Circuited to GND

Failure case 4:

V

CC

Failure case 5:

1)

CANL

CANH

V

CC

GND

V

CC

RxD

2

AES02415

TxD

CANL

1

RxD

2

TxD

1

CANH

GND

GND

AES02416

CANL

CANH

GND

GND

RxD

2

AES02417

Semiconductor Group 10 1998-11-01

TLE 6252 G

Fail

V

V

Table 3 Specified Wiring Failure Cases on the Bus Line (cont’d)

(according to ISO 1151 9-2)

CANH CANL

Wire Short-Circuited to Battery

ure case 6:

Failure case 6a:

TxD

1

> 7.2

CANH

1.8 V < < 7.2 V (no ISO failure)

V

CANH

V

CC

CANL

RxD

2

CANH

V

BAT

GND

AES02418

Failure case 3:
Failure case 3a:

TxD

1

V

1.8 V < < 7.2 V (no ISO failure)

CANL

V

CANL

CANH

> 7.2 V

V

CANL

V

BAT

CC

GND

CANL Mutually Short-Circuited to CANH

1)

RxD

2

AES02419

V

Failure case 7:

CC

CANL

TxD

1

RxD

2

CANH

GND

1)

The images represent a communication between two participants of the network (see Figure 1). The controller
of the local area 1 transmits data (T×D
cases 1 to 7 occurs, the error handling enables communication th rough appreciated reactions.

) to the receiver of th e local area 2 (R×D2). When a single failur e of

1

AES02420

Semiconductor Group 11 1998-11-01

TLE 6252 G

Circuit Protection

A current limiting circuit protects the CAN trans ceiver output stages from damage by
short-circuit to positive and negative battery voltages.

The CANH and CANL pins are protected again st electrical tra nsients which may occur
in the severe conditions of automotive environments.

The transmitter output s tage ge nera tes the majority of the p ower dissipation. Therefore
it is disabled if the jun ction temperature exceeds the maximum v alue. This effectively
reduces power dissipation, and hence will lead to a lower chip temperat ure, while other
parts of the IC can remain operating.

Absolute Maximum Ratings
Parameter Symbol Limit Values Unit Notes

min. max.

Input voltage at

Logic supply voltage

V

BAT

V

CC

Input voltage at TxD, RxD, NERR,

V
V
V

NSTD and ENT
Input voltage at CANH and CANL
Input voltage at CANH and CANL

V
V

Transient voltage at CANH and CANL V
Input voltage at WAKE V
Input current at WAKE

I

Input voltage at INH, RTH and RTL V
Termination resistances at RTL and

R

RTH
Junction temperature
Storage temperature
Electrostatic discharge voltage

T
T
V

at any pin

BAT

CC
IN

BUS
BUS
BUS
IN

IN

IN
RTL/H

j

stg

esd

– 0.3 40 V –
– 0.3 6 V –
– 0.3 V

+ 0.3 V –

CC

– 10 27 V –
– 40 40 V
– 150 100 V
– V

+ 0.3 V –

BAT

– 15 – mA
– 0.3 V

+ 0.3 V –

BAT

1)

2)

3)

500 16000 Ω –

– 40 150 °C–
– 55 155 °C–
– 4000 4000 V

4)

1)

V

= 0 to 5. 5 V; V

CC

2)

See ISO 7637

3)

Negative currents flowing out of the I C .

4)

Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 kΩ resistor.

> 0 V; t < 0.1 ms; load dump

BAT

Note: Maximum ratings are absolute ratings; exceeding one of these values may cause

irreversible damage to the integrated circuit.

Semiconductor Group 12 1998-11-01

TLE 6252 G

Operating Range
Parameter Symbol Limit Values Unit Notes

min. max.

Logic input voltage

Battery input voltage V
Junction temperature

Thermal Resistance

Junction ambient

V

T

R

CC
BAT

j

thja

4.75 5.25 V –

627 V–
– 40 150 °C–

–120 K/W–

Semiconductor Group 13 1998-11-01

TLE 6252 G

Static Characteristics

V

4.75 V ≤

≤ 5.25 V; V

CC

otherwise specified). All voltages are defined with respect to ground. Positive current
flowing into the IC.

NSTB

= V

; 6 V ≤ V

CC

≤ 27 V; – 40 ≤ Tj≤ +125°C (unless

BAT

Parameter Symbol

V

Supplies

Supply current I

Supply current

V

stand-by)

(

CC

Supply current

V

stand-by)

(

BAT

Supply current

CC

, V

BAT

I
I

I
I

I

CC

CC
BAT

BAT
CC

BAT

+

+

(sleep operation mode)

Limit Values

Unit Notes

min. typ. max.

– 3.5 10 mA recessive;

TxD =

V

CC

operating mode

– 6 20 mA dominant;

TxD = 0 V; no load;
normal operating
mode

– 120 500 µA VCC = 5 V;

V

= 12 V;

BAT

T

< 90 °C

–55100µA

A

–1530µA VCC = 0 V;

V

= 12 V;

BAT

T

< 90 °C

A

; normal

Battery voltage for setting

V

BAT

––1.0VVCC stand-by mode

power-on flag
Battery voltage low time

t

pw(on)

–200–µs VCC stand-by mode

for setting power-on flag

Receiver Output R×D and Error Detection Output NERR

HIGH level output voltage

V

OH

(pin NERR)
HIGH level output voltage

V

OH

(pin RxD)
LOW level output voltage

Semiconductor Group 14 1998-11-01

V

OL

V

CC

– 0.9

V

CC

– 0.9
0–0.9VI0 = – 1.25 mA

–

–

V

V

CC

CC

V I0 = – 100 µA

V I0 = – 250 µA

Static Characteristics (cont’d)

TLE 6252 G

4.75 V ≤

V

≤ 5.25 V; V

CC

NSTB

= V

; 6 V ≤ V

CC

≤ 27 V; – 40 ≤ Tj≤ + 125 °C (unless

BAT

otherwise specified). All voltages are defined with respect to ground. Positive current
flowing into the IC.

Parameter Symbol

Limit Values

Unit Notes

min. typ. max.

Transmission Input T×D, Not Stand-By NSTB and Enable Transfer ENT

HIGH level input voltage
threshold

LOW level input voltage
threshold

HIGH level input current

V

V

I

IH

IH

IL

0.7 ×

V

CC

– V

+ 0.3

CC

– 0.3 – 0.3 ×

V

CC

–920µA Vi = 4 V

V 500 mV hysteresis

V 500 mV hysteresis

(pins NSTB and ENT)
LOW level input current

I

IL

01–µA Vi = 1 V

(pins NSTB and ENT)
HIGH level input current

I

IH

– 200 – 50 – 25 µA Vi = 4 V

(pin TxD)
LOW level input current

(pin TxD)
Forced battery voltage

stand-by mode (fail safe)
Minimum hold time for

Go-To-Sleep command

Wake-up Input WAKE

Input current
Wake-up threshold

voltage

I

IL

V

CC

t

hSLP

I

IL

V

WK(th)

– 800 – 200 – 100 µA Vi = 1 V

2.75 – 4.5 V –

42238µs–

–3 –2 –1 µA–

2.03.04.0VV

NSTB

= 0 V

Semiconductor Group 15 1998-11-01

Static Characteristics (cont’d)

TLE 6252 G

4.75 V ≤

V

≤ 5.25 V; V

CC

NSTB

= V

; 6 V ≤ V

CC

≤ 27 V; – 40 ≤ Tj≤ +125°C (unless

BAT

otherwise specified). All voltages are defined with respect to ground. Positive current
flowing into the IC.

Parameter Symbol

Limit Values

Unit Notes

min. typ. max.

Inhibit Output INH

HIGH level voltage drop

V

= V

∆

H

BAT

– V

INH

Leakage current

∆V

I

LI

H

–0.50.8VI

= – 0.18 mA;

INH

– 5 – 5.0 µA sleep operation

mode;

V

= 0 V

INH

Bus Lines CANL, CANH

Differential receiver

V

dRxD(rd)

–2.8 –2.5 –2.2 V VCC=5.0V
recessive-to-dominant
threshold voltage

Differential receiver
dominant-to-recessive
threshold voltage

CANH recessive output
voltage

CANL recessive output
voltage

CANH dominant output
voltage

CANL dominant output
voltage

CANH output current

V

dRxD(dr)

V

CANHr

V

CANLr

V

CANHd

V

CANLd

I

CANH

–3.17– 2.87–2.58V VCC=5.0V

0.10.20.3VTxD = VCC;

R

< 4 kΩ

RTH

V

CC

– 0.2

V

CC

– 1.4

––VTxD =

R

< 4 kΩ

RTL

–

V

CC

VTxD = 0 V;

normal mode;

I

= – 40 mA

CANH

V

CC

;

–1.11.4VTxD = 0 V;

normal mode;

I

= 40 mA

CAN

L

– 130 – 90 – 50 mA V

CANH

= 0 V;

TxD = 0 V

–0–µA sleep operation

mode;

V

CANH

= 12 V

Semiconductor Group 16 1998-11-01

TLE 6252 G

Static Characteristics (cont’d)

V

4.75 V ≤

≤ 5.25 V; V

CC

otherwise specified). All voltages are defined with respect to ground. Positive current
flowing into the IC.

NSTB

= V

; 6 V ≤ V

CC

≤ 27 V; – 40 ≤ Tj≤ + 125 °C (unless

BAT

Parameter Symbol

CANL output current I

Voltage detection

CANL

V

det(th)

threshold for short-circuit
to battery voltage on
CANH and CANL

Voltage detection

V

det(th)

threshold for short-circuit
to battery voltage on
CANH

CANH wake-up voltage

V

WAKEH

threshold

Limit Values

Unit Notes

min. typ. max.

– 50 90 130 mA V

CANL

= 5 V;

TxD = 0 V

–0–µA sleep operation

mode;

V
V

CANL
BAT

= 0 V;

= 12 V

6.5 7.3 8.0 V normal operation
mode

V

BAT

– 2.5

V

BAT

–2

V

BAT

–1

V stand-by/

sleep operation
mode

1.21.92.7V–

CANL wake-up voltage
threshold

Wake-up voltage
threshold difference

CANH single-ended
receiver threshold

CANL single-ended
receiver threshold

CANH leakage current

V

WAKEL

V

∆

V

CANH

V

CANL

I

CANHl

WAKE

2.43.13.8V–

0.2––V∆V

V

SLP

SLPH

= V

SLPL

–

1.5 1.9 2.3 V failure cases 3, 5
and 7

2.8 3.1 3.8 V failure case 6 and
6a

–05µA VCC=0V,

V

=0V,

bat

V
R
T

=13.5V,

CANL

= 100 Ω,

RTL

<85°C

j

Semiconductor Group 17 1998-11-01

TLE 6252 G

Static Characteristics (cont’d)

V

4.75 V ≤

≤ 5.25 V; V

CC

otherwise specified). All voltages are defined with respect to ground. Positive current
flowing into the IC.

NSTB

= V

; 6 V ≤ V

CC

≤ 27 V; – 40 ≤ Tj≤ +125°C (unless

BAT

Parameter Symbol

CANL leakage current I

CANLl

Termination Outputs RTL, RTH

RTL to

switch-on

CC

R

RTL

V

resistance

RTL output voltage

RTL to BAT switch series

V

R

oRTL

oRTL

resistance

Limit Values

Unit Notes

min. typ. max.

–05µA VCC= 0 V,

V

= 0 V,

bat

V
R
T

= 5 V,

CANH

=100Ω,

RTH

<85°C

j

–4395Ω Io =–10 mA;

normal operating
mode

V

V

CC

– 1.0

CC

– 0.7

10 16 35 kΩ V

–V|Io| < 1 mA; VCC

stand-by mode

stand-by or

BAT

sleep operation
mode

RTH to ground

switch-on

resistance
RTH output voltage

RTH pull-down current

RTL pull-up current

RTH leakage current

R

RTH

V

oRTH

I

RTHpd

I

RTLpu

I

RTHl

–4395Ω Io = 10 mA; normal

operating mode

–0.71.0VIo = 1 mA;

low power mode

–75–µA normal operating

mode, failure
cases 6 and 6a

–– 75–µA normal operating

mode, failure
cases 3, 3a, 5 and 7

–05µA VCC= 0 V,

V

= 0 V,

bat

V
R
T

= 5 V,

CANH

=100Ω,

RTH

<85°C

j

Semiconductor Group 18 1998-11-01

Static Characteristics (cont’d)

TLE 6252 G

4.75 V ≤

V

≤ 5.25 V; V

CC

NSTB

= V

; 6 V ≤ V

CC

≤ 27 V; – 40 ≤ Tj≤ + 125 °C (unless

BAT

otherwise specified). All voltages are defined with respect to ground. Positive current
flowing into the IC.

Parameter Symbol

Limit Values

Unit Notes

min. typ. max.

RTL leakage current I

RTLl

–05µA VCC=0V,

V

=0V,

bat

V
R
T

=13.5V,

CANL

= 100 Ω,

RTL

<85°C

j

Thermal Shutdown

Shutdown junction

T

jSH

150 – –

o

C–

temperature

Semiconductor Group 19 1998-11-01

TLE 6252 G

Dynamic Characteristics

V

= 4.75 V to 5.25 V; V

CC

otherwise specified). All voltages are defined with respect to ground. Positive current
flows into the IC.

Parameter Symbol Limit Values Unit Notes

NSTB

= V

CC

; V

= 6 V to 27 V; TA = – 40 to + 125 oC (unless

BAT

min. typ. max.

CANH and CANL bus
output transition time
recessive-to-dominant

CANH and CANL bus
output transition time
dominant-to-recessive

Minimum dominant time
for wake-up on CANL or
CANH

Minimum WAKE Low time
for wake-up

Failure cases 3 and 6
detection time

Failure case 6a detection
time

Failure cases 5, 6, 6a and
7 recovery time

t

rd

t

dr

t

wu(min)

t

WK(min)

t

fail

0.6 1.4 2.0 µs 10% to 90%;

C

= 10 nF;

1

C

= 0; R

2

= 100 Ω

1

0.7 1.0 1.3 µs 10% to 90%;

C

= 1 nF; C

1

R

= 100 Ω

1

= 0;

2

82238µs stand-by modes

V

= 12 V

BAT

20 36 60 µs Low power modes

V

= 12 V

BAT

30 55 80 µs normal operating

mode

2 4.8 8 ms normal operating

mode

30 55 80 µs normal operating

mode

Failure cases 3 recovery
time

Failure cases 5 and 7
detection time

Failure cases 5, 6, 6a and
7 detection time

Failure cases 5, 6, 6a and
7 recovery time

Semiconductor Group 20 1998-11-01

150 450 750 µs no rm al opera ting

mode

0.75 1.8 4.0 ms normal operating
mode

0.8 3.6 8.0 ms stand-by modes;

V

= 12 V

BAT

–2–µs stand-by modes;

V

= 12 V

BAT

TLE 6252 G

Dynamic Characteristics (cont’d)

V

= 4.75 V to 5.25 V; V

CC

otherwise specified). All voltages are defined with respect to ground. Positive current
flows into the IC.

Parameter Symbol Limit Values Unit Notes

NSTB

= V

CC

; V

= 6 V to 27 V; TA = – 40 to + 125 oC (unless

BAT

min. typ. max.

Propagation delay
TxD-to-RxD LOW
(recessive to dominant)

t

PD(L)

–0.81.5µs C1 = 100 pF;

C

= 0;

R

2

= 100 Ω;

1

no failures and bus
failure cases 1, 2,
3a and 4

C

–0.81.5µs

= C2 = 3.3 nF;

1

R

= 100 Ω; no bus

1

failure and failure
cases 1, 2, 3a and
4

C

–1.21.8µs

100 pF; C2 = 0;

1

R

= 100 Ω; bus

1

failure cases 3, 5,
6, 6a and 7

C

–1.21.8µs

= C2 = 3.3 nF;

1

R

=100 Ω; bus

1

failure cases 3, 5,
6, 6a and 7

Semiconductor Group 21 1998-11-01

TLE 6252 G

Dynamic Characteristics (cont’d)

V

= 4.75 V to 5.25 V; V

CC

otherwise specified). All voltages are defined with respect to ground. Positive current
flows into the IC.

Parameter Symbol Limit Values Unit Notes

NSTB

= V

CC

; V

= 6 V to 27 V; TA = – 40 to + 125 oC (unless

BAT

min. typ. max.

Propagation delay
TxD-to-RxD HIGH
(dominanat to recessive)

t

PD(H)

–1.52.0µs C1 = 100 pF;

C

= 0;

R

2

=100 Ω;

1

no failures and bus
failure cases 1, 2,
3a and 4

C

–2.53.0µs

= C2 = 3.3 nF;

1

R

= 100 Ω; no bus

1

failure and failure
cases 1, 2, 3a and
4

C

–1.01.5µs

100 pF; C2 = 0;

1

R

= 100 Ω; bus

1

failure cases 3, 5,
6, 6a and 7

C

–1.42.1µs

= C2 = 3.3 nF;

1

R

= 100 Ω; bus

1

failure cases 3, 5,
6, 6a and 7

Minimum hold time to go

t

h(min)

42238µs–

sleep command
Edge-count difference

(falling edge) between

n

e

–4––normal operating

mode

CANH and CANL for
failure cases 1, 2, 3a and 4
detection NERR becomes
LOW

Edge-count difference

–2––
(rising edge) between
CANH and CANL for
failure cases 1, 2, 3a and 4
recovery

TxD permanent dominant

t

TxD

1 2.5 4 ms normal mode
disable time

Semiconductor Group 22 1998-11-01

Test and Application

+ 5 V

73654 21

RxDNERR TxDENTWAKE NSTB INH

TLE 6252

CAN Transceiver

RTH RTL CANH CANL GND

V

CC

V

BAT

141312111098

TLE 6252 G

20 pF

+ 12 V

R

11

CC

2

CAN Bus Substitute 1

R R

1

C

K

R

C

11

R

= 100

1

C

1

C

K

1,2

C

K

Ω

= 10 nF
= 1 nF

Schaffner

Generator

CAN Bus Substitute 2

AES02423

Figure 5 Test Circuits

For isolated testing the CAN Bus Substitute 1 is connected to the CAN Transceiver (see

C

Figure 5). The capacitors

R

termination resistors

RTH

and R

simulate the cable. Allowed minimum values of the

1-3

are 500 Ω. Electro mag netic interference on the bus

RTL

lines is simulated by switching to CAN Bus Substitute 2. The waves of the applied
transients will be in accordance with ISO 7637 part 1, test 1, test pulses 1, 2, 3a and 3b.

Semiconductor Group 23 1998-11-01

V

TLE 6252 G

BAT

C 505C / C 515C / C 164CJ

Microcontroller with On - Chip CAN Module

7

6

5

WAKE ENT NSTB

4

NERR

RxD

2

3

TxD

INH

TLE 6252

CAN Transceiver

RTH

8

R

RTL

RTH

V

CANH

CC

9

10

R

RTL

CANL

11

GND

12

V

13

100 nF

1

BAT

14

+5 V

100 nF

TLE 4271 / TLE 4276

Low Drop Voltage Regulator

µ

22 F

CAN Bus Line

AES02422

Figure 6 Application of the TLE 6252 G

Semiconductor Group 24 1998-11-01

Package Outlines

P-DSO-14-2

(Plastic Dual Small Outline)

-0.1

0.2

-0.2

1.45

4

-0.2

1.75 max

TLE 6252 G

0.35 x 45˚

1)

+0.06

0.19

0.35

1.27

+0.15

2)

0.1

0.2 14x

±0.2

6

0.4

+0.8

8˚ max.

14 8

17

8.75

-0.2

1)

Index Marking

1) Does not include plastic or metal protrusion of 0.15 max. per side

2) Does not include dambar protrusion of 0.05 max. per side

GPS05093

Sorts of Packing

Package outlines for tubes, trays etc. are contained in our

Data Book “Package Information”.

SMD = Surface Mounted Device

Semiconductor Group 25 1998-11-01

Dimensions in mm