Siemens SFH640 Datasheet
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SFH 640
PHOTOTRANSISTOR
5.3 KV TRIOS
HIGH BV
OPTOCOUPLER
VOLTAGE
CER
FEATURES
• CTR at I
=10 mA, V
F
CE
=10 V
SFH640-1, 40-80%
SFH640-2, 63-125%
SFH640-3*, 100-200%
• Good CTR Linearity with Forward Current
Dimensions in inches (mm)
3
248 (6.30)
256 (6.50)
12
Pin One ID
Anode
Cathode
1
2
6
Base
5
Collector
• Low CTR Degradation
• Very High Collector-Emitter Breakdown Voltage, BV
• Isolation T est V oltage: 5300 VA C
CER
=300 V
RMS
• Low Coupling Capacitance
• High Common Mode Transient Immunity
• Phototransistor Optocoupler
6 Pin DIP Package with Base Connection
• Field Effect Stable: TRIOS
V
• VDE 0884 Available with Option 1
DE
+
• Underwriters Lab File #E52744
DESCRIPTION
The SFH 640 is an optocoupler with very high
BVCER, a minimum of 300 volts. It is intended for
telecommunications applications or any DC application requiring a high blocking voltage. The
SFH640 is a “better than” replacement for H11D1.
4
5
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
Maximum Ratings (T
Emitter
6
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
=25 ° C)
A
NC
3
.300 (7.62)
18° typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
typ.
4
Emitter
.110 (2.79
.150 (3.81
Reverse Voltage...................................................................................6 V
*Supplies from this group can't always be guranteed due
to unforseeable yield spread.
+
TRIOS
–
TR
ansparent
IO
n
S
hield
DC Forward Current....................................................................... 60 mA
Surge Forward Current (tp ≤
10 µ s) .................................................. 2.5 A
Total Power Dissipation............................................................... 100 mW
Detector
Collector-Emitter Voltage ................................................................ 300 V
Collector-Base Voltage.....................................................................300 V
Emitter-Base Voltage ..........................................................................7 V
Collector Current........................................................................... 50 mA
Surge Collector Current (tp ≤
1 ms)............................................... 100 mA
Total Power Dissipation............................................................... 300 mW
Package
Isolation Test V oltage (between emitter and
detector, refer to climate DIN 40046 part 2
Nov . 74) ......................................................5300 V A C
Isolation Resistance
V
=500 V, T
IO
V
=500 V, T
IO
=25 ° C .........................................................................≥ 10
A
=100 ° C .......................................................................≥ 10
A
RMS
/7500
VAC
12
11
PK
Ω
Ω
Insulation Thickness between Emitter and Detector .................. ≥ 0.4 mm
Creepage .................................................................................................≥
Clearance .................................................................................................≥
Comparative Tracking Index
7 mm
7 mm
per DIN IEC 112/VDE 0303, part1...................................................175
Storage Temperature Range.......................................... -55 °
Operating Temperature Range.......................................-55 °
Junction Temperature......................................................................100 °
C to +150 ° C
C to +100 ° C
C
Soldering Temperature (max. 10 sec., dip soldering:
distance to seating plane ≥
1.5 mm).............................................260 ° C
5–1
Characteristics (T
=25 ° C, unless otherwise specified)
A
Emitter
Forward Voltage V
Reverse Voltage V
Reverse Current I
Capacitance C
Thermal Resistance R
Detector
Voltage
Collector-Emitter
Emitter-Base
Capacitance C
Thermal Resistance R
Package
Coupling Capacitance C
Coupling Transfer Ratio
SFH 640-1
SFH 640-2
SFH 640-3
Saturation Voltage, Collector-Emitter
SFH 640-1
SFH 640-2
SFH 640-3
Leakage Current, Collector-Emitter I
Symbol Min Typ Max Unit Condition
R
BV
BV
C
C
I
C
I
C
I
C
V
V
V
CER
F
R
O
thJA
CER
BEO
CE
CB
EB
thJA
C
/I
F
/I
F
/I
F
CEsat
CEsat
CEsat
1.1 1.5 V I
6VI
0.01 10
µ
AV
25 pF V
750 K/W
300
7
7
8
38
V
V
pF
pF
pF
250 K/W
0.6 pF
40
13
63
22
100
34
30
45
70
0.25
0.25
0.25
80
125
200
0.4
0.4
0.4
%
%
%
V
V
V
1 100 nA V
=10 mA
F
= 10 µ A
R
=6 V
R
=0 V, f=1 MHz
R
I
=1 mA, R
CE
I
=10 µ A
EB
V
=10 V, f=1 MHz
CE
V
=10 V, f=1 MHz
CB
V
=5 V, f=1 MHz
EB
I
=10 mA, V
F
I
=1 mA, V
F
I
=10 mA, V
F
I
=1 mA, V
F
I
=10 mA, V
F
I
=1 mA, V
F
I
= 10 mA, I
F
I
= 10 mA, I
F
=10 mA, I
I
F
=200 V, R
CE
=1 M Ω
BE
=10 V
CE
=10 V
CE
=10 V
CE
=10 V
CE
=10 V
CE
=10 V
CE
=2 mA
C
=3.2 mA
C
=5 mA
C
BE
=1 M Ω
Figure 1. Switching times measurement-test circuit and waveform
I
F
R
L
V
CC
I
C
47Ω
Switching Times (T ypical)
I
=2 mA (to adjust by I
C
Description Symbol Values Unit
Turn-On Time t
Rise Time t
Turn-Off Time t
Fall Time t
ON
R
OFF
F
F
), R
=100 Ω , T
L
=25 ° C, V
A
5
2.5
6
5.5
CC
=10 V
µ s
µ s
µ s
µ s
5–2
INPUT
0
t
pdon
OUTPUT
10%
50%
90%
t
on
t
r
t
d
t
pdof
t
off
t
t
s
r
0
10%
50%
90%
SFH640
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