Siemens SFH6345 Datasheet
Ω
Ω
SFH6345
HIGH SPEED 5.3 kV OPTOCOUPLER
FEATURES
• Direct Replacement for HCPL4503
• High Speed Optocoupler without Base Connection
• GaAlAs Emitter
• Integrated Detector with Photodiode and Transistor
• High Data Transmission Rate: 1 MBit/s
• TTL Compatible
• Open Collector Output
• CTR at IF=16 mA, V
T
=25 ° C: ≥ 19%
A
=0.4 V , V
O
CC
=4.5 V ,
• Good CTR Linearity Relative to Forward Current
• Field Effect Stable
• Low Coupling Capacitance
• Very High Common Mode Transient Immunity
dV/dt: ≥ 15 kV/ µ s at V
• Insulation T est V oltage: 5300 VA C
V
DE
• • VDE 0884 Available with Option 1
=1500 V
CM
PK
• UL Approval, File #E52744
APPLICATIONS
• Data Communications
• IGBT Drivers
• Programmable Controllers
DESCRIPTION
The SFH6345 is an optocoupler with a GaAlAs infrared
emitting diode, optically coupled to an integrated photodetector consisting of a photodiode and a high speed transistor in a DIP-8 plastic package. The device is similar to the
6N135 but has an additional Far aday shield on the detector
which enhances the input-output dv/dt immunity.
Signals can be transmitted between two electrically separated circuits up to frequencies of 2 MHz. The potential difference between the circuits to be coupled should not
exceed the maximum permissible reference voltages.
Package Dimensions in Inches (mm)
Cathode
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
Pin
One
I.D.
NC
Anode
NC
1
2
3
4
.305 typ.
(7.75) typ.
3°–9°
10°
Typ.
.012 (.30)
.008 (.20)
8
V
CC
7
NC
6
Collector
5
Emitter
.135 (3.43)
.115 (2.92)
.268 (6.81)
.255 (6.48)
4°
Typ.
.022 (.56)
.018 (.46)
34
65
.390 (9.91)
.379 (9.63)
.045 (1.14)
.030 (.76)
.100 (2.54)
12
87
Typ.
Absolute Maximum Ratings
Emitter (GaAlAs)
Reverse Voltage............................................................................3 V
DC Forward Current................................................................25 mA
Surge Forward Current.................................................................1 A
tp ≤ 1 µ s, 300 pulses/sec.
Total Power Dissipation...........................................................45 mW
Detector (Si Photodiode + Transistor)
Supply Voltage................................................................–0.5 to 30 V
Output V oltage..............................................................–0.5 to ≥ 25 V
Output Current...........................................................................8 mA
Total Power Dissipation.........................................................100 mW
Package Insulation
Isolation T est Voltage
between emitter and detector .....................................5300 VAC
PK
(refer to climate DIN 40046, part 2, Nov. 74)
Creepage........................................................................ ≥ 7 mm min.
Clearance....................................................................... ≥ 7 mm min.
Comparative Tracking Index
per DIN IEC 112/VDE0303, part 1......................................... ≥ 175
Isolation Resistance
V
=500 V, T
IO
V
=500 V, T
IO
=25 ° C, R
A
=100 ° C, R
A
............................................... ≥ 10
ISOL
............................................. ≥ 10
ISOL
12
11
Storage Temperature Range ......................................–55 to +150 ° C
Ambient Temperature Range......................................–55 to +100 ° C
Junction Temperature .............................................................. 100 ° C
Soldering Temperature (t=10 sec. max.).................................260 ° C
Dip soldering: distance to seating plane ≥ 1.5 mm
5–279
=0 °
µ
°
µ
µ
°
µ A
µ
Characteristics (T
to 70 ° C, unless otherwise specified,typical values T
A
=25 ° C)
A
Description Symbol Min. Typ. Max. Unit
Emitter (IR GaAlAs)
Forward Voltage, I
Reverse Current, V
Capacitance, V
Thermal Resistance R
=16 mA V
F
=3 V I
R
=0 V, f=1 MHz C
R
R
F
0
thJA
1.6 1.9 V
0.5 10
75 pF
700
Detector (Si Photodiode + Transistor)
Supply Current, Logic High
I
=0, V
I
F
=0, V
F
(open), V
O
(open), V
O
=15 V, T
CC
=15 V
CC
=25 ° C
A
Output Current, Output High
I
=0, V
(open), V
F
=0, V
F
=0, V
F
O
(open), V
O
(open), V
O
I
I
Capacitance, V
=5.5 V, T
CC
=15 V, T
CC
=15 V
CC
=5 V, f=1 MHz C
CE
=25 ° C
A
=25 ° C
A
Thermal Resistance R
I
CCH
I
OH
CE
thJA
0.01 1
2
.003
.01
—
0.5
1
50
3pF
300
Package
Coupling Capacitance C
Coupling Transfer Ratio
I
=16 mA, V
F
I
=16 mA, V
F
=0.4 V, V
O
=0.5 V, V
O
=4.5 V, T
CC
=4.5 V
CC
=25 ° C
A
Collector Emitter Saturation Voltage
I
=16 mA, I
F
=2.4 mA, V
O
=4.5 V, T
CC
=25 ° C
A
Supply Current, Logic Low
I
=16 mA, V
F
open, V
O
CC
=15 V
I
C
V
I
CCL
C
OL
/I
F
19
15
0.6 pF
30
—
0.1 0.4 V
80 200
A
K/W
A
A
K/W
%
Switching Times (typ.)
Pulse generator
=50 Ω
Z
O
tf=5 ns
t
,
I
F
r
duty cycle 10%
t≤100 µs
t
V
O
V
OL
t
PHL
t
PLH
5 V
1.5 V
I
Monitor
F
t
I
F
100 Ω
1
2
3
4
8
7
6
5
Description Symbol Min. Typ. Max. Unit
Propagation Delay Time (High–Low)
I
=16 mA, V
F
=5 V, R
CC
=1.9 k Ω , T
L
=25 ° C
A
Propagation Delay Time (Low–High)
I
=16 mA, V
F
=5 V, R
CC
=1.9 k Ω , T
L
=25°C
A
t
PHL
t
PLH
0.3 0.8
0.3 0.8 µs
C=100 nF
s
5 V
R
L
V
O
CL=15 pF
5–280
SFH6345
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