Siemens A52, C55 IFX Repair Documentation

V 1.10 Page 1of 45 ICM MP CCQ GRM
A52/A55/C55 IFX

Company Confidential © Copyright Siemens AG

08/03

A52, A55 & C55 IFX

Level 2.5e

Repair Documentation

V 1.10

Version Date Department Notes to change

V 1.00 09.052003 ICM MP CCQ GRM New document

V 1.10 11.08.2003 ICM MP CCQ GRM Document modified (A52)

V 1.10 Page 2of 45 ICM MP CCQ GRM
A52/A55/C55 IFX

Company Confidential © Copyright Siemens AG

08/03

Table of Contents:

1 LIST OF AVAILABLE LEVEL 2,5E PARTS C55 IFX .........................................4

2 REQUIRED EQUIPMENT FOR LEVEL 2,5E ...................................................... 5

3 REQUIRED SOFTWARE FOR LEVEL 2,5E C55 IFX.........................................5

4 RADIO PART DESCRIPTION............................................................................. 6

4.1 Introduction..................................................................................................... 6

4.2 Power Supply RF-Part .................................................................................... 7

4.3 Frequency generation .................................................................................... 7

4.3.1 Synthesizer: The discrete VCXO (26MHz)...........................................................................7

4.3.2 Synthesizer: LO1..................................................................................................................8

4.4 Antenna Switch / External Antenna Connector (electrical/mechanical only
C55) 10

4.5 Frontendmodul (Electrical Antenna Switch) .............................................. 10

4.6 Receiver......................................................................................................... 11

4.6.1 Receiver: EGSM900/GSM1800 – Filter to Demodulator ...................................................11

4.6.2 IC Overview ........................................................................................................................13

4.7 Transmitter.................................................................................................... 15

4.7.1 Transmitter: Modulator and Limited Amplifier ....................................................................15

4.7.2 Transmitter: and Power Amplifier.......................................................................................16

5 LOGIC / CONTROL........................................................................................... 17

5.1 Overview of Hardware Structure ................................................................. 17

5.1.1 Logic Block Diagram ..........................................................................................................17

5.1.2 Block Diagram C55 IFX Control Part .................................................................................17

5.1.3 EGOLD+.............................................................................................................................18

5.1.4 SRAM .................................................................................................................................22

5.1.5 FLASH ................................................................................................................................22

5.1.6 SIM .....................................................................................................................................22

5.1.7 Vibration Motor ...................................................................................................................23

6 POWER SUPPLY..............................................................................................23

6.1 Power Supply ASIC ......................................................................................23

6.1.1 Power Supply Operating modes: .......................................................................................25

6.1.2 Power Supply Functions:....................................................................................................26

6.2 Battery ........................................................................................................... 33

6.3 Charging Concept......................................................................................... 34

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7 INTERFACES.................................................................................................... 37

7.1 Vibra............................................................................................................... 37

7.2 Earpiece......................................................................................................... 37

7.3 Microphone ................................................................................................... 38

7.4 Battery ........................................................................................................... 38

7.5 IO Connector with ESD protection.............................................................. 39

7.5.1 IO Connector – New Slim Lumberg ...................................................................................39

7.5.2 ESD Protection with EMI filter ............................................................................................40

7.6 SIM ................................................................................................................. 41

7.7 Display........................................................................................................... 41

8 ACOUSTIC........................................................................................................ 42

8.1 Microphone ................................................................................................... 42

8.1.1 Mechanical .........................................................................................................................42

8.1.2 Electrical .............................................................................................................................42

8.2 Earpiece/Loudspeaker ................................................................................. 43

8.2.1 Mechanical .........................................................................................................................43

8.2.2 Electrical .............................................................................................................................43

9 DISPLAY AND ILLUMINATION........................................................................ 44

9.1 Display........................................................................................................... 44

9.2 Illumination ...................................................................................................44

10 KEYBOARD ................................................................................................... 45

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1 List of available level 2,5e parts C55 IFX

ID-No Type Board Name, Location Part-No.

D150 VCO HIT Transmitter_VCO L36820-L6097-D670
D1600 VCO IFX Transmitter_VCO L36820-L6109-D670
D171 IC HIT/IFX Egold+ L36810-G6149-D670
D1740 Filter IFX Ant_Switch_Diplexer L36197-F5006-F936
D1785 IC IFX Transceiver IC L36197-F5011-F334
D361 IC HIT/IFX ASIC L36145-J4682-Y43
D800 IC HIT Transceiver IC L36820-L6105-D670
D920 IC HIT PA_Comperator L36820-L6133-D670
R1507 Resistor IFX Temp_Resistor L36120-F4223-H
R959 Resistor HIT Temp_Resistor L36120-F4223-H
V1500 Diode IFX Capa_Diode L36840-D61-D670
V151 Diode HIT/IFX Diode_KB7 L36840-D5062-D670
V181 Diode HIT/IFX Diode_Battery_Interface L36702-A1051
V211 Transistor HIT/IFX Tran._Vibra L36830-C1097-D670
V220 Diode HIT/IFX Diode_Vibra L36851-Z9105-Z981
V222 Transistor HIT/IFX Trans_Light_ L36830-C1112-D670
V223 Transistor HIT Trans_Light_ L36840-C4004-D670
V361 Transistor HIT/IFX Tran._Charge L36830-C1110-D670
V850 Transistor HIT Tran._VCO_Switch L36820-C6047-D670
V920 Diode HIT Feedback_Diode L36840-D5049-D670
V921 Transistor HIT Tran._PA_Switch L36820-C6047-D670
V950 Transistor HIT Tran._26MHz_Ampl. L36840-C4049-D670
V951 Diode HIT Capa_Diode L36840-D61-D670
Z1500 Quartz IFX Oszillator_26MHz L36145-F260-Y17
Z1600 Filter IFX Transmitter_Filter L36145-K280-Y242
Z1700 IC IFX Power_Amplifier L36197-F5005-F487
Z171 Quartz HIT/IFX Quarz/Egold L36145-F102-Y8
Z211 Filter HIT/IFX Logic/IO_Interface L36197-F5000-F116
Z850 VCO HIT 1LO_VCO L36145-G100-Y96
Z851 Filter HIT Filter_BALUN L36145-K260-Y41
Z880 IC HIT Ant_Switch_Diplexer L36145-K280-Y257
Z900 IC HIT Power_Amplifier L36851-Z2002-A59
Z950 Quartz HIT Oszillator_26MHz L36145-F260-Y17

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2 Required Equipment for Level 2,5e

- GSM-Tester (CMU200 or 4400S incl. Options)

- PC-incl. Monitor, Keyboard and Mouse

- Bootadapter 2000/2002 (L36880-N9241-A200)

- Adapter cable for Bootadapter due to new Lumberg connector

- Troubleshooting Frame C55 (F30032-P209-A1)

- Power Supply

- Spectrum Analyser

- Active RF-Probe incl. Power Supply

- Oscilloscope incl. Probe

- RF-Connector (N<>SMA(f))

- Power Supply Cables

- Dongle (F30032-P28-A1) if USB-Dongle is used a special driver for NT is required

- BGA Soldering equipment

Reference: Equipment recommendation V1.2
(downloadable from the technical support page)

3 Required Software for Level 2,5e C55 IFX

- Windows NT Version4

- Winsui version1.43 or higher

- Software for GSM-Tester ( Cats(Acterna/Wiltek) or CMU-GO(Rohde&Schwarz) )

- Software for reference oscillator adjustment

- Internet unblocking solution

- Dongle driver for USB-Dongle if used with WIN NT4

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4 Radio Part Description

4.1 Introduction

The radio part is necessary to convert the GMSK-RF-signals from the antenna to the
baseband and vice versa.
In the receiving direction, the signals are split in the I- and Q-component and fed to the
A/D-converter of the logic part. In the transmission direction, the GMSK-signal is
generated with the Direct Modulator by modulation of the I- and Q-signals, which are
generated in the baseband section. After the modulation the RF-signals are amplified by
a buffer-limiter and, for the GSM900 path, filtered with a SAW-Filter. Finally, the power
amplifier (PA) is attached to reach the output power.

Transmitter and Receiver are never active at the same time. Simultaneous
reception in the EGSM 900 and GSM 1800 band is impossible as well as
simultaneous transmission in both bands. However the monitoring band
(monitoring timeslot) in the TDMA-frame can be chosen independently of the
receiving or transmitting band (RX- and TX timeslot of the band).

The RF-part is designed for dualband operation (EGSM 900, GSM 1800) and consists of
the following main components:

1. 26MHz reference crystal Z1500

2. TX-Filter in GSM section Z1600

3. Transmitter power amplifier RF9340 with integrated regulator Z1700

4. Front-End-Module including RX-/TX-switch and EGSM 900/GSM1800 receiver SAW-

filters D1740

5. Infineon Limiter/Buffer PMB2256 to amplify the RF signals from the modulator to

drive the PA D1600

6. Infineon Smarti DC2 PMB6256 with the following functionality D1785:

• Integrated active part of the 26MHz crystal oscillator

• PLL for local oscillator LO1

• LO1-VCO

• Direct conversion receiver with channel filtering

• Direct Modulator

• Active part of the reference oscillator including buffer

• Control circuit for band switch

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4.2 Power Supply RF-Part

The voltage regulator for the RF-part is located inside the ASIC D361.(see chapter 5.2).It
generates the required 2,85V “RF-Voltages” named VCC2_8 and VCC_SYN. (VCC_SYN
is also named VCC2 and behind R1451 VCC_OSC)
The following components are supplied by:

VCC2_8

• Limiter amplifier

VCC_SYN

• Modulators

• RX mixers

• VCO

• PLL

• 26 MHz reference oscillator

The voltage regulator RFREG 1 is controlled by the signal SLEEPQ (RF_EN

(RF REG G2)),

RFREG2 is controlled by he signal VCXOEN_UC connected to SLEEP1_N

(on/off Control

H1)

. Both signals are provided by the EGOLD+ (SLEEPQ (GSM TDMA-Timer H16) /

VCXOEN_UC (Miscellaneous R6)).

Circuit diagram

4.3 Frequency generation

4.3.1 Synthesizer: The discrete VCXO (26MHz)

The reference oscillator is a 26 MHz voltage controlled crystal oscillator. It has two main
tasks:

• It is used as reference for the synthesizer phase/frequency detector (Smarti
internal circuit)

• It gives the clock for the processor (E-Gold)

The main block is realized as an internal transistor cell with a Colpitts structure. The 26
MHz quartz crystal is connected to a tuning circuit that allows a fine-tuning of the
frequency. A current mirror, acting as buffer and amplifier followed by a LC resonant
circuit makes the signal to fit the E-Gold clock signal requirements. ON/OFF signal
(VCC_OSC) comes from the ASIC via the resistor R1451. For temperature
measurements of the VCXO a temperature resistance (R700) is used. The resistor is
placed near the VCXO. The measurement result TVCXO is reported to the EGOLD+

(Analog Interface P3) via R138 as the signal TENV. The frequency of the reference oscillator

can be adjusted by the EGOLD+ via a PNM- modulated AFC-signal.
The signal leaves the SMARTI as BB_SIN26M at pin 4 to be further used from the
EGOLD+ (D171

(functional T3)).

The required voltage VCC_SYN is provided by the ASCI D361

V

CC2_8

VCC_

SYN

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Circuit diagram

4.3.2 Synthesizer: LO1

The local oscillator (LO1) consists of a PLL inside the Smarti DC (D720), an external loop
filter. The VCO is build in.

The first local oscillator is needed to generate frequencies which enables the transceiver IC
to demodulate the receiver signal and to perform the channel selection in the TX part. The
LO1/PLL part is switched on with PLLON (

pin 5) from the EGOLD+ (D171 (GSM TDMA Timer

F16)

). The PLL settings are programmed by the 3 wire bus RFCLK (pin 1), RFDATA (pin2)

and RFSTR (

pin3). The LO frequency is 4 times the RX/TX frequency for EGSM 900 and 2

times for GSM1800.

This LO1 frequency range

The required voltage VCC_SYN is provided by the ASIC D361

from EGOLD

to EGOLD+

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Block diagram

Circuit diagram

~

~

External
loopfilter

External
loopfilter

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4.4 Antenna Switch / External Antenna Connector

(electrical/mechanical only C55)

The mechanical antenna switch for the differentiation between the internal and external
antenna.

4.5 Frontendmodul (Electrical Antenna Switch)

EGSM900/GSM1800 <> Receiver/Transmitter

The frontend has two functions.

- to select the different GSM bands

- to switch between RX and TX mode

Inside the frontendmodul SAW filters are integrated in the RX paths.
For dual band mode the FEM needs two supply voltages (VC1, VC2) that are directly
provided by the Smarti DC (FEM1 and FEM2). The following logical table shows the
different modes of the FEM.

Mode Selection Vc. 1 Vc.2 Vc.3

EGSM900 RX LOW LOW LOW
EGSM900 TX HIGH LOW LOW
GSM1800 RX LOW LOW LOW
GSM1800 TX LOW HIGH LOW

GSM1900 RX LOW LOW HIGH
GSM1900 TX LOW HIGH LOW

Two balanced SAW filters are integrated to have good stop-band attenuation in the GSM
and the PCN RX paths.

Top View
Block diagram

to / from
di

p

lexer

External

Internal

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4.6 Receiver

4.6.1 Receiver: EGSM900/GSM1800 – Filter to Demodulator

From the antenna switch, up to the demodulator the received signal passes the following
blocks to get the demodulated baseband signals for the EGOLD+:

Inside Z650 Smarti Smarti Smarti

Filter: The EGSM900, GSM1800 filters are located inside the frontend module. The Filter
are centred to a frequency of 942,5MHz for EGSM900, 1847,5MHz for GSM1800.

LNA:

The LNA´s (EGSM900/GSM1800) are located inside the Smarti. The LNA can be
switched in HIGH (On) and LOW (Off) mode and is controlled by the Smarti depending on
EGOLD+ information.

Demodulator:

The Smarti DC consists of a direct conversion receiver for GSM 900/1800.
The amplified RF signal is converted by a quadrature demodulator to the final
outputsignals at baseband frequency. The LO signals are generated by a divider by 4 for
the GSM900 band and by a divider by 2 for GSM1800 band.
The resulting in-phase and quadratursignals are fed into two baseband low pass filters and
the PGC amplifier chain. The baseband filter provide a suppression of inband-blocking and
adjacent channel interferers.

PGC:

After baseband filtering the signal is fed into a PGC amplifier chain. The baseband
amplifier offers 78 dB programmable gain with 2 dB steps. Due to the high baseband gain
(58 dB), DC offsets can corrupt the signal at the baseband outputs. Differential offset
voltages are reduced by an internal offset compensation circuit. The control is realised
through the EGOLD+ signals (RFDATA; RFCLK; RFSTR.

(RF Control J15, J16, J17).

Filter LNA

PGC

Demodulator

to Antenna

from

P

A

Control Signals
from Smarti

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The required voltage VCCSYN is provided by the ASIC D361

Circuit diagram

Top view

to EGOLD+

progr. signals

from
antenna

PMB6256

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4.6.2 IC Overview

IC Overview

Smarti

RX Path

TX Path

RX/TX Path

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Block diagram

The functional block diagram shows the IFX RF solution of the A55/C55

State

machi ne

Serial

Interface

R

1

D

1

PFD+CP

Transceiver IC

Smarti DC2

PMB6256

Logic

Outputs

BB: RF_I

BB: RF_IX

BB: RF_Q

BB: RF_QX

RFCLK

RFSTR

RFDATA

PA_RAMP

TXON1

TVCXO
(Tenv)

TXONPA

AFC

SIN 26MHz

DC autocalibr ation

PGC (2dB steps)

GSM

PCN

RF PLL

LOOP-Fil ter

BATT+

Band

(Low=GSM
High=DCS)

PA_Ramp

(200mV for

lowest output

level)

SAW

1805 - 1880 MHz

925-960 MHz

942.5 MHz

1842.5 MHz

FEM incl.

SAW

Pin-diode
switch incl.

TX harmonic

filtering

SAW

TX_GSM

(FEM1)

external
antenna

antenna

matching

mechanical

antenna

switch

internal
antenna

Antenna

low pass

filter

Buffer-Limiter

PMB2256

(Lumpi)

H3-Fil ter

(for mod

spectrum)

SAW

RC-Lowpass

RC-Lowpass

internal
RF VCO

3420 - 3540 MHz

3540.4 - 3700 MHz

3700.4 - 3820 MHz

3820.8-3839.2 MHz

LFS

for fast lock

BB-Out BB-Out

DCS LNA

(-20dB at low

gain)

GSM LNA

(-20dB at low

gain)

+/- 45°

IQ demodulator

IQ demodulator

+/- 45°

+/- 45°

IQ modulator

Salzburg

D0950

VCC2_8

VCC_SYN
(for Smarti

supply)

BATT+

VCXOEN

SLEEPQ

2.85V

enable

enable

V REF1

V RF2

BB filter

Tune voltage within 0.5..2.3V

VCXO

integrated act ive

part

26 MHz

AFC voltage

(from E-Gold)

TX_DCS

(FEM2)

Tenv

(Temp
sensor)

TXONPA

(enable)

DCS

GSM

OSW1

(Low=GSM
High=DCS)

Band

(Low=GSM
High=DCS)

TXON1

(enable)

VCC

2_8

VCC

2_8

VCC_SYN

is supply for all

Chip VCC's

OSW1

FEM1

FEM2

Buffer

26MHz

PLL_ON

BB filter

BB filterBB filter

PGC

(2dB steps)

PGC (2dB steps)PGC (2dB steps)

Divider

%2

Divider

%2

Divider

%2

Int. Voltage

Regulator

VREG

RF-Part of L55 Tuna / Infi neon

IQ modulator

+/- 45°

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4.7 Transmitter

4.7.1 Transmitter: Modulator and Limited Amplifier

The GMSK modulated signal is generated in the direct modulator. That means, that the
modulators are working directly on the final output frequency. The LO frequency is divided
by 2 or 4, depending on the GSM band. There are two modulators, one for the two higher
bands and the other for the two lower bands..

The required voltages VCC_SYN and VCC2_8 are provided by the ASIC D361

The actual signal is fed into a limiting amplifier which also provides a signal path for the
high band and one for the low band

Mode Selection

Pin9 / EN (TXON1/D171_J14)) Pin10 / BS (OSW1/D720_25)

EGSM900 limiter enable HIGH LOW

GSM1800 limiter enable HIGH HIGH

Top View IC Overview

The next stage in the low band line-up is a TX saw filter.
In the high band no SAW filter is required.

to PA

from EGOLD+

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4.7.2 Transmitter: and Power Amplifier

The output signals (CS_PA_IN , and GSM_PA_IN) from the limited amplifier are led to the
power amplifier (Z1700) passing a matching circuit. contains two separate 3-stage amplifier
chains for GSM 900 and GSM 1800. The control of the output power is handled via one
Vapc port. The power control circuit itself is integrated in the PA module. The EGOLD
generates the power control signal PA-RAMP. The band selection switching is done via

OSW1 from the Smarti IC.

The required voltage BATT+ is provided by the battery.
The required voltage VCC2_8 for the power control circuit is provided by the ASIC D361.

Blockdiagram of R 340 (PA)

to Ant.
connector

from limitter
amplfier

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5 Logic / Control

5.1 Overview of Hardware Structure

5.1.1 Logic Block Diagram

5.1.2 Block Diagram C55 IFX Control Part

RF Control

RF-

Part

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21 24

Bus

Interface

Unit

Shared Memory

Dual Port 512 x 16

Keypad

Interface

GSM

TDMA Timer

TAP Controller

JTAG

Boundary Scan

Cipher Unit

A51/52

SIM card
Interface

High Speed

(F=512, D=8/16)

32 kHz

13/26/52 MHz / 32 kHz

78 MHz

Dual Port RAM

1k x 16

OCEM

SRAM

256k x 8

DSP Timer2

X-Bus

PD-Bus

PROM

1k x 16

Boot

Block

confidential

DSP Serial

Comm. Interface /

DAI

RTC

External

Bus & Port

Controller

AFC Unit

Pulse-Carry Mod.

80

Power

Management

DSP Timer1

Viterbi

HW

Accelerator

ID Register

SSC

SPI

compatible

ASC0

Autobaud

Detect

ASC1

6

2

2

Multicore

Debug Support

SEIB

CAPCOM

2 x 8 bit

16

RF Control

8 16

3

GPT1/GPT2

Watchdog

8

CS(4:0)

Interrupt Controller

Osc.

32.768 kHz

Enable Signals to
X- and PD-Bus Peripherals

MCU

C166S

Clock Generation

Peripheral Enable

Generator

Switch Matrix

Battery & Temperature

Measurement

DAC

R-String

GMSK

Modulator

Voiceband

Filters

RX and TX

Σ∆

ADC

MUX

Baseband

Filter/

Cordic-

Processor

Σ∆

ADC

Σ∆

ADC

16 bit I/O Ports

E-GOLD+ V3.0 Architecture

Single Chip Cellular Baseband Processor

RF Output

Power Control

10 bit DAC

Bandgap

reference

voltage

Σ∆

DAC

12 bit resolution

DAC

R-String

Package: P-LFBGA-208

READY#
NMI#
HOLD#
HLDA#
CLKOUT
RSTOUT#

6

2

2

2

2

2

2

2

2

3

8 3

4

6

P ROM

60k x 16

P RAM

4k x 16

Y RAM

2k x 16

X RAM

15k x 16

X ROM

36k x 16

Interp./

Noise

Shaper

Interp./

Noise

Shaper

GPRS

Cipher Unit

OAK78 DSP

x

Interleaving / De-Interleaving

x

Speech Coding/Decoding

(FR, HR, EFR, AMR)

x

Level Measurement

x

Channel Coding/Decoding

(FR, HR, EFR, AMR)

x

Equalization

x

Encryption / Decryption

x

Voice Memo/Voice Dialing

x

GPRS support

I2C

2

LM-Bus

I2S

3

MMCI

V5.4

5

4

Logic

Arranger

(LPA)

OCDS DPEC

Interrupt Controller

5.1.3 EGOLD+

Block Diagram EGOLD+ V3.1

The EGOLD+ contains a 16-bit micro-controller (µC part), a GSM analog Interface (EGAIM), a DSP
computing core (DSP part) and an interface for application-specific switch-functions.

The µC part consists of the following:

• Micro-controller

• System interfaces for internal and external peripheries

• On-chip peripheries and memory

The Controller Firmware carries out the following functions:

• Control of the Man Machine Interface (keypad, LCD, sensing element, control of the illumination,...)

• GSM Layer 1,2,3 /GPRS

• Control of radio part (synthesizer, AGC, AFC, Transmitter, Receiver...),

• Control of base band processing (EGAIM)

• Central operating system functions (general functions, chip select logic, HW driver, control of mobile

phones and accessories...).

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The EGAIM part contains the interface between the digital and the analogue signal processing:

• 2 Sigma Delta A/D converters for RX signal, and for the necessary signals for the charge control and

temperature measurement. For this, the converter inputs are switched over to the various signals via
the multiplexer.

• 2 D/A converters for the GMSK-modulated TX signal,

• 1 D/A converter for the Power Ramping Signal,

• 1 Sigma Delta A/D and D/A converter for the linguistic signal.

Blockdiagram EGAIM inside the EGOLD

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Measurement of Battery and Ambient Temperature

The battery temperature is measured via the voltage divider R1387, R138 by the EGOLD+

(Analog

Interface P2).

For this, the integrated Σ∆ converter of the RX-I base band branch is used. This Σ∆
converter compares the voltage of TBAT and TENV internally. Through an analogue multiplexer, either
the RX-I base band signal, or the TBAT signal and the TENV signal is switched to the input of the
converter. The signal MEAS_ON from the EGOLD+

(GSM TDMA-TIMER H15) activates the battery voltage

measurement The ambient temperature TENV is measured directly at of the EGOLD+ (Analog

Interface P3)

.

Measurement of the Battery Voltage

The measurement of the battery voltage is done in the Q-branch of the EGOLD+, for this BATT+ is
connected via a voltage divider R143, R146 to the EGOLD+

(Analog Interface P1). An analogue multiplexer

does the switching between the baseband signal processing and the voltage measurement.

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A/D conversion of MIC-Path signals incl. coding

The Microphone signals (MICN2, MIP2, MICP1, MICN1) arrive at the voiceband part of the EGOLG+.
For further operations the signals will be converted into digital information, filtered, coded and finally
formed into the GMSK-Signal by the internal GMSK-Modulator. This so generated signals (RF_I, RF_IX,

RF_Q, RF_QX) are given to the Bright IC in the transmitter path.

D/A conversion of EP-Path signals incl. decoding

Arriving at the baseband-Part the demodulated signals (RF_I, RF_IX, RF_Q, RF_QX) will be filtered
and A/D converted. In the voiceband part after decoding (with help of the µC part) and filtering the
signals will be D/A converted amplified and given as (EPP1_FIL, EPN1_FIL) to the Power Supply ASIC.

Generation of the PA Control Signal (PA_RAMP)

The RF output power amplifier needs an analogue ramp up/down control voltage. For this the system
interface on EGOLD+ generates 10 bit digital values which have to be transferred serially to the power
ramping path. After loading into an 10 bit latch the control value will be converted into the corresponding
analogue voltage with a maximum of ~2V

-

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The DSP part contains:

• DSP signal processor

• Separate program/data memory

• a hardware block for processing the RX signal,

• a hardware block for “ciphers“,

• a hardware block for processing the linguistic signal,

• a hardware block for the “GMSK modulator“,

• De-/ interleaving memory,

• Communication memory

• a PLL for processing and reproducing the VCXO pulse signal.

In the DSP Firmware are implemented the following functions:

• scanning of channels, i.e., measurement of the field strengths of neighbouring base stations

• detection and evaluation of Frequency Correction Bursts

• equalisation of Normal Bursts and Synchronisation Bursts

• channel encoding and soft-decision decoding for fullrate, enhanced-fullrate and

adaptive multirate speech, fullrate and halfrate data and control channels.

• channel encoding for GPRS coding

• fullrate, enhanced fullrate and adaptive multirate speech encoding and decoding

• mandatory sub-functions like

– discontinuous transmission, DTX
– voice activity detection
– background noise calculation

• generation of tone and side tone

• hands-free functions

• support for voice memo

• support for voice dialling

• loop-back to GSM functions

• GSM Transparent Data Services and Transparent Fax

• calculation of the Frame Check Sequence for a RLP frame used for GSM NonTransparent Data

Services

• support of the GSM ciphering algorithm

Real Time Clock (integrated in the EGOLD+):
The real time clock is powered via a separate voltage regulator inside the Power Supply ASIC. Via a
capacitor, data are kept in the internal RAM during a battery change for at least 30 seconds. An alarm
function is also integrated with which it is possible to switch the phone on and off.

5.1.4 SRAM

Memory for volatile data
A52 A55/C55
Memory Size: 4 Mbit 2 Mbit
Data Bus: 16Bit 16Bit

5.1.5 FLASH

A52 A55/C55
Memory Size: 32Mbit 64Mbit (8 Mbyte)
Data Bus: 16 Bit 16 Bit

5.1.6 SIM

SIM cards with supply voltages of 1.8V and 3V are supported.

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5.1.7 Vibration Motor

The vibration motor is mounted in the lower case. The electrical connection to the PCB is realised with
pressure contacts.

6 Power Supply

6.1 Power Supply ASIC

The power supply ASIC will contain the following functions:

• Powerdown-Mode

• Sleep Mode

• Trickle Charge Mode

• Power on Reset

• Digital state machine to control switch on and supervise the µC with a watchdog

• Voltage regulator

• Low power voltage regulator

• Additional output ports

• Voltage supervision

• Temperature supervision with external and internal sensor

• Battery charge control

• I

2C interface

• Audio multiplexer

• Audio amplifier stereo/mono

• 16 bit Sigma/Delta DAC with Clock recovery and I

2S

• Bandgap reference*

INFO:

* Bandgap reference

The p-n junction of a semiconductor has a bandgap-voltage. This bandgap-voltage is almost
independent of changes in the supply voltage and has a very low temperature gradient. The bandgap­voltage is used as reference for the voltage regulators.

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Power Supply Diagram

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6.1.1 Power Supply Operating modes:

The ASIC can be used in different operating modes:

Mode

Pin
Requirements

Description

Power down
mode with
minimum activity

ON/OFF
ON/OFF2
VDD_CHARGE

In power down mode the current consumption
of the ASIC is very low. The inputs for switch
on conditions (ON/OFF-PinH2, ON/OFF2-PinJ3
,VDD_CHARGE-PinC3), the LPREG, Bandgap
reference and the POR cells are active. All
other blocks are switched off, so the battery is
not discharged. This state is called “phone off.

Start Up Mode ON_OFF

ON_OFF2

Start Up Mode can be initiated by

ON_OFF(PinH2) or ON_OFF2(PinC3). In this

mode a sequential start-up of references,
oscillator, voltage supervision and regulators is
controlled by digital part. In failure case (under
voltage, over voltage or time out of the µC

reaction)., the ASIC is shut down.
Full operating
mode

VDD_CHARGE
CHARGE_UC

All blocks are active. Trickle charge is switched

off. The blocks fast charge and charge monitor

can be active only in this mode. These modes

will be activated with VDD_CHARGE(PinC3) or

CHARGE_UC(PinH4). The name of this mode

is “phone on” or “active mode”. The border

between the startup phase and the active mode

is the rising edge of the RESET2_N (PinG1)

signal. This will allow the µC(EGOLD+) to start

working.
Active Mode
(submode of Full
operating mode)

In this mode, the µC(EGOLD+) controls the

charging block and most of the failure cases.

The ASIC can be controlled by the TWI

interface (I2CC-PinJ2, I2CD-PinG3, I2CI-

PinE2), interrupts can be sent by the ASIC.

Further, the temperature and the voltages are

supervised (in case of failure, the uC will be

informed). In case of watchdog failure, over

voltage or power on reset, the ASIC will be

switched off immediately. The mono and stereo

audio block can be switched on in active mode.
Sleep Mode with
special low
current operating
mode for the
LDOs
(submode of Full
operating mode)

SLEEP1_N
TC_ON
CHARGE_uC

A low level at the signal VCOEN_UC (PinH1)

will switch the phone from the mode “PHONE

ON” to sleep mode. This mode can be

activated out of the active mode. In sleep mode

trickle charge, fast charge, supply over voltage

detection, supply under voltage detection,

audio function are switched off. LDO under

voltage detection, clock and all reference

voltages are active. LDOs are working in low

current mode. The possibility to supply the

ASIC from VDD_CHARGE (PinC3) with the

internal LDO is switched off. Only the battery

can be used for supply. This mode is called

“phone stand-by”.

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Mode

Pin
Requirements

Description

Trickle charge
mode to be able
to support
charging of the
battery

VDD_CHARGE
EXT_PWR

In case of a rising edge at VDD_CHARGE

(PinC3) the ASIC goes from power down to

interim mode. In this mode, the oscillator and

the reference are started. The fuses are read

in. If the voltage is high enough (after a delay

time of 1 ms to filter a ringing), the internal

signal EXT_PWR is going to H and the power

up continues. The ASIC shuts off if the voltage

is below threshold. In Trickle Charge Mode,

first the charge unit starts and charges the

battery in case of under voltage. After reaching

this threshold voltage or if the battery has

enough voltage from the beginning, a start up

similar to the regular startup mode is initiated.

In case of voltage drop under battery threshold,

the first trickle charging can be started again

until the Active Mode is entered. In this case,

the internal VDDREF regulator, the reference

generator and oscillator are started and the

ASIC is supplied by VDDREF. If any failure is

detected, the ASIC is switched off.

6.1.2 Power Supply Functions:

Functions

Pin
Requirements

Sequence

Switching on the
mobile phone

ON_OFF,
ON_OFF2,
VDD_CHARGE

There are 3 different possibilities to switch on

the phone by external pins:

- VDD_CHARGE (PinC3) with rising edge
after POR or high level at end of POR
signal

- ON/OFF (PinH2) with falling edge

- ON/OFF2 (PinJ3) with rising edge

In order to guarantee a defined start-up
behavior of the external components, a
sequential power up is used and the
correct start up of these blocks is
supervised. In active mode, a continuous
signal at watchdog is needed to keep the
system running. If the signals fails, the

ASIC will switch to power down mode. It

must be guaranteed that each start-up
condition does not interfere and block the
other possible startup signals. In case of
failure during start-up, the device will go
back to power down mode. To guarantee
that VDDCHARGE (PinC3) is always
sensed we must be able to detect whether
the VDDCHARGE (PinC3) will have a
rising edge during POR (this can happen in
case of an empty battery). Therefore this
signal is sensed as level sensitive at the
end of POR and edge sensitive after POR
signal.

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Functions

Pin
Requirements

Sequence

Watchdog
monitoring

WDOG As soon as the first WDOG (PinH3) pin rising is

detected during the TE4 timer, the device start
the watchdog monitoring procedure. Standard
switch off of the phone is the watchdog. The
first edge of watchdog is rising. If a falling edge
is detected as the first transient the device will
go to power down mode again and the whole
phone is switched off. Rising and falling edges
must be detected alternated. With any edge on

WDOG (PinH3) pin a counter will be loaded.

The next - compared to the previous edge ­inverted edge must occur between end of T1,
and end of T2. If the signal occurs before end
of T1 or is not detected until end of T2, the
device will go to power down mode
immediately after the violation of the watchdog
criteria occurs.
T1 min. 0,327s/ typ. 0,360s/ max. 0,400s
T2 min. 2,600s/ typ. 2,860s/ max. 3,178s

Power-On-Reset
(POR)

RESET_N
RESET2_N

To guarantee a correct start-up of the ASIC, a
power on reset is needed at first power supply
ramping. Therefore a static/dynamic power on
reset circuit is added, which creates a reset
each time the power supply is connected. After
POR the ASIC starts up the reference and the
oscillator, read in the fuse content and goes
back to power down mode. If the power supply
will drop under the POR threshold a
synchronous reset is done and the ASIC will go
to power down mode independently of the

previous operating mode.
Voltage Supply
Logics

REG1
(2.9V)

The linear controller is designed for 2.9V(±2%)

and a maximum load current of 140 mA.

Voltage and current for the external Logic is

supplied from the internal 2.9V logic regulator.

The operating voltage VREG1 is kept constant

up to the maximum rated load current. A

reference voltage for the regulator circuit is

generated from a bandgap reference
Voltage Supply
Logics

REG2
(1,92V)

The linear controller is designed for

1.82V(±3%) and a maximum load current of

300 mA.

The REG2 supplies the Baseband Processor.

For a high power application, the power has to

be dissipated outside of the chip. This is done

with a series diode at the input of REG2, which

will force the regulator to a lower input voltage

and therefore lower power dissipation.

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Functions

Pin
Requirements

Sequence

Voltage Supply
Logics

REG3
(2.65V)

The linear controller is designed for

2.65V(±3%) and a maximum load current of

220 mA.

It will consist basically of an internal operation

amplifier, an integrated p-channel output

transistor as well as a capacitor (C = 2.2µF) for

stabilizing the voltage. The required reference

voltage for the regulating circuit will be

generated internally via a bandgap. The

negative feedback of the regulating circuit shall

be done via chip-internal resistances.
Voltage Supply
RF

VREGRF1,
RF_EN,
RESET_N

The linear controller is designed for 2.85V(min.

2.79V, max. 2.91V) and a maximum load

current of 120 mA.

Voltage and current for RF-VCO and

Transceiver is supplied from the internal 2.85V

LDO. The operating voltage RF12LDO is kept

constant up to the maximum rated load current.

A reference voltage for the regulator circuit is

generated from a bandgap reference. A low

noise must be guaranteed.

RF1LDO is controlled by RF_EN. If it is set to

high, the regulator is enabled. The control

method can be modified by TWI interface

between external and internal control mode. If

internal control mode is set, RF1LDO can only

be enabled by TWI bit. In external mode,

RF1LDO can only be enabled by RF_EN.

RF1LDO is released with rising edge of

RESET_N signal.
Voltage Supply
RF

VREGRF2,
SLEEP1_N,
SLEEP2_N,
POWER_ON

The linear controller is designed for 2.85V(min.

2.79V, max. 2.91V) and a maximum load

current of 180 mA.

Voltage and current for RF-VCO and

Transceiver is supplied from the internal 2.85V

LDO. The operating voltage RF2LDO is kept

constant up to the maximum rated load current.

A reference voltage for the regulator circuit is

generated from a bandgap reference. A low

noise must be guaranteed.

RF2LDO is controlled by VCXO_EN (PinH1). If

it is set to high, the regulator is enabled. The

control method can be modified by TWI

interface between external and internal control

mode. If internal control mode is set, RF2LDO

can only be enabled by TWI bit. In external

mode, RF2LDO can only be enabled by

VCXO_EN (PinH1).

RF2LDO is released with rising edge of

POWER_ON signal.

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Functions

Pin
Requirements

Sequence

Voltage Supply
Audio

VREGA The linear controller is designed for 2.9V(min.

2.84V, max. 2.96V) and a maximum load

current of 190 mA.

BATT+ (PinA9) is used for the whole stereo

analog supply. The DAC digital VDDDAC

(PinC6), Low Noise Bandgap, Mono- and

Stereoamplifier supplies are connected to

VREGA (PinB9). The AUDIO performances are

guaranteed only, if the VREGA supplies all the

stereo path.

VREGA is controlled with TWI registers directly

by the µC.
Voltage Supply
RTC

VLPREG The linear controller is designed for 2.00V(min.

1.9V, max. 2.1V) and a maximum load current

of 1 mA.

The output voltage can be adjusted to four

different values with TWI register by the µC.

The selectable values are 2.00(default), 1.82,

1.92 and 2.07V. LP-LDO is always working and

will switch of only with POR signal.
Voltage Supply
SIM

VREGSIM The linear controller is designed for 2.9V(min.

2.84V, max. 2.96V) and a maximum load

current of 60 mA. The output voltage can be

adjusted to a different value with TWI register

by the µC to 1.8V(min. 1.76V, max. 1.84V).

This regulator can be activated by TWI register

, but only in active mode. If the regulator is in

power down, the output is pulled down by a

transistor to avoid electrostatic charging of

VREGSIM (PinB8)

Charge Support CHARGE_UC,

CHARGE,
VDDCHARGE,
AVDD,
SENSE_IN,
TBAT

A charge support will be integrated for

controlling the battery charge function. It

consists basically of a temperature sensor, an

external charge FET, an integrated High-side

driver for the external FET with an external

resistor between the source and the gate of the

charge FET.

In the case of a rising edge at the

CHARGE_UC(PinH4) the power source will be

switched on. In this way the charge FET

becomes conducting, provided that the

integrated temperature comparator does not

give the signal for extreme temperature and

that no over voltage is present at the VDD. In

the case of falling slope at the

CHARGE_UC(PinH4), the current source is

switched off and the pull-up resistor will make

sure that the charge FET is blocked after a

definite time.

Temperature switchoff becomes effective at

approx. T>60°C.
Voltage
supervision

The levels of regulator REG1 and REG2 and

also the supply voltage BATT+ are supervised

with comparators.

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Functions

Pin
Requirements

Sequence

Supervision of
REG1 and REG2

REG1
REG2

In active mode the regulators are supervised

permanently. If the voltage is under the

threshold, the pin RESET_N2 (PinG1) stay Low

and the ASIC goes back to the power down

mode. If the voltage is longer than Tmin under

threshold voltage, the RESET_N2 (PinG1) is

going to Low (Missing Watchdog signal ->

phone switched off). The level of regulator

REG1 and REG2 will be supervised

permanently. If the voltage doesn’t reach the

threshold value at switch on, the RESET_N2

(PinG1) will stay low and the ASIC will go back

to power down mode. The voltages are sensed

continuously and digitally filtered with a time

constant Tmin. If the regulator voltage is under

threshold longer than Tmin, the RESET_N2

(PinG1) signal change to low and the µC will go

to RESET condition (Missing Watchdog signal -

> phone switched off).
Powersupply
supervision

VDD If the battery voltage BATT+ exceeds VDD

high, everything is switched off immediately

within 1µs. Only the pull-up circuitry for the

external charge PMOS are active and will

discharge the gate of the external PMOS
VDDA supervision VDDA To provide a short circuit protection at output of

VDDA (PinA9) and output of stereo buffer a

voltage supervision is implemented. If the

VDDA output is less then this threshold, the

VDDA will be switched off for 128ms. After this

time the VDDA will be started again. The VDDA

supervision starts 60ms after startup of VDDA.
Battery
temperature
supervision

Charging is stopped, when over temperature

occurs. Within 128ms, 3 values are measured.

When these 3 values are identical status can

be changed. The supervision is active in fast

charge or trickle charge mode. Voltage on pin

TBAT (PinB3) becomes smaller when

temperature increases. If Vbat < (Vref_exe -

Vhyst) charging is disabled. Only when Vtbatt >

Vref_exe charging is enabled again.
Device
temperature
supervision

To protect the ASIC, the temperature is

supervised. The temperature is polled every

128ms and is filtered as in battery temperature

supervision. If over temperature is detected, a

bit in the STATUS register is set and an

interrupt is generated. Monitoring is started

only in active mode.
Analog switch
Outport

The level can be defined by the bit

out_port_high of the TWI register. The high

level can be derived of VREG2 or VREG3.

Additional a pull down transistor is connected

to this node.

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Functions

Pin
Requirements

Sequence

TWI Interface TWI_CLK,

TWI_DATA,
TWI_INT

The TWI interface (I2CC-PinJ2, I2CD-PinG3,

I2CI-PinE2) is an I2C compatible 2-wire

interface with an additional interrupt pin to

inform the µC about special conditions.

The interface can handle clock rates up to 400

kHz.
Audio mode
functions

Four audio amplifiers are integrated to support

these modes:

1. Supply the speaker in the phone with audio
signals including the possibility of
handsfree switch on and off. This is the
AUDIO MONO MODE.

2. Supply the speaker in the phone with
ringing signal (RINGER MODE)

3. Transfer a key click, generated in digital
part to the speaker. (KEY-CLICK
FUNCTION)

4. Supply of stereo head set with stereo
signal with short circuit protection. This is
called the AUDIO STEREO MODE. These
different modes with gain and multiplexing
can be controlled via TWI. Also the output
can be switched to TRI-STATE via TWI
interface.

Audio Mono Mode VREGA

MONO1
MONO2
VREFEX_M

This mode is the main function of the amplifier.
The two amplifiers are used as differential
mono amplifier to drive the speaker in the
phone as external load. This differential
approach allows delivering an optimum of
power to the speaker also in low voltage mode.
Both amplifier paths are inverting amplifiers
with external AC coupling at the input to
compensate offset failures. The gain can be
adjusted with the TWI interface. The output
stage of the amplifiers must be able to drive a
low impedance load as an external speaker for
the handsfree application.
General parameters: Gain can be adjusted for
each channel separately in steps of 1.5dB in
the range of 21dB to –54 dB and in steps of 3
dB in the range of –54dB to –75dB. The signals
for the amplifier are connected via an audio
multiplexer with 3 pairs of input signals.

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Functions

Pin
Requirements

Sequence

Ringer function RINGIN In ringer mode the ringing signal is transferred

via the amplifier to the speaker to eliminate the
additional buzzer. The speaker is controlled
with a rectangular signal RINGIN (PinG9). Input
signal is digital signal with variable frequency.
Amplitude is adjusted by TWI register.
For start-up a smaller time constant must be
used to allow a fast switch on behavior. Ringing
function can be started at any time. If the audio
is off, the start-up is done with RINGER time
constant. If audio is starting with AUDIO start­up, the time constant is switched to RINGER
mode, too. If the audio amplifier is already up
and running, the RINGIN (PinG9) is connected
to the amplifier and audio signal is muted due
to open multiplexer.

Key click function Pushing a key of the phone can be combined

with a key click. This function is also realized
with the audio amplifier in pulsed mode. The

ASIC creates a digital PWM signal. Frequency

of the PWM signal is 3.5 kHz.
The start-up is similar to the ringer function. If
the audio is off, the start-up is done with
KEYCLICK time constant. If audio is starting
with AUDIO start-up, the time constant is
switched to KEYCLICK mode, too. If the audio
amplifier is already up and running, the
KEYCLICK is connected to the amplifier and

audio signal is muted due to open multiplexer.
Audio Multiplex
Matrix

AUDIOA1
AUDIOA2
AUDIOB1
AUDIOB2
AUDIOC1
AUDIOC2

Each of the three input sources should be

switched to Mono and Stereo outputs.

Furthermore a conversion can be done.

Following sources:

- Mono differential

- Mono Single Ended (both channels

parallel)

- Stereo

The DAC can be switched off for using the

analog external inputs. This principle will allow

to do each combination and have different

modes for stereo and mono in parallel.
I2S Interface CLO,

WAO,
DAO

The I2S Interface is a three-wire connection

that handles two time multiplexed data

channels. The three lines are the clock (CLO),

the serial data line (DAO) and the word select

line (WAO). The master I2S also generates the

appropriate clock frequency for CLO set to 32

times the sampling rate (FS)

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Functions

Pin
Requirements

Sequence

Audio DAC

VDDDAC For digital to analog conversion a 16-bit sigma

delta converter is used. Digital input signal is

delivered with an I2S interface. The I2S

interface should be 16-bit format. To be able to

work with all possible operating modes, the

sampling frequency can vary from 8kHz to

48kHz. The performance of the audio output

signal must be guaranteed over the full range

the human ear is able to hear. This means for

FS=8kHz the noise at frequencies higher than

FS/2 must be suppressed. This is done by DSP

and a single ended 2

nd

order Low Pass filter.
The clock for the I2S will be varied accordingly
to the sampling frequency. Therefore a clock
recovery based on CLO signal of the I2S can
be implemented. This clock recovery must
smooth any jitter of this clock to reduce the
noise of the DAC.

PLL VDDPLL

PLLOUT

The PLL will have three frequency modes to
produce a 32xCLO clock for the DSP and the
DAC. The loop filter is realized with an external
RC circuit. This PLL also contains a lock
detector circuit.

Audio Stereo
Mode

VDDSTEREO
STEREO1
STEREO2
STEREOM

For stereo mode 2 single ended buffers are
used. These buffers will be supplied by the
additional regulator with 2.9 Volt to be more
stable against the GSM ripple on the battery
voltage. Also reference voltage for the buffers
is generated by a high precision, low noise
bandgap reference for better performance. An
external capacitor is needed to filter this
reference additionally. The gain steps for the
programmable gain amplifier is identical with
the mono amplifier. No keyclick and ringer
needed for the stereo part. Gain can be
controlled with the TWI. The connected
speaker has an impedance of typical 16 Ohm.
To guarantee an ANTI-POP noise a digital
startup is implemented. This will allow a soft
start of the VMID and creates a “clean” audio
band during the startup. For eliminating
external coupling capacitors for the speaker, an
additional amplifier creates virtual ground (for
both speakers). Accordingly to this, the max
current of the virtual ground has to be the
double of the normal output amplifier. Due to
the power amplifier offset a DC current appear
in the headset. Gain can be adjusted for each
channel separately in steps of 1.5dB in the
range of 21dB to –54 dB and in steps of 3 dB in
the range of –54dB to –75dB

6.2 Battery

As a standard battery a LiIon battery with a nominal capacity of 3,7 Volt/700mAh is used.

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6.3 Charging Concept

6.3.1.1 Charging Concept

General

The battery is charged in the unit itself. The hardware and software is designed for LiIon with 4.2V
technology.
Charging is started as soon as the phone is connected to an external charger. If the phone is not
switched on, then charging takes place in the background (the customer can see this via the “Charge”
symbol in the display). During normal use the phone is being charged (restrictions: see below).
Charging is enabled via a PMOS switch in the phone. This PMOS switch closes the circuit for the
external charger to the battery. The EGOLD+ takes over the control of this switch depending on the
charge level of the battery, whereby a disable function in the POWER SUPPLY ASIC hardware can
override/interrupt the charging in the case of over voltage of the battery (only for Manganese Chemistry
Battery types e.g. NEC).
With the new slim Lumberg IO connector we lose the charger recognition via SB line. Now we measure
the charge current inside the POWER SUPPLY ASIC with a current monitor.
The charging software is able to charge the battery with an input current within the range of 350-600mA.
If the Charge-Fet is switched off, then no charging current will flow into the battery (exception is trickle
charging, see below).
For controlling the charging process it is necessary to measure the ambient (phone) temperature and
the battery voltage. The temperature sensor will be an NTC resistor with a nominal resistance of 22kΩ
at 25°C. The determination of the temperature is achieved via a voltage measurement on a voltage
divider in which one component is the NTC. The NTC for the ambient temperature will be on the PCB
(13 MHz part).

Measurement of Battery, Battery Type and Ambient Temperature

The voltage equivalent of the temperature and battery code on the voltage separator will be calculated
as the difference against a reference voltage of the EGOLD. For this, the integrated Σ∆ converter in the

EGOLD of the RX-I base band branch will be used. Via an analogue multiplexer, either the RX-I base

band signal, the battery code voltage or the ambient temperature voltage can be switched over to the
input of the converter. The 1-Bit data stream of the converter will be subjected to a data reduction via
the DSP circuit so that the measured voltage (for battery and ambient temperature) will be available at
the end as a 10-bit data word.

Charging current
Charging control signal

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Measurement of the Battery Voltage

Analogue to the I-branch either the RX-Q base band signal or the battery voltage can be measured in
the Q-branch. Processing in the DSP circuit will be done analogue to the I-branch. The EGOLD will be
specified internally at voltage measurement input BATT+ for an input voltage of 3V...4.5V.

Timing of the Battery Voltage Measurement

Unless the battery is charging, the measurement is made in the TX time slot. During charging it will be
done after the TX time slot. At the same time, either the battery temperature (in the I-branch) and the
battery voltage (in the Q-branch) or the ambient temperature in the I-branch can be measured (the
possibility of measurement in the Q-branch, the analogue evaluation of the battery coding, is used for
HW-Coding). Other combinations are not possible. For the time of the measurement the multiplexer in
the EGAIM must be programmed to the corresponding measurement.

Recognition of the Battery Type

The battery code is a resistor with a resistance depending on the manufacturer.

Charging Characteristic of Lithium-Ion Cells

LiIon batteries are charged with a U/I characteristic, i.e. the charging current is regulated in relation to
the battery voltage until a minimal charging current has been achieved. The maximum charging current
is approx. 600mA, minimum about 100mA. The battery voltage may not exceed 4.2V ±50mV average.
During the charging pulse current the voltage may reach 4.3V. The temperature range in which
charging of the phone may be started ranges from 5...40°C, and the temperature at which charging
takes place is from 0...45°C. Outside this range no charging takes place, the battery only supplies
current.

Trickle Charging

The POWER SUPPLY ASIC is able to charge the battery at voltages below 3.2V without any support
from the charge SW. The current will by measured indirectly via the voltage drop over a shunt resistor
and linearly regulated inside the POWER SUPPLY ASIC. The current level during trickle charge for
voltages <2.8V is in a range of 20-50mA and in a range of 50-100mA for voltages up to 3.75V. To limit
the power dissipation of the dual charge FET the trickle charging is stopped in case the output voltage
of the charger exceeds 10 Volt. The maximum trickle time is limited to 1 hour. As soon as the battery
voltage reaches 3.2 V the POWER SUPPLY ASIC will switch on the phone automatically and normal
charging will be initiated by software (note the restrictions on this item as stated below).

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Normal Charging

For battery voltages above 3.2 Volt and normal ambient temperature between 5 and 40°C the battery
can be charged with a charge current up to 1C*. This charging mode is SW controlled and starts if an
accessory (charger) is detected with a supply voltage above 6.4 Volt by the POWER SUPPLY ASIC.
The level of charge current is limited/controlled by the accessory or charger.

INFO:

* C-rate

The charge and discharge current of a battery is measured in C-rate. Most portable batteries, are
discharge with 1C. A discharge of 1C draws a current equal to the battery capacity. For example, a
battery value of 1000mAh provides 1000mA for one hour if discharged at 1C. The same battery
discharged at 0.5C provides 500mAfor two hours. At 2C, the same battery delivers 2000mA for 30
minutes. 1C is often referred to as a one-hour discharge; a 0.5 would be a two-hour, and a 0.1C a 10
hour discharge.

Restrictions

• A battery which has completely run down can not be re-charged quickly because the battery voltage
is less than 3.0V and the logic which implements the charge control cannot be operated at this low
voltage level. In this case the battery is recharged via trickle-charging. However, the charging
symbol cannot be shown in the display because at this time logic supply voltages are not operating.
The charging time for this trickle-charging (until the battery can be fast-charged from then on) is in
the range of 1 hour. If, within this time, the battery voltage exceeds 3.2V, then the POWER SUPPLY

ASIC switches on the mobile and charging continues in the Charge-Only Mode. In some

circumstances it can happen that after trickle-charging and the usually initiated switch-on procedure
of the mobile, the supply voltage collapses so much that the mobile phone switches off again. In this
case trickle charging starts again with a now raised threshold voltage of 3.75V instead of 3.2V, at
maximum for 20 minutes. The POWER SUPPLY ASIC will retry switching on the phone up to 3 times
(within 60 minutes overall).

• Charging the battery will not be fully supported in case of using old accessory (generation ‘45’ or
earlier). It is not recommended to use any cables that adapt “old” to “new” Lumberg connector. Using
such adapters with Marlin will have at least the following impact:

1) half-sine wave chargers (e.g. P35 & home station) can not be used for trickle

charging

2) normal charging might be aborted before the battery is fully charged

3) EMC compliance can not be guaranteed

• A phone with a fully charged LiIon battery will not be charged immediately after switch-on. Any input
current would cause an increase of the battery voltage above the maximum permissible value. As
soon as the battery has been discharged to a level of about 95% (due to current consumption while
use), it will be re-charged in normal charging mode.

• The phone cannot be operated without a battery.

• The phone will be destroyed if the battery is inserted with reversed polarity:
⇒ design-wise it is impossible to wrongly pole the phone. This is prevented by mechanical means.
⇒ electrically, a correctly poled battery is presumed, i.e. correct polarity must be guaranteed by

suitable QA measures at the supplier

• The mobile phone might be destroyed by connecting an unsuitable charger:
⇒ a charger voltage >15V can destroy resistances or capacitors
⇒ a charger voltage >20V can destroy the switch transistor of the charging circuit

In case the transistor fails the ASIC will be destroyed. In the case of voltages lower than 15V and an
improper current limitation the battery might be permanently damaged. A protection against grossly
negligent use by the customer (e.g. direct connection of the charge contact to the electricity supply in
a motor car) is not provided. Customer safety will not be affected by this restriction.

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7 Interfaces

7.1 Vibra

Pin IN/OUT Remarks

1 O
2 O The FET V211, switching this signal, is controlled via the

EGOLD+ signal VIBRA_UC.

7.2 Earpiece

Pin Name IN/OUT Remarks

1 EPP1 O 1st connection to the internal earpiece.

Earpiece can be switched off in the case of
accessory operation. EPP1 builds together
with EPN1 the differential output to drive the
multifunctional “earpiece” (earpiece, ringer,
handsfree function).

2 EPN1 O 2nd connection to the internal earpiece.

Earpiece can be switched off in the case of
accessory operation.

XG220

XG250

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7.3 Microphone

Pin Name IN/OUT Remarks

1 MICP1 O Microphone power supply. The same line

carries the low frequency speech signal.

2 MICN1 I Speech signal. The same line carries the

microphone power supply.

3 GND_MIC

7.4 Battery

Pin Name Level Remarks

1 GND - Ground
2 AKKU_TYP 0V...2.65V Recognition of battery/supplier
3 BATT+ 3 V... 4.5V Positive battery pole

XG242

XG181

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7.5 IO Connector with ESD protection

7.5.1 IO Connector – New Slim Lumberg

Pin

Name IN/OUT Notes

1 POWER I/O POWER is needed for charging batteries and for supplying

the accessories. If accessories are supplied by mobile,
talk-time and standby-time from telephone are reduced.
Therefore it has to be respected on an as low as possible
power consumption in the accessories.

2 GND
3 TX O Serial interface

4 RX I serial interface

5 DATA/CTS I/O Data-line for accessory-bus

Use as CTS in data operation.

6 RTS I/O Use as RTS in data-operation.

7 CLK/DCD I/O Clock-line for accessory-bus.

Use as DTC in data-operation.

8 AUDIO_L Analog O driving ext. left speaker

With mono-headset Audio_L and Audio_R differential
mode

9 AUDIO_REF Analog O mid-voltage

in stereo mode reference to
AUDIO_L and AUDIO_R in mono mode not used

10 AUDIO_R Analog O driving ext. right speaker With mono-headset Audio_L and

Audio_R differential Signal

11 GND_MIC Analog I for ext. microphone

12 MICP2 Analog I External microphone

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7.5.2 ESD Protection with EMI filter

The Z211 is a 5-channel filter with over-voltage and ESD Protection array which is designed to provide
filtering of undesired RF signals in the 800-4000MHz frequency band Additionally the Z211 contains
diodes to protect downstream components from Electrostatic Discharge (ESD) voltages up to 8 kV.

Pin configuration of the Z211

Z211 Circuit Configuration

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7.6 SIM

Pin Name IN/OUT Remarks

3 CCLK O Pulse for chipcard.

The chipcard is controlled directly from the

EGOLD+.

2 CCRST O Reset for chipcard

I 7 CCIO
O

Data pin for chipcard;
10 kΩ pull up at the CCVCC pin

1 CCVCC - Switchable power supply for chipcard;

220 nF capacitors are situated close to the
chipcard pins and are necessary for buffering
current spikes.

7.7 Display

Pin Name Remarks

1 2.9V Power supply display controller
2 LCD_CLK Clock
3 LCD_DAT Data line
4 LCD_RS Register select
5 LCD_CS Chip select
6 GND GND
7 VLCD Power supply display
8 LCD_RESET Reset

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8 Acoustic

The buzzer and the keypad clicks will be realized over the earpiece. At normal buzzer the signaling will
realized with swelling tones. At the same time a maximum sound pressure level in the coupler of 135 +/­5dB(A) is fixed.
The standard sounds will be generated by the EGOLD+, the advanced sounds will be generated via
firmware running on the DSP.

8.1 Microphone

8.1.1 Mechanical

The microphone is built in the Mounting Frame Lower Part and is mechanically fixed with a rubber seal
(gasket). The contact on the PCB is realised via spiral springs, which are integrated in the gasket.
Because of usage of Unidirectional Microphone, the gasket has a front- and a back sound-inlet hole.
The front sound-inlet is acoustically tighten connected with a sound-inlet at the rear-side of the
mounting frame lower part. The back sound-inlet is acoustically tighten connected with a sound-inlet at
the bottom-side of the mounting frame lower part. The gasket of the microphone has a asymmetrical
shape in order to provide non-rotating, guaranteed covering of the sound-inlets of mounting frame lower
part to the corresponding sound-inlets at microphone gasket.

8.1.2 Electrical

Both Microphones are directly connected to the EGOLD+.(Analog Interface G2, F1-G3, H2) via the signals

MICN1, MICP1 (Internal Microphone )and MICN2, MICP2 (External Microphone/Headset). Power

supply for the Microphone is VMIC (EGOLD+.(

Analog Interface G1))

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8.2 Earpiece/Loudspeaker

8.2.1 Mechanical

The speakermodule is designed to provide optimal performance for mobile handsfree and sound ringer.
Plus independent from mobile leakage sound performance. Therefore speakermodule is a system that
has a closed front volume with sound-outlets towards the ear of the user. Backvolume of
Speakermodule is using the unused air between the antenna and the PCB. Backvolume is just used for
resonance, there is no sound output from backvolume. The speakermodule is glued to the lightguide
and contacted via two bending springs to the PCB. The lightguide itself is screwed with six screws via
the PCB to the mounting frame lower part. Two of the six screws are located besides of the connection
of speakermodule and lightguide. Therefore a good and reliable connection between speakermodule
and PCB should be provided.

8.2.2 Electrical

The internal and external Loudspeaker (Earpiece) is connected to the voiceband part of the EGOLD+
(

Analog Interface B1, C1) via audio amplifier inside the ASIC (D361). Input EPN1_FIL - EPP1_FIL. Output

for external loudspeaker AUDIO_L - AUDIO_R, for internal Loudspeaker EPP! – EPN1. The ringing
tones are generated with the loudspeaker too. To activate the ringer, the signal RINGIN from the
EGOLD+ (

Miscellaneous,D16) is used

EGOLD+

from Bright
IC

to ASIC

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1

8

Topside of

display

Controller

9 Display and Illumination

9.1 Display

The display is provided with 2,65V from the ASIC (D361). The communication with the EGOLD+ by the
LCD-Signals, directly connected to the EGOLD+

9.2 Illumination

The light is switched via switches inside the EGOLD+. With the signal LIGHT_KB (Miscellaneous T17) the
illumination for the keyboard is controlled, with LIGHT_LCD. (GSM TDMA-Timer G15) the display backlight
can be switched “on” and “off”. During the TX timeslot the light is deactivated via the signal BL_OFF
(

GSM TDAM-Timer G14)

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10 Keyboard

The keyboard is connected via the lines KB0 – KB9 with the EGOLD+.
KB 7 is used for the ON/OFF switch. The lines KB0 – KB5 are used as output signals. In the matrix
KB6, KB8 and KB9 are used as input signals for the EGOLD+.