Siemens BC847S Datasheet

998

BC 847S

NPN Silicon AF Transistor Array

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Two ( galvanic) internal isolated Transistors

with high matching in one package

Type Marking Ordering Code Pin Configuration Package

BC 847S 1Cs Q62702-C2372

1/4=E1/E2 2/5=B1/B2 3/6=C2/C1

SOT-363

Maximum Ratings
Parameter

V

CEO

Collector-base voltage
Collector-emitter voltage 50

Peak collector current
Total power dissipation,

T

= 115 °C

S

Storage temperature

V
V
V
I

C

I

CM

P
T
T

CBO
CES
EBO

tot
j
stg

ValueSymbol Unit

45Collector-emitter voltage
50

6Emitter-base voltage

100DC collector current
200

150Junction temperature °C

- 65...+150

V

mA

mW250

Thermal Resistance

Junction ambient

1)

Junction - soldering point

R
R

thJA
thJS

≤275 K/W
≤140

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu

Semiconductor Group

1

May-12-1

BC 847S

998

Electrical Characteristics at

T

=25°C, unless otherwise specified

A

Parameter Symbol UnitValues

min. typ. max.

DC Characteristics per Transistor

Collector-emitter breakdown voltage

I

= 10 mA,

C

I

B

= 0

Collector-base breakdown voltage

I

= 10 µA,

C

I

B

= 0

Collector-emitter breakdown voltage

I

= 10 µA,

C

I

= 10 µA,

E

V

I

C

BE

= 0

= 0

Collector cutoff current

V

V

CB

CB

= 30 V,

= 30 V,

I

= 0

E

I

= 0 ,

E

T

= 150 °C

A

DC current gain 1)

I

= 10 µA,

C

I

= 2 mA,

C

V

V

CE

CE

= 5 V

= 5 V

Collector-emitter saturation voltage1)

I

= 10 mA,

C

I

= 100 mA,

C

I

= 0.5 mA

B

I

= 5 mA

B

Base-emitter saturation voltage 1)

I

= 10 mA,

C

I

= 100 mA,

C

I

= 0.5 mA

B

I

= 5 mA

B

Base-emitter voltage 1)

I

= 2 mA,

C

I

= 10 mA,

C

V

CE

V

CE

= 5 V

= 5 V

V

(BR)CEO

V

(BR)CBO

V

(BR)CES

V

(BR)EBO

I

CBO

I

CBO

h

FE

V

CEsat

V

BEsat

V

BE(ON)

50 --

6Emitter-base breakdown voltage

-

200

-

-

-

-

580

-

- -

-

-- nA15

- 5-

250

290

90

200

700

900

660

-

--50

-

-

630

250

650

-

-

700

770

V45

µACollector cutoff current

-

mV

1) Pulse test: t < 300µs; D < 2%

Semiconductor Group

2

May-12-1