Siemens BC847PN Datasheet

998

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BC 847PN

NPN/PNP Silicon AF Transistor Array

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Two (galvanic) internal isolated NPN/PNP

Transistors in one package

Tape loading orientation

PIN Configuration

Type Marking PackageOrdering Code

BC 847PN 1Ps

Q62702-C2374

SOT-363

1 = E

PNP-Transistor 4 = E 5 = B 3 = C

2 = BNPN-Transistor 6 = C

Maximum Ratings
Parameter ValueSymbol Unit

V

CEO

Collector-base voltage 50
Collector-emitter voltage
Emitter-base voltage 5

Total power dissipation,

T

= 115 °C mW

S

V
V
V
I

C

I

CM

P

CBO
CES
EBO

tot

T
T

st

45

50

100
200Peak collector current
250
150Junction temperature °C

-65...+150Storage temperature

Thermal Resistance

Junction ambient
Junction - soldering point

1)

R
R

thJA
thJS

≤275 K/W
≤140

VCollector-emitter voltage

mADC collector current

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu

Semiconductor Group

1

May-12-1

BC 847PN

998

Electrical Characteristics at

T

=25°C, unless otherwise specified

A

Parameter

DC Characteristics per Transistor

Collector-emitter breakdown voltage

I

= 10 mA,

C

I

B

= 0

Collector-base breakdown voltage

I

= 10 µA,

C

I

B

= 0

Collector-emitter breakdown voltage

I

= 10 µA,

C

V

= 0

BE

Emitter-base breakdown voltage

I

= 10 µA,

E

I

C

= 0

Collector cutoff current

V

CB

V

CB

= 30 V,

= 30 V,

I

= 0

E

I

= 0 ,

E

T

= 150 °C

A

DC current gain 1)

I

= 10 µA,

C

I

= 2 mA,

C

V

V

CE

CE

= 5 V

= 5 V

Symbol Values Unit

min. typ. max.

V

(BR)CEO

V

(BR)CBO

V

(BR)CES

V

(BR)EBO

I

CBO

I

CBO

h

FE

50

50 --

5

-

- -

-

200

-45

- -

250

290

15 nA-

5

630

V-

--

µACollector cutoff current

-

-

Collector-emitter saturation voltage1)

I

= 10 mA,

C

I

= 100 mA,

C

I

= 0.5 mA

B

I

= 5 mA

B

Base-emitter saturation voltage 1)

I

= 10 mA,

C

I

= 100 mA,

C

I

= 0.5 mA

B

I

= 5 mA

B

Base-emitter voltage 1)

I

= 2 mA,

C

I

= 10 mA,

C

1) Pulse test: t < 300µs; D < 2%

Semiconductor Group

V

CE

V

CE

= 5 V

= 5 V

V

CEsat

-

-

V

BEsat

-

-

V

BE(ON)

580

-

2

90

200

700

900

660

-

300

650

-

750

820

May-12-1

mV

-