Siemens BC846S Datasheet

BC 846S

Semiconductor Group

Ma -12-19981

NPN Silicon AF Transistor Array

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Two ( galvanic) internal isolated Transistors

with high matching in one package

VPS05604

6

3

1

5

4

2

Type Marking Ordering Code Pin Configuration Package

BC 846S 1Ds Q62702-C2529 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363

Maximum Ratings
Parameter

ValueSymbol Unit

V

V

CEO

65

Collector-emitter voltage
Collector-base voltage

V

CBO

80

Collector-emitter voltage 80

V

CES

6

Emitter-base voltage

V

EBO

mA

I

C

100

DC collector current
Peak collector current

I

CM

200

Total power dissipation,

T

S

= 115 °C

mW250

P

tot

150

Junction temperature

°C

T

j

Storage temperature

T

stg

- 65...+150

Thermal Resistance

Junction ambient

1)

R

thJA

≤275 K/W

Junction - soldering point

R

thJS

≤140

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu

Semiconductor Group 1 1998-11-01

BC 846S

Semiconductor Group

Ma -12-19982

Electrical Characteristics at

T

A

=25°C, unless otherwise specified

Parameter

Symbol UnitValues

min. typ. max.

DC Characteristics per Transistor

V65

V

(BR)CEO

Collector-emitter breakdown voltage

I

C

= 10 mA,

I

B

= 0

- -

Collector-base breakdown voltage

I

C

= 10 µA,

I

B

= 0

V

(BR)CBO

--80

Collector-emitter breakdown voltage

I

C

= 10 µA,

V

BE

= 0

V

(BR)CES

80 --

-

V

(BR)EBO

6Emitter-base breakdown voltage

I

E

= 10 µA,

I

C

= 0

-

Collector cutoff current

V

CB

= 30 V,

I

E

= 0

I

CBO

-- nA15

µACollector cutoff current

V

CB

= 30 V,

I

E

= 0 ,

T

A

= 150 °C

I

CBO

- 5-

DC current gain 1)

I

C

= 10 µA,

V

CE

= 5 V

I

C

= 2 mA,

V

CE

= 5 V

-

200

250
290

h

FE

-

450

-

mV

-

-

Collector-emitter saturation voltage1)

I

C

= 10 mA,

I

B

= 0.5 mA

I

C

= 100 mA,

I

B

= 5 mA

V

CEsat

90

200

250

650

Base-emitter saturation voltage 1)

I

C

= 10 mA,

I

B

= 0.5 mA

I

C

= 100 mA,

I

B

= 5 mA

700

900

-

-

-

-

V

BEsat

580

-

660

-

700

770

V

BE(ON)

Base-emitter voltage 1)

I

C

= 2 mA,

V

CE

= 5 V

I

C

= 10 mA,

V

CE

= 5 V

1) Pulse test: t < 300µs; D < 2%

Semiconductor Group 2 1998-11-01