Siemens BC846PN Datasheet

BC 846PN

Semiconductor Group

Sep-07-19981

NPN/PNP Silicon AF Transistor Array

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Two (galvanic) internal isolated NPN/PNP

Transistors in one package

Tape loading orientation

VPS05604

6

3

1

5

4

2

PIN Configuration

Type Marking Package NPN-TransistorOrdering Code 1 = E 6 = C2 = B

Q62702-C2537 SOT-363 PNP-Transistor 4 = E 3 = C5 = BBC 846PN 1Os

Maximum Ratings
Parameter ValueSymbol Unit

VCollector-emitter voltage

V

CEO

65

Collector-base voltage 80

V

CBO

Collector-emitter voltage

V

CES

V80

V

EBO

VEmitter-base voltage 5
mADC collector current

I

C

100
200Peak collector current

I

CM

Total power dissipation,

T

S

= 115 °C

mW

P

tot

250

T

j

150Junction temperature °C

-65...+150Storage temperature

T

st

g

Thermal Resistance

Junction ambient

1)

R

thJA

≤275

K/W

Junction - soldering point

R

thJS

≤140

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu

Semiconductor Group 1 1998-11-01

BC 846PN

Semiconductor Group

Sep-07-19982

Electrical Characteristics at

T

A

=25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics per Transistor

Collector-emitter breakdown voltage

I

C

= 10 mA,

I

B

= 0

V-

V

(BR)CEO

-65

Collector-base breakdown voltage

I

C

= 10 µA,

I

B

= 0

- -

V

(BR)CBO

80

Collector-emitter breakdown voltage

I

C

= 10 µA,

V

BE

= 0

V

(BR)CES

80 V--

Emitter-base breakdown voltage

I

E

= 10 µA,

I

C

= 0

--

V

(BR)EBO

5

Collector cutoff current

V

CB

= 30 V,

I

E

= 0

15 nA-

I

CBO

-

µACollector cutoff current

V

CB

= 30 V,

I

E

= 0 ,

T

A

= 150 °C

- -

I

CBO

5

h

FE

-

200

-

450

250

290

DC current gain 1)

I

C

= 10 µA,

V

CE

= 5 V

I

C

= 2 mA,

V

CE

= 5 V

-

mV

300

650

Collector-emitter saturation voltage1)

I

C

= 10 mA,

I

B

= 0.5 mA

I

C

= 100 mA,

I

B

= 5 mA

-

-

90

200

V

CEsat

Base-emitter saturation voltage 1)

I

C

= 10 mA,

I

B

= 0.5 mA

I

C

= 100 mA,

I

B

= 5 mA

700

900

V

BEsat

-

-

-

-

Base-emitter voltage 1)

I

C

= 2 mA,

V

CE

= 5 V

I

C

= 10 mA,

V

CE

= 5 V

V

BE(ON)

580

-

660

-

750

820

V

1) Pulse test: t < 300µs; D < 2%

Semiconductor Group 2 1998-11-01