Sharp LZ23H3V1 Datasheet

LZ23H3V1

DESCRIPTION

The LZ23H3V1 is a 1/3-type (6.0 mm) solid-state image sensor that consists of PN photo-diodes and CCDs (charge-coupled devices). With approximately 1 090 000 pixels (1 217 horizontal x 893 vertical), the sensor provides a stable high­resolution color image.

FEATURES

• Optical size : Number of effective pixels – Approx. 1 000 k; 6.6 mm – Approx. 790 k; 5.9 mm (compatible with XGA
format)
• Interline scan format
• Square pixel
• Number of effective pixels : 1 174 (H) x 884 (V)
• Number of optical black pixels – Horizontal : 3 front and 40 rear – Vertical : 7 front and 2 rear
• Number of dummy bits – Horizontal : 22 – Vertical : 2
• Pixel pitch : 4.6 µm (H) x 4.6 µm (V)
• R, G, and B primary color mosaic filters
• Supports monitoring mode
• Low fixed-pattern noise and lag
• No burn-in and no image distortion
• Blooming suppression structure
• Built-in output amplifier
• Built-in overflow drain voltage circuit and reset gate voltage circuit
• Variable electronic shutter
• Package : 16-pin shrink-pitch WDIP [Ceramic] (WDIP016-N-0500C) Row space : 12.70 mm

PIN CONNECTIONS

PRECAUTIONS

• The exit pupil position of lens should be 15 to 50 mm from the top surface of the CCD.
• Refer to "PRECAUTIONS FOR CCD AREA SENSORS" for details.
(1 024)
1 000 k pixels
1 156
790 k pixels
866
(768)
(5.9 mm) 6.6 mm
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
LZ23H3V1
1/3-type Interline Color CCD Area
Sensor with 1 090 k Pixels
1OD
2GND
3OFD
4PW
5Ø
RS
6NC
7Ø
H1
8
16
15
14
13
12
11
10
9Ø
H2
OS
GND
Ø
V1A
ØV1B
ØV2
ØV3A
ØV3B
ØV4
16-PIN SHRINK-PITCH WDIP
TOP VIEW
(WDIP016-N-0500C)
LZ23H3V1
2

PIN DESCRIPTION

SYMBOL PIN NAME
OD Output transistor drain OS Output signals ØRS Reset transistor clock Ø
V1A, ØV1B, ØV2, ØV3A, ØV3B, ØV4 Vertical shift register clock
ØH1, ØH2 Horizontal shift register clock
PW P-well GND Ground NC No connection
Overflow drainOFD

ABSOLUTE MAXIMUM RATINGS (TA = +25 ˚C)

PARAMETER SYMBOL RATING UNIT
Output transistor drain voltage V
OD 0 to +18 V
Reset gate clock voltage V
ØRS Internal output V
Vertical shift register clock voltage V
ØV VPW to +18 V
Horizontal shift register clock voltage VØH –0.3 to +12 V Voltage difference between P-well and vertical clock V
PW-VØV –29 to 0 V
Storage temperature T
STG –40 to +85 ˚C
Ambient operating temperature T
OPR –20 to +70 ˚C
2
NOTE
NOTES :
1. Do not connect to DC voltage directly. When OFD is connected to GND, connect VOD to GND. Overflow drain clock is applied below 27 Vp-p.
2. Do not connect to DC voltage directly. When Ø
RS is connected to GND, connect VOD to GND. Reset gate clock is
applied below 8 Vp-p.
3. When clock width is below 10 µs, and clock duty factor is below 0.1%, voltage difference between vertical clocks will be below 28 V.
1VInternal outputVOFDOverflow drain voltage
3V0 to +15V
ØV-VØVVoltage difference between vertical clocks
LZ23H3V1
3

RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE
Ambient operating temperature T
OPR 25.0 ˚C
Output transistor drain voltage V
OD 14.55 15.0 15.45 V
NOTES :
1. Use the circuit parameter indicated in "SYSTEM CONFIGURATION EXAMPLE", and do not connect to DC voltage directly.
2. V
PW is set below VØVL that is low level of vertical shift register clock, or is used with the same power supply that is connected
to V
L of V driver IC.
3. Operation frequency is 14.32 MHz.
4. Operation frequency is 18.00 MHz.
* To apply power, first connect GND and then turn on V
OD. After turning on VOD, turn on PW first and then turn on other powers
and pulses. Do not connect the device to or disconnect it from the plug socket while power is being applied.
1V26.524.5VØOFD
Overflow drain clock
P-well voltage VPW –10.0 VØVL V2
Ground GND 0.0 V
V–8.5–9.0–9.5
V
ØV1AL, VØV1BL, VØV2L
VØV3AL, VØV3BL, VØV4L Vertical shift register clock
LOW level
INTERMEDIATE level
HIGH level
V
ØV1AI, VØV1BI, VØV2I
VØV3AI, VØV3BI, VØV4I
VØV1AH, VØV1BH VØV3AH, VØV3BH
14.55
0.0
15.0 15.45VV
LOW levelHorizontal shift
register clock
V
ØH1L, VØH2L –0.05 0.0 0.05 V
HIGH level V
ØH1H, VØH2H 4.5 5.0 5.5 V
1V5.55.04.5V
ØRSReset gate clock p-p level
Reset gate clock frequency f
ØRS
14.32 MHz 3
Horizontal shift register clock frequency f
ØH1, fØH2
14.32 MHz 3
Vertical shift register clock frequency
f
ØV1A, fØV1B, fØV2
fØV3A, fØV3B, fØV4
10.88 kHz 3 4kHz13.47
4MHz18.00
4MHz18.00
p-p level
LZ23H3V1
4

CHARACTERISTICS (Drive method : 1/30 s frame accumulation)

(T
A = +25 ˚C, Operating conditions : The typical values specified in "
RECOMMENDED OPERATING CONDITIONS
".
Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE
Standard output voltage V
O 150 mV 2
Photo response non-uniformity PRNU 10 % 3
Saturation output voltage V
SAT
450 530 mV 4
Dark output voltage V
DARK 0.5 3.0 mV 1, 6
Dark signal non-uniformity DSNU 0.5 2.0 mV 1, 7 Sensitivity (green channel) R 105 150 mV 8 Smear ratio SMR –75 –65 dB 9
NOTES :
• Within the recommended operating conditions of VOD, V
OFD of the internal output satisfies with ABL larger than
500 times exposure of the standard exposure conditions, and V
SAT larger than 330 mV.
1. T
A = +60 ˚C
2. The average output voltage of G signal under uniform illumination. The standard exposure conditions are defined as when Vo is 150 mV.
3. The image area is divided into 10 x 10 segments under the standard exposure conditions. Each segment's voltage is the average output voltage of all pixels within the segment. PRNU is defined by (Vmax – Vmin)/Vo, where Vmax and Vmin are the maximum and minimum values of each segment's voltage respectively.
4. The image area is divided into 10 x 10 segments. Each segment's voltage is the average output voltage of all pixels within the segment. V
SAT is the minimum
segment's voltage under 10 times exposure of the standard exposure conditions. The operation of OFDC is high. (for still image capturing)
5. The image area is divided into 10 x 10 segments. Each segment's voltage is the average output voltage of all pixels within the segment. V
SAT is the minimum
segment's voltage under 10 times exposure of the standard exposure conditions. The operation of OFDC is low.
6. The average output voltage under non-exposure conditions.
7. The image area is divided into 10 x 10 segments under non-exposure conditions. DSNU is defined by (Vdmax – Vdmin), where Vdmax and Vdmin are the maximum and minimum values of each segment's voltage respectively.
8. The average output voltage of G signal when a 1 000 lux light source with a 90% reflector is imaged by a lens of F4, f50 mm.
9. The sensor is exposed only in the central area of V/10 square with a lens at F4, where V is the vertical image size. SMR is defined by the ratio of the output voltage detected during the vertical blanking period to the maximum output voltage in the V/10 square.
10. The sensor is exposed at the exposure level corresponding to the standard conditions. AI is defined by the ratio of the output voltage measured at the 1st field during the non-exposure period to the standard output voltage.
11. The sensor is exposed only in the central area of V/10 square, where V is the vertical image size. ABL is defined by the ratio of the exposure at the standard conditions to the exposure at a point where blooming is observed.
12. The sensor is exposed at the exposure level corresponding to the standard conditions. LCR is defined by (∆V
G/VO) x 100, where ∆VG is the difference
between the average output voltage of G signal at the 1st field, and that of G signal at the 2nd field.
5mV410330
11500ABLBlooming suppression ratio
10%1.0AIImage lag
Output transistor drain current I
OD 4.0 8.0 mA
12%3.0LCRLine crawling
LZ23H3V1
5

PIXEL STRUCTURE

1 pin
,
,
,
,
,
y
y
y
y
y
,
,
,
,
,
y
y
y
y
y
1 174 (H) x 884 (V)
OPTICAL BLACK
(2 PIXELS)
OPTICAL BLACK
(7 PIXELS)
OPTICAL BLACK
(3 PIXELS)
OPTICAL BLACK
(40 PIXELS)

COLOR FILTER ARRAY

GBGBG
RGRGR
GBGBG
RGRGR
GBGBG
RGRGR
BGBGB
GRGRG
BGBGB
GRGRG
BGBGB
GRGRG
BGBGB
GRGRG
BGBGB
GRGRG
BGBGB
GRGRG
GBGBG
RGRGR
GBGBG
RGRGR
GBGBG
RGRGR
(1, 884) (1 174, 884)
(1, 1) (1 174, 1)
Ø
V3B
ØV1A
ØV1B
ØV3A
ØV1A
ØV1A
ØV3A
ØV1B
ØV3B
ØV1B
ØV3A
ØV3B
Pin arrangement of the vertical readout clock
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LZ23H3V1
6

TIMING CHART

NOTES :
1. Do not use these signals immediately after field accumulation mode is transferred to frame accumulation mode for still image capturing.
2. Do not use these signals immediately after frame accumulation mode is transferred to field accumulation mode for monitoring mode image.
* Apply at least an OFD shutter pulse to OFD in each field accumulation mode.
* Do not use the field signals immediately after frame accumulation mode is transferred to field
accumulation mode.
ØV3A
ØV2
ØV1B
ØV1A
VD
TIMING CHART EXAMPLE
OS
OFDC
Ø
OFD
ØV4
ØV3B
(at OFD shutter operation)
Field accumulation mode Field accumulation
Not for use 
(NOTE 1)
Not for use 
(NOTE 1)
Not for use 
(NOTE 2)
Frame accumulation mode
(2.3..882.883) (2.3..882.883) (2.4..882.884) (1.3..881.883) mode (2.3..882.883)
(Number of  vertical line)
Pulse diagram in more detail is shown in the figure q to t after next page.
Field accumulation mode Frame accumulation
mode at first
Frame accumulation mode Field accumulation
mode at first
Field accumulation  mode
qqwer e'tq
ØOFD
ØV3A
OFDC
OS
Ø
V4
ØV3B
ØV2
ØV1B
ØV1A
VD
HD
Shutter speed
1/1 000 s
q
VERTICAL TRANSFER TIMING FOR 14.3 MHz OPERATION ¿FIELD ACCUMULATION MODE¡
453 1 6 10
874 875 878 879 882 883 OB2 OB1 OB2 OB5 OB6 2 3 6 7 10 11 14 15 18 19
GB RG GB RG GB RG GB RG GB RGGB RG GB RG GB RG
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