SGS Thomson Microelectronics BTB10-800CW, BTB10-800C, BTB10-800BW, BTB10-600CW, BTB10-600C Datasheet

®

BTA/BTB10 Series

SNUBBERLESS™ & STANDARD 10A TRIACS

MAIN FEATURES:

Symbol Value Unit

I

T(RMS)

V

DRM/VRRM

I

GT (Q1)

10 A

600 and 800 V

25 to 50 mA

DESCRIPTION

Available either in standard or snubberless
version, the BTA/B TB 1 0 tr i a c series is suitable for
general purpose AC swi tching. They can be used
as an ON/OFF function in applications such as
static relays, heating regulation, induction motor
starting circuits... or for phase c ontrol operation in
light dimmers, motor speed controllers, ...
The snubberless version (W suffix) is specially
recommended for use on inductive loads, thanks
to their high commutation performances.
By using an internal ceramic pad, the BTA series
provides voltage insulated tab (rated at 2500 V
RMS) complying with UL standards (File ref.:
E81734).

A1

A2

G

TO-220AB Insulated

(BTA10)

A2

G

A1

A2

A1

A2

G

TO-220AB

(BTB10)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

I

T(RMS)

I

TSM

²

I

dI/dt

V

DSM/VRSM

I

GM

P

G(AV)

T

stg

T

RMS on-state current
(full sine wave)

Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)

tI

²

t Value for fusing

Critical rate of rise of on-state current
I

G

Non repetitive surge peak off-state
voltage

Peak gate current tp = 20 µs Tj = 125°C 4 A
Average gate power dissipation Tj = 125°C 1 W

Storage junction temperature range
Operating junction temp erature range

j

April 2002 - Ed: 5A

= 2 x IGT , tr ≤ 100 ns

TO-220AB Tc = 105°C

10

TO-220AB Ins. Tc = 95°C

F = 60 Hz t = 16.7 ms 105 A
F = 50 Hz t = 20 ms 100

tp = 10 ms 55

F = 120 Hz Tj = 125°C 50 A/µs

V

tp = 10 ms Tj = 25°C

DRM/VRRM

+ 100

- 40 to + 150

- 40 to + 125

A

A

V

°C

²

s

1/6

BTA/BTB10 Series

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

■ SNUBBERLESS™ (3 Quadrants)

Symbol Test Conditions Quadrant BTA/BTB10

CW BW

(1)

I

GT

V
V

I

H

GT
GD

(2)

I

L

V

= 12 V RL = 33 Ω

D

VD = V

= 500 mA

I

T

IG = 1.2 I

RL = 3.3 kΩ Tj = 125°C

DRM

GT

I - II - III MAX. 35 50
I - II - III MAX. 1.3 V

I - II - III MIN. 0.2

MAX. 35 50 mA

I - III MAX. 50 70 mA

II 60 80

dV/dt (2) V

= 67 % V

D

gate open Tj = 125°C

DRM

MIN. 500 1000 V/µs

(dI/dt)c (2) Without snubber Tj = 125°C MIN. 5.5 9.0 A/ms

■ ST ANDARD (4 Quadrants)

Symbol Test Conditions Quadrant BTA/BTB10

CB

(1)

I

GT

V

GT

V

GD

I

(2)

H

I

L

V

= 12 V RL = 33 Ω

D

VD = V

= 500 mA

I

T

IG = 1.2 I

RL = 3.3 kΩ Tj = 125°C

DRM

GT

I - II - III

IV

MAX.

ALL MAX. 1.3 V
ALL MIN.

MAX. 25 50 mA

I - III - IV MAX. 40 50 mA

25
50

50

100

0.2 V

II 80 100

dV/dt (2)

= 67 %V

V

D

gate open Tj = 125°C

DRM

MIN. 200 400 V/µs

(dV/dt)c (2) (dI/dt)c = 4.4 A/ms Tj = 125°C MIN. 5 10 V/µs

Unit

Unit

mA

V

mA

STATIC CHARACTERISTI CS

Symbol Test Conditions Value Unit

V

(2) ITM = 14 A tp = 380 µs

TM

(2)

V

to

(2)

R

d

I

DRM

I

RRM

Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1

2/6

Threshold voltage Tj = 125°C MAX. 0.85 V
Dynamic resistance Tj = 125°C MAX. 40 mΩ
V

= V

DRM

RRM

Tj = 25°C MAX. 1.55 V

Tj = 25°C

Tj = 125°C 1 mA

MAX.

5µA

BTA/BTB10 Series

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th(j-c)

R

th(j-a)

PRODUCT SELECTOR

BTA/BTB10-xxxB X X 50 mA Sta ndar d TO-220AB
BTA/BTB10-xxxBW X X 50 mA Snubberle ss TO-220AB
BTA/BTB10-xxxC X X 25 mA Standar d TO-220AB
BTA/BTB10-xxxCW X X 35 mA Snubberle ss TO-220AB

BTB: Non insulated TO-220AB package

Junction to case (AC) TO-220AB 1.5 °C/W

TO-220AB Insulated 2.4

Junction to ambient TO-220AB

TO-220AB Insulated

Voltage (xxx)

Part Number

600 V 800 V

Sensitivity Type

60

Package

°C/W

ORDERING INFORMATION

BT A 10 - 600 BW (RG)

TRIAC
SERIES

SENSITIVITY & TYPE

INSULATION:
A: insulated
B: non insulated

CURRENT:10A

VOLTAGE:
600: 600V
800: 800V

B: 50mA STANDARD
BW: 50mA SNUBBERLESS
C: 25mA STANDARD
CW: 35mA SNUBBERLESS

OTHER INFORMATION

Part Number Marking Weight

BTA/BTB10-xxxyz BTA/BTB10xxxyz 2.3 g 250 Bulk
BTA/BTB10-xxxyzRG BTA/BTB10-xxxyz 2.3 g 50 Tube

Note: xxx = voltage, y = sensiti vity, z = type

quantity

PACKING MODE
Blank: Bulk
RG:Tube

Base

Packing

mode

3/6

BTA/BTB10 Series

Fig. 1: Maximum power dissipation versus RMS

on-state current (full cycle).

P (W)

13
12
11
10

9
8
7
6
5
4
3
2
1
0

012345678910

IT(RMS) (A)

Fig. 3: Relative variation of thermal im pedance
versus pulse duration.

K=[Zth/Rth]

1E+0

Zth(j-c)

1E-1

Zth(j-a)

Fig. 2: RMS on-state current versus case
temperature (full cycle).

IT(RMS) (A)

12
11
10

BTB

9
8
7

BTA

6
5
4
3
2
1
0

0 25 50 75 100 125

Tc(°C)

Fig. 4: On-state characteristics (maximum
values).

ITM (A)

100

10

Tj max.
Vto = 0.85 V
Rd = 40 m

W

Tj max

Tj=25°C

tp (s)

1E-2

1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Fig. 5: Surge peak on-state current versus
number of cycles.

ITSM (A)

110
100

90
80
70

Non repetitive
Tj initial=25°C

60
50
40
30

Repetitive

Tc=95°C

20
10

0

1 10 100 1000

Number of cycles

t=20ms

One cycle

1

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width

tp < 10ms, and corresponding value of I²t.

ITSM (A), I²t (A²s)

VTM (V)

1000

dI/dt limitation:

50A/µs

100

tp (ms)

10

0.01 0.10 1.00 10.00

Tj initial=25°C

ITSM

I²t

4/6

BTA/BTB10 Series

Fig. 7: Relative variation of gate trigger current,

holding current and latching current versus
junction temperature (typical values).

IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]

2.5

2.0

1.5

1.0

0.5

0.0

-40 -20 0 20 40 60 80 100 120 140

IGT

IH & IL

Tj(°C)

Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.

(dI/dt)c [Tj] / (dI/dt)c [Tj specified]

6
5

Fig. 8 : Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

C

B

BW/CW

(dV/dt)c (V/µs)

0.1 1.0 10.0 100.0

4
3
2
1
0

0 25 50 75 100 125

Tj (°C)

5/6

BTA/BTB10 Series

PACKAGE MECHANICAL DATA

TO-220AB (Plastic)

DIMENSIONS

B

L

I

A

C

b2

F

REF.

A 15.2 0 15.90 0.598 0.625
a1 3.75 0.147
a2 13.00 14.00 0.511 0.551

B 10.0 0 10.40 0.393 0.409

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

b1 0.61 0.88 0.024 0.034

l4

b2 1.23 1.32 0.048 0.051

C 4.40 4.60 0.173 0.181

a1

l3

l2

a2

c2

c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107

e 2.40 2.70 0.094 0.106

F 6.20 6.60 0.244 0.259

I 3.75 3.85 0.147 0.151

I4 15.80 16.40 16.80 0.622 0.646 0.661

b1

e

M

c1

L 2.65 2.95 0.104 0.116

l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or patent rights of STMi croelect ronics. Specifications mentioned in thi s publica tion are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authoriz ed for use as critical components in lif e support dev i ces or systems without express written approval of STMi croelectronics.

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