SGS Thomson Microelectronics BTB10-800CW, BTB10-800C, BTB10-800BW, BTB10-600CW, BTB10-600C Datasheet
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BTA/BTB10 Series
SNUBBERLESS™ & STANDARD 10A TRIACS
MAIN FEATURES:
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT (Q1)
10 A
600 and 800 V
25 to 50 mA
DESCRIPTION
Available either in standard or snubberless
version, the BTA/B TB 1 0 tr i a c series is suitable for
general purpose AC swi tching. They can be used
as an ON/OFF function in applications such as
static relays, heating regulation, induction motor
starting circuits... or for phase c ontrol operation in
light dimmers, motor speed controllers, ...
The snubberless version (W suffix) is specially
recommended for use on inductive loads, thanks
to their high commutation performances.
By using an internal ceramic pad, the BTA series
provides voltage insulated tab (rated at 2500 V
RMS) complying with UL standards (File ref.:
E81734).
A1
A2
G
TO-220AB Insulated
(BTA10)
A2
G
A1
A2
A1
A2
G
TO-220AB
(BTB10)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
I
T(RMS)
I
TSM
²
I
dI/dt
V
DSM/VRSM
I
GM
P
G(AV)
T
stg
T
RMS on-state current
(full sine wave)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
tI
²
t Value for fusing
Critical rate of rise of on-state current
I
G
Non repetitive surge peak off-state
voltage
Peak gate current tp = 20 µs Tj = 125°C 4 A
Average gate power dissipation Tj = 125°C 1 W
Storage junction temperature range
Operating junction temp erature range
j
April 2002 - Ed: 5A
= 2 x IGT , tr ≤ 100 ns
TO-220AB Tc = 105°C
10
TO-220AB Ins. Tc = 95°C
F = 60 Hz t = 16.7 ms 105 A
F = 50 Hz t = 20 ms 100
tp = 10 ms 55
F = 120 Hz Tj = 125°C 50 A/µs
V
tp = 10 ms Tj = 25°C
DRM/VRRM
+ 100
- 40 to + 150
- 40 to + 125
A
A
V
°C
²
s
1/6
BTA/BTB10 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■ SNUBBERLESS™ (3 Quadrants)
Symbol Test Conditions Quadrant BTA/BTB10
CW BW
(1)
I
GT
V
V
I
H
GT
GD
(2)
I
L
V
= 12 V RL = 33 Ω
D
VD = V
= 500 mA
I
T
IG = 1.2 I
RL = 3.3 kΩ Tj = 125°C
DRM
GT
I - II - III MAX. 35 50
I - II - III MAX. 1.3 V
I - II - III MIN. 0.2
MAX. 35 50 mA
I - III MAX. 50 70 mA
II 60 80
dV/dt (2) V
= 67 % V
D
gate open Tj = 125°C
DRM
MIN. 500 1000 V/µs
(dI/dt)c (2) Without snubber Tj = 125°C MIN. 5.5 9.0 A/ms
■ ST ANDARD (4 Quadrants)
Symbol Test Conditions Quadrant BTA/BTB10
CB
(1)
I
GT
V
GT
V
GD
I
(2)
H
I
L
V
= 12 V RL = 33 Ω
D
VD = V
= 500 mA
I
T
IG = 1.2 I
RL = 3.3 kΩ Tj = 125°C
DRM
GT
I - II - III
IV
MAX.
ALL MAX. 1.3 V
ALL MIN.
MAX. 25 50 mA
I - III - IV MAX. 40 50 mA
25
50
50
100
0.2 V
II 80 100
dV/dt (2)
= 67 %V
V
D
gate open Tj = 125°C
DRM
MIN. 200 400 V/µs
(dV/dt)c (2) (dI/dt)c = 4.4 A/ms Tj = 125°C MIN. 5 10 V/µs
Unit
Unit
mA
V
mA
STATIC CHARACTERISTI CS
Symbol Test Conditions Value Unit
V
(2) ITM = 14 A tp = 380 µs
TM
(2)
V
to
(2)
R
d
I
DRM
I
RRM
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
2/6
Threshold voltage Tj = 125°C MAX. 0.85 V
Dynamic resistance Tj = 125°C MAX. 40 mΩ
V
= V
DRM
RRM
Tj = 25°C MAX. 1.55 V
Tj = 25°C
Tj = 125°C 1 mA
MAX.
5µA
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