SGS Thomson Microelectronics BTB08-A, BTB08-S, BTA08-S, BTA08-A Datasheet
BTA0 8 S/A
BTB0 8 S/A
March 1995
SENSITIVE GATE TRIACS
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current
(360° conduction angle)
BTA Tc = 75°C8 A
BTB Tc = 80°C
I
TSM
Non repetitive surge peak on-state current
( Tj initial = 25°C)
tp = 8.3 ms 84 A
tp = 10 ms 80
I2tI
2
t value tp = 10 ms 32 A2s
dI/dt Critical rate of rise of on-state current
Gate supply : IG= 50mA diG/dt = 0.1A/µs
Repetitive
F = 50 Hz
10 A/µs
Non
Repetitive
50
Tstg
Tj
Storage and operating junction temperature range - 40 to + 150
- 40 to + 110
°C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260 °C
TO220AB
(Plastic)
A1
A2
G
.VERYLOWI
GT
=10mA max
.LOW I
H
= 25mAmax
.BTA Family :
INSULATINGVOLTAGE= 2500V
(RMS)
(ULRECOGNIZED: E81734)
DESCRIPTION
Symbol Parameter BTA / BTB08- Unit
400 S/A 600 S/A 700 S/A
V
DRM
V
RRM
Repetitive peak off-state voltage
Tj = 110°C
400 600 700 V
ABSOLUTE RATINGS (limitingvalues)
FEATURES
The BTA/BTB08 S/A triac family are high performance glass passivatedPNPN devices.
These parts are suitables for general purpose applications where gate high sensitivity is required.
Application on 4Q such as phase control and static
switching.
1/5
GATE CHARACTERISTICS (maximumvalues)
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC BTA 4.4 °C/W
BTB 3.2
Rth (j-c) AC Junction to case for360° conduction angle
( F= 50 Hz)
BTA 3.3 °C/W
BTB 2.4
Symbol Test Conditions Quadrant Suffix Unit
SA
IGTVD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 10 10 mA
IV MAX 10 25
V
GT
VD=12V (DC) RL=33Ω Tj=25°C I-II-III-IV MAX 1.5 V
V
GD
VD=V
DRMRL
=3.3kΩ Tj=110°C I-II-III-IV MIN 0.2 V
tgt VD=V
DRMIG
= 40mA
dIG/dt = 0.5A/µs
Tj=25°C I-II-III-IV TYP 2 µs
I
L
IG= 1.2 I
GT
Tj=25°C I-III-IV TYP 20 20 mA
II 40 40
IH*I
T
= 100mA gate open Tj=25°C MAX 25 25 mA
VTM*ITM= 11A tp= 380µs Tj=25°C MAX 1.75 V
I
DRM
I
RRM
V
DRM
Rated
V
RRM
Rated
Tj=25°C MAX 0.01 mA
Tj=110°C MAX 0.75
dV/dt * Linear slope up to VD=67%V
DRM
gate open
Tj=110°C MIN 10 10 V/µs
(dV/dt)c * (dI/dt)c= 3.5A/ms Tj=110°C TYP 5 5 V/µs
* For either polarity of electrode A2voltage with reference to electrode A1.
P
G (AV)
=1W PGM= 10W (tp = 20 µs) IGM= 4A (tp = 20 µs) VGM= 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTA08 S/A / BTB08 S/A
2/5
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