SGS Thomson Microelectronics BTB08-A, BTB08-S, BTA08-S, BTA08-A Datasheet

BTA0 8 S/A
BTB0 8 S/A

March 1995

SENSITIVE GATE TRIACS

Symbol Parameter Value Unit

I

T(RMS)

RMS on-state current
(360° conduction angle)

BTA Tc = 75°C8 A
BTB Tc = 80°C

I

TSM

Non repetitive surge peak on-state current
( Tj initial = 25°C)

tp = 8.3 ms 84 A

tp = 10 ms 80

I2tI

2

t value tp = 10 ms 32 A2s

dI/dt Critical rate of rise of on-state current

Gate supply : IG= 50mA diG/dt = 0.1A/µs

Repetitive
F = 50 Hz

10 A/µs

Non

Repetitive

50

Tstg

Tj

Storage and operating junction temperature range - 40 to + 150

- 40 to + 110

°C
°C

Tl Maximum lead temperature for soldering during 10 s at 4.5 mm

from case

260 °C

TO220AB

(Plastic)

A1

A2

G

.VERYLOWI

GT

=10mA max

.LOW I

H

= 25mAmax

.BTA Family :

INSULATINGVOLTAGE= 2500V

(RMS)

(ULRECOGNIZED: E81734)

DESCRIPTION

Symbol Parameter BTA / BTB08- Unit

400 S/A 600 S/A 700 S/A

V

DRM

V

RRM

Repetitive peak off-state voltage
Tj = 110°C

400 600 700 V

ABSOLUTE RATINGS (limitingvalues)

FEATURES

The BTA/BTB08 S/A triac family are high perform­ance glass passivatedPNPN devices.
These parts are suitables for general purpose ap­plications where gate high sensitivity is required.
Application on 4Q such as phase control and static
switching.

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GATE CHARACTERISTICS (maximumvalues)

Symbol Parameter Value Unit

Rth (j-a) Junction to ambient 60 °C/W

Rth (j-c) DC Junction to case for DC BTA 4.4 °C/W

BTB 3.2

Rth (j-c) AC Junction to case for360° conduction angle

( F= 50 Hz)

BTA 3.3 °C/W
BTB 2.4

Symbol Test Conditions Quadrant Suffix Unit

SA

IGTVD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 10 10 mA

IV MAX 10 25

V

GT

VD=12V (DC) RL=33Ω Tj=25°C I-II-III-IV MAX 1.5 V

V

GD

VD=V

DRMRL

=3.3kΩ Tj=110°C I-II-III-IV MIN 0.2 V

tgt VD=V

DRMIG

= 40mA

dIG/dt = 0.5A/µs

Tj=25°C I-II-III-IV TYP 2 µs

I

L

IG= 1.2 I

GT

Tj=25°C I-III-IV TYP 20 20 mA

II 40 40

IH*I

T

= 100mA gate open Tj=25°C MAX 25 25 mA

VTM*ITM= 11A tp= 380µs Tj=25°C MAX 1.75 V

I

DRM

I

RRM

V

DRM

Rated

V

RRM

Rated

Tj=25°C MAX 0.01 mA

Tj=110°C MAX 0.75

dV/dt * Linear slope up to VD=67%V

DRM

gate open

Tj=110°C MIN 10 10 V/µs

(dV/dt)c * (dI/dt)c= 3.5A/ms Tj=110°C TYP 5 5 V/µs

* For either polarity of electrode A2voltage with reference to electrode A1.

P

G (AV)

=1W PGM= 10W (tp = 20 µs) IGM= 4A (tp = 20 µs) VGM= 16V (tp = 20 µs).

ELECTRICAL CHARACTERISTICS

THERMAL RESISTANCES

BTA08 S/A / BTB08 S/A

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Package I

T(RMS)

V

DRM/VRRM

Sensitivity Specification

AV S A

BTA
(Insulated)

8 400 X X

600 X X
700 X X

BTB
(Uninsulated)

400 X X
600 X X
700 X X

ORDERING INFORMATION

Fig.1 : Maximum RMS power dissipation versus RMS
on-state current(F=50Hz).
(curves are cut off by (dI/dt)c limitation)

Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (T

amb

and T

case

) for different thermal resistances heatsink +

contact (BTA).

Fig.4 : RMS on-state current versus case temperature.Fig.3 : Correlation between maximum RMS power

dissipation and maximum allowable temperatures (T

amb

and T

case

) for different thermal resistances heatsink +

contact (BTB).

BTA08 S/A / BTB08 S/A

3/5

Fig.6 : Relative variation of gate trigger current and
holding current versus junction temperature.

Fig.7 : Non Repetitive surge peak on-state current
versus number of cycles.

Fig.8 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t ≤ 10ms, and
corresponding value of I2t.

Fig.9 : On-state characteristics (maximum values).

1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

0.01

0.1

1

Zth/Rth

Zth( j-c)

Zth(j-a)

tp(s)

Fig.5 : Relative variation of thermal impedance versus
pulse duration.

BTA08 S/A / BTB08 S/A

4/5

PACKAGE MECHANICAL DATA

TO220AB Plastic

Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.

I

==

A

G

D

B

C

F

P

N

O

M

L

J

H

REF. DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

A 10.20 10.50 0.401 0.413
B 14.23 15.87 0.560 0.625
C 12.70 14.70 0.500 0.579
D 5.85 6.85 0.230 0.270
F 4.50 0.178
G 2.54 3.00 0.100 0.119
H 4.48 4.82 0.176 0.190

I 3.55 4.00 0.140 0.158

J 1.15 1.39 0.045 0.055

L 0.35 0.65 0.013 0.026

M 2.10 2.70 0.082 0.107

N 4.58 5.58 0.18 0.22

O 0.80 1.20 0.031 0.048

P 0.64 0.96 0.025 0.038

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication orotherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.

 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.

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BTA08 S/A / BTB08 S/A

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