Samsung M471B1G73AH0 User Manual
Rev. 1.0, Jul. 2010
M471B1G73AH0
204pin Unbuffered SODIMM
based on 4Gb A-die
78FBGA with Lead-Free & Halogen-Free
(RoHS compliant)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
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ⓒ 2010 Samsung Electronics Co., Ltd. All rights reserved.
- 1 -
Rev. 1.0
Unbuffered SODIMM datasheet DDR3 SDRAM
Revision History
Revision No. History Draft Date Remark Editor
1.0 - First Release Jul. 2010 - S.H.Kim
- 2 -
Rev. 1.0
Unbuffered SODIMM datasheet DDR3 SDRAM
Table Of Contents
204pin Unbuffered SODIMM based on 4Gb A-die
1. DDR3 Unbuffered SODIMM Ordering Information........................................................................................................4
2. Key Features.................................................................................................................................................................4
3. Address Configuration ..................................................................................................................................................4
4. x64 DIMM Pin Configurations (Front side/Back Side)...................................................................................................5
5. Pin Description .............................................................................................................................................................6
6. Input/Output Functional Description..............................................................................................................................7
7. Function Block Diagram:...............................................................................................................................................8
7.1 8GB, 1Gx64 Module (Populated as 2 ranks of x8 DDR3 SDRAMs) .......................................................................8
8. Absolute Maximum Ratings ..........................................................................................................................................9
8.1 Absolute Maximum DC Ratings............................................................................................................................... 9
8.2 DRAM Component Operating Temperature Range ................................................................................................ 9
9. AC & DC Operating Conditions.....................................................................................................................................9
9.1 Recommended DC Operating Conditions (SSTL-15).............................................................................................. 9
10. AC & DC Input Measurement Levels .......................................................................................................................... 10
10.1 AC & DC Logic Input Levels for Single-ended Signals.......................................................................................... 10
10.2 V
10.3 AC and DC Logic Input Levels for Differential Signals .......................................................................................... 12
10.3.1. Differential Signals Definition ......................................................................................................................... 12
10.3.2. Differential Swing Requirement for Clock (CK-CK
10.3.3. Single-ended Requirements for Differential Signals ...................................................................................... 13
10.3.4. Differential Input Cross Point Voltage ............................................................................................................ 14
10.4 Slew Rate Definition for Single Ended Input Signals .............................................................................................14
10.5 Slew rate definition for Differential Input Signals ...................................................................................................14
11. AC & DC Output Measurement Levels .......................................................................................................................15
11.1 Single Ended AC and DC Output Levels............................................................................................................... 15
11.2 Differential AC and DC Output Levels ................................................................................................................... 15
11.3 Single-ended Output Slew Rate ............................................................................................................................ 15
11.4 Differential Output Slew Rate ................................................................................................................................16
12. DIMM IDD specification definition ............................................................................................................................... 17
13. IDD SPEC Table .........................................................................................................................................................19
14. Input/Output Capacitance ...........................................................................................................................................20
14.1 2Rx8 2GB SODIMM .............................................................................................................................................. 20
15. Electrical Characteristics and AC timing .....................................................................................................................21
15.1 Refresh Parameters by Device Density.................................................................................................................21
15.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin ................................................................ 21
15.3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin ................................................................. 21
15.3.1. Speed Bin Table Notes .................................................................................................................................. 25
16. Timing Parameters by Speed Grade ..........................................................................................................................26
16.1 Jitter Notes ............................................................................................................................................................ 29
16.2 Timing Parameter Notes........................................................................................................................................ 30
17. Physical Dimensions :................................................................................................................................................. 31
17.1 512Mx8 based 1Gx64 Module (2 Ranks) - M471B1G73AH0................................................................................ 31
Tolerances....................................................................................................................................................11
REF
) and Strobe (DQS-DQS) ................................................ 12
- 3 -
Rev. 1.0
Unbuffered SODIMM datasheet DDR3 SDRAM
1. DDR3 Unbuffered SODIMM Ordering Information
Part Number
M471B1G73AH0-CF8/H9 8GB 1Gx64 512Mx8(K4B4G0846A-HC##)*16 2 30mm
NOTE :
1. "##" - F8/H9
2. F8 - 1066Mbps 7-7-7 & H9 - 1333Mbps 9-9-9
- DDR3-1333(9-9-9) is backward compatible to DDR3-1066(7-7-7)
2
Density Organization Component Composition
Number of
Rank
Height
2. Key Features
Speed
tCK(min) 2.5 1.875 1.5 ns
CAS Latency 6 79tCK
tRCD(min) 15 13.125 13.5 ns
tRP(min) 15 13.125 13.5 ns
tRAS(min) 37.5 37.5 36 ns
tRC(min) 52.5 50.625 49.5 ns
• JEDEC standard 1.5V ± 0.075V Power Supply
•V
= 1.5V ± 0.075V
DDQ
• 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 5,6,7,8,9
• Programmable Additive Latency(Posted CAS) : 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 5(DDR3-800), 6(DDR3-1066) and 7(DDR3-1333)
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or
write [either On the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower then T
• Asynchronous Reset
DDR3-800 DDR3-1066 DDR3-1333
6-6-6 7-7-7 9-9-9
85°C, 3.9us at 85°C < T
CASE
CASE
≤ 95°C
Unit
3. Address Configuration
Organization Row Address Column Address Bank Address Auto Precharge
512Mx8(4Gb) based Module A0-A15 A0-A9 BA0-BA2 A10/AP
- 4 -
Rev. 1.0
Unbuffered SODIMM datasheet DDR3 SDRAM
4. x64 DIMM Pin Configurations (Front side/Back Side)
Pin Front Pin Back Pin Front Pin Back Pin Front Pin Back
1
3
V
REFDQ
V
2
SS
4 DQ4 KEY
V
SS
71
V
SS
72
V
SS
5 DQ0 6 DQ5 73 CKE0 74 CKE1
7DQ18
9
V
SS
10 DQS077 NC 78
V
SS
75
11 DM0 12DQS079 BA2 80
13
V
SS
14
V
SS
81
15 DQ2 16 DQ6 83 A12/BC
V
DD
V
DD
76
82
V
A15
A14
V
DD
3
3
DD
84 A11 153 DM5 154 DQS5
17 DQ3 18 DQ7 85 A9 86 A7 155
19
V
SS
20
V
SS
87
V
DD
88
V
DD
21 DQ8 22 DQ12 89 A8 90 A6 159 DQ43 160 DQ47
23 DQ9 24 DQ13 91 A5 92 A4 161
25
27 DQS
V
SS
26
1 28 DM1 95 A3 96 A2 165 DQ49 166 DQ53
29 DQS1 30 RESET
31
V
SS
32
V
SS
93
V
DD
94
V
DD
97 A1 98 A0 167
V
SS
99
V
DD
100
V
DD
33 DQ10 34 DQ14 101 CK0 102 CK1 171
35 DQ11 36 DQ15 103 CK0104CK1 173
37
V
SS
38
V
SS
39 DQ16 40 DQ20
41 DQ17 42 DQ21
43
45 DQS
V
SS
44
246 DM2
47 DQS2 48
49
V
SS
50 DQ22
V
SS
V
SS
51 DQ18 52 DQ23
53 DQ19 54
55
V
SS
56 DQ28
V
SS
57 DQ24 58 DQ29
59 DQ25 60
61
V
SS
62 DQS3
V
SS
105 V
107
A10/AP 108 BA1 177 DQ51 178
109
111 V
113
115
117 V
119
121
123 V
125
127 V
129
DD
106
V
DD
BA0 110 RAS 179
DD
112
V
DD
WE 11 4 S 0 183 DQ57 184
CAS
DD
3
A13
S
1 122 NC 191 DQ58 192 DQ62
DD
TEST 126
SS
116 ODT0 185
118
V
DD
120ODT1189
124
128
V
V
REFCA
V
DD
SS
DQ32 130 DQ36 199
63 DM3 64 DQS3 131 DQ33 132 DQ37 201 SA1 202 SCL
65
V
SS
66
V
SS
133 V
SS
134
V
SS
67 DQ26 68 DQ30 135 DQS4136 DM4
69 DQ27 70 DQ31
137
DQS4 138
V
SS
NOTE :
1. NC = No Connect, NU = Not Used, RFU = Reserved Future Use
2. TEST(pin 125) is reserved for bus analysis probes and is NC on normal memory modules.
3. This address might be connected to NC balls of the DRAMs (depending on density); either way they will be connected to the termination resistor.
139 V
141
143
145 V
147
149
151
SS
DQ34 142 DQ39
DQ35 144
SS
DQ40 148 DQ45
DQ41 150
V
SS
V
SS
140 DQ38
V
SS
146 DQ44
V
SS
152 DQS5
156
V
SS
157 DQ42 158 DQ46
V
SS
162
V
SS
163 DQ48 164 DQ52
169
V
SS
DQS
DQS6
V
SS
168
6
170
172
174 DQ54
V
SS
DM6
V
SS
175 DQ50 176 DQ55
V
SS
V
SS
180 DQ60
181 DQ56 182 DQ61
V
SS
V
SS
186 DQS7
187 DM7 188 DQS7
V
SS
190
V
SS
193 DQ59 194 DQ63
195
V
SS
196
V
SS
197 SA0 198 NC
203
V
DDSPD
V
TT
200 SDA
204
V
TT
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
- 5 -
Rev. 1.0
Unbuffered SODIMM datasheet DDR3 SDRAM
5. Pin Description
Pin Name Description Number Pin Name Description Number
CK0, CK1 Clock Inputs, positive line 2 DQ0-DQ63 Data Input/Output 64
CK
0, CK1 Clock Inputs, negative line 2 DM0-DM7
Data Masks/ Data strobes,
Termination data strobes
CKE0, CKE1 Clock Enables 2 DQS0-DQS7 Data strobes 8
RAS
CAS
WE
S
0, S1 Chip Selects 2
A0-A9, A11,
A13-A15
A10/AP Address Input/Autoprecharge 1
A12/BC
BA0-BA2 SDRAM Bank Addresses 3
Row Address Strobe 1 DQS0-DQS7 Data strobes complement 8
Column Address Strobe 1 RESET Reset Pin 1
Write Enable 1 TEST
V
DD
Address Inputs 14
Address Input/Burst chop 1
V
V
REFDQ
V
REFCA
V
DDSPD
V
SS
TT
Logic Analyzer specific test pin (No connect
on SODIMM)
Core and I/O Power 18
Ground 52
Input/Output Reference 2
SPD and Temp sensor Power 1
Termination Voltage 2
ODT0, ODT1 On-die termination control 2 NC Reserved for future use 3
SCL Serial Presence Detect (SPD) Clock Input 1 Total 204
SDA SPD Data Input/Output 1
SA0-SA1 SPD Address 2
NOTE:
* The V
DD
and V
pins are tied common to a single power-plane on these designs.
DDQ
8
1
- 6 -
Rev. 1.0
Unbuffered SODIMM datasheet DDR3 SDRAM
6. Input/Output Functional Description
Symbol Typ e Function
CK0-CK1
-CK1
CK0
CKE0-CKE1 Input
S
0-S1 Input
AS, CAS, WE Input
R
BA0-BA2 Input Selects which DDR3 SDRAM internal bank of eight is activated.
ODT0-ODT1 Input Asserts on-die termination for DQ, DM, DQS, and DQS signals if enabled via the DDR3 SDRAM mode register.
A0-A9,
A10/AP,
A11
A12/BC
A13-A15
DQ0-DQ63 I/O Data Input/Output pins.
DM0-DM7 Input
DQS0-DQS7
DQS
0-DQS7
V
DD,VDDSPD,
V
SS
V
REFDQ,
V
REFCA
SDA I/O
SCL Input This signal is used to clock data into and out of the SPD EEPROM and Temp sensor.
SA0-SA1 Input Address pins used to select the Serial Presence Detect and Temp sensor base address.
TEST I/O The TEST pin is reserved for bus analysis tools and is not connected on normal memory modules
RESET
Input
Input
I/O
Supply Power supplies for core, I/O, Serial Presence Detect, Temp sensor, and ground for the module.
Supply Reference voltage for SSTL15 inputs.
Input RESET In Active Low This signal resets the DDR3 SDRAM
The system clock inputs. All address and command lines are sampled on the cross point of the rising edge of CK and
falling edge of CK. A Delay Locked Loop (DLL) circuit is driven from the clock inputs and output timing for read operations is synchronized to the input clock.
Activates the DDR3 SDRAM CK signal when high and deactivates the CK signal when low. By deactivating the clocks,
CKE low initiates the Power Down mode or the Self Refresh mode.
Enables the associated DDR3 SDRAM command decoder when low and disables the command decoder when high.
When the command decoder is disabled, new commands are ignored but previous operations continue. Rank 0 is
selected by S
When sampled at the cross point of the rising edge of CK and falling edge of CK
the operation to be executed by the SDRAM.
During a Bank Activate command cycle, defines the row address when sampled at the cross point of the rising edge of
CK and falling edge of CK
cross point of the rising edge of CK and falling edge of CK
autoprecharge operation at the end of the burst read or write cycle. If AP is high, autoprecharge is selected and BA0BAn defines the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge command cycle,
AP is used in conjunction with BA0-BAn to control which bank(s) to precharge. If AP is high, all banks will be precharged regardless of the state of BA0-BAn inputs. If AP is low, then BA0-BAn are used to define which bank to precharge.A12(BC
performed (HIGH, no burst chop; LOW, burst chopped)
The data write masks, associated with one data byte. In Write mode, DM operates as a byte mask by allowing input
data to be written if it is low but blocks the write operation if it is high. In Read mode, DM lines have no effect.
The data strobes, associated with one data byte, sourced with data transfers. In Write mode, the data strobe is
sourced by the controller and is centered in the data window. In Read mode, the data strobe is sourced by the DDR3
SDRAMs and is sent at the leading edge of the data window. DQS
the crosspoint of respective DQS and DQS
This is a bidirectional pin used to transfer data into or out of the SPD EEPROM and Temp sensor. A resistor must be
connected from the SDA bus line to V
0; Rank 1 is selected by S1.
, signals CAS, RAS, and WE define
. During a Read or Write command cycle, defines the column address when sampled at the
. In addition to the column address, AP is used to invoke
) is sampled during READ and WRITE commands to determine if burst chop (on-the fly) will be
.
on the system planar to act as a pull up.
DDSPD
signals are complements, and timing is relative to
- 7 -
Rev. 1.0
V7
V8
V5
S1
RAS
CASWECK1
CK1
CKE1
ODT1
A[0:N]
/BA[0:N]
S0
CK0
CK0
CKE0
ODT0
DQS3
DQS3
DM3
DQS
DQS
D11
CS
RAS
CASWECKCKCKE
ODT
A[N:0]/BA[N:0]
ZQ
DQ[0:7]
DM
240Ω
± 1%
DQ[24:31]
D3
CS
RAS
CASWECKCKCKE
ODT
A[N:0]/BA[N:0]
ZQ
240Ω
± 1%
Vtt
V
DD
Vtt
Rank0
Rank1
NOTE :
1. DQ wiring may differ from that shown however ,DQ, DM, DQS and DQS
relationships are maintained as shown
V
SS
V
DD
D0 - D15
V
REFCA
V
DDSPD
SPD
CK0
V
REFDQ
D0 - D15
D0 - D15
D0 - D15, SPD
V
tt
CK1
CK0
CK1
RESET
V
tt
D8 - D15
D0 - D7
D0 - D7
D8 - D15
D0 - D7
V6
V2
V3
D6D12D3D9
V
tt
Address and Controllines
DQS
DQS
DQ[0:7]
DM
DQS1
DQS1
DM1
DQS
DQS
D1
CS
RAS
CASWECKCKCKE
ODT
A[N:0]/BA[N:0]
ZQ
DQ[0:7]
DM
240Ω
± 1%
DQ[8:15]
D9
CS
RAS
CASWECKCKCKE
ODT
A[N:0]/BA[N:0]
ZQ
240Ω
± 1%
DQS
DQS
DQ[0:7]
DM
DQS0
DQS0
DM0
DQS
DQS
D0
CS
RAS
CASWECKCKCKE
ODT
A[N:0]/BA[N:0]
ZQ
DQ[0:7]
DM
240Ω
± 1%
DQ[0:7]
D8
CS
RAS
CASWECKCKCKE
ODT
A[N:0]/BA[N:0]
ZQ
240Ω
± 1%
DQS
DQS
DQ[0:7]
DM
DQS2
DQS2
DM2
DQS
DQS
D2
CS
RAS
CASWECKCKCKE
ODT
A[N:0]/BA[N:0]
ZQ
DQ[0:7]
DM
240
Ω
± 1%
DQ[16:23]
D10
CS
RAS
CASWECKCKCKE
ODT
A[N:0]/BA[N:0]
ZQ
240Ω
± 1%
DQS
DQS
DQ[0:7]
DM
DQS
DQS
D4
CS
RAS
CASWECKCKCKE
ODT
A[N:0]/BA[N:0]
ZQ
DQ[0:7]
DM
240Ω
± 1%
D12
CS
RAS
CASWECKCKCKE
ODT
A[N:0]/BA[N:0]
ZQ
240Ω
± 1%
DQS
DQS
DQ[0:7]
DM
DQS
DQS
D14
CS
RAS
CASWECKCKCKE
ODT
A[N:0]/BA[N:0]
ZQ
DQ[0:7]
DM
240Ω
± 1%
D6
CS
RAS
CASWECKCKCKE
ODT
A[N:0]/BA[N:0]
ZQ
240Ω
± 1%
DQS
DQS
DQ[0:7]
DM
DQS
DQS
D15
CS
RAS
CASWECKCKCKE
ODT
A[N:0]/BA[N:0]
ZQ
DQ[0:7]
DM
240Ω
± 1%
D7
CS
RAS
CASWECKCKCKE
ODT
A[N:0]/BA[N:0]
ZQ
240Ω
± 1%
DQS
DQS
DQ[0:7]
DM
DQS
DQS
D13
CS
RAS
CASWECKCKCKE
ODT
A[N:0]/BA[N:0]
ZQ
DQ[0:7]
DM
240
Ω
± 1%
D5
CS
RAS
CASWECKCKCKE
ODT
A[N:0]/BA[N:0]
ZQ
240Ω
± 1%
DQS
DQS
DQ[0:7]
DM
DQS4
DQS4
DM4
DQ[32:39]
DQS6
DQS6
DM6
DQ[48:55]
DQS7
DQS7
DM7
DQ[56:63]
DQS5
DQS5
DM5
DQ[40:47]
V
DD
D7D5D10D8
V1
V4
V9
V7
V6
V9
V8
V4
V3
D15D13D2D0
D14D4D11D1
V1
V2
V5
V1
Vtt
A0
A1
A2
SA0
SA1
SCL
SDA
WP
SCL
(SPD)
Unbuffered SODIMM datasheet DDR3 SDRAM
7. Function Block Diagram:
7.1 8GB, 1Gx64 Module (Populated as 2 ranks of x8 DDR3 SDRAMs)
- 8 -
Rev. 1.0
Unbuffered SODIMM datasheet DDR3 SDRAM
8. Absolute Maximum Ratings
8.1 Absolute Maximum DC Ratings
Symbol Parameter Rating Units NOTE
V
DD
V
Voltage on V
DDQ
V
NOTE :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.
3. VDD and V
equal to or less than 300mV.
Voltage on any pin relative to V
IN, VOUT
T
Storage Temperature -55 to +100 °C 1, 2
STG
DDQ
Voltage on VDD pin relative to V
pin relative to V
DDQ
must be within 300mV of each other at all times;and V
SS
SS
SS
must be not greater than 0.6 x V
REF
8.2 DRAM Component Operating Temperature Range
Symbol Parameter rating Unit NOTE
T
OPER
NOTE :
1. Operating Temperature T
JESD51-2.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case temperature must be maintained between 0-85°C under all operating conditions
3. Some applications require operation of the Extended Temperature Range between 85°C and 95°C case temperature. Full specifications are guaranteed in this range, but the
following additional conditions apply:
a) Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to 3.9us. It is also possible to specify a component with 1X refresh (tREFI
to 7.8us) in the Extended Temperature Range.
b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the Manual Self-Refresh mode with Extended Temperature
Range capability (MR2 A6 = 0b and MR2 A7 = 1b), in this case IDD6 current can be increased around 10~20% than normal Temperature range.
is the case surface temperature on the center/top side of the DRAM. For measurement conditions, please refer to the JEDEC document
OPER
Operating Temperature Range 0 to 95 °C 1, 2, 3
-0.4 V ~ 1.975 V V 1,3
-0.4 V ~ 1.975 V V 1,3
-0.4 V ~ 1.975 V V 1
, When VDD and V
DDQ
are less than 500mV; V
DDQ
REF
may be
9. AC & DC Operating Conditions
9.1 Recommended DC Operating Conditions (SSTL-15)
Symbol Parameter
V
DD
V
DDQ
NOTE:
1. Under all conditions V
2. V
tracks with VDD. AC parameters are measured with VDD and V
DDQ
Supply Voltage 1.425 1.5 1.575 V 1,2
Supply Voltage for Output 1.425 1.5 1.575 V 1,2
must be less than or equal to VDD.
DDQ
tied together.
DDQ
Min. Typ . Max.
Rating
Units NOTE
- 9 -
Rev. 1.0
Unbuffered SODIMM datasheet DDR3 SDRAM
10. AC & DC Input Measurement Levels
10.1 AC & DC Logic Input Levels for Single-ended Signals
[ Table 1 ] Single-ended AC & DC input levels for Command and Address
Symbol Parameter
(DC100)
V
IH.CA
V
(DC100)
IL.CA
V
(AC175)
IH.CA
V
(AC175)
IL.CA
V
(AC150)
IH.CA
V
(AC150)
IL.CA
V
REFCA
NOTE :
1. For input only pins except RESET
2. See ’Overshoot/Undershoot Specification’ on page 18.
3. The AC peak noise on V
4. For reference : approx. V
5. V
(dc) is used as a simplified symbol for V
IH
6. V
(dc) is used as a simplified symbol for V
IL
7. V
(ac) is used as a simplified symbol for V
IH
used when VREF + 150mV is referenced.
8. V
(ac) is used as a simplified symbol for V
IL
when V
REF
DC input logic high
DC input logic low
AC input logic high
AC input logic low -
AC input logic high
AC input logic low -
Reference Voltage for ADD,
(DC)
CMD inputs
, V
may not allow V
REF
/2 ± 15mV
DD
- 150mV is referenced.
REF
= V
(DC)
REFCA
to deviate from V
REF
(DC100)
IH.CA
(DC100)
IL.CA
(AC175) and V
IH.CA
(AC175) and V
IL.CA
Min. Max.
V
REF
V
V
REF
V
REF
0.49*V
(DC) by more than ± 1% VDD (for reference : approx. ± 15mV)
REF
(AC150); V
IH.CA
(AC150); V
IL.CA
DDR3-800/1066/1333/1600
+ 100 V
SS
V
REF
+ 175
V
REF
+150
V
REF
DD
(AC175) value is used when V
IH.CA
(AC175) value is used when V
IL.CA
0.51*V
+ 175mV is referenced and V
REF
- 175mV is referenced and V
REF
Unit NOTE
DD
- 100
mV 1,5
mV 1,6
- mV 1,2,7
- 175
mV 1,2,8
- mV 1,2,7
-150
DD
mV 1,2,8
V3,4
(AC150) value is
IH.CA
(AC150) value is used
IL.CA
[ Table 2 ] Single-ended AC & DC input levels for DQ and DM
Symbol Parameter
(DC100)
V
IH.DQ
V
(DC100)
IL.DQ
V
(AC175)
IH.DQ
V
(AC175)
IL.DQ
V
(AC150)
IH.DQ
V
(AC150)
IL.DQ
V
REF
DQ
NOTE :
1. For input only pins except RESET
2. See ’Overshoot/Undershoot Specification’ on page 18.
3. The AC peak noise on V
4. For reference : approx. V
5. V
(dc) is used as a simplified symbol for V
IH
6. V
(dc) is used as a simplified symbol for V
IL
7. V
(ac) is used as a simplified symbol for V
IH
when V
8. V
(ac) is used as a simplified symbol for V
IL
- 150mV is referenced.
V
REF
DC input logic high
DC input logic low
AC input logic high
AC input logic low -
AC input logic high
AC input logic low NOTE 2
Reference Voltage for DQ,
(DC)
DM inputs
, V
= V
REF
REFDQ
may not allow V
REF
DD
+ 150mV is referenced.
REF
/2 ± 15mV
REF
IH.DQ
IL.DQ
IH.DQ
IL.DQ
(DC)
to deviate from V
(DC100)
(DC100)
(AC175), V
(AC175), V
DDR3-800/1066 DDR3-1333/1600
Min. Max. Min. Max.
V
+ 100 V
REF
V
SS
V
+ 175
REF
V
+ 150
REF
0.49*V
DD
REF
(AC150) ; V
IH.DQ
(AC150) ; V
IL.DQ
V
DD
V
- 100 V
REF
+ 100 V
REF
SS
- - - mV 1,2,7
V
- 175
REF
NOTE 2
V
- 150
REF
0.51*V
DD
(DC) by more than ± 1% VDD (for reference : approx. ± 15mV)
(AC175) value is used when V
IH.DQ
(AC175) value is used when V
IL.DQ
--mV1,2,8
V
+ 150
REF
NOTE 2
0.49*V
DD
+ 175mV is referenced, V
REF
- 175mV is referenced, V
REF
Unit NOTE
mV 1,5
mV 1,6
V
REF
DD
- 100
NOTE 2 mV 1,2,7
V
- 150
REF
0.51*V
DD
IL.DQ
mV 1,2,8
V3,4
(AC150) value is used
IH.DQ
(AC150) value is used when
- 10 -
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