ROHM UMA1N, FMA1A Technical data
UMA1N
Transistors
−
100mA / −50V Complex digital transistors
(with built-in resistors)
UMA1N / FMA1A
zApplica tions
Inverter, Interface, Driver
zFeatures
1) T wo DTA124E chips in a UMT or SMT package.
2) Mounting cost and area can be cut in half.
3) Emitter-common type.
zStructure
PNP epitaxial planar silicon transistor
(dual chips ; each with two built-in resistors)
zPackaging specifications
UMT5 SMT5
TR
3000
T148
3000
−
−
Part No.
UMA1N
FMA1A
Package
Packaging type Taping Taping
Code
Basic ordering
unit (pieces)
zAbsolute maximum ratings (Ta=25°C) zEquivalent circuits
<For Tr1 and T r2 in common>
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
∗
∗
2 200mW per element must not be exceeded.
Parameter Symbol
UMA1N
FMA1A
V
V
I
C(MAX)
Pd
Tstg
CC
IN
I
O
Tj
Limits
−50
−40 to +10
−30
−100
150(TOTAL)
300(TOTAL)
150
−55 to +150
Unit
V
V
mA
mA
∗1
mW
∗2
°C
°C
zExternal dimensions (Unit : mm)
2.0
1.3
0.65
0.65
(5)
(4)
(1)
(2)
(3)
0.2
Abbreviated symbol
2.9
1.9
0.95
0.95
(2)
(1)
(5)
(3)
(4)
0.3
Abbreviated symbol
(4)(5)
DTr2
R
2
R
1
(3)
(2)
DTr2
R
2
R
1
(3)
UMA1N
ROHM : UMT5
EIAJ : SC-88A
FMA1A
ROHM : SMT5
EIAJ : SC-74A
UMA1N
DTr1
R
R
1
(1)
FMA1A
(1)
DTr1
R
R
1
(5)
R1=22kΩ
R
2
(2)
2
(4)
2
=22kΩ
0.9
0.7
2.1
1.25
0.15
Each lead has same dimensions
: A1
1.1
0.8
1.6
2.8
0.15
Each lead has same dimensions
: A1
(1) IN
(2) GND
(3) IN
(4) OUT
(5) OUT
(1) OUT
(2) OUT
(3) IN
(4) GND
(5) IN
/
FMA1A
0.1Min.
0.3Min.
Rev.B 1/2
UMA1N
Transistors
zElectrical characteristics (Ta=25°C)
<For Tr1 and T r2 in common>
Parameter Symbol Min. Typ. Max. Unit
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Characteristics of built-in transistor.
∗
zElectrical characteristics curves
−100
−50
−20
(V)
I (on)
−10
−5
−2
−1
−500m
INPUT VOLTAGE : V
−200m
−100m
−100µ
−200µ−2m −20m−500µ−5m −50m
Fig.1 Input voltage vs. output current
−1
−500m
(V)
−200m
−100m
−50m
−20m
−10m
−5m
OUTPUT VOLTAGE : VO (on)
−2m
−1m
−100µ
Fig.4 Output voltage vs. output current
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
f
T
R
1
R2/R
1
VO=−0.3V
Ta=−40˚C
25˚C
100˚C
−1m −10m −100m
O
25˚C
−40˚C
(A)
lO/lI =20
(A)
OUTPUT CURRENT : I
(ON characteristics)
Ta=100˚C
−1m −10m −100m
−200µ−2m −20m−500µ−5m −50m
OUTPUT CURRENT : IO
−
−
−
−
−
56
∗
−
15.4
0.8
(A)
OUTPUT CURRENT : Io
−
3
−
0.1
−
−
−
−
250
22
1
−10m
VCC=−5V
−5m
−2m
Ta=100˚C
25˚C
−1m
−40˚C
−500µ
−200µ
−100µ
−50µ
−20µ
−10µ
−5µ
−2µ
−1µ
−0.5 −1.0 −1.5 −2.0 −2.5
0
INPUT VOLTAGE : V
Fig.2 Output current vs. input voltage
(OFF characteristics)
−
−
−
−
0.5
−
0.3
0.36
0.5
−
−
28.6
1.2
V
V
mA
µA
−
MHz
kΩ
−
I (off)
(V)
Conditions
V
CC
=
−
5V , I
O
=
−
V
I
O
V
V
V
V
O
=
=
−
I
=
−
CC
=
O
=
CE
=
−
0.2V , I
10mA , I
5V
−
50V , V
−
5V , I
−
10V , I
100µA
O
=
−
5mA
I
=
−
0.5mA
I
=
0V
O
=
−
5mA
E
=
5mA , f = 100MHz
−
−
1k
500
Ta=100˚C
I
200
100
DC CURRENT GAIN : G
−3.0
25˚C
−40˚C
50
20
10
5
2
1
−100µ−1m −10m −100m
−200µ−2m −20m−500µ−5m −50m
OUTPUT CURRENT : I
Fig.3 DC current gain vs. output current
/
FMA1A
V
O
=−5V
O
(A)
Rev.B 2/2
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