Page 1
Transistors
General purpose
(dual digital transistors)
EMB9 / UMB9N / IMB9A
EMB9 / UMB9N / IMB9A
!!!!
Features
1) Two DTA144Ys in a EMT or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
!!!!
Structure
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both DTr
DTr
.
2
and
1
!!!!Equivalent circuit
EMB9 / UMB9N IMB9A
(3) (2) (1)
R
1
R2
DTr2
1=10kΩ
R
2=47kΩ
R
!!!!
Absolute maximum ratings
DTr1
R2
R1
(4) (5) (6)
Parameter Symbol
Supply voltage
Input voltage
Output current
Power
dissipation
EMB9, UMB9N 150 (TOTAL)
IMB9A 300 (TOTAL)
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
∗
(4) (5) (6)
R1
R2
DTr2
DTr1
R2
R1
(3) (2) (1)
1=10kΩ
R
R2=47kΩ
(Ta = 25°C)
Limits
V
CC
IN
V
O
I
C (Max.)
I
Pd
Tj 150 ˚C
Tstg −55∼+150 ˚C
−50 V
−40
6
−70
−100
Unit
V
mA
mW
!!!!
External dimensions
(Units : mm)
EMB9
(3)
(4)
0.5
1.0
1.6
(2)(5)
0.22
0.13
0.5
(1)
(6)
1.2
1.6
0.5
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : B9
UMB9N
ROHM : UMT6
EIAJ : SC-88
0.2
0.15
0.1Min.
)
)
3
4
(
(
)
5
(
)
6
(
0.65
)
2
(
)
1
(
0.65
1.25
2.1
0.7
0to0.1
Each lead has same dimensions
1.3
2.0
0.9
Abbreviated symbol : B9
IMB9A
)
)
6
1
(
(
0.3
)
5
(
)
4
(
0.15
0.3to0.6
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : B9
1
∗
2
∗
0.95
2.9
)
1.9
2
(
0.95
)
3
(
1.6
2.8
1.1
0.8
0to0.1
Each lead has same dimensions
Page 2
Transistors
!!!!Electrical characteristics (Ta = 25°C)
Parameter Symbol
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Transition frequency of the device
∗
R2 / R
!!!!Packaging specifications
Package
Code TR T148
Type
EMB9
UMB9N
IMB9A
Basic ordering
unit (pieces)
V
V
V
I
O (off)
I (off)
I (on)
O (on)
I
I
G
I
T
R
1
Min.
−
−1.4
−
−
−
68
−f
7
1
3.7
T2R
8000
EMB9 / UMB9N / IMB9A
Typ. Max. Unit Conditions
V
CC
=
−5V, I
O
=
−
−0.3
−
−0.1
−0.3
−
−
−0.5
−
−
250 − V
10
4.7
V
−
V
mA
0.88
µA
−
−
MHz
13
kΩ
5.7
−−
Taping
3000 3000
O
=
V
O/II
=
I
I
=
−5V
V
CC
V
O
=
V
CE
=
−100µA
−0.3V, I
O
=
−1mA
−5mA/−0.25mA
=
−50V, V
I
=
0V
−5V, I
O
=
−5mA
−10mA, I
E
=
5mA, f=100MHz
−
∗
!!!!Electrical characteristic curves
−100
−50
−20
(V)
−10
I (on)
−5
Ta=−40˚C
25˚C
−2
−1
−500m
INPUT VOLTAGE : V
−200m
−100m
−100µ
100˚C
−1m −10m −100m
−200µ−2m −20m−500µ−5m −50m
OUTPUT CURRENT : I
Fig.1 Input voltage vs. output current
(ON characteristics)
−
1000m
−
500m
−
200m
−
100m
O (on) (V)
−
50m
−
20m
−
10m
−
5m
−
2m
OUTPUT VOLTAGE : V
−
1m
−100µ
−200µ−2m −20m−500µ−5m −50m
Ta=100˚C
−1m −10m −100m
OUTPUT CURRENT : I
Fig.4 Output voltage vs. output
current
25˚C
−40˚C
O
(A)
O (A)
VO=−0.3V
lO/lI =20
−10m
−5m
−2m
−1m
(A)
−500µ
−200µ
−100µ
−50µ
−20µ
−10µ
−5µ
OUTPUT CURRENT : Io
−2µ
−1µ
0 −3
Ta=100˚C
25˚C
−40˚C
−0.5 −1 −1.5 −2 −2.5
INPUT VOLTAGE : V
I (off)
(V)
VCC=−5V
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
500
I
200
100
50
20
10
DC CURRENT GAIN : G
−100µ−1m −10m −100m
Ta=100˚C
25˚C
−40˚C
5
2
1
−200µ−2m −20m−500µ−5m −50m
OUTPUT CURRENT : I
O
VO=−5V
(A)
Fig.3 DC current gain vs. output
current
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