Datasheet UMA1019M Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

UMA1019M

Low-voltage frequency synthesizer
for radio telephones

Product specification
Supersedes data of November 1994
File under Integrated Circuits, IC03

1995 Jul 07

Philips Semiconductors Product specification

Low-voltage frequency synthesizer
for radio telephones

FEATURES

• Low current from 3 V supply

• Fully programmable RF divider

• 3-line serial interface bus

• Independent fully programmable reference divider,

driven from external crystal oscillator

• Dual phase detector outputs to allow fast frequency
switching

• Dual power-down modes.

APPLICATIONS

• 2 GHz mobile telephones

• Portable battery-powered radio equipment.

GENERAL DESCRIPTION

The UMA1019M BICMOS device integrates prescalers, a
programmable divider, and phase comparator to
implement a phase-locked loop.

UMA1019M

The device is designed to operate from 3 NiCd cells, in
pocket phones, with low current and nominal 5 V supplies.

The synthesizer operates at RF input frequencies up to

2.4 GHz. The synthesizer has a fully programmable
reference divider. All divider ratios are supplied via a
3-wire serial programming bus.

Separate power and ground pins are provided to the
analog and digital circuits. The ground leads should be
externally short-circuited to prevent large currents flowing
across the die and thus causing damage. Digital supplies

, V

V

DD1

DD2

and V
VCC must be equal to or greater than VDD (i.e. VDD=3V
and VCC= 5 V for wider tuning range).

The phase detector uses two charge pumps, one provides
normal loop feedback, while the other is only active during
fast mode to speed-up switching. All charge pump currents
(gain) are fixed by an external resistance at pin I
(pin 14). Only passive loop filters are used; the
charge-pumps function within a wide voltage compliance
range to improve the overall system performance.

must also be at the same potential.

DD3

SET

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCC, V
I

CC+IDD

I

, I

CCPD

f

VCO

f

XTAL

f

PC

T

amb

DD

DDPD

supply voltage VCC≥ V

DD

2.7 − 5.5 V
supply current − 9.4 − mA
current in power-down mode per supply − 12 −µA
RF input frequency 1700 1900 2400 MHz
crystal reference input frequency 3 − 40 MHz
phase comparator frequency − 200 − kHz
operating ambient temperature −30 − +85 °C

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

UMA1019M SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1

1995 Jul 07 2

Philips Semiconductors Product specification

Low-voltage frequency synthesizer
for radio telephones

BLOCK DIAGRAM

UMA1019M

Fig.1 Block diagram.

1995 Jul 07 3

Philips Semiconductors Product specification

Low-voltage frequency synthesizer
for radio telephones

PINNING

SYMBOL PIN DESCRIPTION

FAST 1 control input to speed-up main

synthesizer
CPF 2 speed-up charge-pump output
CP 3 normal charge-pump output
V

DD1

V

DD2

RFI 6 2 GHz RF main divider input
DGND1 7 digital ground 1
f

XTAL

POFF 9 power-down input
n.c. 10 not connected
CLK 11 programming bus clock input
DATA 12 programming bus data input
E 13 programming bus enable input

I

SET

n.c. 15 not connected
AGND 16 analog ground
n.c. 17 not connected
V

CC

V

DD3

LOCK 20 in-lock detect output; test mode

4 digital power supply 1
5 digital power supply 2

8 crystal frequency input from TCXO

(active LOW)

14 regulator pin to set the charge-pump

currents

18 supply for charge-pump
19 digital power supply 3

output

UMA1019M

Fig.2 Pin configuration.

1995 Jul 07 4

Philips Semiconductors Product specification

Low-voltage frequency synthesizer
for radio telephones

FUNCTIONAL DESCRIPTION
General

Programmable reference and main dividers drive the
phase detector. Two charge pumps produce phase error
current pulses for integration in an external loop filter.
A hardwired power-down input POFF (pin 9) ensures that
the dividers and phase comparator circuits can be
disabled.

The RFI input (pin 6) drives a pre-amplifier to provide the
clock to the first divider stage. The pre-amplifier has a high
input impedance, dominated by pin and pad capacitance.
The circuit operates with signal levels from 60 mV up to
180 mV (RMS), and at frequencies as high as 2.4 GHz.
The high frequency divider circuits use bipolar transistors,
slower bits are CMOS. Divide ratios (512 to 131071) allow
a 2 MHz phase comparison frequency.

The reference and main divider outputs are connected to
a phase/frequency detector that controls two charge
pumps. The two pumps have a common bias-setting
current that is set by an external resistance. The ratio
between currents in fast and normal operating modes can
be programmed via the 3-wire serial bus. The low current
pump remains active except in power-down. The high
current pump is enabled via the control input FAST (pin 1).
By appropriate connection to the loop filter, dual bandwidth
loops are provided: short time constant during frequency
switching (FAST mode) to speed-up channel changes and
low bandwidth in the settled state (on-frequency) to reduce
noise and breakthrough levels.

The synthesizer speed-up charge pump (CPF) is
controlled by the FAST input in synchronization with phase
detector operation in such a way that potential
disturbances are minimized. The dead zone (caused by
finite time taken to switch the current sources on or off) is
cancelled by feedback from the normal pump output to the
phase detector thereby improving linearity.

An open drain transistor drives the output pin LOCK
(pin 20). It is recommended that the pull-up resistor from
this pin to V
the sink current in the LOW state to below 400 µA. The
output will be a current pulse with the duration of the
selected phase error. By appropriate external filtering and
threshold comparison an out-of-lock or an in-lock flag is
generated. The out-of-lock function can be disabled via the
serial programming bus.

is chosen to be of sufficient value to keep

DD

UMA1019M

Serial programming bus

A simple 3-line unidirectional serial bus is used to program
the circuit. The 3 lines are DATA, CLK and
data sent to the device is loaded in bursts framed by E.
Programming clock edges and their appropriate data bits
are ignored until E goes active LOW. The programmed
information is loaded into the addressed latch when E
returns inactive HIGH. Only the last 21 bits serially clocked
into the device are retained within the programming
register. Additional leading bits are ignored, and no check
is made on the number of clock pulses. The fully static
CMOS design uses virtually no current when the bus is
inactive. It can always capture new programmed data
even during power-down.

However when the synthesizer is powered-on, the
presence of a TCXO signal is required at pin 8 (f
correct programming.

Data format

Data is entered with the most significant bit first. The
leading bits make up the data field, while the trailing four
bits are an address field. The UMA1019M uses 4 of the 16
available addresses. The data format is shown in Table 1.
The first entered bit is p1, the last bit is p21.

The trailing address bits are decoded on the inactive edge
of

E. This produces an internal load pulse to store the data
in one of the addressed latches. To ensure that data is
correctly loaded on first power-up, E should be held LOW
and only taken HIGH after having programmed an
appropriate register. To avoid erroneous divider ratios, the
pulse is not allowed during data reads by the frequency
dividers. This condition is guaranteed by respecting a
minimum E pulse width after data transfer.
The corresponding relationship between data fields and
addresses is given in Table 2.

Power-down mode

The power-down signal can be either hardware (POFF) or
software (sPOFF). The dividers are on when both POFF
and sPOFF are at logic 0.

When the synthesizer is reactivated after power-down the
main and reference dividers are synchronized to avoid
possibility of random phase errors on power-up.

E (enable). The

) for

XTAL

1995 Jul 07 5

1995 Jul 07 6

Table 1 Format of programmed data

LAST IN PROGRAMMING REGISTER BIT USAGE FIRST IN

p21 p20 p19 p18 p17 p16 ../.. p2 p1

ADD0 ADD1 ADD2 ADD3 DATA0 DATA1 ../.. DATA15 DATA16

LATCH ADDRESS LSB DATA COEFFICIENT MSB

Table 2 Bit allocation (note 1)

FT REGISTER BIT ALLOCATION LT

p1 p2 p3 p4 p5 p6 p7 p8 p9 p10 p11 p12 p13 p14 p15 p16 p17 p18 p19 p20 p21
dt16 dt15 dt14 dt13 dt12 DATA FIELD dt4 dt3 dt2 dt1 dt0 ADDRESS

TEST BITS

(2)

0000
X X X X OOL X CR1 CR0 X X sPOFF X X X X X X 0 0 0 1
PM16 MAIN DIVIDER COEFFICIENT PM0 0 1 0 0
X X X X X X PR10 REFERENCE DIVIDER COEFFICIENT PR0 0 1 0 1

Notes

1. FT = first; LT = last; sPOFF = software power-down for synthesizer (1 = OFF); OOL = out-of-lock (1 = enabled).

2. The test register should not be programmed with any other value except all zeros for normal operation.

Table 3 Fast and normal charge pumps current ratio (note 1)

Philips Semiconductors Product specification

Low-voltage frequency synthesizer

for radio telephones

Note

1. I

CR1 CR0 I

00 4×I
01 4×I
10 2×I
11 2×I

V

14

= ; bias current for charge pumps.

---------- -

SET

R

ext

CP

SET
SET
SET
SET

I

CPF

16 × I
32 × I
24 × I
32 × I

SET
SET
SET
SET

I

CPF:ICP

4:1

8:1
12 : 1
16 : 1

UMA1019M

Philips Semiconductors Product specification

Low-voltage frequency synthesizer

UMA1019M

for radio telephones

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

DD

V

CC

∆V

CC−VDD

V

n

V

2, 3

∆V

GND

P

tot

T

stg

T

amb

T

j

HANDLING

digital supply voltage −0.3 +5.5 V
analog supply voltage −0.3 +5.5 V
difference in voltage between VCC and V

DD

−0.3 +5.5 V
voltage at pins 1, 6, 8, 9, 11 to 14 and 20 −0.3 VDD+ 0.3 V
voltage at pins 2 and 3 −0.3 VCC+ 0.3 V
difference in voltage between AGND and DGND (these

−0.3 +0.3 V
pins should be connected together)

total power dissipation − 150 mW
storage temperature −55 +125 °C
operating ambient temperature −30 +85 °C
maximum junction temperature − 95 °C

Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air 120 K/W

1995 Jul 07 7

Philips Semiconductors Product specification

Low-voltage frequency synthesizer

UMA1019M

for radio telephones

CHARACTERISTICS

V

DD1=VDD2=VDD3

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply; pins 4, 5 and 18

V

DD

V

CC

I

DD

I

CC

I

, I

CCPD

DDPD

RF main divider input; pin 6

f

VCO

V

6(rms)

Z

I

C

I

R

m

f

PCmax

f

PCmin

= 2.7 to 5.5 V; VCC= 2.7 to 5.5 V; T

digital supply voltage V
analog supply voltage VCC≥ V

=25°C; unless otherwise specified.

amb

DD1=VDD2=VDD3

DD

2.7 − 5.5 V

2.7 − 5.5 V
synthesizer digital supply current VDD= 5.5 V − 9 12.5 mA
charge pumps analog supply

current
current in power-down mode per

VCC= 5.5 V;
R

=12 kΩ

ext

logic levels 0 or V

DD

− 0.4 1.0 mA

− 12 50 µA

supply

RF input frequency 1700 1900 2400 MHz
AC-coupled input signal level

(RMS value)

input impedance (real part) f

Rs=50Ω;

1.7 GHz < f
=50Ω;

R

s

2 GHz < f

= 2 GHz − 300 −Ω

VCO

VCO

VCO

< 2 GHz

< 2.4 GHz

60 − 400 mV

60 − 180 mV

typical pin input capacitance indicative, not tested − 2 − pF
main divider ratio 512 − 131071
maximum phase comparator

− 2000 − kHz

frequency
minimum phase comparator

− 10 − kHz

frequency

Crystal reference divider input; pin 8

f

XTAL

V

8(rms)

Z

I

C
R

I
r

crystal reference input frequency 5 − 40 MHz
sinusoidal input signal level

(RMS value)
input impedance (real part) f

V

6(rms)

V

6(rms)

= 30 MHz − 2 − kΩ

XTAL

typical pin input capacitance indicative, not tested − 2 − pF
reference divider ratio 8 − 2047

Charge pump current setting resistor input; pin 14

R

ext

external resistor from pin 14 to
ground

V

14

Charge pump outputs; pins 3 and 2; R

I

Ocp

I

match

I

Lcp

V

cp

regulated voltage at pin 14 R

=12kΩ

ext

=12kΩ−1.15 − V

ext

charge pump output current error −25 − +25 %
sink-to-source current matching Vcp in range −±5− %
charge pump off leakage current Vcp=1⁄2V
charge pump voltage compliance 0.4 − VCC− 0.4 V

1995 Jul 07 8

< 224 mV 50 − 500 mV
> 224 mV 100 − 500 mV

12 − 60 kΩ

CC

−5 ±1+5 nA

Philips Semiconductors Product specification

Low-voltage frequency synthesizer

UMA1019M

for radio telephones

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Interface logic input signal levels; pins 13, 12, 11 and 1

V
V
I
C

IH
IL

bias

I

HIGH level input voltage 0.7V
LOW level input voltage −0.3 − 0.3V
input bias current logic 1 or logic 0 −5 − +5 µA
input capacitance indicative, not tested − 2 − pF

Lock detect output signal; pin 20 (open-drain output)

V

OL

LOW level output voltage I

sink

= 0.4 mA −−0.4 V

− VDD+ 0.3 V

DD

DD

V

1995 Jul 07 9

Philips Semiconductors Product specification

Low-voltage frequency synthesizer

UMA1019M

for radio telephones

SERIAL BUS TIMING CHARACTERISTICS

V

DD=VCC

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

Serial programming clock; CLK

t

r

t

f

T

cy

Enable programming;

t

START

t

END

t

W

t

SU;E

Register serial input data; DATA

t

SU;DAT

t

HD;DAT

=3V; T

=25°C unless otherwise specified.

amb

input rise time − 10 40 ns
input fall time − 10 40 ns
clock period 100 −−ns

E

delay to rising clock edge 40 −−ns
delay from last falling clock edge −20 −−ns
minimum inactive pulse width 4000

(1)

−−ns

enable set-up time to next clock edge 20 −−ns

input data to clock set-up time 20 −−ns
input data to clock hold time 20 −−ns

Note

1. The minimum pulse width (t
a) Main divider input frequency

b) Reference divider input frequency

) can be smaller than 4 µs provided all the following conditions are satisfied:

W

512

>

f

--------- -

VCO

t

W

f

XTAL

3

>

----- ­t

W

Fig.3 Serial bus timing diagram.

1995 Jul 07 10

Philips Semiconductors Product specification

Low-voltage frequency synthesizer
for radio telephones

APPLICATION INFORMATION

UMA1019M

Fig.4 Typical application block diagram.

1995 Jul 07 11

Philips Semiconductors Product specification

B
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B
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B
B
B
B
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B
B
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BBBBBBBBB

B
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BBBBBBBBB

Low-voltage frequency synthesizer
for radio telephones

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UMA1019M

Fig.5 Typical test and application diagram.

1995 Jul 07 12

Philips Semiconductors Product specification

Low-voltage frequency synthesizer
for radio telephones

PACKAGE OUTLINE

SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm

20

D

c

y

Z

11

E

H

UMA1019M

SOT266-1

A

X

v M

E

A

pin 1 index

110

w M

b

e

DIMENSIONS (mm are the original dimensions)

UNIT A1A2A

mm

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

A

max.

1.5

0.1501.4

1.2

0.25

b

3

p

0.32

0.20

p

cD

0.20

6.6

0.13

6.4

0 2.5 5 mm

scale

(1)E(1)

eHELLpQZywv θ

4.5

0.65 1.0 0.2

4.3

6.6

6.2

Q

A

2

A

1

detail X

0.75

0.65

0.45

0.45

(A )

L

p

L

A

3

θ

0.13 0.1

0.48

0.18

(1)

o

10

o

0

OUTLINE
VERSION

SOT266-1

IEC JEDEC EIAJ

REFERENCES

1995 Jul 07 13

EUROPEAN

PROJECTION

ISSUE DATE

90-04-05
95-02-25

Philips Semiconductors Product specification

Low-voltage frequency synthesizer
for radio telephones

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

Reflow soldering

Reflow soldering techniques are suitable for all SO and
SSOP packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

(order code 9398 652 90011).

UMA1019M

SSOP
Wave soldering is not recommended for SSOP packages.

This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The longitudinal axis of the package footprint must

be parallel to the solder flow and must incorporate
solder thieves at the downstream end.

Even with these conditions, only consider wave
soldering SSOP packages that have a body width of

4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).

METHOD (SO AND SSOP)
During placement and before soldering, the package must

be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal

of corrosive residues in most applications.
SO
Wave soldering techniques can be used for all SO

packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be

parallel to the solder flow.

• The package footprint must incorporate solder thieves at

the downstream end.

1995 Jul 07 14

Repairing soldered joints

Fix the component by first soldering two diagonally-

opposite end leads. Use only a low voltage soldering iron

(less than 24 V) applied to the flat part of the lead. Contact

time must be limited to 10 seconds at up to 300 °C. When

using a dedicated tool, all other leads can be soldered in

one operation within 2 to 5 seconds between

270 and 320 °C.

Philips Semiconductors Product specification

Low-voltage frequency synthesizer

UMA1019M

for radio telephones

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1995 Jul 07 15

Philips Semiconductors – a worldwide company

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th

floor, Suite 51,

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Tel. [phone], Fax. [phone]
(From 10-10-1995: Tel. [phone], Fax. [phone])

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Tel. [phone], Fax. [phone]

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Pakistan: Philips Electrical Industries of Pakistan Ltd.,

Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton,
KARACHI 75600, Tel. [phone],
Fax. [phone]

Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Portugal: PHILIPS PORTUGUESA, S.A.,

Rua dr. António Loureiro Borges 5, Arquiparque - Miraflores,
Apartado 300, 2795 LINDA-A-VELHA,
Tel. [phone], Fax. [phone]

Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. [phone], Fax. [phone]

South Africa: S.A. PHILIPS Pty Ltd.,

195-215 Main Road Martindale, 2092 JOHANNESBURG,
P.O. Box 7430, Johannesburg 2000,
Tel. [phone], Fax. [phone].

Spain: Balmes 22, 08007 BARCELONA,

Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM,

Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. [phone], Fax. [phone]

Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West

Road, Sec. 1. Taipeh, Taiwan ROC, P.O. Box 22978,
TAIPEI 100, Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong,
Bangkok 10260, THAILAND,
Tel. [phone], Fax. [phone]

Turkey:Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors LTD.,

276 Bath Road, Hayes, MIDDLESEX UB3 5BX,
Tel. [phone], Fax. [phone]

United States:811 East Arques Avenue, SUNNYVALE,

CA 94088-3409, Tel. [phone], Fax. [phone]

Uruguay: Coronel Mora 433, MONTEVIDEO,

Tel. [phone], Fax. [phone]

Internet: http://www.semiconductors.philips.com/ps/
For all other countries apply to: Philips Semiconductors,

International Marketing and Sales, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands,
Telex 35000 phtcnl, Fax. [phone] (from 10-10-1995: [phone])

SCD41 © Philips Electronics N.V. 1995

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413061/1500/02/pp16 Date of release: 1995 Jul 07
Document order number: 9397 750 00197