Richtek RT8207PGQW, RT8561DGQW Schematic [ru]

5 (1)

®

RT8207P

Complete DDRII/DDRIII/Low-Power DDRIII/DDRIV Memory

Power Supply Controller

General Description

The RT8207P provides a complete power supply for both DDRII/DDRIII/Low-PowerDDRIII/DDRIV memory systems. It integrates a synchronous PWM buck controller with a 1.5A sink/source tracking linear regulator and buffered low noise reference.

The PWM controller provides the high efficiency, excellent transient response, and high DC output accuracy needed for stepping down high voltage batteries to generate low voltage chipset RAM supplies in notebook computers. The constant-on-time PWM control scheme handles wide input/output voltage ratios with ease and provides 100ns “instant-on” response to load transients while maintaining a relatively constant switching frequency.

The RT8207P achieves high efficiency at a reduced cost by eliminating the current sense resistor found in traditional current mode PWMs. Efficiency is further enhanced by its ability to drive very large synchronous rectifier MOSFETs. The buck conversion allows this device to directly step down high voltage batteries for the highest possible efficiency.

The 1.5A sink/source LDO maintains fast transient response, only requiring 20μF of ceramic output capacitance. In addition, the LDO supply input is available externally to significantly reduce the total power losses. The RT8207P supports all of the sleep state controls placing VTT at high-Z in S3 and discharging VDDQ, VTT and VTTREF (soft-off) in S4/S5.

The RT8207P has all of the protection features including thermal shutdown and is available in a WQFN-20L 3x3 packages.

Applications

zDDRI/II/III/Low-Power DDRIII/DDRIV Memory Power Supplies

zNotebook Computers

zSSTL18, SSTL15 and HSTL Bus Termination

Features

zPWM Controller

`Resistor Programmable Current Limit by Low Side RDS(ON) Sense

`Quick Load Step Response Within 100ns

`1% VVDDQ Accuracy Over Line and Load

`Fixed 1.8V (DDRII), 1.5V (DDRIII) or Adjustable 0.75V to 3.3V Output Range for 1.35V (Low-Power DDRIII) and 1.2V (DDRIV)

`4.5V to 26V Battery Input Range

`Resistor Programmable Frequency

`Over/Under Voltage Protection

`Internal Current Limit Ramp Soft-Start

`Drives Large Synchronous-Rectifier FETs

`Power Good Indicator

z1.5A LDO (VTT), Buffered Reference (VTTREF)

`Capable to Sink and Source 1.5A

`External Input Available to Minimize Power Losses

`Integrated Divider Tracks 1/2 VDDQ for Both VTT and VTTREF

`Buffered Low Noise 10mA VTTREF Output

`Remote Sensing (VTTSNS)

`±20mV Accuracy for Both VTTREF and VTT

`Supports High-Z in S3 and Soft-Off in S4/S5

zRoHS Compliant and Halogen Free

Ordering Information

RT8207P

Package Type

QW : WQFN-20L 3x3 (W-Type)

Lead Plating System

G : Green (Halogen Free and Pb Free)

Note :

Richtek products are :

`RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020.

`Suitable for use in SnPb or Pb-free soldering processes.

Copyright ©2013Richtek Technology Corporation. All rights reserved.

is a registered trademark of Richtek Technology Corporation.

DS8207P-01 October 2013

www.richtek.com

 

1

RT8207P

Marking Information

Pin Configurations

 

4B= : Product Code

4B=YM

YMDNN : Date Code

DNN

 

 

 

 

(TOP VIEW)

 

 

VTT VLDOIN BOOT UGATE PHASE

 

 

20 19

18 17 16

 

VTTGND

1

 

 

 

15

LGATE

VTTSNS

2

GND

14

PGND

GND

3

13

CS

VTTREF

4

 

 

21

12

VDDP

VDDQ

5

 

 

 

11

VDD

 

6

7

8

9

10

 

 

FB S3

S5

TON

PGOOD

 

 

WQFN-20L 3x3

 

Copyright ©2013 Richtek Technology Corporation. All rights reserved.

is a registered trademark of Richtek Technology Corporation.

www.richtek.com

DS8207P-01 October 2013

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RT8207P

Typical Application Circuit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

IN

26V

 

 

 

 

 

 

 

 

 

 

R

 

4.5V to

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TON

 

 

 

 

 

 

 

 

 

 

 

 

620k

 

 

 

 

 

 

 

 

 

RT8207P

 

R5

 

C9

 

 

 

 

 

 

 

 

 

10µF x 3

 

 

 

 

 

9

18

0

C4

 

 

 

 

 

TON

BOOT

 

 

 

V

 

 

 

 

 

 

 

 

V

 

 

12

 

 

 

 

 

0.1µF

 

 

 

VDDQ

 

 

 

 

 

 

 

 

 

 

1.2V

VDDP

 

 

 

VDDP

 

17

R6

0

 

Q1

 

 

5V

 

 

 

UGATE

 

 

 

 

 

R1

 

 

 

BSC09

L1

 

 

C1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4N03S

1µH

 

 

 

5.1

 

 

 

16

 

 

 

 

 

 

1µF

11

 

PHASE

 

 

 

 

 

 

VDD

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C2

 

 

 

 

 

 

 

 

 

 

 

 

15

 

 

 

 

 

 

C7

 

 

R3

 

LGATE

 

 

 

 

R7*

 

 

 

1µF

 

 

 

 

Q2

 

 

220µF

 

 

 

 

 

 

 

 

 

 

 

R2

 

5.6k

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BSC032N03S

 

C5*

R8

C6*

 

100k

 

13

CS

 

 

 

 

 

 

 

 

 

 

 

 

6k

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

6

 

 

 

 

 

 

PGOOD

 

 

PGOOD

FB

 

 

 

 

 

 

 

 

 

 

 

 

 

* : Optional

 

 

VTT/VTTREF Control

 

7

S3

 

 

 

 

R9

C9

 

 

 

 

 

 

 

 

 

8

 

19

 

 

 

 

 

10k

0.1µF

 

 

 

 

VLDOIN

 

 

 

 

 

 

VDDQ Control

 

S5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5

 

 

 

 

 

 

 

 

 

 

 

 

VDDQ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

V

 

 

 

 

3 , 21 (Exposed Pad)

 

VTT

 

 

 

 

TT

 

 

 

 

GND

2

 

 

C8

0.6V

 

 

 

 

 

 

14

 

 

 

 

 

 

 

 

 

PGND

VTTSNS

 

 

10µF x 2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

4

 

 

 

 

 

 

 

 

 

 

VTTGND

VTTREF

 

 

C3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

33nF

 

 

 

 

Figure 1. Adjustable Voltage Regulator

 

 

 

9

V

 

 

12

VDDP

 

 

 

5V

C1

R1

 

 

 

 

5.1

 

 

1µF

11

 

 

 

 

 

 

 

C2

R3

 

R2

1µF

 

 

5.6k

 

100k

 

13

 

 

 

PGOOD

 

 

10

 

 

 

VTT/VTTREF Control

 

7

 

8

 

VDDQ Control

 

 

 

 

 

3 , 21 (Exposed Pad)

 

 

 

14

 

 

 

1

 

 

 

 

V

 

 

 

 

 

 

 

 

IN

 

26V

 

 

 

 

 

R

4.5V to

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TON

 

 

 

 

 

 

 

620k

 

 

 

 

RT8207P

 

R5

 

C8

 

 

 

 

10µF x 2

 

18

0

C4

 

 

TON

BOOT

 

V

 

 

 

 

 

 

 

 

 

 

 

0.1µF

 

 

 

VDDQ

VDDP

 

 

 

Q1

 

1.8V/1.5V

 

17

R6

0

 

UGATE

 

 

 

BSC09

L1

 

 

 

 

 

 

 

 

 

 

 

PHASE

16

 

 

4N03S

1µH

 

VDD

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

15

 

 

 

 

 

C6

 

LGATE

 

 

 

R7*

 

 

 

Q2

 

220µF

 

 

 

 

 

 

 

 

 

 

 

BSC032N03S

 

C5*

 

CS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PGOOD

VDDQ

5

 

 

 

 

 

 

 

19

 

 

 

* :

Optional

S3

VLDOIN

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

S5

 

20

 

 

 

V

 

 

VTT

 

 

 

 

TT

 

 

2

 

C7

 

0.9V/0.75V

 

 

 

VTTSNS

 

 

 

 

 

 

10µF x 2

 

 

 

 

 

4

 

 

 

 

 

 

VTTREF

 

C3

 

 

 

 

GND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

33nF

 

 

 

 

PGND

 

 

 

 

 

 

 

FB

6

 

V

 

for DDRII

 

 

 

 

 

 

 

VTTGND

 

 

VDDP

 

 

 

 

 

 

GND for DDRIII

 

 

 

 

 

 

 

 

Figure 2. Fixed Voltage Regulator for

Copyright ©2013 Richtek Technology Corporation. All rights reserved.

is a registered trademark of Richtek Technology Corporation.

DS8207P-01 October 2013

www.richtek.com

 

3

RT8207P

Functional Pin Description

Pin No.

Pin Name

Pin Function

1

VTTGND

Power Ground Output for VTT LDO.

 

 

 

2

VTTSNS

Voltage Sense Input for VTT LDO. Connect to the terminal of the VTT LDO

output capacitor.

 

 

3,

GND

Analog Ground. The exposed pad must be soldered to a large PCB and

21 (Exposed Pad)

connected to GND for maximum thermal dissipation.

4

VTTREF

Buffered Reference Output.

 

 

 

 

 

Reference Input for VTT and VTTREF. Discharge current sinking terminal for

5

VDDQ

VDDQ non-tracking discharge. Output voltage feedback input for VDDQ output

 

 

if the FB pin is connected to VDD or GND.

 

 

VDDQ Output Setting. Connect to GND for DDR3 (VVDDQ = 1.5V) power

6

FB

supply. Connect to VDD for DDR2 (VVDDQ = 1.8V) power supply. Or connect to

a resistive voltage divider from VDDQ to GND to adjust the output of PWM from

 

 

 

 

0.75V to 3.3V.

7

S3

S3 Signal Input.

 

 

 

8

S5

S5 Signal Input

 

 

 

9

TON

Set the UGATE on time through a pull-up resistor connecting to VIN.

10

PGOOD

Power Good Open Drain Output. In High state when VDDQ output voltage is

within the target range.

 

 

11

VDD

Supply Input for Analog Supply.

 

 

 

12

VDDP

Supply Input for LGATE Gate Driver.

 

 

 

13

CS

Current Limit Threshold Setting Input. Connect to VDD through the voltage

setting resistor.

 

 

14

PGND

Power Ground for Low Side MOSFET.

 

 

 

15

LGATE

Low Side Gate Driver Output for VDDQ.

 

 

 

16

PHASE

Switch Node. External inductor connection for VDDQ and behave as the current

sense comparator input for Low Side MOSFET RDS(ON) sensing.

 

 

17

UGATE

High Side Gate Driver Output for VDDQ.

18

BOOT

Boost Flying Capacitor Connection for VDDQ.

19

VLDOIN

Power Supply for VTT LDO.

 

 

 

20

VTT

Power Output for VTT LDO.

Copyright ©2013 Richtek Technology Corporation. All rights reserved.

is a registered trademark of Richtek Technology Corporation.

www.richtek.com

DS8207P-01 October 2013

4

 

Richtek RT8207PGQW, RT8561DGQW Schematic

RT8207P

Function Block Diagram

Buck Controller

 

TRIG

 

 

 

 

 

 

 

 

 

VDDQ

On-time

 

 

 

 

 

 

 

BOOT

Compute

 

 

 

 

 

 

 

TON

1-SHOT

 

 

 

 

 

 

 

 

 

 

 

 

R

 

 

 

 

 

 

 

 

Comp

 

 

 

 

 

 

 

 

-

 

 

 

PWM

 

 

0.75V VREF

 

+

 

 

S

Q

DRV

UGATE

 

 

 

 

 

 

 

 

 

 

Min. TOFF

 

 

 

PHASE

 

 

 

Latch

 

 

 

 

 

 

+

OV

Q

TRIG

 

 

 

VDDP

116%VREF

S1

Q

 

 

 

-

 

 

1-SHOT

 

 

 

 

 

 

 

 

 

 

 

FB

+

UV

Latch

 

 

 

 

DRV

LGATE

S1

Q

 

 

 

 

70% VREF

-

 

 

 

 

 

 

PGND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Diode

 

 

 

 

 

 

 

-

 

 

 

 

 

 

 

 

 

 

Emulation

 

 

 

 

90% VREF

+

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Thermal

 

 

 

+

+

CS

VDD

SS Timer

 

 

 

 

GM

 

 

Shutdown

 

 

 

+

-

10µA

 

 

 

 

 

 

-

 

S5

 

 

 

 

 

 

 

SS Int.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PGOOD

 

 

 

 

VTT LDO

 

 

VDDQ

 

 

S5

 

 

 

 

S3

Tracking

Thermal

VTTREF

Discharge

 

 

Shutdown

VLDOIN

 

 

 

+

+

 

 

 

-

 

 

 

-

 

 

 

 

+

VTT

 

 

 

-

+

 

 

 

 

-

VTTSNS

 

 

-

 

GND

 

110% VVTTREF

+

 

 

90% VVTTREF

-

VTTGND

 

 

 

 

 

+

 

Copyright ©2013 Richtek Technology Corporation. All rights reserved.

is a registered trademark of Richtek Technology Corporation.

DS8207P-01 October 2013

www.richtek.com

5

RT8207P

Absolute Maximum Ratings

(Note 1)

 

 

 

 

 

 

 

z Supply Input Voltage, TON to GND -------------------------------------------------------------------------------------

 

 

 

 

 

−0.3V to 32V

z BOOT to PHASE -----------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

 

 

−0.3V to 6V

z VDD, VDDP, CS, S3, S5, VTTSNS, VDDQ, VTTREF, VTT, VLDOIN,

 

 

 

 

 

 

FB, PGOOD to GND

-------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

 

−0.3V to 6V

z PGND, VTTGND to GND --------------------------------------------------------------------------------------------------

 

 

 

 

 

−0.3V to 0.3V

z PHASE to GND

 

 

 

 

 

 

 

 

 

 

 

DC ------------------------------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

 

 

−1V to 32V

< 20ns ------------------------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

 

 

−8V to 38V

z LGATE to GND

 

 

 

 

 

 

 

 

 

 

 

DC ------------------------------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

 

 

−0.3V to 6V

< 20ns ------------------------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

 

 

−2.5V to 7.5V

z UGATE to PHASE

 

 

 

 

 

 

 

 

 

 

 

DC ------------------------------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

 

 

−0.3V to 6V

< 20ns ------------------------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

 

 

−5V to 7.5V

z The Other Pins --------------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

 

 

−0.3V to 6.5V

z Power Dissipation, PD @ TA = 25°C

 

 

 

 

 

 

 

 

WQFN-20L 3x3 -------------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

 

 

1.471W

 

z Package Thermal Resistance (Note 2)

 

 

 

 

 

 

 

 

WQFN-20L 3x3, θJA --------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

 

 

68°C/W

 

WQFN-20L 3x3, θJC

-------------------------------------------------------------------------------------------------------

 

 

 

 

 

 

 

7.5°C/W

 

z Junction Temperature ------------------------------------------------------------------------------------------------------

 

 

 

 

 

150°C

 

z Lead Temperature (Soldering, 10 sec.) --------------------------------------------------------------------------------

 

 

 

 

 

260°C

 

z Storage Temperature Range ---------------------------------------------------------------------------------------------

 

 

 

 

 

−65°C to 150°C

z ESD Susceptibility

(Note 3)

 

 

 

 

 

 

 

 

HBM (Human Body Model) -----------------------------------------------------------------------------------------------

 

 

 

 

 

2kV

 

Recommended Operating Conditions

(Note 4)

 

 

 

 

 

 

z Supply Input Voltage, VIN ------------------------------------------------------------------------------------------------

 

 

 

 

 

4.5V to 26V

z Control Voltage, VDD, VDDP --------------------------------------------------------------------------------------------

 

 

 

 

 

4.5V to 5.5V

z Junction Temperature Range ---------------------------------------------------------------------------------------------

 

 

 

 

 

−40°C to 125°C

z Ambient Temperature Range ---------------------------------------------------------------------------------------------

 

 

 

 

 

−40°C to 85°C

Electrical Characteristics

 

 

 

 

 

 

 

 

(VIN = 15V, VDD = VVDDP = 5V, RTON = 1MΩ, TA = 25°C, unless otherwise specified)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

 

Symbol

 

Test Conditions

Min

 

Typ

Max

Unit

PWM Controller

 

 

 

 

 

 

 

 

 

 

 

Quiescent Supply Current

 

 

FB forced above the regulation point,

--

 

470

1000

 

μA

(VDD + VDDP)

 

 

 

VS5 = 5V, VS3 = 0V

 

 

 

 

 

 

 

 

 

 

 

TON Operating Current

 

 

RTON = 1MΩ

 

--

 

15

--

 

μA

IVLDOIN BIAS Current

 

 

VS5 = VS3 = 5V, VTT = No Load

--

 

1

--

 

μA

IVLDOIN Standby Current

 

 

VS5 = 5V, VS3 = 0V, VTT = No Load

--

 

0.1

10

 

μA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Copyright ©2013 Richtek Technology Corporation. All rights reserved.

is a registered trademark of Richtek Technology Corporation.

 

www.richtek.com

 

 

 

 

 

 

DS8207P-01 October

2013

6

 

 

 

 

 

 

 

 

 

 

 

RT8207P

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

PWM Controller

 

 

 

 

 

 

 

 

 

VDD + VVDDP

 

--

1

10

 

Shutdown Current

ISHDN

TON

 

--

0.1

5

μA

(VS5 = VS3 = 0V)

S5/S3 = 0V

 

−1

0.1

1

 

 

 

 

 

IVLDOIN

 

--

0.1

1

 

FB Reference Voltage

VREF

VDD = 4.5V to 5.5V

 

0.742

0.75

0.758

V

Fixed VDDQ Output

 

FB = GND

 

--

1.5

--

V

Voltage

 

FB = VDD

 

--

1.8

--

 

 

 

FB Input Bias Current

 

FB = 0.75V

 

−1

0.1

1

μA

VDDQ Voltage Range

 

 

 

0.75

--

3.3

V

 

 

 

 

 

 

 

On-Time

 

RTON = 1MΩ, VVDDQ = 1.25V

267

334

401

ns

Minimum Off-Time

 

 

 

250

400

550

ns

 

 

 

 

 

 

 

 

VDDQ Input Resistance

 

 

 

--

100

--

 

 

 

 

 

 

 

 

VDDQ Shutdown

 

VS5 = GND

 

--

15

--

Ω

Discharge Resistance

 

 

Current Sensing

 

 

 

 

 

 

 

CS Sink Current

 

VCS > 4.5V

 

9

10

11

μA

Current Limit Comparator

 

(VVDD−CS – VGND−PHASE),

−15

--

15

mV

Offset

 

RCS = 10kΩ

 

 

 

 

 

Zero Crossing Threshold

 

GND − PHASE

 

−5

--

10

mV

 

 

 

 

 

 

 

 

Current Limit Threshold

 

VDD – VCS

 

50

--

200

mV

Setting Range

 

 

Fault Protection

 

 

 

 

 

 

 

Under Voltage Protection

VUVP

 

 

60

70

80

%

Threshold

 

 

Over Voltage Protection

VOVP

With respect to error comparator

113

116

120

%

Threshold

threshold

 

Over Voltage Fault Delay

 

FB forced above over voltage

--

20

--

μs

 

threshold

 

 

 

 

 

 

 

 

VDD POR Threshold

 

Rising edge, hysteresis = 120mV,

3.9

4.2

4.5

V

 

PWM disabled below this level

 

 

 

 

 

 

Under Voltage Blank Time

 

From S5 signal going high

--

5

--

ms

 

 

 

 

 

 

 

 

Thermal Shutdown

TSD

 

 

--

165

--

°C

Thermal Shutdown

TSD

 

 

--

10

--

°C

Hysteresis

 

 

Driver On-Resistance

 

 

 

 

 

 

 

UGATE Driver Source

RUGATEsr

BOOT − PHASE Forced to 5V

--

2.5

5

Ω

UGATE Driver Sink

RUGATEsk

BOOT − PHASE Forced to 5V

--

1.5

3

Ω

LGATE Driver Source

RLGATEsr

DL, High State

 

--

2.5

5

Ω

LGATE Driver Sink

RLGATEsk

DL, Low State

 

--

0.8

1.6

Ω

Dead Time

 

LGATE Rising (PHASE = 1.5V)

--

40

--

ns

 

UGATE Rising

 

--

40

--

 

 

 

 

Internal Boost Charging

 

VDDP to BOOT, 10mA

 

--

--

80

Ω

Switch On Resistance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Copyright ©2013 Richtek Technology Corporation. All rights reserved.

is a registered trademark of Richtek Technology Corporation.

DS8207P-01 October 2013

 

 

 

 

 

www.richtek.com

 

 

 

 

 

 

 

7

RT8207P

Parameter

Symbol

 

 

Test Conditions

 

Min

Typ

Max

Unit

Logic I/O

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Logic Input Low Voltage

 

S3, S5 Low

 

 

 

 

 

 

 

--

--

0.8

V

Logic Input High Voltage

 

S3, S5 High

 

 

 

 

 

 

 

2

--

--

V

 

 

 

 

 

 

 

 

 

 

 

 

 

Logic Input Current

 

S3, S5 = VDD/GND

 

 

 

 

−1

0

1

μA

PGOOD (upper side threshold decide by Over Voltage threshold)

 

 

 

 

 

 

Trip Threshold (Falling)

 

Measured at FB, with respect to

 

−13

−10

−7

%

 

reference, no load

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Trip Threshold (Hysteresis)

 

 

 

 

 

 

 

 

 

 

 

 

--

3

--

%

 

 

 

 

 

 

 

 

 

 

 

 

Fault Propagation Delay

 

Falling edge, FB forced

below

 

--

2.5

--

μs

 

PGOOD trip threshold

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Low Voltage

 

ISINK = 1mA

 

 

 

 

 

 

 

--

--

0.4

V

Leakage Current

ILEAK

High state, forced to 5V

 

 

 

 

--

--

1

μA

VTT LDO

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VVDDQ = VLDOIN = 1.2V/1.35/1.5V/1.8V,

−20

--

20

 

 

 

IVTT = 0A

 

 

 

 

 

 

 

 

 

 

 

 

 

VVDDQ = VLDOIN = 1.2V/1.35/1.5V/1.8V,

−30

--

30

 

VTT Output Tolerance

VVTTTOL

IVTT < 1A

 

 

 

 

 

 

 

 

 

 

mV

VVDDQ = VLDOIN = 1.2V/1.35,

 

−40

--

40

 

 

 

 

 

 

IVTT < 1.2A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VVDDQ = VLDOIN = 1.5V/1.8V,

 

−40

--

40

 

 

 

IVTT < 1.5A

 

 

 

 

 

 

 

 

 

 

 

 

 

VVDDQ

 

 

 

 

 

 

 

 

 

 

 

 

 

VTT =

 

 

 

 

×

0.95

 

 

 

 

1.6

2.6

3.6

 

 

 

 

2

 

 

 

 

 

 

VTT Source Current Limit

IVTTOCLSRC

 

 

 

 

 

 

 

 

 

A

PGOOD = High

 

 

 

 

 

 

 

 

 

 

 

 

VTT = 0V

 

 

 

 

 

 

 

 

 

--

1.3

--

 

 

 

VVDDQ

 

 

 

 

 

 

 

 

 

 

 

 

 

VTT =

 

 

 

 

×1.05 ,

 

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

1.6

2.6

3.6

 

VTT Sink Current Limit

IVTTOCLSNK

 

 

 

 

 

 

 

 

 

A

PGOOD = High

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VTT = VVDDQ

 

 

 

 

 

 

 

--

1.3

--

 

VTT Leakage Current

IVTTLK

S5 = 5V, S3 = 0V,

VTT

 

VVDDQ

−10

--

10

μA

=

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VTTSNS Leakage Current

IVTTSNSLK

ISINK = 1mA

 

 

 

 

 

 

 

−1

--

1

μA

VTT Discharge Current

IDSCHRG

VVDDQ = 0V, VTT = 0.5V, S5 = S3 =0V

10

30

--

mA

VTTREF Output Voltage

VVTTREF

 

 

VVDDQ

 

 

 

 

--

0.9 /

--

V

VVTTREF =

2

 

 

 

 

 

0.75

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VLDOIN = VVDDQ = 1.5V,

 

 

−15

--

15

 

VDDQSNS/2, VTTREF

 

IVTTREF <10mA

 

 

 

 

 

VVTTREFTOL

 

 

 

 

 

 

 

mV

Output Voltage Tolerance

VLDOIN = VVDDQ = 1.8V,

 

 

 

 

−18

--

18

 

 

IVTTREF <10mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VTTREF Source Current

IVTTREFOCL

VVTTREF = 0V

 

 

 

 

 

 

 

10

40

80

mA

Limit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Copyright ©2013 Richtek Technology Corporation. All rights reserved.

is a registered trademark of Richtek Technology Corporation.

www.richtek.com

DS8207P-01 October 2013

8

 

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