Panasonic UNR911L, UNR911H, UNR911E, UNR911D, UNR911CJ Datasheet
...
Transistors with built-in Resistor
B
C
R1
R2
E
1.6±0.15
1.6±0.1
1.0±0.1
0.75±0.15
0.45±0.1
0.5
0.3
0 to 0.1
0.5
0.8±0.1 0.40.4
0.2
+0.1
-0.05
0.15
+0.1
-0.05
1
2
3
0.2±0.1
1.60
+0.05
–0.03
0.70
+0.05
–0.03
0.12
+0.03
–0.01
0 to 0.1
0.80 0.80
0.500.50
1.60±0.05
0.80±0.050.80
0.425 0.425
1.00±0.05
0.27±0.02
0.85
+0.05
–0.03
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Silicon PNP epitaxial planer transistor
For digital circuits
Features
■
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
●
SS-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
Resistance by Part Number
■
Marking Symbol (R1)(R
●
UN9111 6A 10kΩ 10kΩ
●
UN9112 6B 22kΩ 22kΩ
●
UN9113 6C 47kΩ 47kΩ
●
UN9114 6D 10kΩ 47kΩ
●
UN9115 6E 10kΩ —
●
UN9116 6F 4.7kΩ —
●
UN9117 6H 22kΩ —
●
UN9118 6I 0.51kΩ 5.1kΩ
●
UN9119 6K 1kΩ 10kΩ
●
UN9110 6L 47kΩ —
●
UN911D 6M 47kΩ 10kΩ
●
UN911E 6N 47kΩ 22kΩ
●
UN911F 6O 4.7kΩ 10kΩ
●
UN911H 6P 2.2kΩ 10kΩ
●
UN911L 6Q 4.7kΩ 4.7kΩ
●
UNR911AJ 6X 100kΩ 100kΩ
●
UNR911BJ 6Y 100kΩ —
●
UNR911CJ 6Z — 47kΩ
)
2
Unit: mm
1 : Base
2 : Emitter
3 : Collector
SS–Mini Type Pakage
Unit: mm
1 : Base
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Collector current I
Total power dissipation P
Storage temperature T
Junction temperature T
CBO
V
CEO
C
T
j
stg
–50 V
–50 V
–100 mA
125 mW
125 ˚C
–55 to +125 ˚C
Internal Connection
2 : Emitter
3 : Collector
SS–Mini Flat Type Pakage (J type)
1
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
I
Collector cutoff current
UN9111 – 0.5
UN9112/9114/911E/911D – 0.2
Emitter
cutoff
current
UN9113/UNR911AJ – 0.1
UN9115/9116/9117/9110/UNR911BJ
UN911F/911H –1.0
UN9119 –1.5
UN9118/911L/911CJ –2.0
Collector to base voltage V
Collector to emitter voltage V
UN9111 35
Forward
current
transfer
ratio
UN9112/911E 60
UN9113/9114/UNR911AJ/911CJ
UN9115*/9116*/9117*/9110*UNR911BJ
UN911F/911D/9119/911H 30
UN9118/911L 20
Collector to emitter saturation voltage V
Output voltage high level V
Output voltage low level VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2
UN9113/UNR911BJ VCC = –5V, VB = –3.5V, RL = 1kΩ – 0.2
UN911D V
UN911E VCC = –5V, VB = –6V, RL = 1kΩ – 0.2
UNR911AJ VCC = –5V, VB = –5.0V, RL = 1kΩ – 0.2
Transition frequency 150
UNR911AJ
UN9111/9114/9115 10
UN9112/9117 22
UN9113/9110/911D/911E 47
Input
resistance
UN9116/911F/911L
UN9118 0.51
UN9119 1
UN911H 2.2
UNR911AJ/911BJ 100
I
I
h
f
R
CBO
CEO
EBO
FE
T
CBO
CEO
CE(sat)
OH
OL
1
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
VCB = –50V, IE = 0 – 0.1 µA
VCE = –50V, IB = 0 – 0.5 µA
VEB = –6V, IC = 0 – 0.01 mA
IC = –10µA, IE = 0 –50 V
IC = –2mA, IB = 0 –50 V
VCE = –10V, IC = –5mA
IC = –10mA, IB = – 0.3mA – 0.25 V
VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 V
VCC = –5V, VB = –10V, RL = 1kΩ – 0.2 V
VCB = –10V, IE = 2mA, f = 200MHz
80
160 460
80
4.7
(–30%)
(+30%) kΩ
MHz
* hFE rank classification (UN9115/9116/9117/9110)
Rank Q R S
h
FE
160 to 260 210 to 340 290 to 460
2
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor
Electrical Characteristics (continued) (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
UN9111/9112/9113/911L 0.8 1.0 1.2
UN9114 0.17 0.21 0.25
UN9118/9119 0.08 0.1 0.12
Resistance
ratio
Resistance between Emitter to Base
UN911D
UN911E 2.14
UN911F 0.47
UN911H 0.17 0.22 0.27
UNR911AJ 1.0
UNR911CJ
R1/R
R
2
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
2
4.7
–30% 47 30%
3
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor
Common characteristics chart
— Ta
P
T
150
)
125
mW
(
T
100
75
50
25
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
)
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Characteristics charts of UN9111
— V
I
C
CE
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
IB=–1.0mA
–0.9mA
CB
f=1MHz
I
Ta=25˚C
Ta=25˚C
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
=0
E
–100
)
V
(
–30
CE(sat)
–10
–0.3
–0.1
–0.03
V
–3
–1
–25˚C
CE(sat)
25˚C
— I
C
Ta=75˚C
IC/IB=10
hFE — I
160
VCE=–10V
FE
120
80
40
C
Forward current transfer ratio h
Ta=75˚C
25˚C
–25˚C
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
–10000
–3000
)
–1000
µA
(
O
–300
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
IN
VO=–5V
Ta=25˚C
)
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
–100
–30
)
–10
V
(
IN
–3
O
)
VO=–0.2V
Ta=25˚C
3
2
1
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
4
–100
–30
–10
Output current I
–
3
–1
–0.4
)
Input voltage VIN (V
–1.4–1.2–1.0–0.8–0.6
)
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
Output current IO (mA
–1 –3 –10 –30 –100
)
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor
Characteristics charts of UN9112
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
CE
IB=–1.0mA
–0.9mA
–0.8mA
CB
Ta=25˚C
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
f=1MHz
=0
I
E
Ta=25˚C
–100
)
V
(
–30
CE(sat)
–10
–0.3
–0.1
–0.03
V
–3
–1
–25˚C
CE(sat)
25˚C
— I
C
Ta=75˚C
IC/IB=10
hFE — I
400
FE
300
200
100
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
–10000
–3000
)
–1000
µA
(
O
–300
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
IN
VO=–5V
Ta=25˚C
)
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
–100
–30
)
–10
V
(
IN
–3
O
)
VO=–0.2V
Ta=25˚C
3
2
1
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN9113
— V
I
C
CE
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
IB=–1.0mA
–0.9mA
Ta=25˚C
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–100
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
–30
CE(sat)
–10
–0.3
–0.1
–0.03
Input voltage VIN (V
V
–3
–1
–25˚C
CE(sat)
25˚C
— I
C
–1.4–1.2–1.0–0.8–0.6
)
IC/IB=10
Ta=75˚C
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
400
FE
300
200
100
C
VCE=–10V
Forward current transfer ratio h
)
Ta=75˚C
25˚C
–25˚C
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
–1 –3 –10 –30 –100
Collector current IC (mA
)
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
5
Loading...