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UNR621E
Datasheet
13 pgs175.57 Kb0

Panasonic UNR6214, UNR6213, UNR6212, UNR6211, UNR6210 Datasheet

...
Transistors with built-in Resistor
B
C
R1
R2
E
UN6211/6212/6213/6214/6215/6216/6217/6218/ 6219/6210/621D/621E/621F/621K/621L
Silicon NPN epitaxial planer transistor
For digital circuits
Features
■
Costs can be reduced through downsizing of the equipment and reduction of the number of parts.
MT-1 type package, allowing supply with the radial taping.
Resistance by Part Number
■
(R1)(R
UN6211 10kΩ 10kΩ
UN6212 22kΩ 22kΩ
UN6213 47kΩ 47kΩ
UN6214 10kΩ 47kΩ
UN6215 10kΩ —
UN6216 4.7kΩ —
UN6217 22kΩ —
UN6218 0.51kΩ 5.1kΩ
UN6219 1kΩ 10kΩ
UN6210 47kΩ —
UN621D 47kΩ 10kΩ
UN621E 47kΩ 22kΩ
UN621F 4.7kΩ 10kΩ
UN621K 10kΩ 4.7kΩ
UN621L 4.7kΩ 4.7kΩ
)
2
6.9±0.1
0.7 4.0
0.15
0.65 max.
+0.1
0.45
–0.05
2.5±0.5 2.5±0.5
123
Internal Connection
Unit: mm
2.5±0.1
1.05 ±0.05
1.0
0.85
+0.1
1 : Emitter 2 : Collector 3 : Base MT -1 Type Pakage
–0.05
0.45
(1.45)
0.8
0.8
2.5±0.1
3.5±0.114.5±0.5
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage
V Collector current I Total power dissipation P Junction temperature T Storage temperature T
CBO
CEO
C
T
j
stg
50 V
50 V 100 mA 400 mW 150 ˚C
–55 to +150 ˚C
1
UN6211/6212/6213/6214/6215/6216/6217/6218/
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
I
Collector cutoff current
I
CBO
CEO
UN6211 0.5 UN6212/6214/621E/621D 0.2
Emitter cutoff current
UN6213 0.1 UN6215/6216/6217/6210 I
EBO
UN621F/621K 1.0 UN6219 1.5
UN6218/621L 2.0 Collector to base voltage V Collector to emitter voltage V
CBO
CEO
UN6211 35
UN6212/621E 60
Forward current transfer ratio
UN6213/6214
h
UN6215*/6216*/6217*/6210*
FE
UN621F/621D/6219 30
UN6218/621K/621L 20 Collector to emitter saturation voltage V Output voltage high level V
CE(sat)
OH
Output voltage low level VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2
UN6213/621K
V
OL
UN621D VCC = 5V, VB = 10V, R1 = 1kΩ 0.2 UN621E VCC = 5V, VB = 6V, RL = 1kΩ 0.2
Transition frequency f
T
UN6211/6214/6215/621K 10
UN6212/6217 22
Input resis­tance
UN6213/621D/621E/6210
R
UN6216/621F/621L 4.7
1
UN6218 0.51
UN6219 1
UN6211/6212/6213/621L 0.8 1.0 1.2
UN6214 0.17 0.21 0.25
Resis­tance ratio
UN6218/6219 0.08 0.1 0.12
UN621D R1/R
UN621E 1.7 2.14 2.6
UN621F 0.37 0.47 0.57
UN621K 1.7 2.13 2.6
VCB = 50V, IE = 0 0.1 µA VCE = 50V, IB = 0 0.5 µA
VEB = 6V, IC = 0 0.01 mA
IC = 10µA, IE = 0 50 V IC = 2mA, IB = 0 50 V
VCE = 10V, IC = 5mA
IC = 10mA, IB = 0.3mA 0.25 V VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V
VOC = 5V, VB = 3.5V, R1 = 1kΩ 0.2 V
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
2
6219/6210/621D/621E/621F/621K/621L
80
160 460
47
(–30%)
3.7 4.7 5.7
(+30%) kΩ
* hFE rank classification (UN6215/6216/6217/6210)
Rank Q R S
h
FE
160 to 260 210 to 340 290 to 460
2
Transistors with built-in Resistor
Common characteristics chart
— Ta
P
T
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
02040 8060 140120100 160
Ambient temperature Ta (˚C
)
UN6211/6212/6213/6214/6215/6216/6217/6218/
6219/6210/621D/621E/621F/621K/621L
Characteristics charts of UN6211
— V
I
C
CE
160
CB
Ta=25˚C
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz
=0
I
E
Ta=25˚C
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
0
IB=1.0mA
0.9mA
0.8mA
012210486
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
V
100
)
V
(
30
CE(sat)
10
0.3
0.1
0.03
— I
CE(sat)
3
1
–25˚C
25˚C
C
Ta=75˚C
IC/IB=10
400
FE
300
200
100
Forward current transfer ratio h
hFE — I
C
VCE=10V
Ta=75˚C
25˚C
–25˚C
Collector to emitter saturation voltage V
100
30
)
10
V
(
IN
0
13
10 30 100 300 1000
Collector current IC (mA
VIN — I
3
O
VO=0.2V Ta=25˚C
)
0.01
0.1 0.3
)
10000
3000
)
1000
µA
(
O
300
1 3 10 30 100
Collector current IC (mA
IO — V
IN
VO=5V Ta=25˚C
)
3
2
1
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
100
30
10
Output current I
3
1
0.4
)
Input voltage VIN (V
1.41.21.00.80.6
)
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
Output current IO (mA
1 3 10 30 100
)
3
Transistors with built-in Resistor
Characteristics charts of UN6212
UN6211/6212/6213/6214/6215/6216/6217/6218/
6219/6210/621D/621E/621F/621K/621L
— V
I
C
160
140
IB=1.0mA
)
mA
(
C
Collector current I
0.9mA
120
100
80
60
40
20
0.8mA
0
012210486
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
CE
CB
Ta=25˚C
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz I
=0
E
Ta=25˚C
V
100
)
V
(
CE(sat)
0.3
0.1
0.03
— I
CE(sat)
30
10
3
1
25˚C
–25˚C
C
Ta=75˚C
IC/IB=10
400
FE
300
200
100
Forward current transfer ratio h
hFE — I
C
VCE=10V
Ta=75˚C
25˚C
–25˚C
Collector to emitter saturation voltage V
0.01
0.1 0.3
)
10000
3000
)
1000
µA
(
O
300
1 3 10 30 100
Collector current IC (mA
IO — V
IN
VO=5V Ta=25˚C
)
100
30
)
10
V
(
IN
0
13
10 30 100 300 1000
Collector current IC (mA
VIN — I
3
O
VO=0.2V Ta=25˚C
)
3
2
1
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
Characteristics charts of UN6213
— V
I
C
CE
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
0
012210486
IB=1.0mA
Collector to emitter voltage VCE (V
Ta=25˚C
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
100
30
10
Output current I
3
1
0.4
)
100
)
V
(
CE(sat)
0.3
0.1
0.03
Input voltage VIN (V
V
30
10
3
1
–25˚C
CE(sat)
25˚C
— I
C
1.41.21.00.80.6
)
IC/IB=10
Ta=75˚C
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
1 3 10 30 100
Output current IO (mA
hFE — I
400
350
FE
300
250
200
150
100
Forward current transfer ratio h
50
C
VCE=10V
Ta=75˚C
)
25˚C
–25˚C
Collector to emitter saturation voltage V
0.01
0.1 0.3
)
1 3 10 30 100
Collector current IC (mA
)
0
13
10 30 100 300 1000
Collector current IC (mA
)
4
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