Panasonic UNR6122, UNR6121, UNR612Y, UNR612X, UNR6124 Datasheet
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Transistors with built-in Resistor
B
C
R1
R2
E
UN6121/6122/6123/6124/612X/612Y
Silicon PNP epitaxial planer transistor
For digital circuits
Features
■
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
●
MT-1 type package, allowing supply with the radial taping.
0.15
0.65 max.
6.9±0.1
0.7 4.0
1.05
±0.05
1.0
2.5±0.1
Unit: mm
(1.45)
0.8
0.8
3.5±0.114.5±0.5
Resistance by Part Number
■
(R1)(R
●
UN6121 2.2kΩ 2.2kΩ
●
UN6122 4.7KΩ 4.7kΩ
●
UN6123 10kΩ 10kΩ
●
UN6124 2.2kΩ 10kΩ
●
UN612X 0.27kΩ 5kΩ
●
UN612Y 3.1kΩ 4.6kΩ
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T
CBO
V
CEO
C
T
j
stg
)
2
–50 V
–50 V
–500 mA
600 mW
150 ˚C
–55 to +150 ˚C
+0.1
0.45
–0.05
2.5±0.5 2.5±0.5
123
Internal Connection
0.85
–0.05
+0.1
0.45
2.5±0.1
1 : Emitter
2 : Collector
3 : Base
MT -1 Type Pakage
1
Transistors with built-in Resistor UN6121/6122/6123/6124/612X/612Y
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
Collector cutoff current I
UN612X I
Collector cutoff current I
UN612X I
Emitter
cutoff
current
UN6121 –5
UN6122/612X/612Y I
UN6123/6124 –1
Collector to base voltage V
Collector to emitter voltage V
Forward
current
transfer
ratio
UN6121 40
UN6122/612Y
UN6123/6124 60
UN612X 20
Collector to emitter saturation voltage V
UN612X V
UN612Y V
Output voltage high level V
Output voltage low level V
Transition frequency f
h
CBO
CBO
CEO
CEO
EBO
FE
T
CBO
CEO
CE(sat)
CE(sat)
CE(sat)
OH
OL
UN6121 2.2
Input
resistance
UN6122 4.7
UN6123 R
1
UN612X 0.27
UN612Y 3.1
Resistance ratio 0.8 1.0 1.2
UN6124
R1/R
UN612X 0.043 0.054 0.065
UN612Y 0.67
VCB = –50V, IE = 0 –1
VCB = –50V, IE = 0 – 0.1
VCE = –50V, IB = 0 –1
VCE = –50V, IB = 0 – 0.5
VEE = –6V, IC = 0 –2 mA
IC = –10µA, IE = 0 –50 V
IC = –2mA, IB = 0 –50 V
50
VCE = –10V, IC = –100mA
IC = –100mA, IB = –5mA – 0.25
IC = –10mA, IB = – 0.3mA – 0.25 V
IC = –50mA, IB = –5mA – 0.15
VCC = –5V, VB = – 0.5V, RL = 500Ω –4.9 V
VCC = –5V, VB = –3.5V, RL = 500Ω – 0.2 V
VCB = –10V, IE = 50mA, f = 200MHz
80 MHz
(–30%) 10 (+30%) kΩ
0.17 0.22 0.27
2
µA
µA
Common characteristics chart
PT — Ta
800
)
700
mW
(
600
T
500
400
300
200
100
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
2
)
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