Panasonic UNR611L, UNR611H, UNR611F, UNR611E, UNR611D Datasheet
...
Transistors with built-in Resistor
B
C
R1
R2
E
UN6111/6112/6113/6114/6115/6116/6117/6118/
6119/6110/611D/611E/611F/611H/611L
Silicon PNP epitaxial planer transistor
For digital circuits
Features
■
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
●
MT-1 type package, allowing supply with the radial taping.
Resistance by Part Number
■
(R1)(R
●
UN6111 10kΩ 10kΩ
●
UN6112 22kΩ 22kΩ
●
UN6113 47kΩ 47kΩ
●
UN6114 10kΩ 47kΩ
●
UN6115 10kΩ —
●
UN6116 4.7kΩ —
●
UN6117 22kΩ —
●
UN6118 0.51kΩ 5.1kΩ
●
UN6119 1kΩ 10kΩ
●
UN6110 47kΩ —
●
UN611D 47kΩ 10kΩ
●
UN611E 47kΩ 22kΩ
●
UN611F 4.7kΩ 10kΩ
●
UN611H 2.2kΩ 10kΩ
●
UN611L 4.7kΩ 4.7kΩ
)
2
6.9±0.1
0.7 4.0
0.15
0.65 max.
+0.1
0.45
–0.05
2.5±0.5 2.5±0.5
123
Internal Connection
Unit: mm
2.5±0.1
1.05
±0.05
1.0
0.85
+0.1
1 : Emitter
2 : Collector
3 : Base
MT-1 Type Package
–0.05
0.45
(1.45)
0.8
0.8
2.5±0.1
3.5±0.114.5±0.5
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
V
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
C
T
j
stg
–50 V
–50 V
–100 mA
400 mW
150 ˚C
–55 to +150 ˚C
1
UN6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
I
Collector cutoff current
UN6111 – 0.5
UN6112/6114/611E/611D – 0.2
Emitter
cutoff
current
UN6113 – 0.1
UN6115/6116/6117/6110 I
UN611F/611H –1.0
UN6119 –1.5
UN6118/611L –2.0
Collector to base voltage V
Collector to emitter voltage V
UN6111 35
UN6112/611E 60
Forward
current
transfer
ratio
UN6113/6114
UN6115*/6116*/6117*/6110*
UN611F/611D/6119/611H 30
UN6118/611L 20
Collector to emitter saturation voltage V
Output voltage high level V
Output voltage low level VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2
UN6113
UN611D VCC = –5V, VB = –10V, RL = 1kΩ – 0.2
UN611E VCC = –5V, VB = –6V, RL = 1kΩ – 0.2
Transition frequency f
UN6111/6114/6115 10
UN6112/6117 22
Input
resistance
UN6113/6110/611D/611E 47
UN6116/611F/611L R
UN6118 0.51
UN6119 1
UN611H 2.2
UN6111/6112/6113/611L 0.8 1.0 1.2
UN6114 0.17 0.21 0.25
Resistance
ratio
UN6118/6119 0.08 0.1 0.12
UN611D R1/R
UN611E 1.7 2.14 2.6
UN611F 0.37 0.47 0.57
UN611H 0.17 0.22 0.27
I
h
V
CBO
CEO
EBO
FE
T
CBO
CEO
CE(sat)
OH
OL
1
2
6118/6119/6110/611D/611E/611F/611H/611L
VCB = –50V, IE = 0 – 0.1 µA
VCE = –50V, IB = 0 – 0.5 µA
VEB = –6V, IC = 0 – 0.01 mA
IC = –10µA, IE = 0 –50 V
IC = –2mA, IB = 0 –50 V
80
VCE = –10V, IC = –5mA
160 460
IC = –10mA, IB = – 0.3mA – 0.25 V
VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 V
VCC = –5V, VB = –3.5V, RL = 1kΩ – 0.2
VCB = –10V, IE = 1mA, f = 200MHz 80 MHz
(–30%) 4.7 (+30%) kΩ
3.7 4.7 5.7
V
* hFE rank classification (UN6115/6116/6117/6110)
Rank Q R S
h
FE
160 to 260 210 to 340 290 to 460
2
Transistors with built-in Resistor
Common characteristics chart
— Ta
P
T
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
02040 8060 140120100 160
Ambient temperature Ta (˚C
)
UN6111/6112/6113/6114/6115/6116/6117/
6118/6119/6110/611D/611E/611F/611H/611L
Characteristics charts of UN6111
— V
I
C
CE
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
IB=–1.0mA
–0.9mA
CB
f=1MHz
I
Ta=25˚C
Ta=25˚C
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
=0
E
–100
)
V
(
–30
CE(sat)
–10
–0.3
–0.1
–0.03
V
–3
–1
–25˚C
CE(sat)
25˚C
— I
C
Ta=75˚C
IC/IB=10
hFE — I
160
VCE=–10V
FE
120
80
40
C
Forward current transfer ratio h
Ta=75˚C
25˚C
–25˚C
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
–10000
–3000
)
–1000
µA
(
O
–300
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
IN
VO=–5V
Ta=25˚C
)
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
–100
–30
)
–10
V
(
IN
–3
O
)
VO=–0.2V
Ta=25˚C
3
2
1
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
–100
–30
–10
Output current I
–
3
–1
–0.4
)
Input voltage VIN (V
–1.4–1.2–1.0–0.8–0.6
)
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
Output current IO (mA
–1 –3 –10 –30 –100
)
3
Transistors with built-in Resistor
Characteristics charts of UN6112
UN6111/6112/6113/6114/6115/6116/6117/
6118/6119/6110/611D/611E/611F/611H/611L
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
CE
IB=–1.0mA
–0.9mA
–0.8mA
CB
Ta=25˚C
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
f=1MHz
=0
I
E
Ta=25˚C
–100
)
V
(
–30
CE(sat)
–10
–0.3
–0.1
–0.03
V
–3
–1
–25˚C
CE(sat)
25˚C
— I
C
Ta=75˚C
IC/IB=10
hFE — I
400
FE
300
200
100
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
–10000
–3000
)
–1000
µA
(
O
–300
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
IN
VO=–5V
Ta=25˚C
)
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
–100
–30
)
–10
V
(
IN
–3
O
)
VO=–0.2V
Ta=25˚C
3
2
1
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN6113
— V
I
C
CE
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
IB=–1.0mA
–0.9mA
Ta=25˚C
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–100
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
–30
CE(sat)
–10
–0.3
–0.1
–0.03
Input voltage VIN (V
V
–3
–1
–25˚C
CE(sat)
25˚C
— I
C
–1.4–1.2–1.0–0.8–0.6
)
IC/IB=10
Ta=75˚C
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
400
FE
300
200
100
C
VCE=–10V
Forward current transfer ratio h
)
Ta=75˚C
25˚C
–25˚C
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
–1 –3 –10 –30 –100
Collector current IC (mA
)
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
4
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