查询UNR1110供应商
Transistors with built-in Resistor
UNR111x Series (UN111x Series)
Silicon PNP epitaxial planar transistor
For digital circuits
■ Features
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
•
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Resistance by Part Number
(R1)(R
• UNR1110 (UN1110) 47 kΩ
• UNR1111 (UN1111) 10 kΩ 10 kΩ
• UNR1112 (UN1112) 22 kΩ 22 kΩ
• UNR1113 (UN1113) 47 kΩ 47 kΩ
• UNR1114 (UN1114) 10 kΩ 47 kΩ
• UNR1115 (UN1115) 10 kΩ
• UNR1116 (UN1116) 4.7 kΩ
• UNR1117 (UN1117) 22 kΩ
• UNR1118 (UN1118) 0.51 kΩ 5.1 kΩ
• UNR1119 (UN1119) 1 kΩ 10 kΩ
• UNR111D (UN111D) 47 kΩ 10 kΩ
• UNR111E (UN111E) 47 kΩ 22 kΩ
• UNR111F (UN111F) 4.7 kΩ 10 kΩ
• UNR111H (UN111H) 2.2 kΩ 10 kΩ
• UNR111L (UN111L) 4.7 kΩ 4.7 kΩ
)
2
(0.4)
R 0.7
±0.1
1.0
Internal Connection
(1.5)
6.9
(1.5)
(0.85)
0.55
B
±0.1
±0.1
R 0.9
213
(2.5)(2.5)
R
R
Unit: mm
2.5
±0.1
(1.0)
(1.0)
±0.1
3.5
±0.2
2.0
±0.2
2.4
±0.05
1.25
M-A1 Package
1
2
C
0.45
±0.05
1: Base
2: Collector
3: Emitter
±0.1
4.5
±0.2
4.1
E
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Collector current I
Total power dissipation
Junction temperature T
Storage temperature T
Publication date: October 2003 SJH00001BED
CBO
CEO
P
C
T
j
stg
−50 V
−50 V
−100 mA
400 mW
150 °C
−55 to +150 °C
Note) The part numbers in the parenthesis show conventional part number.
1
UNR111x Series
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base UNR1111 I
cutoff current
(Collector open)
UNR1112/1114/111D/111E
UNR1113 − 0.1
CBOIC
CEOIC
I
CBO
I
CEO
EBO
UNR1110/1115/1116/1117
UNR111F/111H −1.0
UNR1119 −1.5
UNR1118/111L −2.0
Forward current
UNR1111 h
FE
transfer ratio UNR1112/111E 60
UNR1113/1114 80
UNR1110 */1115 */1116 */
*
1117
UNR1118/111L 20
UNR1119/111D/111F/111H
Collector-emitter saturation voltage V
Output voltage high-level V
Output voltage low-level V
CE(sat)IC
OH
OL
UNR1113 VCC = −5 V, VB = −3.5 V, RL = 1 kΩ
UNR111D VCC = −5 V, VB = −10 V, RL = 1 kΩ
UNR111E VCC = −5 V, VB = −6 V, RL = 1 kΩ
Transition frequency f
Input resistance
UNR1111/1114/1115 R
UNR1112/1117 22
UNR1110/1113/111D/111E
UNR1116/111F/111L 4.7
UNR1118 0.51
UNR1119 1
UNR111H 2.2
Resistance ratio
UNR1111/1112/1113/111L
R1/R
UNR1114 0.17 0.21 0.25
UNR1118/1119 0.08 0.1 0.12
UNR111D 4.7
UNR111E 2.14
UNR111F 0.47
UNR111H 0.17 0.22 0.27
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification (UNR1110/1115/1116/1117)
Rank Q R S
h
FE
160 to 260 210 to 340 290 to 460
= −10 µA, IE = 0 −50 V
= −2 mA, IB = 0 −50 V
VCB = −50 V, IE = 0 − 0.1 µA
VCE = −50 V, IB = 0 − 0.5 µA
VEB = −6 V, IC = 0 − 0.5 mA
VCE = −10 V, IC = −5 mA 35
160 460
30
= −10 mA, IB = − 0.3 mA − 0.25 V
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ−4.9 V
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ− 0.2 V
VCB = −10 V, IE = 2 mA, f = 200 MHz 80 MHz
T
1
−30% 10 +30% kΩ
47
2
0.8 1.0 1.2
− 0.2
− 0.01
2
SJH00001BED
Common characteristics chart
PT T
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
0 40 80 120 160
Ambient temperature Ta (°C
a
)
Characteristics charts of UNR1110
IC V
− 0.7 mA
− 0.6 mA
CE
Ta = 25°C
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
)
−120
= −1.0 mA
I
B
− 0.9 mA
−100
− 0.8 mA
)
mA
(
−80
C
−60
−40
Collector current I
−20
0
0 −12−2 −10−4 −8−6
Collector-emitter voltage VCE (V
V
I
−100
)
V
(
CE(sat)
−10
−1
−
0.1
Collector-emitter saturation voltage V
− 0.01
−0.1
CE(sat)
25°C
−25°C
−1 −10 −100
C
I
C
Ta = 75°C
/ I
Collector current IC (mA
UNR111x Series
hFE I
= 10
B
400
FE
300
200
100
Forward current transfer ratio h
0
−1
)
−10 −100
Collector current IC (mA
C
V
CE
Ta = 75°C
25°C
−25°C
= –10 V
−1 000
)
Cob V
6
(pF)
ob
5
C
4
3
2
1
Collector output capacitance
(Common base, input open circuited)
0
0.1
−
−1 −10 −100
CB
f = 1 MHz
I
E
Ta = 25°C
Collector-base voltage VCB (V)
IO V
4
−10
= 0
3
−10
)
µA
(
O
2
−10
Output current I
−10
−1
− 0.4
Input voltage VIN (V
IN
= −5 V
V
O
Ta = 25°C
)
−100
−10
)
V
(
IN
−1
Input voltage V
0.1
−
− 0.01
0.1
−1.4−1.2−1.0− 0.8− 0.6
−
SJH00001BED
VIN I
O
V
O
T
= 25°C
a
−1 −10 −100
Output current IO (mA
= − 0.2 V
)
3
UNR111x Series
0
Characteristics charts of UNR1111
IC V
−160
= −1.0 mA
I
B
)
−120
mA
(
C
−80
−40
Collector current I
0
0 −12−2 −10−4 −8−6
Collector-emitter voltage VCE (V
Cob V
6
(pF)
ob
5
C
4
3
CE
− 0.9 mA
CB
Ta = 25°C
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
f = 1 MHz
= 0
I
E
T
= 25°C
a
V
I
−100
)
V
(
CE(sat)
−10
−1
0.1
−
Collector-emitter saturation voltage V
− 0.01
− 0.1
)
CE(sat)
25°C
−25°C
−1 −10 −100
Collector current IC (mA
IO V
4
−10
3
−10
)
µA
(
O
2
−10
IN
C
/ I
I
C
B
Ta = 75°C
VO = −5 V
= 25°C
T
a
)
= 10
160
V
FE
120
80
40
Forward current transfer ratio h
0
−1
−100
−10
)
V
(
IN
−1
hFE I
C
= −10 V
CE
−10 −100
Collector current IC (mA
VIN I
O
Ta = 75°C
25°C
−25°C
= −
V
O
Ta = 25°C
)
0.2 V
−1 000
2
1
Collector output capacitance
(Common base, input open circuited)
0
0.1
−
−1 −10 −10
Collector-base voltage VCB (V)
Characteristics charts of UNR1112
IC V
IB = −1.0 mA
CE
− 0.9 mA
− 0.8 mA
Ta = 25°C
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
)
−160
)
−120
mA
(
C
−80
−40
Collector current I
0
0 −12−2 −10−4 −8−6
Collector-emitter voltage VCE (V
Output current I
−10
−1
0.4
−
I
)
C
I
/ I
C
Ta = 75°C
Input voltage VIN (V
V
−100
)
V
(
CE(sat)
−10
−1
−
0.1
Collector-emitter saturation voltage V
− 0.01
− 0.1
CE(sat)
25°C
−25°C
−1 −10 −100
Collector current IC (mA
Input voltage V
−
0.1
− 0.01
0.1
−1.4−1.2−1.0− 0.8− 0.6
= 10
B
−
400
FE
300
200
100
−1 −10 −100
Output current IO (mA
hFE I
C
V
CE
Ta = 75°C
25°C
−25°C
)
= −10 V
Forward current transfer ratio h
0
−1
)
−10 −100 −1 000
Collector current IC (mA
)
4
SJH00001BED
UNR111x Series
Cob V
6
(pF)
ob
5
C
4
3
2
1
Collector output capacitance
(Common base, input open circuited)
0
0.1
−
−1 −10 −100
CB
f = 1 MHz
= 0
I
E
T
= 25°C
a
Collector-base voltage VCB (V)
Characteristics charts of UNR1113
IC V
−160
)
−120
mA
(
C
−80
−40
Collector current I
0
0 −12−2 −10−4 −8−6
Collector-emitter voltage VCE (V
= −1.0 mA
I
B
CE
− 0.9 mA
− 0.8 mA
Ta = 25°C
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
)
IO V
4
−10
3
−10
)
µA
(
O
2
−10
Output current I
−10
−1
0.4
−
Input voltage VIN (V
V
−100
)
V
(
CE(sat)
−10
−1
−
0.1
−25°C
Collector-emitter saturation voltage V
− 0.01
− 0.1
IN
V
O
T
= 25°C
a
)
I
CE(sat)
25°C
−1 −10 −100
C
/ I
I
C
Ta = 75°C
Collector current IC (mA
= −5 V
= 10
B
)
VIN I
hFE I
O
V
Ta = 25°C
C
V
= −
0.2 V
O
)
= −10 V
CE
Ta = 75°C
25°C
−25°C
−100
−10
)
V
(
IN
−1
Input voltage V
0.1
−
−1.4−1.2−1.0− 0.8− 0.6
− 0.01
0.1
−
−1 −10 −100
Output current IO (mA
400
FE
300
200
100
Forward current transfer ratio h
0
−1
−10 −100
Collector current IC (mA
−1 000
)
6
Cob V
(pF)
ob
5
C
4
3
2
1
Collector output capacitance
(Common base, input open circuited)
0
0.1
−
−1 −10 −100
CB
f = 1 MHz
I
E
T
Collector-base voltage VCB (V)
= 0
= 25°C
a
4
−10
3
−10
)
µA
(
O
2
−10
Output current I
−10
−1
−
0.4
Input voltage VIN (V
SJH00001BED
IO V
IN
V
O
T
a
= −5 V
= 25°C
−1.4−1.2−1.0− 0.8− 0.6
−100
−10
)
V
(
IN
−1
Input voltage V
−
0.1
− 0.01
0.1
−
)
VIN I
O
V
O
Ta = 25°C
−1 −10 −100
Output current IO (mA
= − 0.2 V
)
5
UNR111x Series
Characteristics charts of UNR1114
IC V
−160
= −1.0 mA
I
B
)
−120
mA
(
C
−80
−40
Collector current I
0
0 −12−2 −10−4 −8−6
Collector-emitter voltage VCE (V
Cob V
6
(pF)
ob
5
C
4
3
CE
− 0.9 mA
CB
Ta = 25°C
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
f = 1 MHz
= 0
I
E
T
= 25°C
a
V
−100
)
V
(
CE(sat)
−
−10
I
CE(sat)
−1
0.1
25°C
C
/ I
I
C
B
Ta = 75°C
= 10
400
FE
300
200
100
hFE I
C
V
CE
Ta = 75°C
25°C
−25°C
= −10 V
Forward current transfer ratio h
−25°C
Collector-emitter saturation voltage V
− 0.01
− 0.1
)
4
−10
3
−10
)
µA
(
O
2
−10
−1 −10 −100
Collector current IC (mA
IO V
IN
V
O
T
= 25°C
a
)
= −5 V
−1
)
V
(
0
−1
Collector current IC (mA
000
−100
IN
−10
−10 −100
VIN I
O
)
= − 0.2 V
V
O
Ta = 25°C
−1 000
2
1
Collector output capacitance
(Common base, input open circuited)
0
0.1
−
−1 −10 −100
Collector-base voltage VCB (V)
Characteristics charts of UNR1115
IC V
−160
= −1.0 mA
I
B
)
−120
mA
(
C
−80
−40
Collector current I
0
0 −12−2 −10−4 −8−6
Collector-emitter voltage VCE (V
CE
− 0.9 mA
Ta = 25°C
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
)
Output current I
−10
−1
0.4
−
I
)
C
/ I
I
C
B
Ta = 75°C
Input voltage VIN (V
V
−100
)
V
(
CE(sat)
−10
−1
−
0.1
Collector-emitter saturation voltage V
− 0.01
−0.1
CE(sat)
25°C
−25°C
−1 −10 −100
Collector current IC (mA
= 10
)
Input voltage V
−1
FE
− 0.1
400
300
200
100
0.1
−
−1 −10 −100
Output current IO (mA
hFE I
C
V
CE
Ta = 75°C
25°C
−25°C
)
= −10 V
−1.4−1.2−1.0− 0.8− 0.6
Forward current transfer ratio h
0
−1
−10 −100
Collector current IC (mA
−1 000
)
6
SJH00001BED
UNR111x Series
0
2
Cob V
6
(pF)
ob
5
C
4
3
2
1
Collector output capacitance
(Common base, input open circuited)
0
0.1
−
−1 −10 −1
CB
f = 1 MHz
I
= 0
E
T
= 25°C
a
Collector-base voltage VCB (V)
Characteristics charts of UNR1116
IC V
= −1.0 mA
I
B
CE
− 0.9 mA
Ta = 25°C
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
)
−160
)
−120
mA
(
C
−80
−40
Collector current I
0
−2 −10−4 −8−6
0 −1
Collector-emitter voltage VCE (V
IO V
4
−10
3
−10
)
µA
(
O
2
−10
Output current I
−10
−1
0.4
−
Input voltage VIN (V
V
−100
)
V
(
CE(sat)
−10
−1
0.1
−
−25°C
Collector-emitter saturation voltage V
− 0.01
− 0.1
IN
V
O
T
= 25˚C
a
)
I
CE(sat)
−1 −10 −100
25°C
C
/ I
I
C
Ta = 75°C
Collector current IC (mA
= −5 V
= 10
B
)
VIN I
hFE I
O
VO = − 0.2 V
Ta = 25°C
C
V
CE
Ta = 75°C
25°C
−25°C
)
= −10 V
−100
−10
)
V
(
IN
−1
Input voltage V
0.1
−
− 0.01
0.1
−1.4−1.2−1.0− 0.8− 0.6
−
−1 −10 −100
Output current IO (mA
400
FE
300
200
100
Forward current transfer ratio h
0
−1
−10 −100
Collector current IC (mA
−1 000
)
Cob V
6
(pF)
ob
5
C
4
3
2
1
Collector output capacitance
(Common base, input open circuited)
0
0.1
−
−1 −10 −100
CB
f = 1 MHz
I
E
T
Collector-base voltage VCB (V)
= 0
= 25°C
a
4
−10
3
−10
)
µA
(
O
2
−10
Output current I
−10
−1
0.4
−
Input voltage VIN (V
SJH00001BED
IO V
IN
V
O
T
a
= −5 V
= 25°C
−1.4−1.2−1.0− 0.8− 0.6
−100
−10
)
V
(
IN
−1
Input voltage V
−
0.1
− 0.01
0.1
−
)
VIN I
O
V
O
T
a
−1 −10 −100
Output current IO (mA
= −
= 25°C
)
0.2 V
7
UNR111x Series
Characteristics charts of UNR1117
IC V
−120
= −1.0 mA
−100
)
mA
(
C
−80
−60
−40
I
B
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
Collector current I
−20
0
0 −12−2 −10−4 −8−6
Collector-emitter voltage VCE (V
Cob V
6
(pF)
ob
5
C
4
3
CE
− 0.4 mA
CB
Ta = 25°C
− 0.3 mA
− 0.2 mA
− 0.1 mA
f = 1 MHz
= 0
I
E
T
= 25°C
a
V
I
−100
CE(sat)
)
V
(
CE(sat)
−10
−1
0.1
−
Collector-emitter saturation voltage V
− 0.01
)
− 0.1
4
−10
3
−10
)
µA
(
O
2
−10
−1 −10 −100
Collector current IC (mA
IO V
25°C
−25°C
IN
C
/ I
I
C
Ta = 75°C
= −5 V
V
O
T
= 25°C
a
= 10
B
400
FE
300
200
100
Forward current transfer ratio h
0
−1
)
−100
−10
)
V
(
IN
−1
hFE I
C
V
CE
Ta = 75°C
25°C
−25°C
−10 −100
Collector current IC (mA
VIN I
O
V
O
T
= 25°C
a
= −10 V
)
= −
0.2 V
−1 000
2
1
Collector output capacitance
(Common base, input open circuited)
0
−0.1
−1 −10 −100
Collector-base voltage VCB (V)
Characteristics charts of UNR1118
IC V
−240
−200
)
mA
(
−160
C
−120
−80
Collector current I
−40
0
0 −12−2 −10−4 −8−6
Collector-emitter voltage VCE (V
CE
Ta = 25°C
= −
I
1.0 mA
B
− 0.9 mA
− 0.8 mA
− 0.7 mA
−
0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
)
Output current I
−10
−1
0.4
−
I
)
C
/ I
I
C
Ta = 75°C
Input voltage VIN (V
V
−100
)
V
(
CE(sat)
−10
−1
−
0.1
Collector-emitter saturation voltage V
− 0.01
− 0.1
CE(sat)
25°C
−25°C
−1 −10 −100
Collector current IC (mA
Input voltage V
0.1
−
−1.4−1.2−1.0− 0.8− 0.6
= 10
B
− 0.01
160
FE
120
0.1
−
Output current IO (mA
80
40
−1 −10 −100
)
hFE I
C
= −10 V
V
CE
Ta = 75°C
25°C
−25°C
Forward current transfer ratio h
0
−1
)
−10 −100
Collector current IC (mA
−1 000
)
8
SJH00001BED
UNR111x Series
Cob V
6
(pF)
ob
5
C
4
3
2
1
Collector output capacitance
(Common base, input open circuited)
0
0.1
−
−1 −10 −100
CB
f = 1 MHz
I
= 0
E
T
= 25°C
a
Collector-base voltage VCB (V)
Characteristics charts of UNR1119
IC V
= −1.0 mA
B
− 0.9 mA
− 0.8 mA
CE
− 0.7 mA
Ta = 25°C
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
)
−240
−200
)
mA
(
C
−160
−120
−80
I
Collector current I
−40
0
0 −12−2 −10−4 −8−6
Collector-emitter voltage VCE (V
IO V
4
−10
3
−10
)
µA
(
O
2
−10
Output current I
−10
−1
0.4
−
Input voltage VIN (V
V
−100
)
V
(
CE(sat)
−10
−1
−
0.1
−25°C
Collector-emitter saturation voltage V
− 0.01
− 0.1
IN
= −5 V
V
O
T
= 25°C
a
)
I
CE(sat)
25°C
−1 −10 −100
C
/ I
I
C
Ta = 75°C
Collector current IC (mA
VIN I
hFE I
O
V
O
T
a
C
V
CE
Ta = 75°C
25°C
−25°C
= −
= 25°C
)
= −10 V
0.2 V
−100
−10
)
V
(
IN
−1
Input voltage V
0.1
−
− 0.01
0.1
−1.4−1.2−1.0− 0.8− 0.6
−
−1 −10 −100
Output current IO (mA
= 10
B
160
FE
120
80
40
Forward current transfer ratio h
0
−1
)
−10 −100
Collector current IC (mA
−1 000
)
Cob V
6
(pF)
ob
5
C
4
3
2
1
Collector output capacitance
(Common base, input open circuited)
0
−
0.1
−1 −10 −100
CB
f = 1 MHz
I
E
T
Collector-base voltage VCB (V)
= 0
= 25°C
a
4
−10
3
−10
)
µA
(
O
2
−10
Output current I
−10
−1
0.4
−
Input voltage VIN (V
SJH00001BED
IO V
IN
V
O
T
= 25°C
a
= −5 V
−1.4−1.2−1.0− 0.8− 0.6
−100
−10
)
V
(
IN
−1
Input voltage V
0.1
−
− 0.01
0.1
−
)
VIN I
O
V
O
T
a
−1 −10 −100
Output current IO (mA
= −0.2 V
= 25°C
)
9
UNR111x Series
Characteristics charts of UNR111D
IC V
−60
−50
)
mA
(
−40
C
−30
−20
Collector current I
−10
0
= − 1.0 mA
I
B
− 0.9 mA
− 0.8 mA
− 0.5 mA
− 0.4 mA
0 −12−2 −10−4 −8−6
Collector-emitter voltage VCE (V
Cob V
6
(pF)
ob
5
C
4
3
CE
− 0.7 mA
− 0.6 mA
CB
Ta = 25˚C
− 0.3 mA
− 0.2 mA
− 0.1 mA
f = 1 MHz
= 0
I
E
T
= 25°C
a
V
I
−
100
)
V
(
CE(sat)
−
10
−
1
−
0.1
Collector-emitter saturation voltage V
−
0.01
− 0.1
)
25°C
−25°C
−1 −10 −100
Collector current IC (mA
IO V
4
−10
3
−10
)
µA
(
O
2
−10
CE(sat)
C
IC / I
Ta = 75°C
IN
V
O
T
a
= 10
B
)
= −5 V
= 25°C
160
FE
120
80
40
Forward current transfer ratio h
0
−1
−100
−10
)
V
(
IN
−1
hFE I
C
V
CE
Ta = 75°C
25°C
−25°C
−10 −100
Collector current IC (mA
VIN I
O
= − 0.2 V
V
O
T
= 25°C
a
= −10 V
)
−1 000
2
1
Collector output capacitance
(Common base, input open circuited)
0
0.1
−
−1 −10 −100
Collector-base voltage VCB (V)
Characteristics charts of UNR111E
IC V
− 0.5 mA
− 0.4 mA
CE
− 0.6 mA
Ta = 25°C
− 0.3 mA
− 0.2 mA
− 0.1 mA
)
−60
IB = −1.0 mA
− 0.9 mA
−50
− 0.8 mA − 0.7 mA
)
mA
(
−40
C
−30
−20
Collector current I
−10
0
0 −12−2 −10−4 −8−6
Collector-emitter voltage VCE (V
Output current I
−10
−1
−1.5
I
)
C
/ I
I
C
B
Ta = 75°C
Input voltage VIN (V
V
−100
)
V
(
CE(sat)
−10
−1
−
0.1
Collector-emitter saturation voltage V
− 0.01
− 0.1
CE(sat)
25°C
−25°C
−1 −10 −100
Collector current IC (mA
= 10
)
Input voltage V
−
0.1
− 0.01
0.1
−4.0−3.5−3.0−2.5−2.0
−
400
FE
300
200
100
Forward current transfer ratio h
0
−1
−1 −10 −100
Output current IO (mA
hFE I
C
V
CE
Ta = 75°C
25°C
−25°C
−10 −100
Collector current IC (mA
)
= −10 V
)
−1 000
10
SJH00001BED
UNR111x Series
Cob V
6
(pF)
ob
5
C
4
3
2
1
Collector output capacitance
(Common base, input open circuited)
0
0.1
−
−1 −10 −100
CB
f = 1 MHz
= 0
I
E
T
= 25°C
a
Collector-base voltage VCB (V)
Characteristics charts of UNR111F
IC V
− 0.9 mA
− 0.8 mA
CE
− 0.7 mA
− 0.6 mA
Ta = 25°C
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
)
−240
= −1.0 mA
I
−200
B
)
mA
(
−160
C
−120
−80
Collector current I
−40
0
0 −12−2 −10−4 −8−6
Collector-emitter voltage VCE (V
IO V
4
−10
3
−10
)
µA
(
O
2
−10
Output current I
−10
−1
−1.5
Input voltage VIN (V
V
−100
)
V
(
CE(sat)
−10
−1
−
0.1
−25°C
Collector-emitter saturation voltage V
− 0.01
− 0.1
IN
V
O
T
= 25°C
a
)
I
CE(sat)
25°C
−1 −10 −100
C
/ I
I
C
Ta = 75°C
Collector current IC (mA
= −5 V
= 10
B
)
VIN I
hFE I
O
VO = − 0.2 V
Ta = 25°C
C
V
CE
Ta = 75°C
25°C
−25°C
)
= −10 V
−100
−10
)
V
(
IN
−1
Input voltage V
−
0.1
−4.0−3.5−3.0−2.5−2.0
− 0.01
0.1
−
−1 −10 −100
Output current IO (mA
160
FE
120
80
40
Forward current transfer ratio h
0
−1
−10 −100
Collector current IC (mA
−1 000
)
Cob V
6
(pF)
ob
5
C
4
3
2
1
Collector output capacitance
(Common base, input open circuited)
0
0.1
−
−1 −10 −100
CB
f = 1 MHz
I
T
Collector-base voltage VCB (V)
= 0
E
= 25°C
a
4
−10
3
−10
)
µA
(
O
2
−10
Output current I
−10
−1
0.4
−
Input voltage VIN (V
SJH00001BED
IO V
IN
VO = −5 V
T
= 25°C
a
)
VIN I
−100
−10
)
V
(
IN
−1
Input voltage V
−
0.1
−1.4−1.2−1.0− 0.8− 0.6
− 0.01
0.1
−
−1 −10 −100
Output current IO (mA
O
= −
V
0.2 V
O
T
= 25°C
a
)
11
UNR111x Series
2
Characteristics charts of UNR111H
−120
−100
)
mA
(
−80
C
−60
−40
Collector current I
−20
0
0 −12−2 −10−4 −8−6
Collector-emitter voltage VCE (V
Cob V
6
(pF)
ob
5
C
4
3
IC V
CE
CB
Ta = 25°C
= −
I
B
f = 1 MHz
= 0
I
E
T
= 25°C
a
0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
V
I
−100
)
V
(
CE(sat)
−10
−1
Ta = 75°C
−0.1
Collector-emitter saturation voltage V
−0.01
−1
)
25°C
−25°C
−10 −100
Collector current IC (mA
VIN I
−100
−10
)
V
(
IN
−1
CE(sat)
C
/ I
= 10
I
C
B
−1 000
240
200
FE
160
120
80
Forward current transfer ratio h
40
0
−0.1
)
O
= −
V
0.2 V
O
T
= 25°C
a
hFE I
C
V
CE
Ta = 75°C
25°C
−25°C
−1 −10 −100
Collector current IC (mA
= −10 V
)
2
1
Collector output capacitance
(Common base, input open circuited)
0
−1
−10 −100
Input voltage V
−
0.1
− 0.01
0.1
−
Collector-base voltage VCB (V)
Characteristics charts of UNR111L
IC V
−240
−200
Ta = 25°C
)
mA
(
−160
C
= −1.0 mA
I
CE
−120
−80
Collector current I
−40
0
0–1
–2 –10–4 –8–6
Collector-emitter voltage VCE (V
B
− 0.8 mA
− 0.6 mA
− 0.4 mA
− 0.2 mA
)
−100
)
V
(
CE(sat)
−10
−1
0.1
−
Collector-emitter saturation voltage V
− 0.01
−1
−1 −10 −100
Output current IO (mA
V
I
CE(sat)
Ta = 75°C
25°C
−10 −100
−25°C
C
I
C
Collector current IC (mA
)
hFE I
−25°C
C
= −10 V
V
CE
−1 000
)
/ I
= 10
B
−1 000
)
240
200
FE
160
120
80
Forward current transfer ratio h
40
0
−1
Ta = 75°C
25°C
−10 −100
Collector current IC (mA
12
SJH00001BED
UNR111x Series
Cob V
6
(pF)
ob
5
C
4
3
2
1
Collector output capacitance
(Common base, input open circuited)
0
−1
CB
f = 1 MHz
I
E
T
a
−10 −100
Collector-base voltage VCB (V)
= 0
= 25°C
−100
−10
)
V
(
IN
−1
Input voltage V
− 0.1
− 0.01
− 0.1
Output current IO (mA
VIN I
O
= − 0.2 V
V
O
T
= 25°C
a
−1 −10 −100
)
SJH00001BED
13
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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the products or technical information described in this material and controlled under the "Foreign Exchange
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Consult our sales staff in advance for information on the following applications:
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satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating,
the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be
liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as
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2003 SEP
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