Small Signal Transistor Arrays
6°
12°
45°
0 to 0.1
0.5
7.7±0.3
0.5±0.2
1
56
10
6.5±0.3
10–0.4±0.1
1.5±0.1
0.8
12° 6°
8–0.9±0.1
5.5±0.3
0.2
+0.1
–0.05
UN230
Transistor array to drive the small motor
Features
■
●
Small and lightweight
●
Low power consumption
●
Low-voltage drive
●
With 4 elements incorporated
Applications
■
●
For motor drives
●
Small motor drive circuits in general
Absolute Maximum Ratings (Ta=25±3˚C)
■
Unit: mm
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
V
Collector current I
Peak collector current I
CBO
CEO
C
CP
±10 V
±10 V
±3A
±4A
Total power dissipation PT* 0.5 W
Junction temperature T
Storage temperature T
j
stg
150 ˚C
–55 to +150 ˚C
Note: ± marks used above: +: NPN part, –: PNP part
* TC = 25˚C only when the elements are active
SO–10C Package
Internal Connection
1
Small Signal Transistor Arrays
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Collector cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
Forward voltage (DC) V
Bias resistance R
*Pulse measurement
CBO
FE
V
T
CBO
CEO
CE(sat)
ob
F
EB
(NPN) IC = 10µA, IE = 0 10
(PNP) IC = –10µA, IE = 0 –10
(NPN) IC = 1mA, IB = 0 10
(PNP) IC = –1mA, IB = 0 –10
(NPN) VCB = 6V, IE = 0 1
(PNP) VCB = –6V, IE = 0 –1
(NPN) VCE = 1V, IC = 0.5A* 200 700
(PNP) VCE = –1V, IC = – 0.5A* 200 700
(NPN) IC = 2A, IB = 50mA* 0.25
(PNP) IC = –2A, IB = –50mA* – 0.45
(NPN) VCB = 6V, IE = –50mA, f = 200MHz
(PNP) VCB = –6V, IE = 50mA, f = 200MHz
150
150
(NPN) VCB = 6V, IE = 0, f = 1MHz 50
(PNP) VCB = –6V, IE = 0, f = 1MHz 70
(NPN) IF = 1A 1.5
(PNP) IF = –1A 1.5
–30% 10 +30% kΩ
UN230
V
V
µA
V
MHz
pF
V
Characteristics charts of PNP transistor block
— Ta IC — V
P
T
0.6
)
0.5
W
(
T
0.4
0.3
0.2
0.1
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
)
–6
–5
)
A
(
–4
C
–3
–2
Collector current I
–1
CE
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Ta=25˚C
–8mA–10mAIB=–12mA
–6mA
–4mA
–2mA
V
— I
–10
)
V
(
–3
CE(sat)
–1
–0.3
–0.1
–0.03
–0.01
–0.003
CE(sat)
25˚C
C
IC/IB=40
Ta=75˚C
–25˚C
Collector to emitter saturation voltage V
–0.001
–0.01 –0.03
)
–0.1 –0.3 –1 –3 –10
Collector current IC (A
)
2