Small Signal Transistor Arrays
6°
12°
45°
0 to 0.1
0.5
7.7±0.3
0.5±0.2
1
56
10
6.5±0.3
10–0.4±0.1
1.5±0.1
0.8
12° 6°
8–0.9±0.1
5.5±0.3
0.2
+0.1
–0.05
1
2
4
3
5
7
8
6
16
15
14
13
12
11
10
9
UN227
Transistor array to drive the small motor
Features
■
●
Small and lightweight
●
Low power consumption
●
Low-voltage drive
●
With 8 elements incorporated
Applications
■
●
For motor drives
●
Small motor drive circuits in general
Absolute Maximum Ratings (Ta=25±3˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Emitter to base voltage V
Collector current I
Peak collector current I
CBO
V
CEO
EBO
C
CP
Total power dissipation PT* 0.5 W
Junction temperature T
Storage temperature T
j
stg
Note: ± marks used above: +: NPN part, –: PNP part
* TC = 25˚C only when the elements are active
±10 V
±10 V
±7V
±1.5 A
±2A
150 ˚C
–55 to +150 ˚C
Unit: mm
SO–10C Package
Internal Connection
1
Small Signal Transistor Arrays
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current I
Collector cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
Forward voltage V
*Pulse measurement
CBO
CEO
V
T
CBO
CEO
EBO
FE
CE(sat)
ob
F
(NPN) IC = 10µA, IE = 0 10
(PNP) IC = –10µA, IE = 0 –10
(NPN) IC = 1mA, IB = 0 10
(PNP) IC = –1mA, IB = 0 –10
(NPN) IE = 10µA, IC = 0 7
(PNP) IE = –10µA, IC = 0 –7
(NPN) VCB = 7V, IE = 0 1
(PNP) VCB = –7V, IE = 0 –1
(NPN) VCE = 10V, IB = 0 2
(PNP) VCE = –10V, IB = 0 –2
(NPN) VCE = 1V, IC = 400mA* 200 700
(PNP) VCE = –1V, IC = –400mA* 200 700
(NPN) IC = 1A, IB = 25mA* 0.25
(PNP) IC = –1A, IB = –25mA* – 0.35
(NPN) VCB = 6V, IE = –50mA, f = 200MHz
(PNP) VCB = –6V, IE = 50mA, f = 200MHz
120
120
(NPN) VCB = 6V, IE = 0, f = 1MHz 25
(NPN) VCB = –6V, IE = 0, f = 1MHz 35
(NPN) IF = 0.5A 1.3
(PNP) IF = – 0.5A –1.3
UN227
V
V
V
µA
µA
V
MHz
pF
V
2