ON Semiconductor NTLJD3119C Technical data

NTLJD3119C

Power MOSFET

20 V/-20 V, 4.6 A/-4.1 A, mCoolt
Complementary, 2x2 mm, WDFN Package

Features

•Complementary N-Channel and P-Channel MOSFET

•WDFN Package with Exposed Drain Pad for Excellent Thermal

Conduction

•Footprint Same as SC-88 Package

•Leading Edge Trench Technology for Low On Resistance

•1.8 V Gate Threshold Voltage

•Low Profile (< 0.8 mm) for Easy Fit in Thin Environments

•This is a Pb-Free Device

Applications

•Synchronous DC-DC Conversion Circuits

•Load/Power Management of Portable Devices like PDA's, Cellular

Phones and Hard Drives

•Color Display and Camera Flash Regulators

MAXIMUM RATINGS (T

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

N-Channel

Continuous Drain
Current (Note 1)

P-Channel

Continuous Drain
Current (Note 1)

Power Dissipation
(Note 1)

N-Channel

Continuous Drain
Current (Note 2)

P-Channel

Continuous Drain
Current (Note 2)

Power Dissipation
(Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).

2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm

2

, 2 oz Cu.

= 25°C unless otherwise noted)

J

Symbol Value Unit

N-Ch
P-Ch -20
N-Ch
P-Ch

T

Steady

State

t ≤ 5 s T

Steady

State

t ≤ 5 s T

Steady

State

t ≤ 5 s 2.3

Steady

State

Steady

State

Steady

State

N-Ch

P-Ch -20

= 25°C

A

T

= 85°C 2.8

A

= 25°C 4.6

A

T

= 25°C

A

T

= 85°C -2.4

A

= 25°C -4.1

A

T

= 25°C

A

T

= 25°C

A

T

= 85°C 1.9

A

T

= 25°C

A

T

= 85°C -1.6

A

T

= 25°C

A

t

= 10 ms

p

V

V

I

DSS

GS

I

D

I

D

P

I

D

I

D

P

DM

T

D

D

STG

L

±8.0 V

-3.3

-2.3

0.71 W

-55 to
150

260 °C

20

3.8

1.5

2.6

18

V

A

A

W

A

A

A

°C

http://onsemi.com

(BR)DSS

N-Channel

20 V

P-Channel

-20 V

D2

Pin 1

MAX

DS(on)

65 mW @ 4.5 V

85 mW @ 2.5 V

120 mW @ 1.8 V

100 mW @ -4.5 V

135 mW @ -2.5 V

200 mW @ -1.8 V

D1

WDFN6

CASE 506AN

JD = Specific Device Code
M = Date Code
G = Pb-Free Package
(Note: Microdot may be in either location)

ID MAXV

3.8 A

2.0 A

1.7 A

-4.1 A

-2.0 A

-1.6 A

MARKING
DIAGRAM

1

JDMG

2

G

3

R

PIN CONNECTIONS

S1

G1

D2

1

D1

2

D2

3

(Top View)

D1

6

G2

5

4

S2

ORDERING INFORMATION

Device Package Shipping

NTLJD3119CTAG WDFN6

(Pb-Free)

NTLJD3119CTBG WDFN6

(Pb-Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

3000/Tape & Reel

3000/Tape & Reel

†

6
5
4

© Semiconductor Components Industries, LLC, 2007

August, 2007 - Rev. 2

1 Publication Order Number:

NTLJD3119C/D

NTLJD3119C

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

SINGLE OPERATION (SELF-HEATED)

Junction-to-Ambient – Steady State (Note 3)

Junction-to-Ambient – Steady State Min Pad (Note 4)

Junction-to-Ambient – t ≤ 5 s (Note 3)

DUAL OPERATION (EQUALLY HEATED)

Junction-to-Ambient – Steady State (Note 3)

Junction-to-Ambient – Steady State Min Pad (Note 4)

Junction-to-Ambient – t ≤ 5 s (Note 3)

3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm

R

R

R

R

R

R

2

, 2 oz Cu).

q

JA

q

JA

q

JA

q

JA

q

JA

q

JA

83

177

54

58

133

40

°C/W

°C/W

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NTLJD3119C

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise noted)

J

Symbol N/P Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

Drain-to-Source Breakdown Voltage
Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Gate Threshold Temperature
Coefficient

Drain-to-Source On Resistance R

Forward Transconductance g

V

GS(TH)

V

GS(TH)/TJ

DS(on)

FS

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

N

P

VGS = 0 V

ID = 250 mA

ID = -250 mA

20

-20

N 10.4

V

mV/°C

P 9.95

N VGS = 0 V, VDS = 16 V

P VGS = 0 V, VDS = -16 V -1.0

TJ = 25 °C

N VGS = 0 V, VDS = 16 V

P VGS = 0 V, VDS = -16 V -10

TJ = 85 °C

N VDS = 0 V, VGS = ±8.0 V ±100

1.0 mA

10

nA

P VDS = 0 V, VGS = ±8.0 V ±100

N

VGS = V

P

DS

ID = 250 mA

ID = -250 mA

0.4 0.7 1.0

-0.4 -0.7 -1.0

N -3.0

V

mV/°C

P 2.44

N VGS = 4.5 V , ID = 3.8 A 37 65 mW

P VGS = -4.5 V , ID = -4.1 A 75 100

N VGS = 2.5 V , ID = 2.0 A 46 85

P VGS = -2.5 V, ID = -2.0 A 101 135

N VGS = 1.8 V , ID = 1.7 A 65 120

P VGS = -1.8 V, ID = -1.6 A 150 200

N VDS = 10 V, ID = 1.7 A 4.2

S

P VDS = -5.0 V , ID = -2.0 A 3.1

N

VDS = 10 V 271

pF

P VDS = -10 V 531

N VDS = 10 V 72

f = 1.0 MHz, VGS = 0 V

P VDS = -10 V 91

N VDS = 10 V 43

P VDS = -10 V 56

N VGS = 4.5 V, VDS = 10 V, ID = 3.8 A 3.7

nC

P VGS = -4.5 V, VDS = -10 V, ID = -2.0 A 5.5

N VGS = 4.5 V, VDS = 10 V, ID = 3.8 A 0.3

P VGS = -4.5 V, VDS = -10 V, ID = -2.0 A 0.7

N VGS = 4.5 V, VDS = 10 V, ID = 3.8 A 0.6

P VGS = -4.5 V, VDS = -10 V, ID = -2.0 A 1.0

N VGS = 4.5 V, VDS = 10 V, ID = 3.8 A 1.0

P VGS = -4.5 V, VDS = -10 V, ID = -.02 A 1.4

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3

NTLJD3119C

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Parameter UnitMaxTypMinTest ConditionsN/PSymbol

SWITCHING CHARACTERISTICS (Note 6)

Turn-On Delay Time

Rise Time t

Turn-Off Delay Time t

Fall Time t

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

d(ON)

r

d(OFF)

f

N

P

VGS = 4.5 V, VDD = 16 V,

= 1.0 A, RG = 2.0 W

I

D

VGS = -4.5 V, VDD = -10 V,

= -2.0 A, RG = 2.0 W

I

D

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

V

SD

N

VGS = 0 V, TJ = 25 °C

P IS = -1.0 A -0.75 -1.0

N

VGS = 0 V, TJ = 125 °C

P IS = -1.0 A -0.64

Reverse Recovery Time t

RR

N

P IS = -1.0 A 16.2

Charge Time t

Discharge Time t

a

b

N IS = 1.0 A 6.0

P IS = -1.0 A 10.6

N IS = 1.0 A 4.2

VGS = 0 V,

/ dt = 100 A/ms

dI

S

P IS = -1.0 A 5.6

Reverse Recovery Charge Q

RR

N IS = 1.0 A 3.0

P

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

3.8

4.7

11.1

5.8

5.2

13.2

13.7

19.1

IS = 1.0 A 0.69 1.0

IS = 1.0 A 0.52

IS = 1.0 A 10.2

IS = -1.0 A

5.7

ns

V

ns

nC

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4

NTLJD3119C

TYPICAL PERFORMANCE CURVES - N-CHANNEL (T

10

8

6

4

2

, DRAIN CURRENT (AMPS)

D

I

0

0 0.5 21

0.1

0.09

0.08

VGS = 4 V to 2.2 V

, DRAIN-TO-SOURCE VOLTAGE (V)

V

DS

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

TJ = 25°C

1.5 2.5 3.5

TJ = 25°C
I

= 3.8 A

D

2.0 V

1.8 V

1.6 V

1.4 V

1.2 V

10

VDS ≥ 10 V

8

6

4

TJ = 100°C

, DRAIN CURRENT (AMPS)

2

D

I

0

4

13

0.14
TJ = 25°C

0.12

0.1

= 25°C unless otherwise noted)

J

TJ = 25°C

TJ = -55°C

1.5

, GATE-TO-SOURCE VOLTAGE (V)

V

GS

2

VGS = 1.8 V

2.5

0.07

0.06

0.05

0.04

, DRAIN-TO-SOURCE RESISTANCE (W)

0.03

DS(on)

R

1.0

VGS, GATE-TO-SOURCE VOLTAGE (V)

4.03.0

Figure 3. On-Resistance versus Drain Current

1.5
ID = 3.8 A

1.4

V

= 4.5 V

GS

1.3

1.2

1.1

1.0

(NORMALIZED)

0.9

0.8

, DRAIN-TO-SOURCE RESISTANCE

0.7

DS(on)

-50 50250-25 75 125100

R

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On-Resistance Variation with

Temperature

0.08

0.06

VGS = 2.5 V

0.04
VGS = 4.5 V

0.02

, DRAIN-TO-SOURCE RESISTANCE (W)

0

DS(on)

R

1

5.02.0

6.0

32

410

56789

ID, DRAIN CURRENT (A)

Figure 4. On-Resistance versus Drain Current

and Gate Voltage

10000

1000

, LEAKAGE (nA)

DSS

I

150

100

VGS = 0 V

212104

TJ = 150°C

TJ = 100°C

6 8 14 16 18

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

20

Figure 6. Drain-to-Source Leakage Current

versus Voltage

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5

NTLJD3119C

TYPICAL PERFORMANCE CURVES - N-CHANNEL (T

600

500

400

300

200

C, CAPACITANCE (pF)

100

0

10

GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)

100

VDS = 0 V

C

iss

C

rss

5 5 15 20

VGS = 0 V

C

oss

010

V

GS

V

DS

Figure 7. Capacitance Variation

VDD = 16 V
I

= 1.0 A

D

= 4.5 V

V

GS

t

d(off)

TJ = 25°C

= 25°C unless otherwise noted)

J

5

QT

4

3

V

DS

Q

GS

2

Q

GD

V

GS

1

, GATE-TO-SOURCE VOLTAGE (VOLTS)

GS

V

0

0

123

ID = 3.8 A
T

QG, TOTAL GATE CHARGE (nC)

Figure 8. Gate-To-Source and Drain-To-Source

Voltage versus Total Charge

2

VGS = 0 V

TJ = 25°C

1.5

= 25°C

J

V

20

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

16

12

8

4

0

4

t

f

10

t, TIME (ns)

1

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

t

r

t

d(on)

1

0.5

, SOURCE CURRENT (AMPS)

S

I

0

0.4

0.6

, SOURCE-TO-DRAIN VOLTAGE (V)

V

SD

0.80.70.5

Figure 10. Diode Forward Voltage versus Current

0.9

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6

NTLJD3119C

TYPICAL PERFORMANCE CURVES - P-CHANNEL (T

5

4.5

4

3.5

3

2.5

2

1.5

, DRAIN CURRENT (AMPS)

1

D

-I

0.5

0

0 4.521

-V

, DRAIN-TO-SOURCE VOLTAGE (V)

DS

Figure 11. On-Region Characteristics Figure 12. Transfer Characteristics

0.1

VGS = -4.5 V

0.09

0.08

0.07

VGS = -1.9 V to -6 V

3

2.51.50.5

TJ = 100°C

TJ = 25°C

TJ = 25°C

3.5

-1.8 V

-1.7 V

-1.6 V

-1.5 V

-1.4 V

-1.3 V

-1.2 V

4

= 25°C unless otherwise noted)

J

5

VDS ≥ 10 V

4

3

2

TJ = 25°C

, DRAIN CURRENT (AMPS)

1

D

-I
TJ = 125°C

0

0

-V

1

, GATE-TO-SOURCE VOLTAGE (V)

GS

0.15
TJ = 25°C

0.1

TJ = -55°C

1.5

VGS = -2.5 V

VGS = -4.5 V

20.5

2.5

3

0.06

0.05

, DRAIN-TO-SOURCE RESISTANCE (W)

0.04

DS(on)

1.0 2.01.5

R

TJ = -55°C

-ID, DRAIN CURRENT (A)

Figure 13. On-Resistance versus Drain

Current

1.6
ID = -2.2 A

V

= -4.5 V

GS

1.4

1.2

1.0

(NORMALIZED)

0.8

, DRAIN-TO-SOURCE RESISTANCE

0.6

DS(on)

-50 50250-25 75 125100

R

TJ, JUNCTION TEMPERATURE (°C)

Figure 15. On-Resistance Variation with

Temperature

0.05

, DRAIN-TO-SOURCE RESISTANCE (W)

2.5 3

12

R

0

DS(on)

-ID, DRAIN CURRENT (A)

Figure 14. On-Resistance versus Drain

Current and Gate Voltage

10000

1000

, LEAKAGE (nA)

DSS

-I

150

100

10

VGS = 0 V

TJ = 150°C

TJ = 100°C

212104

6 8 14 16 18

-VDS, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 16. Drain-to-Source Leakage Current

versus Voltage

4

5

20

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7

NTLJD3119C

TYPICAL PERFORMANCE CURVES - P-CHANNEL (T

1200

VDS = 0 V

1000

C

iss

800

600

400

C

rss

C, CAPACITANCE (pF)

200

0

5 5 15 20

GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)

1000

VDD = -15 V
I

= -2.2 A

D

V

GS

100

VGS = 0 V

C

oss

010

V

GS

V

DS

Figure 17. Capacitance Variation

= -4.5 V

TJ = 25°C

= 25°C unless otherwise noted)

J

5

QT

4

, GATE-TO-SOURCE VOLTAGE (VOLTS)

GS

-V

3

V

DS

Q

GS

2

Q

GD

1

0

0

V

GS

43

ID = -2.2 A
T

= 25°C

J

5

QG, TOTAL GATE CHARGE (nC)

Figure 18. Gate-To-Source and Drain-To-Source

Voltage versus Total Charge

3

VGS = 0 V

2.5

2

-V

20

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

16

12

8

4

0

621

t

f

t

t, TIME (ns)

10

t

d(off)

t

d(on)

r

1

1 10 100

RG, GATE RESISTANCE (W)

Figure 19. Resistive Switching Time

Variation versus Gate Resistance

100

TC = 25°C
T

= 150°C

J

SINGLE PULSE

10

1

*See Note 2 on Page 1

0.1

, DRAIN CURRENT (AMPS)

D

-I

0.01

0.1 1 100

-V

DS

Figure 21. Maximum Rated Forward Biased

1.5

1

0.5

, SOURCE CURRENT (AMPS)

s

-I
0

0

0.1 0.7 0.90.50.3

-V

SD

Figure 20. Diode Forward Voltage versus Current

10 ms

100 ms

1 ms

10 ms

R

LIMIT

DS(on)

THERMAL LIMIT

dc

PACKAGE LIMIT

10

, DRAIN-TO-SOURCE VOLTAGE (V)

Safe Operating Area

TJ = 150°C

0.6

TJ = 25°C

0.80.40.2

, SOURCE-TO-DRAIN VOLTAGE (V)

1.0

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8

NTLJD3119C

1000

100

0.1

EFFECTIVE TRANSIENT THERMAL RESISTANCE

10

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

TYPICAL PERFORMANCE CURVES (T

P

SINGLE PULSE

t, TIME (s)

Figure 22. Thermal Response

= 25°C unless otherwise noted)

J

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

10.010.00001

*See Note 2 on Page 1

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

- TA = P

J(pk)

2

(pk)

1

R

(t)

q

JA

100 1000100.10.0010.00010.000001

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9

NTLJD3119C

PACKAGE DIMENSIONS

WDFN6, 2x2

CASE 506AN-01

ISSUE B

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN

0.15 AND 0.20mm FROM TERMINAL.

4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.

MILLIMETERS

DIMAMIN MAX

0.70 0.80

A1 0.00 0.05
A3 0.20 REF

b 0.25 0.35

D 2.00 BSC

D2 0.57 0.77

2.00 BSC

E

E2

0.90 1.10

e

0.65 BSC

0.25 REF

K

L

0.20 0.30

J

0.15 REF

2X

2X

PIN ONE

REFERENCE

0.10 C

0.10 C

0.10 C

D

A

B

E

A3

A

6X

0.08 C

6X

D2

L

1

A1

SEATING

C

D2

4X

3

e

PLANE

6X

0.43

SOLDERMASK DEFINED
MOUNTING FOOTPRINT*

2.30

6X

0.35

1

E2

2X

0.65

PITCH

6X

K

6

J6X

BOTTOM VIEW

4

b

6X

A0.10 C

B

0.05 C

NOTE 3

0.250.25

2X

0.72

1.05

DIMENSIONS: MILLIMETERS

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTLJD3119C/D