ON Semiconductor NTLJD3119C Technical data

NTLJD3119C

Power MOSFET

20 V/-20 V, 4.6 A/-4.1 A, mCoolt Complementary, 2x2 mm, WDFN Package

Features

•Complementary N-Channel and P-Channel MOSFET

•WDFN Package with Exposed Drain Pad for Excellent Thermal

Conduction

•Footprint Same as SC-88 Package

•Leading Edge Trench Technology for Low On Resistance

•1.8 V Gate Threshold Voltage

•Low Profile (< 0.8 mm) for Easy Fit in Thin Environments

•This is a Pb-Free Device

Applications

•Synchronous DC-DC Conversion Circuits

•Load/Power Management of Portable Devices like PDA's, Cellular

Phones and Hard Drives

•Color Display and Camera Flash Regulators

MAXIMUM RATINGS (T

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

N-Channel

Continuous Drain Current (Note 1)

P-Channel

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

N-Channel

Continuous Drain Current (Note 2)

P-Channel

Continuous Drain Current (Note 2)

Power Dissipation (Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

2. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm

2

, 2 oz Cu.

= 25°C unless otherwise noted)

J

Symbol Value Unit

N-Ch P-Ch -20 N-Ch P-Ch

T

Steady

State

t ≤ 5 s T

Steady

State

t ≤ 5 s T

Steady

State

t ≤ 5 s 2.3

Steady

State

Steady

State

Steady

State

N-Ch

P-Ch -20

= 25°C

A

T

= 85°C 2.8

A

= 25°C 4.6

A

T

= 25°C

A

T

= 85°C -2.4

A

= 25°C -4.1

A

T

= 25°C

A

T

= 25°C

A

T

= 85°C 1.9

A

T

= 25°C

A

T

= 85°C -1.6

A

T

= 25°C

A

t

= 10 ms

p

V

I

DSS

GS

I

D

I

D

P

I

D

I

D

P

DM

T

D

STG

L

±8.0 V

-3.3

-2.3

0.71 W

-55 to 150

260 °C

20

3.8

1.5

2.6

18

V

A

W

A

°C

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(BR)DSS

N-Channel

20 V

P-Channel

-20 V

D2

Pin 1

MAX

DS(on)

65 mW @ 4.5 V

85 mW @ 2.5 V

120 mW @ 1.8 V

100 mW @ -4.5 V

135 mW @ -2.5 V

200 mW @ -1.8 V

D1

WDFN6

CASE 506AN

JD = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location)

ID MAXV

3.8 A

2.0 A

1.7 A

-4.1 A

-2.0 A

-1.6 A

MARKING DIAGRAM

1

JDMG

2

G

3

R

PIN CONNECTIONS

S1

G1

D2

1

D1

2

D2

3

(Top View)

D1

6

G2

5

4

S2

ORDERING INFORMATION

Device Package Shipping

NTLJD3119CTAG WDFN6

(Pb-Free)

NTLJD3119CTBG WDFN6

(Pb-Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

3000/Tape & Reel

†

6 5 4

© Semiconductor Components Industries, LLC, 2007

August, 2007 - Rev. 2

1 Publication Order Number:

NTLJD3119C/D

NTLJD3119C

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

SINGLE OPERATION (SELF-HEATED)

Junction-to-Ambient – Steady State (Note 3)

Junction-to-Ambient – Steady State Min Pad (Note 4)

Junction-to-Ambient – t ≤ 5 s (Note 3)

DUAL OPERATION (EQUALLY HEATED)

Junction-to-Ambient – Steady State (Note 3)

Junction-to-Ambient – Steady State Min Pad (Note 4)

Junction-to-Ambient – t ≤ 5 s (Note 3)

3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm

R

2

, 2 oz Cu).

q

JA

q

JA

q

JA

q

JA

q

JA

q

JA

83

177

54

58

133

40

°C/W

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2

NTLJD3119C

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise noted)

J

Symbol N/P Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

Drain-to-Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Gate Threshold Temperature Coefficient

Drain-to-Source On Resistance R

Forward Transconductance g

V

GS(TH)

V

GS(TH)/TJ

DS(on)

FS

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

N

P

VGS = 0 V

ID = 250 mA

ID = -250 mA

20

-20

N 10.4

V

mV/°C

P 9.95

N VGS = 0 V, VDS = 16 V

P VGS = 0 V, VDS = -16 V -1.0

TJ = 25 °C

N VGS = 0 V, VDS = 16 V

P VGS = 0 V, VDS = -16 V -10

TJ = 85 °C

N VDS = 0 V, VGS = ±8.0 V ±100

1.0 mA

10

nA

P VDS = 0 V, VGS = ±8.0 V ±100

N

VGS = V

P

DS

ID = 250 mA

ID = -250 mA

0.4 0.7 1.0

-0.4 -0.7 -1.0

N -3.0

V

mV/°C

P 2.44

N VGS = 4.5 V , ID = 3.8 A 37 65 mW

P VGS = -4.5 V , ID = -4.1 A 75 100

N VGS = 2.5 V , ID = 2.0 A 46 85

P VGS = -2.5 V, ID = -2.0 A 101 135

N VGS = 1.8 V , ID = 1.7 A 65 120

P VGS = -1.8 V, ID = -1.6 A 150 200

N VDS = 10 V, ID = 1.7 A 4.2

S

P VDS = -5.0 V , ID = -2.0 A 3.1

N

VDS = 10 V 271

pF

P VDS = -10 V 531

N VDS = 10 V 72

f = 1.0 MHz, VGS = 0 V

P VDS = -10 V 91

N VDS = 10 V 43

P VDS = -10 V 56

N VGS = 4.5 V, VDS = 10 V, ID = 3.8 A 3.7

nC

P VGS = -4.5 V, VDS = -10 V, ID = -2.0 A 5.5

N VGS = 4.5 V, VDS = 10 V, ID = 3.8 A 0.3

P VGS = -4.5 V, VDS = -10 V, ID = -2.0 A 0.7

N VGS = 4.5 V, VDS = 10 V, ID = 3.8 A 0.6

P VGS = -4.5 V, VDS = -10 V, ID = -2.0 A 1.0

N VGS = 4.5 V, VDS = 10 V, ID = 3.8 A 1.0

P VGS = -4.5 V, VDS = -10 V, ID = -.02 A 1.4

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