ON Semiconductor NTF3446 Technical data
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NTGS3446
Power MOSFET
5.1 Amps, 20 Volts
N−Channel TSOP−6
Features
• Ultra Low R
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• I
Specified at Elevated Temperature
DSS
• Pb−Free Package is Available
Applications
• Power Management in portable and battery−powered products, i.e.
computers, printers, PCMCIA cards, cellular and cordless
• Lithium Ion Battery Applications
• Notebook PC
MAXIMUM RATINGS (T
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp t 10 ms)
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp t 10 ms)
Thermal Resistance
Junction−to−Ambient (Note 3)
Total Power Dissipation @ TA = 25°C
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp t 10 ms)
Source Current (Body Diode) I
Operating and Storage Temperature Range TJ, T
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum FR−4 or G−10PCB, operating to steady state.
2. Mounted onto a 2” square FR−4 board (1” sq. 2 oz. cu. 0.06” thick
single−sided), operating to steady state.
3. Mounted onto a 2” square FR−4 board (1” sq. 2 oz. cu. 0.06” thick
single−sided), t < 5.0 seconds.
DS(on)
= 25°C unless otherwise noted)
C
Rating Symbol Value Unit
stg
20 V
±12 V
244
0.5
2.5
10
128
1.0
3.6
14
62.5
2.0
5.1
20
5.1 A
−55 to
150
260 °C
R
R
R
DSS
P
I
I
DM
P
I
I
DM
P
I
I
DM
T
q
q
q
GS
JA
d
D
JA
d
D
JA
d
D
S
L
°C/W
W
A
A
°C/W
W
A
A
°C/W
W
A
A
°C
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(BR)DSS
20 V
TYP
DS(on)
36 mW @ 4.5 V
ID MAXV
5.1 A
R
N−Channel
1256
Drain
3
Gate
Source
4
MARKING
DIAGRAM
TSOP−6
CASE 318G
1
STYLE 1
446 = Device Code
W = Work Week
W
446
1
PIN ASSIGNMENT
Drain
6
1
Drain
5
2
Drain
4
3
Gate
Source
Drain
ORDERING INFORMATION
Device Package Shipping
NTGS3446T1 TSOP−6 3000/Tape & Reel
NTGS3446T1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
TSOP−6
(Pb−Free)
3000/Tape & Reel
†
Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 4
1 Publication Order Number:
NTGS3446/D
NTGS3446
)
f = 1.0 MHz)
(V
DD
= 10 Vdc, ID = 1.0 Adc
)
VGS = 4.5 Vdc)
diS/dt 100 A/ms)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic Symbol Min Ty p Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Collector Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 85°C)
Gate−Body Leakage Current (VGS = ± 12 Vdc, VDS = 0) I
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
ID = 0.25 mA, VDS = V
Temperature Coefficient (Negative)
GS
Static Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 5.1 Adc)
(VGS = 2.5 Vdc, ID = 4.4 Adc)
Forward Transconductance (VDS = 10 Vdc, ID = 5.1 Adc) g
DYNAMIC CHARACTERISTICS
Input Capacitance C
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time t
Rise Time
Turn−Off Delay Time
(V
= 10 Vdc, ID = 1.0 Adc,
DD
VGS = 4.5 Vdc, RG = 6.0 W)
,
Fall Time t
Gate Charge
(VDS = 10 Vdc, ID = 5.1 Adc,
V
= 4.5 Vdc
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 4)
(IS = 1.7 Adc, VGS = 0 Vdc)
(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 85°C)
Reverse Recovery Time
(IS = 1.7 Adc, VGS = 0 Vdc,
diS/dt = 100 A/ms)
Reverse Recovery Stored
Charge
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
V
(BR)DSS
I
DSS
GSS(f)
I
GSS(r)
V
GS(th)
R
DS(on)
C
C
d(on)
t
d(off)
Q
Q
Q
V
t
t
t
Q
FS
iss
oss
rss
t
r
f
gs
gd
SD
rr
a
b
RR
20
−
22
−
−
−
mV/°C
mAdc
Vdc
−
−
−
−
−
−
−
−
1.0
25
100
−100
nAdc
Vdc
0.6
−
0.85
−2.5
1.2
−
mV/°C
mW
−
−
36
44
45
55
− 12 − mhos
− 510 750
pF
− 200 350
− 60 100
− 9.0 16
ns
− 12 20
− 35 60
− 20 35
T
− 8.0 15
nC
− 2.0 −
− 2.0 −
Vdc
−
−
− 20 −
0.74
0.66
1.1
−
ns
− 11 −
− 9.0 −
− 0.01 −
mC
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