ON Semiconductor NTF3446 Technical data

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NTGS3446

Power MOSFET

5.1 Amps, 20 Volts

N−Channel TSOP−6

Features

• Ultra Low R

• Higher Efficiency Extending Battery Life

• Logic Level Gate Drive

• Diode Exhibits High Speed, Soft Recovery

• Avalanche Energy Specified

• I

Specified at Elevated Temperature

DSS

• Pb−Free Package is Available

Applications

• Power Management in portable and battery−powered products, i.e.

computers, printers, PCMCIA cards, cellular and cordless

• Lithium Ion Battery Applications

• Notebook PC

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Thermal Resistance

Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C

Drain Current

− Continuous @ TA = 25°C

− Pulsed Drain Current (tp t 10 ms)

Thermal Resistance

Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C

Drain Current

− Continuous @ TA = 25°C

− Pulsed Drain Current (tp t 10 ms)

Thermal Resistance

Junction−to−Ambient (Note 3)
Total Power Dissipation @ TA = 25°C

Drain Current

− Continuous @ TA = 25°C

− Pulsed Drain Current (tp t 10 ms)

Source Current (Body Diode) I

Operating and Storage Temperature Range TJ, T

Maximum Lead Temperature for Soldering
Purposes for 10 seconds

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. Minimum FR−4 or G−10PCB, operating to steady state.

2. Mounted onto a 2” square FR−4 board (1” sq. 2 oz. cu. 0.06” thick
single−sided), operating to steady state.

3. Mounted onto a 2” square FR−4 board (1” sq. 2 oz. cu. 0.06” thick
single−sided), t < 5.0 seconds.

DS(on)

= 25°C unless otherwise noted)

C

Rating Symbol Value Unit

stg

20 V

±12 V

244

0.5

2.5
10

128

1.0

3.6
14

62.5

2.0

5.1
20

5.1 A

−55 to
150

260 °C

R

R

R

DSS

P

I

I

DM

P

I

I

DM

P

I

I

DM

T

q

q

q

GS

JA
d

D

JA
d

D

JA
d

D

S

L

°C/W

W

A
A

°C/W

W

A
A

°C/W

W

A
A

°C

http://onsemi.com

(BR)DSS

20 V

TYP

DS(on)

36 mW @ 4.5 V

ID MAXV

5.1 A

R

N−Channel

1256

Drain

3

Gate

Source

4

MARKING
DIAGRAM

TSOP−6

CASE 318G

1

STYLE 1

446 = Device Code
W = Work Week

W

446

1

PIN ASSIGNMENT

Drain

6

1

Drain

5

2

Drain

4

3
Gate

Source

Drain

ORDERING INFORMATION

Device Package Shipping

NTGS3446T1 TSOP−6 3000/Tape & Reel

NTGS3446T1G

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

TSOP−6

(Pb−Free)

3000/Tape & Reel

†

 Semiconductor Components Industries, LLC, 2005

March, 2005 − Rev. 4

1 Publication Order Number:

NTGS3446/D

NTGS3446

)

f = 1.0 MHz)

(V

DD

= 10 Vdc, ID = 1.0 Adc

)

VGS = 4.5 Vdc)

diS/dt 100 A/ms)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic Symbol Min Ty p Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)

Zero Gate Voltage Collector Current

(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 85°C)

Gate−Body Leakage Current (VGS = ± 12 Vdc, VDS = 0) I

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

ID = 0.25 mA, VDS = V

Temperature Coefficient (Negative)

GS

Static Drain−to−Source On−Resistance

(VGS = 4.5 Vdc, ID = 5.1 Adc)
(VGS = 2.5 Vdc, ID = 4.4 Adc)

Forward Transconductance (VDS = 10 Vdc, ID = 5.1 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance C

Output Capacitance

(VDS = 10 Vdc, VGS = 0 Vdc,

f = 1.0 MHz

Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time t

Rise Time

Turn−Off Delay Time

(V

= 10 Vdc, ID = 1.0 Adc,

DD

VGS = 4.5 Vdc, RG = 6.0 W)

,

Fall Time t

Gate Charge

(VDS = 10 Vdc, ID = 5.1 Adc,

V

= 4.5 Vdc

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (Note 4)

(IS = 1.7 Adc, VGS = 0 Vdc)

(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 85°C)

Reverse Recovery Time

(IS = 1.7 Adc, VGS = 0 Vdc,

diS/dt = 100 A/ms)

Reverse Recovery Stored
Charge

4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

5. Switching characteristics are independent of operating junction temperature.

V

(BR)DSS

I

DSS

GSS(f)

I

GSS(r)

V

GS(th)

R

DS(on)

C

C

d(on)

t

d(off)

Q

Q

Q

V

t

t

t

Q

FS

iss

oss

rss

t

r

f

gs

gd

SD

rr

a

b

RR

20

−

22

−

−

−

mV/°C

mAdc

Vdc

−

−

−

−

−

−

−

−

1.0
25

100

−100

nAdc

Vdc

0.6

−

0.85

−2.5

1.2

−

mV/°C

mW

−

−

36
44

45
55

− 12 − mhos

− 510 750

pF

− 200 350

− 60 100

− 9.0 16

ns

− 12 20

− 35 60

− 20 35

T

− 8.0 15

nC

− 2.0 −

− 2.0 −

Vdc

−

−

− 20 −

0.74

0.66

1.1

−

ns

− 11 −

− 9.0 −

− 0.01 −

mC

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2

NTGS3446

1.8
ID = 5.1 A
VGS = 4.5 V

1.6

1.4

1.2

1

(NORMALIZED)

0.8

0.6

, DRAIN−TO−SOURCE RESISTANCE

0.4

DS(on)

−50

R

25

0−25

TJ, JUNCTION TEMPERATURE (°C)

50 150

75 100 125

Figure 1. On−Resistance Variation with

Temperature

100

t

d(off)

t

f

t

r

10

t

t, TIME (ns)

1

1 10 100

RG, GATE RESISTANCE (W)

d(on)

VDD = 10 V
ID = 1.0 A
VGS = 4.5 V

Figure 2. Resistive Switching Time Variation

vs. Gate Resistance

http://onsemi.com

3

0.05 (0.002)

NTGS3446

PACKAGE DIMENSIONS

TSOP−6

CASE 318G−02

ISSUE N

NOTES:

1. DIMENSIONING AND TOLERANCING PER

A

L

456

S

1

23

B

D

G

M

C

H

K

J

SOLDERING FOOTPRINT*

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.

4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.

DIM MIN MAX MIN MAX

A 0.1142 0.12202.90 3.10
B 0.0512 0.06691.30 1.70
C 0.0354 0.04330.90 1.10
D 0.0098 0.01970.25 0.50
G 0.0335 0.04130.85 1.05
H 0.0005 0.00400.013 0.100

J 0.0040 0.01020.10 0.26
K 0.0079 0.02360.20 0.60
L 0.0493 0.06101.25 1.55
M 0 10 0 10

____

S 0.0985 0.11812.50 3.00

STYLE 1:

PIN 1. DRAIN

2. DRAIN

3. GATE

4. SOURCE

5. DRAIN

6. DRAIN

INCHESMILLIMETERS

2.4

0.094

0.95

0.037

1.9

0.075

0.95

0.037

0.7

0.028

1.0

0.039

SCALE 10:1

ǒ

inches

mm

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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NTGS3446/D