ON Semiconductor NTF3055-100 Technical data

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NTF3055−100

Preferred Device

Power MOSFET

3.0 Amps, 60 Volts

N−Channel SOT−223

Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.

Features

• Pb−Free Packages are Available

Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Drain−to−Gate Voltage (RGS = 10 MW)

Gate−to−Source Voltage

− Continuous

− Non−repetitive (t

Drain Current

− Continuous @ T

− Continuous @ TA = 100°C

− Single Pulse (t

Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ T

Derate above 25°C

Operating and Storage Temperature Range TJ, T

Single Pulse Drain−to−Source Avalanche

Energy − Starting T
(VDD = 25 Vdc, VGS = 10 Vdc,
IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc)

Thermal Resistance

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.

1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.

(Cu. Area 1.127 sq in).

2. When surface mounted to an FR4 board using minimum recommended pad

size, 2−2.4 oz. (Cu. Area 0.272 sq in).

= 25°C unless otherwise noted)

C

Rating

≤ 10 ms)

p

= 25°C

A

≤ 10 ms)

p

= 25°C (Note 2)

A

= 25°C

J

Symbol Value Unit

stg

60 Vdc

60 Vdc

± 20
± 30

3.0

1.4

9.0

2.1

1.3

0.014

−55

to 175

74 mJ

72.3
114

260 °C

Vdc
Vpk

Adc

Apk

W
W

W/°C

°C

°C/W

V

V

E

R
R

DSS

DGR

GS

I
I

I

DM

P

AS

q
q

T

D
D

D

JA
JA

L

http://onsemi.com

3.0 A, 60 V

4

= 110 mW

N−Channel

D

S

MARKING
DIAGRAM

& PIN

ASSIGNMENT

Drain

AWW

3055 G

1

Gate2Drain3Source

SOT−223

(Pb−Free)

(Pb−Free)

1000/Tape & Reel

4000/Tape & Reel

4

G

†

R

DS(on)

G

1

2

3

SOT−223

CASE 318E

STYLE 3

A = Assembly Location
WW = Work Week
3055 = Specific Device Code
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

NTF3055−100T1 SOT−223 1000/Tape & Reel

NTF3055−100T1G

NTF3055−100T3 SOT−223 4000/Tape & Reel

NTF3055−100T3G SOT−223

NTF3055−100T3LF SOT−223 4000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

Preferred devices are recommended choices for future use
and best overall value.

© Semiconductor Components Industries, LLC, 2006

February, 2006 − Rev. 3

1

Publication Order Number:

NTF3055−100/D

NTF3055−100

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(Note 3)

(VGS = 0 Vdc, ID = 250 mAdc)

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

(V

= 60 Vdc, VGS = 0 Vdc)

DS

= 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

(V

DS

Gate−Body Leakage Current

(V

= ± 20 Vdc, VDS = 0 Vdc)

GS

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

(V

= VGS, ID = 250 mAdc)

DS

(Note 3)

Threshold Temperature Coefficient (Negative)

Static Drain−to−Source On−Resistance (Note 3)

(V

= 10 Vdc, ID = 1.5 Adc)

GS

Static Drain−to−Source On−Resistance (Note 3)

(V

= 10 Vdc, ID = 3.0 Adc)

GS

= 10 Vdc, ID = 1.5 Adc, TJ = 150°C)

(V

GS

Forward Transconductance (Note 3)

(V

= 8.0 Vdc, ID = 1.7 Adc)

DS

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance C

(VDS = 25 Vdc, V

f = 1.0 MHz)

GS

= 0 V,

Transfer Capacitance C

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

(V

Rise Time t

Turn−Off Delay Time t

= 30 Vdc, ID = 3.0 Adc,

DD

V

= 10 Vdc,

GS

= 9.1 W) (Note 3)

R

G

Fall Time t

Gate Charge

(VDS = 48 Vdc, ID = 3.0 Adc,

V

= 10 Vdc) (Note 3)

GS

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (IS = 3.0 Adc, VGS = 0 Vdc)

Reverse Recovery Time

Reverse Recovery Stored Charge Q

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

4. Switching characteristics are independent of operating junction temperatures.

(I

= 3.0 Adc, VGS = 0 Vdc,

S

TJ = 150°C) (Note 3)

(IS = 3.0 Adc, VGS = 0 Vdc,

/dt = 100 A/ms) (Note 3)

dI

S

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

V

DS(on)

g

C

t

d(on)

d(off)

Q

Q

Q

V

t

t

t

fs

iss

oss

rss

r

f

SD

rr

a

b

RR

60

−

−

−

68
66

−

−

−

−

1.0
10

− − ± 100 nAdc

2.0

−

3.0

6.6

4.0

−

− 88 110

− 0.27

0.24

0.40

−

− 3.2 − Mhos

− 324 455

− 35 50

− 110 155

− 9.4 20

− 14 30

− 21 45

− 13 30

T

1

2

− 10.6 22

− 1.9 −

− 4.2 −

−

−

0.89

0.74

1.0

−

− 30 −

− 22 −

− 8.6 −

− 0.04 −

Vdc

mV/°C

mAdc

Vdc

mV/°C

mW

Vdc

pF

ns

nC

Vdc

ns

mC

http://onsemi.com

2

NTF3055−100

6

5

VGS = 10 V

4

3

VGS = 8 V

2

DRAIN CURRENT (AMPS)

D,

1

I

0

0

V

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS,

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.16
VGS = 10 V

0.14

0.12

0.1

0.08

0.06

VGS = 6 V

TJ = 100°C

TJ = 25°C

TJ = −55°C

VGS = 5 V

VGS = 4.5 V

VGS = 4 V

3

6

V

5

4

3

2

DRAIN CURRENT (AMPS)

D,

I

421

0.16

TJ = 100°C

1

0

363.5 54 4.5 5.5

VGS = 15 V

0.14

0.12

0.1

0.08

0.06

≥ 10 V

DS

TJ = 25°C

TJ = −55°C

V

GATE−TO−SOURCE VOLTAGE (VOLTS)

GS,

TJ = 100°C

TJ = 25°C

TJ = −55°C

0.04

0.02

DRAIN−TO−SOURCE RESISTANCE (W)

0

DS(on),

R

0

13 6

DRAIN CURRENT (AMPS)

I

D,

Figure 3. On−Resistance versus

Gate−to−Source Voltage

2.2
ID = 1.5 A

2

V

= 10 V

GS

1.8

1.6

1.4

1.2

1

0.8

0.6

−50 50250−25 75 125100

DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

DS(on),

R

T

, JUNCTION TEMPERATURE (°C)

J

Figure 5. On−Resistance Variation with

Temperature

0.04

0.02

DRAIN−TO−SOURCE RESISTANCE (W)

0

42

52

DS(on),

R

0

1

4653

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

1000

VGS = 0 V

100

TJ = 150°C

TJ = 125°C

, LEAKAGE (nA)

150

175

DSS

I

10

1

04060302010 50

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

V

DS,

TJ = 100°C

Figure 6. Drain−to−Source Leakage Current

versus Voltage

http://onsemi.com

3

NTF3055−100

800

700

VDS = 0 V

C

iss

VGS = 0 V

TJ = 25°C

12

10

600

500

400

300

200

C, CAPACITANCE (pF)

100

C

rss

C

rss

C

iss

C

oss

8

6

Q

1

Q

2

4

2

, GATE−TO−SOURCE VOLTAGE (VOLTS)

0

0

10 10 155020525

V

V

GS

DS

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE

GS

V

0108412

Q

, TOTAL GATE CHARGE (nC)

g

(VOLTS)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage versus Total Charge

100

VDS = 30 V
I

= 3 A

D

= 10 V

V

GS

t

d(off)

t

f

t

r

3

2

VGS = 0 V
T

= 25°C

J

Q

T

V

GS

ID = 3 A
T

= 25°C

J

62

10

t, TIME (ns)

1

1 10 100 0.54 0.660.620.58 0.78

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

t

d(on)

1

, SOURCE CURRENT (AMPS)

S

I

0

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage versus Current

versus Gate Resistance

100

VGS = 20 V
SINGLE PULSE
TC = 25°C

10

1

1 ms

10 ms

0.1

, DRAIN CURRENT (AMPS)

D

I

0.01

0.1 10 1001 25 125 15010075 17550

THERMAL LIMIT
PACKAGE LIMIT

R

DS(on)

LIMIT

100 ms

dc

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

80

70

60

50

40

30

20

AVALANCHE ENERGY (mJ)

10

, SINGLE PULSE DRAIN−TO−SOURCE

AS

0

E

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

0.7 0.74

0.82 0.86

ID = 7 A

0.9

http://onsemi.com

4

10

1 x 1 inch 1 oz. Cu Pad (3 x 3 inch FR4)

1

0.1

RESISTANCE (NORMALIZED)

0.01

r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE

0.001

Figure 13. Thermal Response

NTF3055−100

0.010.00010.00001

t, TIME (s)

1001010.10.001 1000

http://onsemi.com

5

b1

NTF3055−100

PACKAGE DIMENSIONS

SOT−223 (TO−261)

CASE 318E−04

D

ISSUE L

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

0.08 (0003)

H

e1

E

A1

4

123

e

E

b

q

A

C

DIMAMIN NOM MAX MIN

A1 0.02 0.06 0.10 0.001

b 0.60 0.75 0.89 0.024

b1 2.90 3.06 3.20 0.115

c 0.24 0.29 0.35 0.009
D 6.30 6.50 6.70 0.249
E 3.30 3.50 3.70 0.130

e 2.20 2.30 2.40 0.087
e1
L1 1.50 1.75 2.00 0.060
H

E

q

STYLE 3:

PIN 1. GATE

L1

MILLIMETERS

1.50 1.63 1.75 0.060

0.85 0.94 1.05 0.033

6.70 7.00 7.30 0.264
0° 10° 0° 10°

− −

2. DRAIN

3. SOURCE

4. DRAIN

INCHES

NOM MAX

0.064 0.068

0.002 0.004

0.030 0.035

0.121 0.126

0.012 0.014

0.256 0.263

0.138 0.145

0.091 0.094

0.037 0.041

0.069 0.078

0.276 0.287

SOLDERING FOOTPRINT*

3.8

0.15

2.0

0.079

2.3

0.091

2.3

0.091

6.3

0.248

2.0

0.079

1.5

0.059

SCALE 6:1

ǒ

inches

mm

Ǔ

*For additional information on our Pb−Free strategy and

soldering details, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual,
SOLDERRM/D.

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NTF3055−100/D

6