BDW42 - NPN, BDW46,
BDW47 - PNP
BDW42 and BDW47 are Preferred Devices
Darlington Complementary
Silicon Power Transistors
This series of plastic, medium-power silicon NPN and PNP
Darlington transistors are designed for general purpose and low speed
switching applications.
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Features
•High DC Current Gain - h
= 2500 (typ) @ IC = 5.0 Adc.
FE
•Collector Emitter Sustaining Voltage @ 30 mAdc:
V
CEO(sus)
100 Vdc (min) - BDW42/BDW47
= 80 Vdc (min) - BDW46
•Low Collector Emitter Saturation Voltage
V
3.0 Vdc (max) @ IC = 10.0 Adc
= 2.0 Vdc (max) @ IC = 5.0 Adc
CE(sat)
•Monolithic Construction with Built-In Base Emitter Shunt resistors
•TO-220AB Compact Package
•Pb-Free Packages Are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector‐Emitter Voltage
BDW46
BDW42, BDW47
Collector‐Base Voltage
BDW46
BDW42, BDW47
Emitter‐Base Voltage V
Collector Current I
Base Current I
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction-to-Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
V
CEO
V
P
TJ, T
R
CB
EB
C
B
D
-55 to +150 °C
stg
q
JC
80
100
80
100
5.0 Vdc
15 Adc
0.5 Adc
85
0.68
1.47 °C/W
Vdc
Vdc
W
W/°C
15 AMP DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
80-100 VOLT, 85 WATT
MARKING
DIAGRAM
4
TO-220AB
CASE 221A-09
STYLE 1
1
2
3
BDWxx = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
x = 42, 46, or 47
ORDERING INFORMATION
Device Package Shipping
BDW42 TO-220AB 50 Units/Rail
BDW42G TO-220AB
BDW46 TO-220AB 50 Units/Rail
BDW46G TO-220AB
BDW47
BDW47G 50 Units/Rail
(Pb-Free)
(Pb-Free)
TO-220AB
(Pb-Free)
BDWxx
AYWWG
50 Units/Rail
50 Units/Rail
50 Units/RailTO-220AB
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 13
Preferred devices are ON Semiconductor recommended
choices for future use and best overall value
Publication Order Number:
BDW42/D
BDW42 - NPN, BDW46, BDW47 - PNP
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0) BDW46
BDW42/BDW47
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0) BDW46
(VCE = 50 Vdc, IB = 0) BDW42/BDW47
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0) BDW46
(VCB = 100 Vdc, IE = 0) BDW42/BDW47
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
Collector-Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 10 mAdc)
(IC = 10 Adc, IB = 50 mAdc)
Base-Emitter On Voltage
(IC = 10 Adc, VCE = 4.0 Vdc)
SECOND BREAKDOWN (Note 2)
Second Breakdown Collector
Current with Base Forward Biased
BDW42 VCE = 28.4 Vdc
VCE = 40 Vdc
BDW46/BDW47 VCE = 22.5 Vdc
VCE = 36 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of common emitter small signal short circuit current transfer ratio
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) BDW42
BDW46/BDW47
Small-Signal Current Gain
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
2. Pulse Test non repetitive: Pulse Width = 250 ms.
Symbol
V
CEO(sus)
I
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
I
S/b
f
T
C
ob
h
fe
Min
80
100
-
-
-
-
-
1000
250
-
-
-
3.0
1.2
3.8
1.2
4.0
-
-
300
Max
-
-
2.0
2.0
1.0
1.0
2.0
-
-
2.0
3.0
3.0
-
-
-
-
-
200
300
-
Unit
Vdc
mAdc
mAdc
mAdc
Vdc
Vdc
Adc
MHz
pF
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2
BDW42 - NPN, BDW46, BDW47 - PNP
90
80
70
60
50
40
30
20
, POWER DISSIPATION (WATTS)
D
P
10
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
R
V
2
APPROX
+ 8.0 V
0
V
1
APPROX
- 12 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
25 ms
B
D
51
1
[ 8.0 k [ 150
+ 4.0 V
for td and tr, D1 id disconnected
and V2 = 0
For NPN test circuit reverse all polarities
Figure 2. Switching Times Test Circuit
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.1
0.07
0.05
r(t) EFFECTIVE TRANSIENT
0.03
0.02
THERMAL RESISTANCE (NORMALIZED)
0.01
0.01
0.2
0.1
0.05
0.02
SINGLE PULSE
0.01
0.02
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500
0.03 0.3 3.0 30 300
V
CC
- 30 V
R
C
TUT
SCOPE
t, TIME OR PULSE WIDTH (ms)
5.0
3.0
2.0
1.0
0.7
0.5
t, TIME (s)μ
0.3
0.2
VCC = 30 V
IC/IB = 250
0.1
IB1 = I
0.07
TJ = 25°C
0.05
0.1
P
(pk)
DUTY CYCLE, D = t1/t
t
s
t
f
t
r
B2
0.2 0.3 0.7 3.0 10
td @ V
0.5 2.0 7.0
= 0 V
BE(off)
1.0 5.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
R
(t) = r(t) R
q
JC
R
q
JC
t
1
t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
2
= 1.92°C/W
- TC = P
q
(pk)
JC
1
R
(t)
q
JC
Figure 4. Thermal Response
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3
50
20
10
5.0
2.0
1.0
0.5
0.2
, COLLECTOR CURRENT (AMP)
C
I
0.1
0.05
TJ = 25°C
1.0
2.0 503.0 5.0 7.0
BDW42 - NPN, BDW46, BDW47 - PNP
ACTIVE-REGION SAFE OPERATING AREA
0.1 ms
1.0 ms
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITED
@ TC = 25°C (SINGLE PULSE)
10 20 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
dc
BDW42
30 70
0.5 ms
50
20
10
5.0
2.0
1.0
0.5
0.2
, COLLECTOR CURRENT (AMP)
C
I
0.1
0.05
1.0
TJ = 25°C
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITED
@ TC = 25°C (SINGLE PULSE)
BDW46
BDW47
2.0 503.0 5.0 7.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10 20 100
1.0 ms
dc
30 70
0.1 ms
0.5 ms
Figure 5. BDW42
There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC - VCE limits
of the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 5 and 6 is based on
T
= 200°C; TC is variable depending on conditions.
J(pk)
10,000
5000
3000
2000
1000
500
300
200
100
, SMALL-SIGNAL CURRENT GAIN
FE
h
50
30
20
10
1.0
2.0 5.0 10 20 50 100 200 1000
Figure 7. Small-Signal Current Gain
TJ = 25°C
VCE = 3.0 V
IC = 3.0 A
BDW46, 47 (PNP)
BDW42 (NPN)
500
f, FREQUENCY (kHz)
Figure 6. BDW46 and BDW47
Second breakdown pulse limits are valid for duty cycles to
10% provided T
v 200°C. T
J(pk)
may be calculated from
J(pk)
the data in Figure 4. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
*Linear extrapolation
300
TJ = + 25°C
200
100
70
C, CAPACITANCE (pF)
50
30
0.1
C
ib
BDW46, 47 (PNP)
BDW42 (NPN)
1.0 2.0 5.0 20 10010
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
C
ob
500.2 0.5
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4
BDW42 - NPN, BDW46, BDW47 - PNP
20,000
10,000
5000
3000
2000
1000
, DC CURRENT GAIN
FE
h
500
300
200
3.0
2.6
2.2
0.1
BDW42 (NPN)
TJ = 150°C
25°C
-55°C
0.2 0.3 0.5 0.7 1.0 2.0 10
IC, COLLECTOR CURRENT (AMP)
IC = 2.0 A
4.0 A 6.0 A
3.0 5.0
BDW46, 47 (PNP)
VCE = 3.0 V
7.0
20,000
10,000
7000
5000
3000
2000
1000
, DC CURRENT GAIN
FE
700
h
500
300
200
0.1
Figure 9. DC Current Gain
TJ = 25°C
3.0
2.6
2.2
VCE = 3.0 V
TJ = 150°C
25°C
-55°C
0.2 0.3 0.5 0.7 1.0 2.0 10
, COLLECTOR CURRENT (AMP)
I
C
IC = 2.0 A
4.0 A 6.0 A
3.0 5.0
TJ = 25°C
7.0
1.8
1.4
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
V
1.0
0.3 0.5 1.0 2.0 3.0 5.0 7.0 30
0.7 2010
IB, BASE CURRENT (mA)
1.8
1.4
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
V
1.0
0.3 0.5 1.0 2.0 3.0 5.0 7.0 30
0.7 2010
IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
V, VOLTAGE (VOLTS)
3.0
2.5
2.0
1.5
1.0
0.5
TJ = 25°C
VBE @ VCE = 4.0 V
V
@ IC/IB = 250
BE(sat)
V
CE(sat)
IC, COLLECTOR CURRENT (AMP)
@ IC/IB = 250
3.0
TJ = 25°C
2.5
2.0
V
@ IC/IB = 250
V, VOLTAGE (VOLTS)
1.5
1.0
0.5
BE(sat)
VBE @ VCE = 4.0 V
V
@ IC/IB = 250
CE(sat)
0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0
IC, COLLECTOR CURRENT (AMP)
Figure 11. “On” Voltages
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5
BDW42 - NPN, BDW46, BDW47 - PNP
5
5
BDW42 (NPN) BDW46, 47 (PNP)
+5.0
+4.0
*IC/IB v 250
+3.0
+2.0
25°C to 150°C
+1.0
0
-1.0
*qVC for V
CE(sat)
-2.0
-3.0
, TEMPERATURE COEFFICIENT (mV/ C)°θ
-4.0
V
-5.0
qVB for V
BE
0.1 0.2 0.3 1.0 2.0 3.0 5.0 7.0 10
0.5 0.7
-55°C to 25°C
25°C to 150°C
-55°C to 25°C
IC, COLLECTOR CURRENT (AMP)
Figure 12. Temperature Coefficients
10
REVERSE
4
10
VCE = 30 V
3
10
2
10
TJ = 150°C
1
10
, COLLECTOR CURRENT (A)μI
0
C
10
-1
10
100°C
25°C
FORWARD
-0.2 -0.40+0.2+0.4+0.6
-0.6 -0.8 -1.0 -1.2 -1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 13. Collector Cut-Off Region
+5.0
+4.0
+3.0
+2.0
*IC/IB v 250
+25°C to 150°C
+1.0
0
-1.0
*qVC for V
-2.0
qVB for V
-3.0
, TEMPERATURE COEFFICIENTS (mV/ C)°θ
-4.0
V
-5.0
0.1 0.2 0.3 1.0 2.0 3.0 5.0 10
CE(sat)
BE
+25°C to 150°C
-55°C to +25°C
-55°C to +25°C
0.5
IC, COLLECTOR CURRENT (AMP)
10
REVERSE FORWARD
4
10
VCE = 30 V
3
10
2
10
TJ = 150°C
1
10
, COLLECTOR CURRENT (A)μI
C
10
10
100°C
0
-1
25°C
+0.2 +0.40-0.2-0.4-0.6
+0.6 +0.8 +1.0 +1.2 + 1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
NPN
BDW42
COLLECTOR
PNP
BDW46
COLLECTOR
BDW47
BASE
[ 8.0 k [ 60
EMITTER
BASE
[ 8.0 k [ 60
EMITTER
Figure 14. Darlington Schematic
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6
BDW42 - NPN, BDW46, BDW47 - PNP
l
PACKAGE DIMENSIONS
TO-220
CASE 221A-09
ISSUE AE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
SEATING
-T-
PLANE
B
4
Q
123
F
T
A
U
C
S
H
K
Z
L
V
R
J
G
D
N
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.161 3.61 4.09
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.014 0.025 0.36 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04
MILLIMETERSINCHES
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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