ON Semiconductor BDC01DRL1 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol BDC01D Unit
Collector–Emitter Voltage V
CEO
100 Vdc
Collector–Base Voltage V
CBO
100 Vdc
Emitter–Base Voltage V
EBO
5.0 Vdc
Collector Current — Continuous I
C
0.5 Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
1.0
8.0
Watts
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
2.5
20
Watts
mW/°C
Operating and Storage Junction
T emperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
125 °C/W
Thermal Resistance, Junction to Case
R
q
JC
50 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Voltage
(IC = 10 mA, IB = 0)
V
(BR)CEO
100 — Vdc
Collector Cutoff Current
(VCB = 100 V , IE = 0)
I
CBO
— 0.1
m
Adc
Emitter Cutoff Current
(IC = 0, VEB = 5.0 V)
I
EBO
— 100 nAdc
Order this document
by BDC01D/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–05, STYLE 14
TO–92 (TO–226AE)
1
2
3
Motorola, Inc. 1996
COLLECTOR
2
3
BASE
1
EMITTER
BDC01D
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
(IC = 500 mA, VCE = 2.0 V)
h
FE
40
25
400
—
—
Collector–Emitter Saturation Voltage
(1)
(IC = 1000 mA, IB = 100 mA)
V
CE(sat)
— 0.7 Vdc
Collector–Emitter On Voltage
(1)
(IC = 1000 mA, VCE = 1.0 V)
V
BE(on)
— 1.2 Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 200 mA, VCE = 5.0 V, f = 20 MHz)
f
T
50 — MHz
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
C
ob
— 30 pF
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle 2.0%.
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
400
0.5 0.7 1.0 2.0 3.0 5.0 7.0
10 20 30 50 70 100 200
200
100
80
60
40
h
FE
, DC CURRENT GAIN
TJ = 125°C
25°C
–55°C
VCE = 1.0 V
300 500
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
V
CE
, COLLECTOR–EMITTER VOL TAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.1 101.0
TJ = 25°C
IC = 10 mA
0.05 0.2 0.5 2.0 5.0 20
100 mA 250 mA
50
mA
50
500 mA
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.5 1.0 20020
TJ = 25°C
V
BE(on)
@ VCE = 1.0 V
V
CE(sat)
@ IC/IB = 10
5.0 10 50 100
V
BE(sat)
@ IC/IB = 10
2.0 500
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