ON Semiconductor BD810, BD809 Datasheet
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ON Semiconductor
NPN
Plastic High Power Silicon
Transistor
. . . designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
• DC Current Gain —
hFE = 30 (Min) @ IC = 2.0 Adc
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Base Current
Total Device Dissipation TC = 25C
Derate above 25C
Operating and Storage Junction
ОООООООООО
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
TJ, T
stg
ÎÎÎ
Symbol
θ
JC
Value
5.0
6.0
720
–55 to +150
ÎÎÎ
80
80
10
90
Max
1.39
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
mW/C
C
ÎÎ
Unit
C/W
BD809
PNP
BD810
10 AMPERE
POWER TRANSISTORS
PNP SILICON
60, 80 VOL TS
90 WATTS
4
STYLE 1:
PIN 1. BASE
2. COLLECTOR
1
2
3
CASE 221A–09
3. EMITTER
4. COLLECTOR
TO–220AB
Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 1
1 Publication Order Number:
BD809/D
BD809 BD810
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ELECTRICAL CHARACTERISTICS (T
= 25C unless otherwise noted)
C
Characteristic
Collector–Emitter Sustaining Voltage*
ОООООООООООООООО
(IC = 0.1 Adc, IB = 0)
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
ОООООООООООООООО
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
DC Current Gain
ОООООООООООООООО
(IC = 2.0 A, VCE = 2.0 V)
(IC = 4.0 A, VCE = 2.0 V)
ОООООООООООООООО
Collector–Emitter Saturation Voltage*
(IC = 3.0 Adc, IB = 0.3 Adc)
ОООООООООООООООО
Base–Emitter On Voltage*
(IC = 4.0 Adc, VCE = 2.0 Vdc)
Current–Gain Bandwidth Product
ОООООООООООООООО
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
.5 ms
10
5 ms
3
1 ms
dc
1 ms
1
, COLLECTOR CURRENT (AMP)
0.3
C
I
0.1
1
3 10 30 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region DC Safe Operating Area
(see Note 1)
Symbol
BV
CEO
ÎÎÎÎ
I
CBO
ÎÎÎÎ
I
EBO
h
FE
ÎÎÎÎ
ÎÎÎÎ
V
CE(sat)
ÎÎÎÎ
V
BE(on)
f
T
ÎÎÎÎ
Min
ÎÎ
80
—
ÎÎ
—
ÎÎ
30
15
ÎÎ
—
ÎÎ
—
1.5
ÎÎ
Max
—
ÎÎÎ
—
1.0
ÎÎÎ
2.0
ÎÎÎ
—
—
ÎÎÎ
1.1
ÎÎÎ
1.6
—
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90
80
70
60
50
40
30
20
, POWER DISSIPATION (WATTS)
D
P
10
0
0 25 50 100 125 150 175
75
T
, CASE TEMPERATURE (°C)
C
Figure 2. Power–Temperature Derating Curve
Unit
Vdc
mAdc
mAdc
Vdc
Vdc
MHz
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2
BD809 BD810
NPN
BD809
500
T
= 150°C
J
200
100
, DC CURRENT GAIN
FE
h
50
20
10
5.0
25°C
-55°C
VCE = 2.0 V
0.50.2 101.0 2.0
IC, COLLECTOR CURRENT (AMP)
5.0 0.50.2 101.0 2.0 205.0
Figure 3. DC Current Gain
2.0
1.8
1.6
1.4
1.2
IC = 1.0 A
4.0 A 8.0 A
0
5.0 100 5000
10
20 50
IB, BASE CURRENT (mA)
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
V
1.0
0.8
0.6
0.4
0.2
T
Figure 4. Collector Saturation Region
PNP
BD810
500
T
200
100
50
, DC CURRENT GAIN
20
FE
h
10
20
= 25°C
J
20001000200 500 5000
5.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
V
0
5.0 100
25°C
-55°C
VCE = 2.0 V
IC = 1.0 A
10
= 150°C
J
IC, COLLECTOR CURRENT (AMP)
4.0 A 8.0 A
20 50 20001000200 500
IB, BASE CURRENT (mA)
T
= 25°C
J
2.8
T
2.4
2.0
1.6
1.2
V, VOLTAGE (VOLTS)
0.8
0.4
0
0.2 0.5 2.0 20101.0 5.0
= 25°C
J
V
= IC/IB = 10
BE(sat)
VBE @ VCE = 2.0 V
V
@ IC/IB = 10
CE(sat)
IC, COLLECTOR CURRENT (AMP)
2.8
2.4
2.0
1.6
1.2
V, VOLTAGE (VOLTS)
V
0.8
0.4
V
0
0.2 0.5 2.0 20101.0 5.0
Figure 5. “On” Voltages
http://onsemi.com
3
T
= 25°C
J
@ IC/IB = 10
BE(sat)
VBE @ VCE = 2.0 V
@ IC/IB = 10
CE(sat)
IC, COLLECTOR CURRENT (AMP)
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