ON Semiconductor BD676, BD676A, BD678, BD678A, BD680 Service Manual

BD676, BD676A, BD678,
BD678A, BD680, BD680A,
BD682, BD682T

Plastic Medium-Power
Silicon PNP Darlingtons

This series of plastic, medium−power silicon PNP Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.

Features

• High DC Current Gain −

= 750 (Min) @ IC = 1.5 and 2.0 Adc

h

FE

• Monolithic Construction

• BD676, 676A, 678, 678A, 680, 680A, 682 are complementary

with BD675, 675A, 677, 677A, 679, 679A, 681

• BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703

• Pb−Free Package are Available*

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4.0 AMP DARLINGTON

POWER TRANSISTORS

PNP SILICON

45, 60, 80, 100 VOLT, 40 WATT

COLLECTOR 2

BASE

3

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage V

Collector Current I

Base Current I

Total Device Dissipation

@ T

= 25°C

C

Derate above 25°C

Operating and Storage Junction

Temperature Range

BD676, BD676A
BD678, BD678A
BD680, BD680A

BD682

BD676, BD676A
BD678, BD678A
BD680, BD680A

BD682

V

CEO

V

P

TJ, T

CB

EB

C

B

D

−55 to +150 °C

stg

45
60
80

100

45
60
80

100

5.0 Vdc

4.0 Adc

0.1 Adc

40

0.32

Vdc

Vdc

W/°C

W

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Case

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

R

q

JC

3.13 °C/W

EMITTER 1

TO−225AA

CASE 77
STYLE 1

3

2

1

MARKING DIAGRAMS

YWW
BD6xxG

BD6xx = Device Code

xx = 76, 76A, 78, 78A,

80, 80A, 82, or 82T
Y = Year
WW = Work Week
G=Pb−Free Package

YWW
B
BD6xxG

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2008

September, 2008 − Rev. 13

Publication Order Number:

BD676/D

BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1) BD676, 676A

(I

= 50 mAdc, IB = 0) BD678, 678A

C

BD680, 680A
BD682

Collector Cutoff Current (VCE = Half Rated V

CEO

, IB = 0)

Collector Cutoff Current

(V

= Rated BV

CB

= Rated BV

(V

CB

, IE = 0)

CEO

. IE = 0, TC = 100°C)

CEO

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain (Note 1)

(I

= 1.5 Adc, VCE = 3.0 Vdc) BD676, 678, 680, 682

C

= 2.0 Adc, VCE = 3.0 Vdc) BD676A, 678A, 680A

(I

C

Collector−Emitter Saturation Voltage (Note 1)

(I

= 1.5 Adc, IB = 30 mAdc) BD678, 680, 682

C

= 2.0 Adc, IB = 40 mAdc) BD676A, 678A, 680A

(I

C

Base−Emitter On Voltage (Note 1)

(I

= 1.5 Adc, VCE = 3.0 Vdc) BD678, 680, 682

C

= 2.0 Adc, VCE = 3.0 Vdc) BD676A, 678A, 680A

(I

C

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Symbol

BV

CEO

I

CEO

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(on)

h

fe

Min

45
60
80

100

−

−

−

−

750

750

−

−

−

−

1.0

Max

−

−

−

−

500

0.2

2.0

2.0

−

−

2.5

2.8

2.5

2.5

−

Unit

Vdc

mAdc

mAdc

mAdc

−

−

Vdc

Vdc

−

50

45

40

35

30

25

20

15

, POWER DISSIPATION (WATTS)

10

D

P

5.0

0

15 30 45 60 75 105 135 150 165

12090

TC, CASE TEMPERATURE (°C)

Figure 1. Power Temperature Derating

There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate I

C

− V

CE

limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.

5.0

2.0

1.0

BONDING WIRE LIMIT

0.5

THERMAL LIMIT at T

= 25°C

C

SECONDARY BREAKDOWN LIMIT

0.2

, COLLECTOR CURRENT (AMP)

C

I

0.1

0.05

1.0

TC = 25°C

2.0 5.0 10 50 100
V

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

BD676, 676A
BD678, 678A
BD680, 680A

BD682

20

Figure 2. DC Safe Operating Area

At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.

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2