ON Semiconductor BD675, BD675A, BD677, BD677A, BD679 Service Manual

BD675, BD675A, BD677,
BD677A, BD679, BD679A,
BD681

BD681 is a Preferred Device

Plastic Medium-Power
Silicon NPN Darlingtons

This series of plastic, medium−power silicon NPN Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.

Features

• High DC Current Gain:

= 750 (Min) @ I

h

FE

= 1.5 and 2.0 Adc

• Monolithic Construction

• BD675, 675A, 677, 677A, 679, 679A, 681 are complementary

with BD676, 676A, 678, 678A, 680, 680A, 682

• BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803

• Pb−Free Packages are Available*

C

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4.0 AMPERES

POWER TRANSISTORS

NPN SILICON

60, 80, 100 VOLTS, 40 WATTS

COLLECTOR 2

BASE

3

EMITTER 1

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage BD675, A

BD677, A
BD679, A
BD681

Collector−Base Voltage BD675, A

BD677, A
BD679, A
BD681

Emitter−Base Voltage

Collector Current

Base Current

Total Device Dissipation @ TC = 25°C
Derate above 25°C

Operating and Storage Junction
Temperature Range

Symbol

V

CEO

V

CBO

V

EBO

I

C

I

B

P

D

TJ, T

stg

Value

45
60
80

100

45
60
80

100

5.0

4.0

1.0

40

0.32

– 55 to + 150

Unit

Vdc

Vdc

Vdc

Adc

Adc

W

W/°C

°C

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance,

Junction−to−Case

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

Symbol

q

JC

Max

3.13

Unit

°C/W

TO−225AA

CASE 77
STYLE 1

3

2

1

MARKING DIAGRAMS

YWW
BD6xxG

BD6xx = Device Code

x = 75, 77, 79, 81
Y = Year
WW = Work Week
G=Pb−Free Package

YWW
B
BD6xxAG

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2008

September, 2008 − Rev. 13

1 Publication Order Number:

Preferred devices are recommended choices for future use

and best overall value.

BD675/D

BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage, (Note 1) BD675, 675A

(I

= 50 mAdc, IB = 0) BD677, 677A

C

BD679, 679A
BD681

Collector Cutoff Current (VCE = Half Rated V

CEO

, IB = 0)

Collector Cutoff Current

(V

= Rated BV

CB

= Rated BV

(V

CB

, IE = 0)

CEO

, IE = 0, TC = 100’C)

CEO

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Currert Gain, (Note 1)

(I

= 1.5 Adc,VCE = 3.0 Vdc) BD675, 677, 679, 681

C

= 2.0 Adc, VCE = 3.0 Vdc) BD675A, 677A, 679A

(I

C

Collector−Emitter Saturation Voltage, (Note 1)

(I

= 1.5 Adc, IB = 30 mAdc) BD677, 679, 681

C

= 2.0 Adc, IB = 40 mAdc) BD675A, 677A, 679A

(I

C

Base−Emitter On Voltage, (Note 1)

(I

= 1.5 Adc, VCE = 3.0 Vdc) BD677, 679, 681

C

= 2.0 Adc, VCE = 3 0 Vdc) BD675A, 677A, 679A

(I

C

DYNAMIC CHARACTERISTICS

Small Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Symbol

BV

CEO

I

CEO

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(on)

h

fe

Min

45
60
80

100

−

−

−

—

750
750

−

−

−

−

1.0

Max

−

−

−

−

500

0.2

2.0

2.0

−

−

2.5

2.8

2.5

2.5

−

Unit

Vdc

mAdc

mAdc

mAdc

−

Vdc

Vdc

−

50

45

40

35

30

25

20

15

, POWER DISSIPATION (WATTS)

10

D

P

5.0

0

15 30 45 60 75 105 135 150 165

12090

TC, CASE TEMPERATURE (°C)

Figure 1. Power Temperature Derating

There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate I

C

− V

CE

limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.

5.0

2.0

1.0

BONDING WIRE LIMIT

0.5

THERMALLY LIMIT at T

= 25°C

C

SECONDARY BREAKDOWN LIMIT

0.2

, COLLECTOR CURRENT (AMP)

C

I

0.1

0.05

1.0

TC = 25°C

2.0 5.0 10 50 100
V

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

BD675, 675A
BD677, 677A
BD679, 679A

BD681

20

Figure 2. DC Safe Operating Area

At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.

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