ON Semiconductor BD159 Datasheet
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SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD159/D
. . . designed for power output stages for television, radio, phonograph and other
consumer product applications.
• Suitable for Transformerless, Line–Operated Equipment
• Thermopad{ Construction Provides High Power Dissipation Rating for High
Reliability
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
ООООООООООО
Peak
Base Current
Total Device Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction
ООООООООООО
T emperature Range
Symbol
V
CEO
V
CB
V
EB
I
C
ÎÎ
I
B
P
D
TJ, T
stg
ÎÎ
Max
350
375
5.0
0.5
1.0
ÎÎÎÎ
0.25
20
0.16
–65 to +150
ÎÎÎÎ
Unit
Vdc
Vdc
Vdc
Adc
Î
Adc
Watts
W/_C
_
C
Î
0.5 AMPERE
POWER TRANSISTOR
NPN SILICON
350 VOL TS
20 WATTS
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (T
ОООООООООООООООООООООООООООООООО
ООООООООООООООООО
Characteristic
Symbol
θ
JC
= 25_C unless otherwise noted)
C
Max
6.25
Unit
_
C/W
Symbol
ÎÎÎ
Min
ÎÎÎ
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
ООООООООООООООООО
(IC = 1.0 mAdc, IB = 0)
Collector Cutoff Current
(At rated voltage)
ООООООООООООООООО
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
ООООООООООООООООО
BV
CEO
ÎÎÎ
I
CBO
ÎÎÎ
I
EBO
ÎÎÎ
350
ÎÎÎ
—
ÎÎÎ
ÎÎΗÎÎÎ
ON CHARACTERISTICS
DC Current Gain
ООООООООООООООООО
(IC = 50 mAdc, VCE = 10 Vdc)
h
FE
ÎÎÎ
30
ÎÎÎ
CASE 77–09
TO–225AA TYPE
Max
ÎÎÎ
—
ÎÎÎ
100
ÎÎÎ
100
240
ÎÎÎ
Unit
ÎÎ
Vdc
ÎÎ
µAdc
ÎÎ
µAdc
ÎÎ
—
ÎÎ
Motorola, Inc. 1998
Motorola Bipolar Power Transistor Device Data
1
BD159
25
20
15
10
, POWER DISSIPATION (WATTS)
D
P
5.0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power–T emperature Derating Curve
1.0
0.7
1.0 ms
°
500 µs
C
0.5
0.3
0.2
0.1
0.07
0.05
0.03
, COLLECTOR CURRENT (AMPS)
C
I
0.02
0.01
10
TJ = 150°C
BONDING WIRE LIMITED
THERMALL Y LIMITED @ TC = 25
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
20 30 50 100 300200
VCE, COLLECTOR–EMITTER VOL TAGE (VOLTS)
dc
10 µs
1.0
VBE @ IC/IB = 10
VBE @ VCE = 10 V
TJ = +25°C
IC/IB = 5.0
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
0.8
0.6
0.4
0.2
V
@ IC/IB = 10
CE(sat)
0
10
20 30 50 100 200 300 500
Figure 2. “On” Voltages
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To
insure operation below, the maximum TJ, power–temperature derating must be observed for both steady state and
pulse power conditions.
Figure 3. DC Safe Operating Area
300
200
TJ = 150°C
100
70
50
, DC CURRENT GAIN
30
FE
h
20
10
1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500
– 55°C
+ 100°C
+ 25°C
7.0 70
IC, COLLECTOR CURRENT (mAdc)
VCE = 10 V
VCE = 2.0 V
Figure 4. Current Gain
2
Motorola Bipolar Power Transistor Device Data
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